A low-power CMOS Bluetooth RF transceiver with a digital offset canceling DLL-based GFSK demodulator

This paper presents a fully integrated 0.18-/spl mu/m CMOS Bluetooth transceiver. The chip consumes 33 mA in receive mode and 25 mA in transmit mode from a 3-V system supply. The receiver uses a low-IF (3-MHz) architecture, and the transmitter uses a direct modulation with ROM-based Gaussian low-pass filter and I/Q direct digital frequency synthesizer for high level of integration and low power consumption. A new frequency shift keying demodulator based on a delay-locked loop with a digital frequency offset canceller is proposed. The demodulator operates without harmonic distortion, handles up to /spl plusmn/160-kHz frequency offset, and consumes only 2 mA from a 1.8-V supply. The receiver dynamic range is from -78 dBm to -16 dBm at 0.1% bit-error rate, and the transmitter delivers a maximum of 0 dBm with 20-dB digital power control capability.     

A dual-mode 802.11b/bluetooth radio in 0.35-/spl mu/m CMOS

A fully integrated dual-mode CMOS transceiver tuned to 2.4 GHz consumes 65 mA in receive mode and 78 mA in transmit mode from a 3-V supply. The radio includes all the receive and transmit building blocks, such as frequency synthesizer, voltage-controlled oscillator (VCO), and power amplifier, and is intended for use in 802.11b and Bluetooth applications. The Bluetooth receiver uses a low-IF architecture for higher level of integration and lower power consumption, while the 802.11b receiver is direct conversion. The receiver achieves a typical sensitivity of -88 dBm at 11 Mb/s for 802.11b, and -83 dBm for Bluetooth mode. The receiver minimum IIP3 is -8 dBm. Both transmitters use a direct-conversion architecture, and deliver a nominal output power of 0 dBm, with a power range of 20 dB in 2-dB steps.     

A 1 V Wireless Transceiver for an Ultra-Low-Power SoC for Biotelemetry Applications

This paper presents a 1 V RF transceiver for biotelemetry and wireless body sensor network (WBSN) applications, realized as part of an ultra low power system-on-chip (SoC), the Sensiumtrade. The transceiver utilizes FSK/GFSK modulation at a data rate of 50 kbit/s to provide wireless connectivity between target sensor nodes and a central base-station node in a single-hop star network topology operating in the 862-870 MHz European short-range-device (SRD) and the 902-928 MHz North American Industrial, Scientific & Medical (ISM) frequency bands. Controlled by a proprietary media access controller (MAC) which is hardware implemented on chip, the transceiver operates half-duplex, achieving -102 dBm receiver input sensitivity (for 1E-3 raw bit error rate) and up to -7 dBm transmitter output power through a single antenna port. It consumes 2.1 mA during receive and up to 2.6 mA during transmit from a 0.9 to 1.5 V supply. It is fabricated in a 0.13 mum CMOS technology and occupies 7 mm² in a SoC die size of 4 times 4 mm².     

A 2.7-V 1.8-GHz fourth-order tunable LC bandpass filter based on emulation of magnetically coupled resonators

A low-voltage fourth-order RF bandpass filter structure based on emulation of two magnetically coupled resonators is presented. A unique feature of the proposed architecture is using electric coupling to emulate the effect of the coupled inductors, thus providing bandwidth tuning with small passband ripple. Each resonator is built using on-chip spiral inductors and accumulation-mode pMOS capacitors to provide center frequency tuning. The filter has been implemented in HP 0.5-/spl mu/m CMOS process and occupies an area of 0.15 mm/sup 2/. It consumes 16 mA from a single 2.7-V supply at a center frequency of 1.84 GHz and a bandwidth of 80 MHz while providing a passband gain of 9 dB and more than 30 dB of image attenuation for an IF frequency of 100 MHz. The measured output 1-dB compression point and output noise power spectral densities are -16 dBm and -137 dBm/Hz, respectively. This results in a 1-dB compression dynamic range of 42 dB. The filter minimum power supply voltage for proper operation is 2 V. The chip experimental results are in good agreement with theoretical results.     

用于434/868MHz FSK/OOK CMOS发射机的锁相环设计

一种可输出434/868MHz信号的Σ-Δ分数分频锁相环在0.35μmCMOS工艺中集成。该发射机系统采用直接调制锁相环分频比的方式实现FSK调制,OOK的调制则通过功率预放大器的开-关实现。为了降低芯片的成本和功耗,发射机采用了电流数字可控的压控振荡器(VCO),以及片上双端-单端转换电路,并对分频器的功耗设计进行研究。经测试表明,锁相环在868MHz载波频偏为10kHz、100kHz和3MHz处的相位噪声分别为-75dBc/Hz、-104dBc/Hz和-131dBc/Hz,其中的VCO在100kHz频偏处的相位噪声为-108dBc/Hz。在发送模式时,100kHz相邻信道上的功率与载波功率之比小于-50dB。在直流电压2.5V的工作条件下,锁相环的电流为12.5mA,包括功率预放大器和锁相环在内的发送机总面积为2mm2。     

A 3-V, 0.35-/spl mu/m CMOS Bluetooth receiver IC

A fully integrated CMOS low-IF Bluetooth receiver is presented. The receiver consists of a radio frequency (RF) front end, a phase-locked loop (PLL), an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, and a frequency offset cancellation circuit. The highlights of the receiver include a low-power active complex filter with a nonconventional tuning scheme and a high-performance mixed-mode GFSK demodulator. The chip was fabricated on a 6.25-mm/sup 2/ die using TSMC 0.35-/spl mu/m standard CMOS process. -82 dBm sensitivity at 1e-3 bit error rate, -10 dBm IIP3, and 15 dB noise figure were achieved in the measurements. The receiver active current is about 65 mA from a 3-V power supply.     

A harmonic injection-locked frequency divider in 0.18-/spl mu/m SiGe BiCMOS

A harmonic injection-locked frequency divider for high-speed applications is presented in this letter. In order to enhance the bandwidth of the high-order frequency division, a positive feedback is employed in the design of the subharmonic mixer loop. The proposed circuit is implemented in a 0.18-/spl mu/m SiGe BiCMOS process. With a singled-ended super-harmonic input injection of 0dBm, the frequency divider exhibits a locking range of 350MHz (from 59.77 to 60.12GHz) for the divide-by-four frequency division while maintaining an output power of -16.6/spl plusmn/ 0.5dBm within the entire frequency range. The frequency divider core consumes a dc power of 50mW from a 3.6-V supply voltage.     

A 2.4-GHz 0.25-/spl mu/m CMOS dual-mode direct-conversion transceiver for bluetooth and 802.11b

A dual-mode transceiver integrates the transmitter of 0-dBm output power and the receiver for both Bluetooth with -87 dBm sensitivity and 802.11b with -86 dBm sensitivity in a single chip. A direct-conversion architecture enables the maximum reuse and the optimal current consumption of the various building blocks in each mode for a low-cost and low-power solution. A single-ended power-amplifer (PA) driver transmits the nominal output power of 0 dBm with 18-dB gain control in 3-dB steps. Only little area overhead is required in the baseband active filter and programmable gain amplifier (PGA) to provide the dual-mode capability with optimized current consumption. The DC-offset cancellation scheme coupled with PGAs implements the very low high-pass cutoff frequency with a smaller area than required by a simple coupling capacitor. Fabricated in 0.25-/spl mu/m CMOS process, the die area is 8.4 mm/sup 2/ including pads, and current consumption in RX is 50 mA for Bluetooth and 65 mA for 802.11b from a 2.7-V supply.     

An eighth order channel selection filter for low-IF and zero-IF DVB tuner applications

An eighth order active-RC filter for low-IF and zero-IF DVB tuner applications is presented, which is implemented in Butterworth biquad structure. An automatic frequency tuning circuit is introduced to compensate the cut-off frequency variation using a 6-bit switched-capacitor array. Switched-resistor arrays are adopted to cover different cut-off frequencies in low-IF and zero-IF modes. Measurement results show that precise cut-off frequencies at 2.5, 3, 3.5 and 4 MHz in zero-IF mode, 5, 6, 7 and 8 MHz in low-IF mode can be achieved, 60 dB frequency attenuation can be obtained at 20 MHz, and the in-band group delay agrees well with the simulation. Two-tone testing shows the in-band IM3 achieves -52 dB and the out-band IM3 achieves -55 dB with -11 dBm input power.This proposed filter circuit, fabricated in a SMIC 0.18 μm CMOS process, consumes 4 mA current with 1.8 V power supply.     

A 5.25-GHz image rejection RF front-End Receiver With Polyphase filters

A 5.25-GHz image rejection (IR) radio frequency (RF) front-end receiver is proposed, which is implemented in 0.18-/spl mu/m CMOS technology. The proposed receiver adopts both a high-intermediate frequency (IF) and the double quadrature architecture to achieve high IR at 5-GHz frequency. The measured results show a power gain of 14 dB, a minimum noise figure of 7.9dB, and IIP3 of -8dBm. The measured maximum image rejection ratio is 45dBc. The receiver consumes a total of 32mA from a 1.8-V supply.     

A 0.13 μm CMOS UWB RF Transmitter with an On‐Chip T/R Switch

This paper presents a fully integrated 0.13 μm CMOS MB‐OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low‐pass filter, a variable gain amplifier, a voltage‐to‐current converter, an I/Q up‐mixer, a differential‐to‐single‐ended converter, a driver amplifier, and a transmit/receive (T/R) switch. The proposed T/R switch shows an insertion loss of less than 1.5 dB and a Tx/Rx port isolation of more than 27 dB over a 3 GHz to 5 GHz frequency range. All RF/analog circuits have been designed to achieve high linearity and wide bandwidth. The proposed transmitter is implemented using IBM 0.13 μm CMOS technology. The fabricated transmitter shows a ?3 dB bandwidth of 550 MHz at each sub‐band center frequency with gain flatness less than 1.5 dB. It also shows a power gain of 0.5 dB, a maximum output power level of 0 dBm, and output IP3 of +9.3 dBm. It consumes a total of 54 mA from a 1.5 V supply.     

A 2.4-GHz CMOS transceiver for Bluetooth

A fully integrated CMOS transceiver tuned to 2.4 GHz consumes 46 mA in receive mode and 47 mA in transmit mode from a 2.7-V supply. It includes all the receive and transmit building blocks, such as frequency synthesizer, voltage-controlled oscillator (VCO), power amplifier, and demodulator. The receiver uses a low-IF architecture for higher level of integration and lower power consumption. It achieves a sensitivity of -82 dBm at 0.1% BER, and a third-order input intercept point (IIP3) of -7 dBm. The direct-conversion transmitter delivers a GFSK modulated spectrum at a nominal output power of 4 dBm. The on-chip voltage controlled oscillator has a close-in phase-noise of -120 dBc/Hz at 3-MHz offset     

A Fully Integrated 2.4-GHz IEEE 802.15.4-Compliant Transceiver for ZigBee™ Applications

A single-chip 2.4-GHz CMOS radio transceiver with integrated baseband processing according to the IEEE 802.15.4 standard is presented. The transceiver consumes 14.7 mA in receive mode and 15.7 mA in transmit mode. The receiver uses a low-IF topology for high sensitivity and low power consumption, and achieves -101 dBm sensitivity for 1% packet error rate. The transmitter topology is based on a PLL direct-modulation scheme. Optimizations of architecture and circuit design level in order to reduce the transceiver power consumption are described. Special attention is paid to the RF front-end design which consumes 2.4mA in receive mode and features bidirectional RF pins. The 5.77 mm² chip is implemented in a standard 0.18-mum CMOS technology. The transmitter delivers +3 dBm into the 100-Omega differential antenna port     

A 434/868 MHz CMOS low-IF receiver with I/Q imbalance calibration for SRDs application

A receiver for SRDs implemented by the 0.35μm CMOS process is presented. The receiver, together with the ADC, power amplifier (PA), frequency synthesizer and digital baseband has been integrated into a single chip solution. Low cost and low power requirements are met by optimizing the receiver architecture and circuit topology. A simple mixed-signal mode I/Q imbalance calibration circuit is proposed to enhance the IRR (image rejection ratio) so as to raise the BER. From a single 3 V power supply, the receiver consumes 5.9 mA. The measurement result shows that the receiver achieves reference sensitivity of--60 dBm and a control gain of 60 dB. The S<,11> reaches-20 dB at 433 MHz and-10 dB at 868 MHz without off-chip impedance match network. The die area is only 2 mm2 including the bias circuit.     

A single-chip 900-MHz spread-spectrum wireless transceiver in1-μm CMOS. II. Receiver design

For pt. I see ibid., vol. 33, no. 4, April 1998. A 900-MHz direct-conversion receiver to detect a frequency-hopped carrier with frequency shift keying (FSK) modulation at 160 kb/s is integrated on the same chip as the transmitter. The receiver combines a low-noise amplifier with downconversion mixers and low-pass channel-select filters in quadrature channels. A digital correlating detector makes the data decisions. The received signal is dehopped when it is down-converted. The cascade noise figure is 8.6 dB, and the cascade IIP3 is -8.3 dBm. In active mode, the receiver takes 120 mA from 3 V     

A 2-V CMOS 455-kHz FM/FSK demodulator using feedforward offsetcancellation limiting amplifier

This paper presents a low-voltage low-power IF 455-kHz signal processor that contains a three-stage limiting amplifier and an FM/FSK demodulator. The limiting amplifier uses an on-chip feedforward offset cancellation circuit. The FM/FSK demodulator employs a quadrature detector that is composed of an on-chip phase detector and an external tank phase shifter. The demodulation constant is 20 mV/kHz with masimum ±10-kHz frequency deviation. The IF signal processor that consumes 2.3 mW from a single 2-V power supply demonstrates a high sensitivity of -72 dBm. It occupies an active area of 0.2 mm² using 0.6-μm digital CMOS technology     

A 5.2 GHz CMOS I/Q Modulator With Integrated Phase Shifter for Beamforming

This paper presents the design of an I/Q modulator with integrated phase shifter for beamforming. It is targeted at 802.11a WLAN. An efficient beamforming architecture with a linearly controlled 360^deg phase shifting range is proposed for linear transmitters. The phase shifting takes place in the local oscillator path at three times lower frequency than the carrier. The phase shifters are implemented as vector modulators in an efficient way by utilizing a current reuse technique. All control currents are provided by a single current steering digital to analog converter by means of time multiplexed sample and hold circuits. The circuit, implemented in 0.25 mum CMOS technology, has a 1 dB output compression point of -7.1 dBm and consumes 61 mA. It has a phase shifting resolution of 10^deg with a differential accuracy of 2^deg.     

A 900 MHz Zero‐IF RF Transceiver for IEEE 802.15.4g SUN OFDM Systems

This paper presents a 900 MHz zero‐IF RF transceiver for IEEE 802.15.4g Smart Utility Networks OFDM systems. The proposed RF transceiver comprises an RF front end, a Tx baseband analog circuit, an Rx baseband analog circuit, and a ΔΣ fractional‐N frequency synthesizer. In the RF front end, re‐use of a matching network reduces the chip size of the RF transceiver. Since a T/Rx switch is implemented only at the input of the low‐noise amplifier, the driver amplifier can deliver its output power to an antenna without any signal loss; thus, leading to a low dc power consumption. The proposed current‐driven passive mixer in Rx and voltage‐mode passive mixer in Tx can mitigate the IQ crosstalk problem, while maintaining 50% duty‐cycle in local oscillator clocks. The overall Rx‐baseband circuits can provide a voltage gain of 70 dB with a 1 dB gain control step. The proposed RF transceiver is implemented in a 0.18 μm CMOS technology and consumes 37 mA in Tx mode and 38 mA in Rx mode from a 1.8 V supply voltage. The fabricated chip shows a Tx average power of ?2 dBm, a sensitivity level of ?103 dBm at 100 Kbps with , an Rx input P_1dB of ?11 dBm, and an Rx input IP3 of ?2.3 dBm.     

A 1.7 Gb/s ASK and a 622 Mb/s incoherent FSK transmissionexperiment using a 1.55-μm multiquantum well distributed feedbacklaser

A multiple-quantum-well distributed-feedback (MQW-DFB) laser with narrow linewidth and low frequency chirp at low output power may experience linewidth rebroadening at high output power. the rebroadening is mostly due to a large carrier-induced change of refractive index, which also causes a large frequency modulation response for the MQW-DFB lasers. Using a 1.55-μm MQW-DFB laser, a 622-Mb/s amplitude-shift-keying (ASK) transmission experiment employing 200-km of fiber and an erbium-doped fiber amplifier has been demonstrated having a dispersion power penalty less than 9.8 dB. The receiver sensitivities at BER=10^-9 of the ASK system are -34.5 dBm and -42.5 dBm for 1.7-Gb/s and 622-Mb/s modulation, respectively. A 622-Mb/s incoherent frequency-shift-keying (FSK) transmission experiment using the same laser has also achieved a receiver sensitivity of -42.5 dBm     

A Quad-Band GSM/EDGE-Compliant SiGe-Bipolar Power Amplifier

A standard-compliant integrated quad-band GSM/EDGE radio frequency power amplifier for 824–915 MHz and 1710–1910 MHz has been realized in a 0.35-$mu{hbox{m}}$ SiGe-Bipolar technology. The chip integrates two single-ended three-stage power amplifiers and control circuitry for band-select, power loop control and mode dependent quiescent currents. For power control, an on-chip voltage regulation loop is implemented, using an external P-channel MOS-transistor on a laminate module. At 3.3 V a saturated output power of 35.9 dBm is achieved at 830 MHz and 32.3 dBm at 1710 MHz. The respective peak power added efficiency (PAE) is 56% for low-band and 44% for high-band.