GaAs单片集成激光器驱动电路在片测量

用多触头微波探针,对GaAs单片集成激光器驱动电路芯片进行了在片测试和筛选,测得芯片频率响应带宽为3.8GHz.使用高速增益开关半导体激光器作为采样光脉冲源,采用了背面直接采样方式建立了电光采样测试仪.检测了GaAs单片集成激光器驱动电路芯片内部点的高速电信号波形.     

用GaAs MMIC实现2.1GHz的预失真线性化单片

介绍了一种预失真线性化单片电路,该电路单电源工作,采用预失真技术结合有源反馈的方法,完成了单片预失真线性化电路的研制.预失真线性化单片电路采用75 m m Ga As MMIC工艺研制,芯片面积约为4 mm2 .结果表明,2 .1GHz时此预失真单片电路可改善放大器的三阶互调分量9d B     

GaAs单片集成激光器驱动电路

设计和制造了一个GaAs单片集成激光器驱动电路。描述了电路的设计考虑,制作过程和器件与激光器驱动电路的静态特性。该电路具有大于30mA的电流驱动能力。     

16.5～20GHz PHEMT单片功率放大器

采用南京电子器件研究所的 76 mm Ga As的 PHEMT单片技术 ,进行了 1 6 .5～ 2 0 GHz的 PHEMT MMIC的设计与研制。其中 PHEMT器件选用双平面掺杂 Al Ga As/In Ga As/Ga As PHEMT异质结结构 ,0 .5μm栅长的 76 mm Ga As工艺制作。在 MMIC设计中 ,准确的器件模型是设计 Ku波段单片的关键。为了保证单片研制的成功 ,利用 Agilent软件进行了 PHEMT器件模型的提取。模型可直接应用于 HP- EESOF Libra软件中 ,进行线性和非线性分析。PHEMT单片放大器采用三级有耗匹配放大器拓扑 ,输入和输出端口匹配至 50 Ω,CPW形式引…     

2～6GHz单片功率放大器

报道了有耗匹配宽带单片功率放大器的研究方法和结果。该两级单片功放电路采用自建的 Root非线性模型进行了谐波平衡分析。在 2 .0～ 6.7GHz频带上线性增益为 17d B,平坦度为± 0 .75d B,输入和输出驻波分别小于 2。全频带上 ,饱和输出功率为 1～ 1.4 W,功率附加效率大于2 0 %。该宽带单片功率放大器在 76mm Ga As单片 MMIC工艺线上用全离子注入、0 .5μm栅长工艺研制完成 ,电路芯片面积为 0 .1mm× 2 .6mm× 2 .7mm。     

1.25Gb/s InP基多量子阱激光器与HBT驱动电路的单片集成

描述了一种基于InP材料沿[011]晶向湿法化学腐蚀形成平滑侧壁实现的InP基多量子阱激光器和异质结双极晶体管驱动电路单片集成.通过一个横向缓冲台面结构,降低了激光器阳极和晶体管集电极互连工艺的难度,改善了光发射单片光电集成电路的可制造性.采用该方法制作的光发射单片直流功耗为120mW,在码长223-1传输速率1.5Gb/s伪随机码信号调制下有清晰的眼图,光输出功率为2dBm.     

0.2μmT形栅技术在10Gbps激光驱动电路研制中的应用

0.2μm T形栅制作技术在10 0 mm Ga As激光驱动电路芯片研制中获得了成功的应用.优化的栅制作工艺保证了形貌良好的栅线条,获得了优良的晶体管直流参数和高频性能.栅工艺重复性好,整片内器件性能均匀一致,确保了电路的成功研制.实际电路测试结果表明,在10 0 mm Ga As片上制备的PHEMT驱动电路的芯片测试合格率达到70 %以上,可靠性良好     

1.25Gb/s InP基多量子阱激光器与HBT驱动电路的单片集成

描述了一种基于InP材料沿[011]晶向湿法化学腐蚀形成平滑侧壁实现的InP基多量子阱激光器和异质结双极晶体管驱动电路单片集成.通过一个横向缓冲台面结构,降低了激光器阳极和晶体管集电极互连工艺的难度,改善了光发射单片光电集成电路的可制造性.采用该方法制作的光发射单片直流功耗为120mW,在码长223-1传输速率1.5Gb/s伪随机码信号调制下有清晰的眼图,光输出功率为2dBm.     

移动通信用GaAs微波单片集成电路的CAD技术研究

介绍了一个移动通信用 Ga As MMIC集成电路 CAD系统。该系统包括单片电路器件模型系统和 CAD软件包。应用该系统已完成多个移动通信电路的优化设计 ,取得良好效果。     

InGaAsP激光器和驱动电路的单片集成

日本松下电气工业公司中心研究实验室对InGaAsP 二极管激光器和驱动电路在单片InP基片上单片集成已进行了实验验证。驱动电路以异质结双极晶体管为基础。用掩埋式异质结二极管激光器掩埋外延层制成。研制者已经实现了一个关键性的集成指标，即能够高速运转，用集成电路可以以1.6 GHz的速率调制激光输出。     

16×16 optical-fiber crossbar switch operating at 0.85 μm

An optical-fiber crossbar switch has been constructed using fully integrated GaAs optoelectronic receivers, custom monolithic GaAs laser drivers, and an electrical 32×32 silicon crossbar switch. 470 Mb/s operation has been achieved with a bit error rate of less than 10^-12. The approach uses a monolithic GaAs optoelectronic integrated receiver to convert optical signals into electrical signals that are fed into an Si 32×32 electronic crossbar switch. The switch outputs are used to drive laser transmitters consisting of a custom monolithic GaAs IC laser driver and a 0.85 μm GaAs/AlGaAs laser. The system could be reconfigured in 1 μm, limited by the control logic, with the switch chip capable of reconfiguration in 35 ns. No errors are induced by reconfiguration     

New hybrid integrated laser diode-drivers using microsolder bumpbonding: SPICE simulation of high-speed modulation characteristics

This paper proposes two types of new hybrid integrated laser diode (LD)-drivers that use microsolder bump bonding instead of conventional wire bonding. In one, an LD and a driver are flip-chip bonded to each other; in the other, an LD and a driver are flip-chip bonded onto a substrate. Their performances are compared to those of a monolithic LD-driver and a conventional hybrid one using wire bonding by a simulation program with integrated circuit emphasis (SPICE) with particular emphasis on high-speed LD modulation. The nonreturn-to-zero (NRZ) eye patterns modulated at signal speeds up to 30 Gb/s by the new hybrid integrated LD-drivers were hardly inferior to those by the monolithic LD-driver, whereas those by conventional hybrid ones were greatly degraded over 10 Gb/s. The new hybrid integrated LD-drivers are a feasible alternative to monolithic ones for high-speed optical transmitters     

15 Gbit/s integrated laser diode driver using 0.3 mu m gate length quantum well transistors

An integrated laser diode driver was realised using enhancement/depletion 0.3 mu m recessed-gate AlGaAs/GaAs quantum well transistors. Fully-open eye diagrams were observed at bit rates up to 10 Gbit/s with 50 Omega loads. The maximum DC and modulation current were 25 and 45 mA, respectively. The power consumption is less than 450 mW.<>     

High-performance quasi-optical GaAs monolithic mixer at 110 GHz

A novel GaAs monolithic integrated circuit mixer has been fabricated which is impedance matched to fundamental waveguide. It consists of a slot coupler, coplanar transmission line, surface-oriented Schottky-barrier diode, and RF bypass capacitor monolithically integrated on the GaAs surface. At 110 GHz, a monolithic mixer module mounted in the end of a waveguide horn has an uncooled double-sideband (DSB) mixer noise temperature of 339 K and conversion loss of 3.8 dB.     

New encapsulation modules for mm-wave GaAs transit-time devices

A new encapsulation technique for GaAs transit-time devices in modules made of semi-insulating GaAs is reported. The modules, together with the active diode structure, were manufactured from one wafer by photolithographic processes. This technique offers possibilities for further reduction of the parasitics. First experimental results from modules with integrated IMPATT diode structures for V- and W-band frequencies are given.<>     

大功率半导体激光器脉冲驱动电源研制

研制了一种大电流、窄脉宽的半导体激光器驱动电源,该驱动电源激励半导体激光器用于驱动砷化镓光导开关。驱动电路采用高速金属氧化物半导体场效应晶体管(MOSFET)作为开关,为半导体激光器提供一个前沿快(1.2 ns)、脉宽窄(15 ns)、峰值电流大(72 A)的脉冲驱动电流,并可根据需要调节电路中的参数,获得不同前沿、不同脉宽、不同峰值的电流脉冲。半导体激光器输出的激光脉冲功率可达75 W,上升前沿约3 ns,抖动均方根小于200 ps,可稳定触发工作在非线性模式下的砷化镓光导开关。     

A 1.5 Gbit/s GaAs four-channel selector LSI with monolithicallyintegrated newly structured GaAs ohmic contact MSM photodetector andlaser driver

A monolithic integrated 1.5 Gb/s high-speed four-channel optoelectronic integrated circuit (OEIC) selector GaAs LSI circuit is discussed. This LSI circuit incorporates photodetectors, preamplifiers, a selector, a decision circuit, and a high-speed laser driver. To achieve high efficiency, a AuGe/Ni-GaAs structured ohmic contact metal-semiconductor-metal (OC-MSM) is used for the interdigitated structural photodetector. With this OC-MSM structure, photocurrent is approximately twice as effective as with the conventional Schottky contact MSM structure. The new LSI has a maximum operating speed of 1.5 Gb/s and exhibits low power dissipation of 927 mW     

Two-dimensional 8×8 photoreceiver array and VCSEL drivers forhigh-throughput optical data links

Two custom GaAs integrated circuits (ICs) have been developed for enabling vertical cavity surface emitting laser (VCSEL) arrays to be used for high throughput spatial division multiplexed (SDM) optical data links. A 16-channel driver IC was developed to drive the VCSEL array and an 8×8 monolithic photoreceiver, which spatially matches the VCSEL array, was developed for receive. Both of these circuits were fabricated in a standard commercial GaAs MESFET process with parasitic photodetectors used for the photoreceivers. Power dissipation and circuit size were primary design challenges for both circuits. The present 8×8 array size along with an estimated usable channel speed of 1 Gb/s allows for an aggregate throughput of 64 Gb/s     

Monolithic microwave FET oscillator temperature-stabilised with a Schottky diode as a sensor

A monolithic microwave FET oscillator built in GaAs is frequency-stabilised with temperature using a Schottky diode as a temperature sensor. The monolithic integrated circuit includes both the oscillator (f=7.44 GHz) and its temperature sensor. The actual performance gives a stabilisation of the frequency to better than 1 MHz in the temperature range from ?40 to +80°C.