结合手势二进制编码和类-Hausdorff距离的手势识别

针对目前动态手势识别方法受手势旋转、平移、缩放的影响,并解决手势识别的实时性问题,提出一种基于手势二进制编码和类-Hausdorff距离模板匹配的手势识别方法.首先,把分割好的手势图像进行标准化处理,求出标准化图像中的手势主方向,建立二维手势直角坐标系,提取空间手势特征;其次,根据前五帧手势图像中手势像素点个数的变化量识别出动态手势类型;然后,用手势二进制描述子从动态手势类型中再筛选出可能的候选手势集合;最后,用类-Hausdorff距离模板匹配方法从候选手势集合中识别出最终手势.主要创新点在于：提出的动态手势类型识别和手势二进制描述子匹配的方法,大大缩短了动态手势识别的时间;提出的结合手势主方向的类-Hausdorff距离方法,不仅对旋转、平移和缩放手势具有不变性,而且对区分度较小的手势也具有较高的识别准确率.实验结果表明,在光照相对稳定的条件下,该方法能够实时准确的实现动态手势识别,总体识别率达到95%以上,对发生缩放的手势识别率能达到92%以上,对发生旋转的手势识别率能达到87%以上.本文算法已经在一个基于手势的人机交互界面中得到应用.     

一种基于轮廓线的形状描述与匹配方法

该文提出了一种新的基于目标轮廓线的形状描述与匹配方法。该方法将两个待匹配的目标的轮廓线等弧长地分割成相同数目的弧段,用直线段连接相邻的割点构成对轮廓线的多边形近似,用多边形的顶点到形状的几何中心的距离和其两个后继顶点的距离构成的3个距离串来描述形状,形状之间的相似度用它们的3个距离串的欧氏距离和来计算。这种描述方法满足惟一性、紧致性和不变性,而且计算简单,对形状的全局特征和局部特征都能很好地描述。实验结果表明,将该方法用于形状匹配具有较高的精度和可靠性。     

SIFT与形状上下文结合的异源图像匹配算法

针对红外图像和可见光图像灰度差异大、匹配困难的问题,提出了一种基于改进的尺度不变特征变换和形状上下文描述的局部多特征匹配算法。首先通过高斯差分检测算法分别提取两幅图像的特征点;针对特征点梯度方向存在反转现象,结合梯度镜像方法对特征点统计特征点邻域梯度方向信息;然后引入图像边缘特征生成形状上下文描述子,与梯度方向描述子级联成联合描述子;最后采用欧氏距离和卡方距离加权的联合距离和最近邻算法对特征点进行匹配。实验结果证明,在红外图像和可见光图像匹配中,该算法相比原始SIFT算法能有效减少误匹配特征点对,达到较高的匹配精度。     

多点触控手势在复杂系统数字界面中的交互研究

本文基于多点触控手势的交互属性,多点触控手势分为点按与辅助查找、滚动与缩放控制、全局控制三种类型,并将多点触控交互手势应用在态势地图的浏览查找操作、多任务切换这两个应用部分,使得系统操作更加自然方便、易于理解,也更加具有趣味性。     

基于改进型形状上下文描述子的字母手势识别

针对基于单目视觉信息的裸手手势,采用了基于改进型形状上下文描述子的分类识别方法。该方法首先通过肤色信息以及背景建模提取手部区域,然后利用单手指模板对手指进行检测,同时采用改进型形状上下文描述子对手部区域整体轮廓进行描述。在此基础上,使用有向无环图支持向量机(Directed Acyclic Graph Support Vector Machine,DAGSVM)对所提取的特征进行模式分类。其中,针对基本算法存在的问题,改进型形状上下文描述子将基于各个轮廓点的形状上下文直方图改为基于重心的形状上下文直方图,以提高计算速度,增强实时性。对30种字母手势,3种控制手势和10个数字手势开展的离线和在线实验结果表明,该方法取得了较好的分类准确率(离线:96%,在线:91%)和较高的实时性(识别时间14~15ms),适用于基于字母手势的实时人机交互。     

基于红外传感器和隐马尔可夫模型的动态手势识别

非接触式手势控制交互识别作为一种人机交互的新型技术,摆脱了传统的人机设备限制,更符合人际交流习惯。从其实现原理来看,非接触式手势控制交互识别有多种实现,有基于摄像头的识别,也有基于体感遥控的手势识别。本文采用了基于红外传感器的动态手势识别,其基本实现原理是利用四个定向二极管来感知反射的红外线能量,然后将该数据转换为四个方向的距离信息。对于如何从距离信息识别手势,一般多采用动态时间规整、人工神经网络以及隐马尔可夫模型(HMM, Hidden Markov Model)等模式匹配算法。HMM是一种随时间变化的信号模型,具有自动分割和分类能力,适合进行动态手势识别。本文通过HMM对传感器输出的四个方向距离信息进行训练识别,经过多次试验及调整,使得对于5种手势的识别率平均都达到了75%以上,并且随着手势训练数据的增加,识别率会随之提高。     

一种基于Leap Motion的直观体交互技术

Leap Motion系统可高精度实时检测并跟踪手掌、手指的位置和速度等信息,为大屏幕、远距离体交互提供有效途径。通过观察用户手势远距离操控现实环境中的物体,该文设计易于理解的体交互操作手势;借助对Leap Motion传感器工作区域的远近场划分,建立合理的物理空间和信息空间映射关系;针对利用深度相机的手部姿态解算问题,结合Leap Motion传感器的特点,提出一种结合手掌法向和指尖向量的空间姿态算法;结合大屏幕体交互的任务特点,设计了支持连续数据流的非接触式体交互原型系统;最后通过用户实验对原型系统进行评估。结果表明,和传统的2D体交互比较,该文算法的用户体验和表现更为自然、直观和高效。     

基于Leap Motion手势识别的悬浮真3D显示实时交互系统

提出基于Leap Motion手势识别的悬浮真3D显示实时交互系统,可实现对多个悬浮3D图像的独立交互.系统由显示和交互两个模块组成,显示模块利用集成成像3D显示屏再现3D图像,再通过二面角反射镜阵列实现悬浮真3D显示;交互模块通过Leap Motion识别手部各关节空间位置,提取手势信息并判断用户操作意图,利用提出的...     

基于计算机视觉的3D手势交互系统

随着计算机的广泛发展,键盘、鼠标等传统的人机交互方式很难满足用户自然、便捷的交互需求。研究手势建模、人手跟踪和手势交互系统的应用成为热点趋势。提出了一种简化的2D人手模型,该模型将人手建模为掌心点和5根手指,同时设计了一种基于粒子群优化(PSO)算法的人手跟踪方法,通过建模人手的生理和运动学约束关系,实现了基于2D/3D人手模型的PSO人手跟踪,该手势交互系统框架更具适用性和扩展性,融合了语义和反馈信息,提高了人手跟踪的鲁棒性和手势识别的准确度。     

基于光学的真三维触控定位与识别方法研究

通过介绍真三维显示技术与无标记空间定位原理,提出了真三维两点触控实现方法,搭建了真三维两点触控定位与识别系统。针对真三维空间定位绘制、空间两点跟踪和手势识别问题,研究了真三维两点触控交互方法。实验证明,在不需要佩戴任何标记和传感器的条件下,基于光学的空间两点触控方法与系统能够满足真三维显示的人机交互要求,且环境光的变化不干扰人机交互的操作。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.