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1.
铁电薄膜与底电极之间由于高温扩散而形成了界面层,且观察到其对薄膜电性能的影响类似于硅衬底上铁电薄膜的异质结效应。基于能带理论的考虑,建立物理模型来解释其影响。该界面异质结模型不仅可以解释铁电薄膜的界面分层、电滞回线不对称等现象,而且还成功地解释了电滞回线中心在极化轴上的偏移和疲劳循环过程中的偏移增加,并探讨了这种偏移对铁电薄膜疲劳特性的影响。  相似文献   

2.
铁电薄膜与底电极之间界面的异质结效应   总被引:1,自引:0,他引:1  
铁电薄膜与底电极之间由于高温扩散而形成了界面层,且观察到其对薄膜电性能的影响类似于硅衬底上铁电薄膜的异质结效应。基于能带理论的考虑,建立物理模型来解释其影响。该界面异质结膜型不仅可以解释铁电薄膜的界面分层、电滞回线不对称等现象,而且还成功地解释了电滞回线中心在极化轴上的偏移和疲劳循环过程中的偏移增加,并探讨了这种偏移对铁电薄膜疲劳特性的影响。  相似文献   

3.
相对于聚合物等储能介质材料,介电陶瓷具有温度稳定性好和循环寿命长的优点,是制备脉冲功率储能电容器的优秀候选材料。但目前介电陶瓷的储能密度相对较低,不能满足脉冲功率设备小型化的要求。因此,如何显著提高介电陶瓷的储能密度成为近年来功能陶瓷研究的热点之一。本文首先介绍了介电储能电容器对陶瓷材料性能的要求,然后结合本课题组的研究工作,评述了BaTiO3基、BiFeO3基、(K0.5Na0.5)NbO3基无铅弛豫铁电陶瓷和(Bi0.5Na0.5)TiO3基、AgNbO3基无铅反铁电陶瓷储能特性的研究现状,重点阐述了不同材料体系的组分设计思路及相关储能特性,分析了无铅非线性介电储能陶瓷所面临的机遇和挑战,指出了应对策略。最后,展望了下一步的研究方向和内容。  相似文献   

4.
钛酸钡(简称BT)具有优良的铁电、压电、耐压和绝缘性能,广泛应用于多层陶瓷电容器、温度补偿元件、光电器件等。综述了钛酸钡陶瓷制备方法及晶粒尺寸、组成对其介电性能的影响,并提出了研究中需要解决的一些问题。  相似文献   

5.
以粉煤灰泡沫陶瓷作为增强相,以铝硅合金作为基体材料,采用挤压铸造工艺制备出粉煤灰泡沫陶瓷铝硅合金复合材料。研究了相同浇注温度不同基体材料以及同种基体材料不同浇注温度因素下复合材料界面结合的情况。结果表明,以亚共晶铝硅合金(ZL101)、共晶铝硅合金(ZL102)和过共晶铝硅合金(Al-23Si)作为基体材料均能制备出界面结合良好的复合材料,并且界面之间形成了一组织紧密的硅相过渡带;粉煤灰泡沫陶瓷铝硅合金复合材料的界面结合机构是机械联锁结合、存在扩散层和界面反应的混合机构;铝硅合金与粉煤灰泡沫陶瓷的界面结合能力随着温度的升高而提高,在温度低于780℃的情况下,界面易出现分离现象,780~810℃为较佳浇注温度。  相似文献   

6.
玻璃陶瓷电容器内电极结构及界面形貌对电性能有重要影响.采用磁控溅射法在介质层与银浆料电极间分别制备了Pt、Au、Cu和Ag金属膜内电极层,研究此电极层对Na2O-PbO-Nb2O5-SiO2玻璃陶瓷电容器电性能的影响.与单层浆料的电极结构相比,引入Pt、Au金属膜可以更有效地改善电性能:等效电容值增加25%,漏电流降低一个数量级.由SEM结果可知:Pt、Au、Cu膜与玻璃陶瓷紧密的界面接触能够抑制银向介质中扩散;然而,采用单层银浆料或引入Ag金属膜的样品界面多孔且银扩散严重.以上分析表明:Pt、Au金属膜电极层能够改善玻璃陶瓷电容器界面微观结构,有效抑制银的扩散,提高整体电性能.  相似文献   

7.
铁电陶瓷/铁氧体叠层共烧体的介电特性   总被引:3,自引:0,他引:3  
采用电介质物理学等效电路分析方法研究了Pb(Ni1/3Nb2/3)O3基铁电陶瓷与NiZnCu铁氧体叠层共烧体的介电频率响应,探讨了共烧体界面对介电性能的影响.结果表明,叠层共烧体的介电常数随频率的增加而减小,介电损耗随着频率的增加先增大后减小,有明显的损耗峰出现;界面扩散层对叠层共烧体电学响应有影响,叠层共烧体等效电路可视为介电材料层、铁氧体材料层和界面扩散层C re-R re等效电路的串联,并且界面扩散层会对叠层共烧体低频部分的介电响应起作用.  相似文献   

8.
李龙土 《功能材料》2004,35(Z1):21-23
本文主要介绍几种典型的铁电、压电陶瓷及其多层片式元件应用研究的若干新进展.基于过渡液相烧结机制的压电陶瓷材料具有烧结温度低、压电常数和介电常数高,介质损耗低等诸多优点.低烧多层压电变压器(MPT)以其低驱动电压、小体积、高升压比、薄型片式化等优点在液晶显示背光电源等方面获得应用.多层压电变压器及其背光电源具有高功率密度、高转换效率、薄型化和低成本等特点,通过有限元分析和多普勒激光扫描测振仪对MPT的振动模态与机电谐振特性等进行了分析与测定,为结构与性能优化提供了理论与实验依据.研究了钛酸钡基高介电常数温度稳定型多层陶瓷电容器(MLCC)及薄层贱金属内电极MLCC的关键材料组成以及制备技术,基于缺陷化学原理和无晶粒长大的致密化烧结动力学,通过调控受、施主掺杂和两段法烧结工艺,制备了在还原气氛烧结亚微米/纳米晶钛酸钡基陶瓷及其细晶化贱金属内电极MLCC.研究了多层复合功能陶瓷共烧行为、异质界面互扩散、致密化速率调控机制及共烧匹配技术,借助于差热膨胀仪研究了铁电陶瓷介质和内电极共烧失配的动力学根源,为制备高可靠的MLCC等多层元器件提供实验与理论依据.介绍了压电陶瓷超声微马达的结构与特性.  相似文献   

9.
王雨  李龙土 《功能材料》1999,30(1):51-53,62
对比研究了典型铅系钙钛矿型弛豫铁电陶瓷独石电容器及钛酸钡基独石电容器的介电特性随温度、电场等条件下的变化规律。结果表明,尽管在弱电场下弛豫体陶瓷与钛酸钡陶瓷的介电行为存在较大的差别,但在强电场下这种差别会减小。从应用的角度看,两种电容器的介电性能在强电场下的相似性是弛豫体电容器取代传统钛酸钡电容器进入大规模应用的重要保证。同时,弛豫铁电陶瓷具有较高的介电常数,这一优势可为电容器设计中提高元件综合性  相似文献   

10.
功能陶瓷材料研究的若干进展   总被引:2,自引:0,他引:2  
本文介绍了几种典型铁电、压电陶瓷及其多层片式元件应用研究的若干新进展。基于过渡液相烧结机制的压电陶瓷材料具有烧结温度低、压电常数和介电常数高,介质损耗低等诸多优点。低烧多层压电变压器(MPT)以其低驱动电压、小体积、高升压比、薄型片式化等优点在液晶显示背光电源等方面获得应用。多层压电变压器及其背光电源具有高功率密度、高转换效率、薄型化和低成本等特点,通过有限元分析和多普勒激光扫描测振仪对MPT的振动模态与机电谐振特性等进行了分析与测定,为结构与性能优化提供了理论与实验依据。研究了钛酸钡基高介电常数温度稳定型多层陶瓷电容器(MLCC)及薄层贱金属内电极MLCC的关键材料组成以及制备技术,基于缺陷化学原理和无晶粒长大的致密化烧结动力学,通过调控受、施主掺杂和两段法烧结工艺,制备了在还原气氛烧结亚微米/纳米晶钛酸钡基陶瓷及其细晶化贱金属内电极MLCC。研究了多层复合功能陶瓷共烧行为、异质界面互扩散、致密化速率调控机制及共烧匹配技术,借助于差热膨胀仪研究了铁电陶瓷介质和内电极共烧失配的动力学根源,为制备高可靠的MLCC等多层元器件提供实验与理论依据。介绍了压电陶瓷超声微马达的结构与特性。  相似文献   

11.
The effects of silver doping on PMN-PZN-PT relaxor ferroelectric ceramics were investigated in order to demonstrate the roles of the inner electrodes in the cofiring of MLCCs, because silver could diffuse from an electrode layer into a dielectric layer. Even if the addition of silver promoted the sintering of ceramics, the insulation resistance and the dielectric properties were changed to a certain extent so that they had a great influence on the reliability of MLCCs. Defect chemistry principles were used to analyze the mechanism of action of silver doping. The relationship of silver migration and microstructural formation was also discussed  相似文献   

12.
The size effect of BaTiO3 (BTO) is the most important issue to design multilayer ceramic capacitors (MLCCs) with high capacitance. In the size effect of BTO particles, the size dependence of dielectric permittivity related with the complex structure in BTO nano-particles. The grain size dependence of dielectric permittivity in BTO ceramics was due to the domain wall contribution. The core-shell structure played an important role in the size effect of dielectric layers in X7R-MLCCs. Computer simulation technique was developed to predict the limit of capacitance density of MLCCs produced by the current technology. Dielectric properties of MLCCs with different particle size of BTO were measured, and the data were analyzed using B-SPLINE fitting to predict dielectric permittivity at arbitrary temperatures and AC-fields. The dielectric properties of barium titanate grains smaller than 100 nm were predicted using least squares fitting of the B-SPLINE coefficients. It was found from the simulation that the use of barium titanate grains smaller than 80 nm did not give an advantage to increase the capacitance density as well as temperature stability of the MLCCs. The maximum capacitance was predicted for the 1608 (mm) chip size.  相似文献   

13.
The applications of ceramics are limited by their brittleness. Though the toughness of ceramics can be improved by adding hard and strong toughening agents, their damage tolerance is still poor. Novel concept derives from fish scale is explored and used to design alternative toughening agent. The microstructure of fish scale exhibits hierarchical complexity and many weak layers are present. As fish scales are used directly as the toughening agent, the toughness of ceramics can be enhanced. Furthermore, a new toughening mechanism involving crack deflection within fish scale is observed. Based on such observation, the toughening agents with internal weak interfaces are recommended as the toughening agent. Many ceramic/metal interfaces are present within the multilayer ceramic capacitors (MLCCs). The addition of MLCCs into brittle glass improves its crack resistance considerably.  相似文献   

14.
Comparative experiments were conducted to reveal the removal behaviors of three kinds of silicon carbide (SiC) ceramics during polishing and the effects of ceramic microstructure on the surface quality were also reported. Experimental results show that the second phase in SiC ceramics plays an important role in the surface quality when its size is large enough. The surface quality is enslaved to the formation of steps at interfaces between second phase and SiC matrix that results from different elastic modulus and hardness between two phases. Under 3 μm abrasive grains polishing condition, different SiC ceramics show different removal mechanisms. With decreasing abrasive grain size, all of different SiC ceramics exhibit a ductile removal mode, which decreases surface roughness effiently.  相似文献   

15.
对三元系统BaTiO3-Nb2O5-Ni2O3的微结构和介电性能进行了研究.XRD分析表明Nb2O5/Ni2O3协同掺杂的BaTiO3陶瓷为赝立方相结构;在掺杂1.0mol%Ni的BaTiO3中,Nb的固溶度〈4.0mol%.SEM观察表明,随Nb掺杂量的增加,BaTiO3陶瓷的晶粒尺寸先增大后减小.BaTiO3陶瓷的室温介电常数、介质损耗,以及在低温端和高温端的电容变化率都随Nb含量的增加而先增大后减小.DSC测量表明,Nb掺杂使BaTiO3陶瓷的居里温度向高温方向移动.该系统瓷料介电性质的变化与材料的晶粒尺寸以及掺杂剂导致的相变温度的移动密切相关.本实验在BaTiO3-Nb2O5-Ni2O3系统中开发出了新型的X8R材料,这种材料很有希望用于制备大容量X8R多层陶瓷电容器.  相似文献   

16.
Al2O3添加剂对合成MgTiO3陶瓷相组成及介电性能的影响   总被引:6,自引:0,他引:6  
研究了添加剂Al2O3对MgO和TiO2合成MgTiO3陶瓷烧结性,物相组成和微波介电性能的影响。XRD分析结果表明,没有添加Al2O3是,合成的MgTiO3陶瓷中只含有MgTiO3和MgTi5相,加入Al2O3,MgTiO3陶瓷中除了MgTiO3和MgTi2O5相外,还出现了MgAl2O4相,这是上由于Al2O3和MgO发生固相反应,MgAl2O4的出现虽然阻碍材料的致密化并导致密度下降,但是可能降低反应烧结合成MgTiO3陶瓷的相对介电常数和介电损耗。  相似文献   

17.
Several relaxor-based complex perovskite ferroelectric ceramics were synthesized by conventional solid-state reaction method via different routes, i.e., the B-site oxide mixing route, the straight calcination method and the columbite/wolframite precursor method. Structure analysis and physical properties measurements prove that the B-site oxide mixing route is efficient and feasible in the synthesizing of complex perovskite ferroelectrics since such a technique is superior in suppressing pyrochlore phases, stabilizing the perovskite structure, and improving the amount of perovskite phase as compared to the straight calcination method and the columbite/wolframite precursor method. The dielectric properties are improved correspondingly, namely exhibiting the largest value of dielectric maximum, the sharpest dielectric response peaks and the least frequency dispersion of dielectric properties in the ferroelectric ceramics prepared via the B-site oxide mixing route, which is considered as correlating with the amount of pyrochlore phases, ceramic density, grain size, and microstructure morphology of the ceramics synthesized.  相似文献   

18.
The silver paste with ceramics addition as end termination was performed on multilayer ceramic capacitors (MLCC) based on ZnO–B2O3 + Zn0.95Mg0.05TiO3 + 0.25TiO2 ceramic (ZnBO-ZMT′) with Ag95–Pd05 internal electrodes. A green sheet was prepared by tape casting using the ZnBO-ZMT′ powders. Ag95–Pd05 was attached on the green sheet as an internal electrode. After lamination, the green chips were pre-sintered at 800 °C for 1 h, then samples were dipped the external electrodes and were cofired together at 900 °C for 2 h. There is no extra curing process, so the production cost may be cut down and thermal shock of the MLCCs may be reduced. To improve the mismatch between end termination and dielectric body during sintering, the silver paste with different amounts of ceramics, e.g., 20, 30 and 40 wt.%, was added in this study. The mechanical and electrical properties of the MLCCs were investigated subsequently. The results showed that end termination with 40 wt.% ceramic addition has good performances on mechanical properties of MLCC, but equivalent series resistance (ESR) is a little bit higher compared to end termination with 20 and 30 wt.% ceramic addition.  相似文献   

19.
Al2O3添加剂对合成MgTiO3陶瓷相组成及介电性能的影响   总被引:4,自引:0,他引:4  
研究了添加剂Al2O3对MgO和TiO合成MgTiO3陶瓷烧结性、物相组成和微波介电性能的影响,XRD分析结果表明:没有添加Al2O3时,合成的MgTiO3陶瓷中只含有MgTiO3和MgTi2O5相;加入Al2O3后MgTiO3陶瓷中除了MgTiO3和MgTi2O5相外,还出现了MgAl2O4相,这是由于Al2O3和 MgO发生固相反应.MgAl2O4的出现虽然阻碍材料的致密化并导致密度下降,但是可以降低反应烧结合成MgTiO3陶瓷的相对介电常数和介电损耗.  相似文献   

20.
采用固相法制备了致密PZT95/5铁电陶瓷, 研究了低温下致密PZT95/5铁电陶瓷相结构和电性能的变化规律。变温X射线衍射(XRD)研究表明, 低温(-60℃)下极化和未极化致密PZT95/5铁电陶瓷相结构保持不变。电性能研究表明随着温度从30℃下降至-60℃, 致密PZT95/5铁电陶瓷的相对介电常数从278显著下降至173, 而电阻率和剩余极化强度基本保持不变。结合冲击波载荷下动态放电模拟分析, 发现相对介电常数的降低将引起动态电场增大至常温下的1.5倍, 这可能是导致致密PZT95/5铁电陶瓷低温下击穿概率显著增大的关键因素。  相似文献   

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