TC4钛合金与Al6061铝合金热等静压扩散连接接头的界面特征及力学性能

对TC4钛合金和Al6061铝合金的异种金属进行了热等静压扩散连接实验,研究了TC4/Al6061连接接头的界面特征、形成机制和力学性能,并通过热力学分析解释相关实验现象。结果表明,热等静压扩散连接及后续退火处理后,两侧母材元素发生了明显的互扩散,其中Si、Mg元素在化学势驱动力作用下分别富集于扩散过渡区和Al侧界面。接头界面发生冶金反应生成TiAl₃、TiAl、Ti₃Al等金属间化合物,通过有效生成热模型计算表明TiAl₃相优先生成。硬度实验表明界面生成的Ti-Al金属间化合物具有较高的硬度。拉伸实验显示接头最大抗拉伸强度达到了144 MPa。     

Al-Ni-CuO中间层自蔓延连接Cf/Al与TiAl接头的微观形貌及其形成机制

采用14Al-2Ni-3CuO中间层真空加热实现了Cf/Al复合材料与TiAl合金的自蔓延连接,获得了良好的接头.分析了Al-Ni-CuO粉末中间层的DTA曲线,研究了其放热机制,阐述了接头界面的形成过程.结果表明,加热温度升高到500℃,铝与CuO即发生氧化还原反应,放出大量的热;加热温度升高到600℃左右,中间层局部的实际温度已经超过了铝的熔点,铝开始熔化,液态铝将固态镍包围,铝与镍发生反应,生成NiAl3.在最终接头的TiAl侧,中间层与TiAl生成TiAl3;在Cf/Al侧,中间层与Cf/Al生成NiAl3;中间层中的镍向Cf/Al复合材料中扩散,与铝基体发生反应生成NiAl3.     

基于Ti中间层的SiCp/6061-T6Al MMCs低功率激光-TIG复合焊组织与性能

以0.1mm厚的Ti箔做中间夹层,使用低功率激光-TIG复合焊的方式对SiCp/6061-T6Al MMCs 进行焊接,并对接头的宏观形貌、显微组织、物相、电阻率、抗拉强度及断口形貌进行分析。结果表明：激光功率对焊缝的成形有着较大影响;Ti箔的加入基本抑制了焊缝中针状Al₄C₃生成,并生成TiC增强相以及条状TiAl₃;焊缝区为等轴晶组织,熔合区为柱状晶组织,热影响区组织变化不明显;随着激光功率的增加接头的电阻率呈现出增加的趋势,并明显高于母材;在554W时接头的抗拉强度可达196.98MPa,是母材强度的54.71%。接头断口中几乎没有气孔,韧窝中的第二相粒子以TiC为主,接头呈现出以脆性断裂为主的脆-韧性混合断裂特征。     

基于Ti中间层的AZ31镁合金/6061铝合金电阻点焊研究

通过添加钛箔中间层,研究了镁/铝合金异种金属电阻搭接接头的微观组织与力学性能。研究结果表明,添加0.2mm厚度钛箔中间层可以大幅提高镁/铝异种金属电阻点焊接头的结合强度,接头的最大拉剪力随焊接电流的增大先增大后减小;当焊接电流为14kA时,最大拉剪力达到最大为2.2kN。铝钛界面处有TiAl₃生成,接头断裂在镁侧热影响区上,经过换算接头的剪切强度能够达到156MPa。通过SEM和EDS分析,添加钛中间层阻断了镁合金和铝合金的相互扩散,钛中间层阻碍了Mg-Al金属间化合物的生成,从而大大提高接头的结合强度。     

TiAl/Ti/Nb/GH99扩散连接接头的界面组织结构及接头强度

采用Ti/Nb复合中间层对TiAl与镍基高温合金(GH99)进行扩散连接.采用扫描电镜、电子探针和X射线衍射等手段对连接接头的生成相及界面组织结构进行分析,采用抗剪强度测试对接头的连接强度进行评价.结果表明,GH99/Nb/Ti/TiAl的典型界面结构为GH99/(Ni,Cr)ss/Ni3Nb/Ni6Nb7/Nb/(Ti,Nb)ss/α-Ti+(Ti,Nb)ss/Ti3Al/TiAl.当连接温度为900℃,连接时间为30 min,连接压力为20 MPa时,所得接头抗剪强度最高为273.8 MPa.随着连接温度的升高,界面组织结构及反应层厚度发生变化.当连接温度T>900℃时,界面处生成对接头强度有不利影响的Ni6Nb7反应层;根据试验结果,进一步分析了各反应层的形成过程,揭示了GH99/Nb和Nb/Ti/TiAl的界面扩散反应机制.     

Al2O3陶瓷/AgCuTi/GH99高温合金的钎焊接头力学性能

采用AgCuTi钎料对Al₂O₃陶瓷与GH99高温合金进行了钎焊连接,研究了工艺参数(连接温度、保温时间)的变化对接头力学性能的影响,并分析了不同参数下接头的断裂位置,结果表明：保温5min时,在不同的连接温度下进行钎焊,随着连接温度的升高,接头的抗剪强度先增后减,在900℃时取得最大值,为127.24MPa,连接温度较低时,主要断裂于Al₂O₃/钎料侧,随着温度的升高,接头TiNi₃反应层增厚,因此还有部分断裂于TiNi₃反应层/钎料界面;在连接温度为900℃时,随着保温时间的延长,接头的抗剪强度逐渐降低,保温时间较短时,主要要断裂于Al₂O₃/钎料界面,保温时间过长,TiNi₃反应层延伸入钎料中部且厚度大大增加,在该反应层中产生微裂纹,造成接头强度大大降低,此时部分断裂于钎料中部及TiNi₃反应层中。     

Al2O3P/6061Al复合材料瞬间液相扩散连接

用纯金属作中间层TLP连接颗粒增强铝基复合材料,接头存在增强相偏聚区,是接头力学性能的薄弱区域.控制增强相偏聚区是改善接头力学性能的一种有效途径.文中尝试用Cu,Al金属复合中间层TLP连接Al2O3P/6061Al复合材料,探讨了其接头的显微结构和力学性能特点.结果表明,用Cu,Al金属复合中间层能够控制接头增强相偏聚,改善接头抗剪强度.在连接温度600℃,保温时间60min的工艺条件下,10 μm Al/10 μm Cu/10 μm Al复合中间层接头增强相偏聚明显下降,接头抗剪强度110 MPa;1.5 μm Cu/10 μm Al/1.5 μm Cu复合中间层接头无明显的增强相偏聚,接头抗剪强度123 MPa.     

冷轧Ti/Al层状复合材料固-液反应过程中的界面微观组织演变

将冷轧Ti/Al层状复合材料在675~750 ℃下进行不同时间的退火处理,退火过程中钛和铝都保持过剩,研究了Ti/Al层状复合材料的界面微观组织演变。结果表明：Ti和Al的界面层由2个亚层组成,其中一个为紧密的TiAl₃亚层,其微观结构为紧密的TiAl₃层,其中分布着随机取向的充满Al的裂纹,另一个为颗粒状的TiAl₃亚层,其微观组织结构是颗粒状的TiAl₃分布在Al基体中。在不同的退火温度和时间条件下,紧密TiAl₃亚层的厚度几乎没有变化,但是颗粒状亚层的厚度随着退火温度及时间的增加而增加;另外,界面层中的TiAl₃颗粒的体积分数在不同的温度下均随着退火时间的延长而下降。因此提出了反应扩散模型来描述界面层的形成机理,在此模型中,TiAl₃相是化学反应和扩散的结果,并且也考虑了TiAl₃相的溶解。计算结果表明TiAl₃相的形成与生长由化学反应控制,其等效厚度与退火时间之间遵循线性规律,这主要是因为Ti和Al原子能够快速地通过紧密的薄TiAl₃亚层。     

预热温度对三维五向Cf/Al复合材料微观组织及室温与高温力学性能的影响

以石墨纤维三维五向织物为增强体,铝合金ZL301为基体材料,采用真空辅助压力浸渗法制备了三维五向增强C_f/Al复合材料,研究了不同温度制备的复合材料微观组织特征和界面反应程度,测试了复合材料在室温和高温下的拉伸力学性能并分析了其断口形貌。结果表明：复合材料相对致密度随制备温度提高而增加,纤维局部偏聚现象也明显减少,与此同时,界面反应物Al₄C₃相随制备温度提高而显著增多,530℃到570℃复合材料室温拉伸极限强度随组织缺陷减少而增加,570℃到600℃复合材料室温极限拉伸强度随界面反应程度增大而显著降低;高温拉伸极限强度随制备温度提高而增加,适当提高界面反应程度有利于提高复合材料高温力学性能,高温拉伸中基体合金回复软化和界面结合强度弱化促进了复合材料断裂过程中的纤维拔出与界面滑移。     

以Ti-Zr-Cu-Ni-Fe合金为中间层的Ti3Al/TiAl瞬间液相扩散连接

采用瞬间液相扩散焊方法,以自主设计的Ti-Zr-Cu-Ni-Fe系新型合金作为中间层,实现了Ti₃Al基合金与TiAl异种材料之间的连接.利用扫描电镜、电子探针以及X射线衍射分析等方法对接头界面微观组织和物相进行了分析.结果表明,Ti₃Al/TiAl接头主要由富Ti相、Ti₂Al反应层、α₂-Ti₃Al相以及溶入了Al元素的残余中间层组成;随着焊接温度的升高,中间层与母材的溶解与扩散变得更加强烈,使得Ti₂Al反应层厚度增加,残余中间层的数量减少.抗剪测试结果显示,焊接接温度在880~1010℃范围内时,提高焊接温度有利于接头强度的提高;接头在室温下的最大抗剪强度达到502 MPa,在500℃下为196 MPa.     

High strength and good ductility of casting Al-Cu alloy modified by PrxOy and LaxOy

A modified Al-Cu alloy with high tensile strength and ductility of about 574.0 MPa and 10.4%, respectively, was obtained by adding multiple rare earth oxides (Pr_xO_y and La_xO_y) as modifier. Compared with the unmodified Al-Cu alloy, the tensile strength and ductility of the modified sample were increased by 24.3% and 42.5%, respectively. The improvement both in the strength and ductility may attribute to the finer crystal grains and dendrites, more homogeneously distributed θ′ phase precipitates and the intermetallic compounds formed at the crystal grain boundaries as well as in the space of the dendrites.     

Structural, mechanical and corrosion properties of TiOxNy/ZrOxNy multilayer coatings

Results on the deposition and characterization of TiO_xN_y/ZrO_xN_y multilayers, with bilayer periods of 20 and 400 nm, are presented. The coatings were deposited on TiNiNb alloy substrates by the pulsed magnetron sputtering method. The elemental composition, hardness, adhesion and corrosion resistance of the coatings were analyzed.As resulted from the XPS analysis, the individual layers consisted of a mixture of titanium or zirconium oxynitrides and corresponding oxides. X-ray analysis revealed that the coatings were amorphous. Only slight differences between the microhardness and adhesion values of the coatings with small and large bilayer period Λ were found. The experiments also showed that the multilayered coatings improved the corrosion resistance of the uncoated alloy and reduced the amount of ion release in artificial body fluids.     

MOCVD growth and characterizations of BxAl1−xAs and BxAl1−x−yInyAs alloys

Zinc-blende B_xAl_1−xAs and B_xAl_1−x−yIn_yAs alloys have been grown on exactly oriented (0 0 1)GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). The influence of susceptor coating, growth temperature and gas-phase boron mole fraction on boron incorporation into AlAs has been comprehensively investigated. It has been found that boron incorporation into AlAs could be enhanced and the optimal growth temperature range of B_xAl_1−xAs alloys changed from 580 °C to 610 °C when SiC-coated graphite susceptors were replaced by the non-coated ones. In this study, the maximum boron composition x of 2.8% was achieved for the pseudomorphically strained B_xAl_1−xAs alloys. AFM measurements show that RMS roughness of B_xAl_1−xAs alloys increased sharply with the increase of gas-phase boron mole fraction. Raman spectra of B_xAl_1−xAs alloys show a linear increase of the BAs shift with boron composition x. Based on BAlAs deposition, bulk B_xAl_1−x−yIn_yAs (x = 1.9%) quaternary alloy was grown lattice-matched to GaAs successfully. Moreover, 10-period BAlAs/GaAs and BAlInAs/GaAs MQW heterostructures were also demonstrated.     

Nature of CoCrFeMnNi/Fe and CoCrFeMnNi/Al Solid/Solid Interface

To shed light into the application potential of high-entropy alloys as "interlayer" materials for Al-steel solid-state joining,we investigated the nature of the CoCrFeMnNi/Fe and CoCrFeMnNi/Al solid/solid interfaces,focusing on the bonding behav-ior and phase components.Good metallurgical bonding without the formation of hard and brittle IMC can be achieved for CoCrFeMnNi/Fe solid/solid interface.In contrast to the formation of Al5Fe2 phase at the Fe/Al interface,Al13Fe4-type IMC,in which the Fe site is co-occupied equally by Co,Cr,Fe,Mn and Ni,dominates the CoCrFeMnNi/Al interface.Although the formation of IMC at the CoCrFeMnNi/Al interface is not avoidable,the thickness and hardness of the Al13(CoCrFeMnNi)4 phase formed at the CoCrFeMnNi/Al interface are significantly lower than the Al5Fe2 phase formed at the Fe/Al interface.The activation energies for the interdiffusion of Fe/Al and CoCrFeMnNi/Al static diffusion couple are 341.6 kJ/mol and 329.5 kJ/mol,respectively.Despite this similarity,under identical static annealing condition,the interdiffusion coefficient of the CoCrFeMnNi/Al diffusion couple is significantly lower than that of the Fe/Al diffusion couple.This is thus mainly a result of the reduced atomic mobility/diffusivity caused by the compositional complexity in CoCrFeMnNi high-entropy alloy.     

Cr/CrN/CrNC/CrC/Cr-DLC梯度膜层的研究

采用中频磁控溅射结合离子源技术沉积Cr／CrN／CrNC／CrC／Cr-DLC膜层。利用扫描电镜（SEM）、电子能谱（EDS）、Raman光谱和俄歇深层剥层分别对膜层微观形貌、成分组成、键结构及梯度成分深层分布进行分析；采用努氏显微硬度计、摩擦磨损试验机、划痕仪及洛氏硬度计测评膜层机械性能。结果表明：采用中频磁控溅射可沉积出大面积Cr／CrN／CrNC／CrC／Cr-DLC梯度膜层；Cr溅射功率对C键结构影响不大，但表层DLC中Cr的含量和膜层厚度随中频功率增大而增大；随DLC中掺Cr量增多，膜层硬度及摩擦因数略有上升；采用梯度过渡层及掺入金属Cr提高了膜层附着力，但过高的中频功率使沉积离子能量偏高，膜层压应力增加反而降低了膜层附着性能。     

TiN/TiCN/Al2O3/TiN与TiN/TiCN/Al2O3/TiCNO多层涂层的组织性能比较

目的对比TiN/TiCN/Al_2O_3/TiN和TiN/TiCN/Al_2O_3/TiCNO两种多层涂层的组织性能。方法采用化学气相沉积(CVD)技术在硬质合金基体上沉积TiN/TiCN/Al_2O_3/TiN和TiN/TiCN/Al_2O_3/TiCNO两种多层涂层。通过X射线衍射仪(XRD)和扫描电子显微镜(SEM)分析涂层的物相和组织形貌,采用纳米力学测试系统测试涂层顶层的硬度和弹性模量,利用显微维氏硬度计和划痕仪分别测量涂层的显微硬度和结合强度,利用往复式多功能摩擦磨损试验机研究涂层的摩擦磨损性能。结果顶层TiN晶粒为柱状晶,顶层TiCNO晶粒呈细针状。与顶层TiN相比,顶层TiCNO硬度更大,抗塑性变形能力更强。与以TiN为顶层的多层涂层相比,以TiCNO为顶层的多层涂层表面粗糙度、摩擦系数较大,结合强度较低。当磨损只发生在顶层时,耐磨性取决于顶层涂层的性能,TiN/TiCN/Al_2O_3/TiN的磨损体积和磨损率为TiN/TiCN/Al_2O_3/TiCNO的1.2倍。当磨损进行到顶层与Al_2O_3层界面时,结合强度对耐磨性也有重要影响,TiN/TiCN/Al_2O_3/TiN的磨损体积和磨损率是TiN/TiCN/Al_2O_3/TiCNO的82%。结论与TiN/TiCN/Al_2O_3/TiN相比,TiN/TiCN/Al_2O_3/TiCNO的顶层TiCNO硬度较大,抗塑性变形能力强,其顶层耐磨性较好。改善TiN/TiCN/Al_2O_3/TiCNO多层涂层表面粗糙度和结合强度将进一步提高该涂层的摩擦磨损性能。     

In-situ investigation of deformation behavior and fracture forms of Ti/Al/Mg/Al/Ti laminates

In-situ bending and stretching were conducted on hot-rolled and annealed Ti/Al/Mg/Al/Ti laminates, with a focus on crack initiation and propagation of intermetallics and component layers, which helps to clarify their deformation behavior and fracture forms. The results show that delamination is the early fracture form of laminate with or without intermetallics at Al/Mg interface, so Al/Mg interfacial bonding strength determines the mechanical properties of laminate. Various and irregular intermetallics cracks lead to Al/Mg interface delamination in annealed laminate and help to release stress. Necking and fracture of component layers are observed at the late deformation stage, and the sequence is Al, Mg and Ti layers, resulting from their strength. Angle between crack propagation direction and stretching direction of Mg layer both in rolled and annealed laminates is around 45° due to the effect of shear deformation, and crack convergence leads to final complete fracture of Mg layer.     

Preparation and thermal conductivities of filled tetrahedral LixIn1−xZnxSb and the related compounds

Li-filling in tetrahedral InSb and related compounds was attempted to investigate its effect on their thermal conductivities. Li-filled Li_0.2In_0.8Zn_0.2Sb, Li_0.4In_0.6Zn_0.4Sb, LiZnSb, and Li_0.16Ga_0.84Zn_0.16Sb sintered samples were prepared by powder metallurgy. The filled samples had much lower room temperature lattice thermal conductivities than those of the corresponding unfilled materials; the values of the Li_0.4In_0.6Zn_0.4Sb, LiZnSb, and Li_0.16Ga_0.84Zn_0.16Sb were 23, 45, and 72 mW cm⁻¹K⁻¹, respectively. Filled tetrahedral compounds such as Li_xIn_1−xZn_xSb might be good thermoelectric materials.     

20Wf/30ZrCp/W复合材料的组织结构与力学性能

采用真空热压烧结法制备了致密度为98.5%的20W     

Preparation and microwave absorbency of Fe/epoxy and FeNi3/epoxy composites

The focus of this study was placed on the lightness of microwave absorbing effective metal/epoxy composites. For such a focus, high aspect ratio of flake iron powder and high absorbing FeNi₃ were prepared. The iron powder particle size was reduced significantly through wet milling, comparing to dry milling. The FeNi₃ alloy powders were synthesized by mechanical alloying (MA); then, the particle size was reduced through wet milling. The iron powder and FeNi₃ alloy were characterized by scanning electron microscopy (SEM) and X-ray diffraction. SEM of the metal particles showed the flake and small structure by wet milling. The microwave absorbing effectiveness of metal/epoxy composite was affected by the structure, loading and dispersion of metal materials. The polyvinylpyrrolidone (PVP) plays an important role in suspending metal powders in wet milling to reduce powder size. Besides, the PVP will be a coupling agent in inhibiting the aggregation and enhancing the interfacial interaction between metal and epoxy. Results suggested that after the above manufacturing process, the microwave absorbency was enhanced substantially. Composite films of Fe/epoxy and FeNi₃/epoxy 1.6 mm in thickness possessed a microwave absorbency above 10 dB at 9.2-15.2 GHz and 13.1-16.2 GHz, respectively.