Analysis of metal-ferrite interface layers in metal-in-gap heads

A metal-in-gap head structure in which the metal/ferrite interface is perfectly parallel to the main gap face was adopted for mass-production. An analysis of a pseudo-gap formed at the metal-ferrite interface by using sputter-assisted Auger electron spectroscopy is reported. In the case of a Sendust MIG head, it is confirmed that the pseudo-gap is a reacted layer at the metal-ferrite interface, which consists of Al₂O₃+SiO₂. The reaction mechanism is examined in the case of Sendust/MnZn-ferrite and a soft magnetic alloy, called Sofmax, and suitable barrier materials and thickness ranges. It is found that the reacted layer is reduced drastically by using a SiO₂ or SiN₂O 5-10 nm thick ultrathin barrier layer and Sofmax alloy film instead of Sendust. The ripple of a parallel-type metal-in-gap heads is found to be 0.5 dB or less     

脱合金制备纳米多孔Co及其超级电容器和对偶氮染料的降解性能

在0.5%(质量分数,下同)NH₄F和1 mol/L (NH₄)₂SO₄混合溶液中进行电化学脱合金Zr₅₆Al₁₆Co₂₈非晶合金,制备出纳米多孔Co。这种纳米多孔Co具有良好的超级电容器性能,其比电容在2 A/g的电流密度下能达318 F/g;同时,纳米多孔Co在方波电位下对直接蓝6和酸性橙II等偶氮染料具有优异的降解能力,降解效率均高于96%,其单位质量纳米多孔Co电极材料的降解能力是等质量Zr₅₆Al₁₆Co₂₈非晶合金的3.5倍。     

Catalytic CVD growth of Si–C and Si–C–O alloy films by using alkylsilane and related compounds

Cat-CVD method has been applied to the growth of Si–C and Si–C–O alloy thin films. Growth mechanism has been studied with emphasis on the effects of filament materials. Growth rates and alloy compositions were measured for W, Ta, Mo and Pt filaments at the filament temperatures ranging from 1300 to 2000 °C. Si_1−xC_x films with x ranging from 0.38 to 0.7 could be grown by using single molecule source Si(CH₃)₂H₂ (dimethylsilane). Si–C–O ternary alloy films was successfully prepared by using Si(OC₂H₅)₄ (tetraethoxysilane) and Si(CH₃)₂(OCH₃)₂ (dimethyldimethoxysilane) molecules.     

Magnetic properties of melt spun NdFe10Cr2-Nd0.67B0.33 pseudobinary alloys

The coercivity of the melt-spun pseudobinary (NdFe₁₀Cr ₂)_1-x (Nd₂B)_x alloys, in which Nd₂B represents a composition of Nd_0.67B_0.33, was systematically studied. It was found that significant coercivities are possible with optimal additions of the Nd-B composition at x=0.5-0.7. The as-spun (substrate velocity=10 m/s) coercivity increased from 0.1 kOe at x=0.0 to maxima of 7.0 and 7.5 kOe at x=0.5 and 0.7, due to the Nd₂ Fe₁₄B and a new Fe-Nd phase, respectively, as evidenced from thermomagnetic analysis and X-ray diffraction. Annealing the overquenched amorphous x=0.7 alloy led to the crystallization of the Nd₂Fe₁₄B phase, and a coercivity of 8.5 kOe was obtained     

液硅渗透法制备SiBC改性C/CSiC复合材料

为了降低液硅渗透法制备C/C-SiC复合材料中残留Si的含量, 采用浆料浸渗结合液硅渗透工艺制备B₁₂(C, Si, B)₃改性C/C-SiC复合材料。通过分析不同比例B₄C-Si体系在不同温度的反应产物, 确定了B₁₂(C, Si, B)₃的生成条件。结果表明: B₄C和Si在1300℃开始反应, 生成少量B₁₂(C, Si, B)₃和SiC, 且B₁₂(C, Si, B)₃的生成量随反应温度的升高而增加; 当B₄C和Si的摩尔比为3:1、 反应温度为1500℃ 时, 产物为B₁₂(C, Si, B)₃和SiC; 液硅渗透法制备的C/C-SiC复合材料相组成为非晶态C、 β-SiC和B₁₂(C, Si, B)₃, 未见残留Si。     

Magneto-impedance element

The magneto-impedance (MI) effect is a phenomenon in which the voltage induced by a high frequency current source in a ferromagnetic wire changes with the application of an external field. A giant MI effect was found in amorphous magnetic wires having a composition of (Fe _0.06Co_0.94)_72.5Si_12.5B ₁₅ and a magnetostriction of (-10^-7). The amplitude of the wire voltage decreased by 40% at 1 MHz, 60% (600 kHz) and 50% (150 kHz), for wires having diameters 30 μm, 50 μm and 124 μm, respectively, under the influence of an external longitudinal field of about 10 Oe (800 A/m). A highly sensitive and quick-response field sensor was constructed using a 200 MHz resonant multivibrator bridge-circuit combining two MI-effect elements of 1 mm length with two field effect transistors (FET). Highly sensitive flux detection was carried out by using the small MI sensor head on a rotary encoder magnet having 512 poles and a diameter of 30 mm. Discussion of a mechanism for the MI effect considers the skin effect in an amorphous wire with high circumferential anisotropy     

粉末冶金(FeNiMnAl_(x))_(50)Cu_(50)中熵合金的微观组织与力学性能EI北大核心CSCD

对物理法制备的再生铜合金粉末进一步合金化,通过机械合金化(MA)结合放电等离子烧结(SPS)的方法制备了(Fe_(40)Ni_(40)Mn_(20))_(50)Cu_(50),(Fe_(38)Ni_(38)Ni_(38)Mn_(19)Al_(5))_(50)Cu_(50),(Fe_(36)Ni_(36)Mn_(18)Al_(10))50 Cu_(50)和(Fe_(32)Ni_(32)Mn_(16)Al_(20))_(50)Cu_(50)四种中熵合金块体,并研究了Al元素的含量对中熵合金微观组织与力学性能的影响。结果表明:在高能球磨60 h之后合金粉末完成合金化,四种中熵合金粉末均形成单一FCC相的过饱和固溶体且有微量WC杂质。经SPS烧结后,(Fe_(40)Ni_(40)Mn_(20))_(50)Cu_(50),(Fe_(38)Ni_(38)Mn_(19)Al_(5))_(50)Cu_(50)和(Fe_(36)Ni_(36)Mn_(18)Al_(10))50 Cu_(50)形成了由富Cu的FCC1相和富Fe-Ni的FCC2相组成的双相FCC结构,并具有超细晶+微米晶的多尺度结构;而(Fe_(32)Ni_(32)Mn_(16)Al_(20))_(50)Cu_(50)由富Cu的FCC主相和少量富Fe-Mn的FCC2相及富Ni-Al的BCC相(B2)组成。随着Al含量的提高,四种中熵合金的塑性逐渐降低,而强度和硬度逐渐提高。(Fe_(40)Ni_(40)Mn_(20))_(50)Cu_(50)合金的压缩屈服强度、抗压强度和维氏硬度分别为878 MPa,1257 MPa和248.5HV。与(Fe_(40)Ni_(40)Mn_(20))_(50)Cu_(50)相比,(Fe_(32)Ni_(32)Mn_(16)Al_(20))_(50)Cu_(50)的压缩屈服强度和硬度分别提高了50.1%和50.4%,断裂应变由19.55%下降至8.31%。     

Effect of preparation conditions on properties of atomic layer deposited TiO2 films in Mo–TiO2–Al stacks

TiO₂ films were grown by atomic layer deposition on Mo electrodes in order to elucidate the dominating conductance mechanism and its dependence on the growth chemistry. TiCl₄ and Ti(OC₂H₅)₄ served as titanium precursors, and H₂O or H₂O₂ as oxygen precursors. The films grown at lower temperatures were amorphous. With increasing growth temperatures the crystallization first started in the TiCl₄–H₂O process. The films grown in this process were clearly leakier compared to the films grown from Ti(OC₂H₅)₄ and H₂O and from Ti(OC₂H₅)₄ and H₂O₂. In the Ti(OC₂H₅)₄-based processes, the application of H₂O₂ instead of H₂O resulted in the films with considerably lowered conductivity, although structural differences in these films were insignificant. Space–charge-limited currents were prevailing in all our amorphous Mo–TiO₂–Al packages. Measurements at different temperatures suggested quite high trap densities likely due to the presence of impurities and structural disorder, while the strong differences in conductivity seemed to be due to different densities of gap states.     

苯胺-SrTi(C2O4)2颗粒制备及其电流变性能

用沉淀法制备了苯胺-草酸氧钛锶（SrTi（C₂O₄）₂）颗粒。FTIR分析表明,苯胺已引入到SrTi（C₂O₄）₂颗粒的表面;XRD分析表明,苯胺-SrTi（C₂O₄）₂颗粒为含少量结晶的无定形态。采用SEM观察颗粒的形貌,结果表明,随反应体系中苯胺与钛原子物质的量比n_aniline/n_Ti的增大,苯胺-SrTi（C₂O₄）₂颗粒由近似球状（n_aniline/n_Ti =0）变为多面体状（n_aniline/n_Ti =2）,而后变为棒状与团簇状颗粒的混合体系（n_aniline/n_Ti =3）。以苯胺-SrTi（C₂O₄）₂颗粒为分散相制备颗粒质量分数为66.7%电流变液,电流变性能测试结果表明,在n_aniline/n_Ti =2时,电流变液具有较高的剪切应力和剪切屈服强度、较大的漏电流密度。苯胺在颗粒制备过程中起控制颗粒形貌的作用,在电流变液体系中起极性分子的作用,其对苯胺-SrTi（C₂O₄）₂电流变液性能的影响是两种效应综合作用的结果。     

Zr-Cu-Ni非晶钎料真空钎焊TiAl合金/316L不锈钢接头的界面组织与剪切性能

采用自主设计制备的Zr-42.9Cu-21.4Ni非晶钎料对TiAl合金和316L不锈钢进行真空钎焊,研究钎焊温度和钎焊时间对TiAl合金/316L不锈钢异种金属接头微观组织和剪切性能的影响。结果表明：钎缝界面可以划分为6个不同的反应层。1040 ℃/10 min下制备的钎焊接头从TiAl合金到316L不锈钢侧界面组织依次为γ(TiAl)+AlCuTi/α₂(Ti₃Al)+AlCuTi/AlCu+ZrCuNi+FeZr/Cu₈Zr₃+ZrCuNi+TiFe+Fe₂Zr/FeZr+Fe₂Zr+TiFe₂+ZrCu/α-(Fe, Cr)。随着钎焊温度的升高,接头的抗剪强度先升高后降低。当钎焊温度为1040 ℃和钎焊时间25 min时,接头抗剪强度达到最大值162 MPa。断口分析表明,接头在FeZr+Fe₂Zr+TiFe₂+ZrCu界面处萌生,沿着Cu₈Zr₃+ZrCuNi+TiFe+Fe₂Zr和α-(Fe, Cr)扩展,呈解理断裂。     

Biocorrosion resistance of coated magnesium alloy by microarc oxidation in electrolyte containing zirconium and calcium salts

The key to use magnesium alloys as suitable biodegradable implants is how to adjust their degradation rates. We report a strategy to prepare biocompatible ceramic coating with improved biocorrosion resistance property on AZ91D alloy by microarc oxidation （MAO） in a silicate-K2ZrF6 solution with and without Ca（H2PO4）2 additives. The microstructure and biocorrosion of coatings were characterized by XRD and SEM, as well as electrochemical and immersion tests in simulated body fluid （SBF）. The results show that the coatings are mainly composed of MgO, Mg2SiO4, m-ZrO2 phases, further Ca containing compounds involve the coating by Ca（H2PO4）2 addition in the silicate-K2ZrF6 solution. The corrosion resistance of coated AZ91D alloy is significantly improved compared with the bare one. After immersing in SBF for 28 d, the Si-Zr5-CaO coating indicates a best corrosion resistance performance.     

Self-catalytic degradation of iron-bearing chemical conversion coating on magnesium alloys ---- Influence of Fe content

A number of industrial and biomedical fields, such as hydraulic fracturing balls for gas and petroleum exploitation and implant materials, require Mg alloys with rapid dissolution. An iron-bearing phosphate chemical conversion (PCC) coating with self-catalytic degradation function was fabricated on the Mg alloy AZ31. Surface morphologies, chemical compositions and degradation behaviors of the PCC coating were investigated through FE-SEM, XPS, XRD, FTIR, electrochemical and hydrogen evolution tests. Results indicated that the PCC coating was characterized by iron, its phosphates and hydroxides, amorphous Mg(OH)₂ and Mg_3−n(H_nPO₄)₂. The self-catalytic degradation effects were predominately concerned with the Fe concentration, chemical composition and microstructure of the PCC coating, which were ascribed to the galvanic corrosion between Fe in the PCC coating and the Mg substrate. The coating with higher Fe content and porous microstructure exhibited a higher degradation rate than that of the AZ31 substrate, while the coating with a trace of Fe and compact surface disclosed a slightly enhanced corrosion resistance for the AZ31 substrate.     

AZ31镁合金微弧氧化陶瓷层表面Mg(OH)2膜层的制备及耐蚀性

采用不同浓度的NaOH溶液对AZ31镁合金微弧氧化(Micro-arc oxidation, MAO)陶瓷层进行水热处理, 研究了水热溶液浓度对MAO陶瓷层组织结构及耐蚀性能的影响, 探讨了水热成膜及膜层的腐蚀机理。研究结果表明：水热处理过程中MAO陶瓷层表面的MgO部分溶解, 释放出的Mg ²⁺与水热溶液中的OH ^-结合形成Mg(OH)₂纳米片沉淀在陶瓷层表面及孔洞内。随着水热溶液中NaOH浓度的增加, 水热处理过程中形成的Mg(OH)₂将MAO陶瓷层表面的孔洞及裂纹等固有缺陷闭合, 提高了膜层的致密性。电化学实验结果表明, MAO及水热复合处理所制备的Mg(OH)₂/MAO复合膜层比单一MAO陶瓷层具有更好的耐蚀性, 而且随着NaOH浓度的提高, Mg(OH)₂/MAO复合膜层的耐蚀性增强; 浸泡实验结果表明Mg(OH)₂/MAO复合膜层能为镁合金基体提供长久的腐蚀防护保护能力。     

Microstructure and steady state creep in Ti-24Al-11Nb

The steady state creep behaviour of the two-phase Ti₃Al-based alloy, Ti-24Al-11Nb, has been examined as a function of microstructure at temperatures ranging from 798 to 998 K and stress levels ranging from 30 to 400 MPa. Three microstructural conditions corresponding to 90% equiaxed ₂, 40% equiaxed ₂, and 100% lath ₂ structures have been studied. A low-stress Coble creep regime has been identified, with the lath ₂ structure showing the greates creep resistance in this regime. The lath ₂ structure is also stronger in the dislocation creep regime. The creep strength of this ordered alloy is shown to derive from frequency factors for diffusion, which are about two to three orders of magnitude lower than those for disordered alloys. Activation energies for creep in both the diffusional and dislocation creep domains are similar to values obtained in disordered alloys.     

Microstructure evolution during annealing of an amorphous TiAl sheet

An amorphous, 150 μm thick freestanding sheet of a TiAl-based alloy was produced by physical vapor deposition (PVD). The following phase transformations were observed after different stages of crystallization of the amorphous sheet and analyzed using differential thermal analysis, X-ray diffraction, and transmission electron microscopy: amorphous→body centered cubic (β)→hexagonal close-packed ()?→tetragonal (γ)+ordered ₂. The β phase was formed as near-spherical particles that were evenly distributed in the amorphous phase and the size of these particles was approximately 90 nm. Formation of the phase by decomposition of β and the remaining amorphous phases led to a very fine feathery-like microstructure arranged in colonies of approximately 100 nm in size. Interface boundaries between the phase particles were poorly defined. The transformation of the metastable phase into a mixture of the γ and ₂ phases led to formation of an equiaxed γ-grain structure with the grain size of approximately 150 nm.     

Effect of aluminium content on the anodic behaviour of copper-aluminium alloys in 3.5 wt% NaCl solution

Anodic behaviour of heterogeneous Cu-Al alloys in 3.5 wt% NaCl solution has been investigated as a function of aluminium content by potentiodynamic polarization, cyclic voltammetry and potentiostatic current transient experiments and compared to pure Cu and homogeneous Cu-Al alloys. The specimens were subjected to various anodic potentials and subsequent analyses by scanning electron microscopy (SEM) supplemented with energy dispersion spectroscopy (EDS). The pure Cu and single -phase Cu-Al alloys showed that a relatively thick protective CuCl film forms at active-passive transition potentials and transforms into CuO or Cu(OH)₂ at the passivation potential, resulting in high limiting current densities. However, the Cu-10 wt% Al alloy is passivated to Al(OH)₃, impeding the transformation of the thick CuCl layer which contains AlCl or Al(OH)₂Cl salt into CuO or Cu(OH)₂. At high applied anodic potential, the Cu₂(OH)₃Cl phase forms on the deteriorated passive film Al(OH)₃.     

Thermo-mechanical stability of forged Ti-25Al-11Nb (at.%)

Dynamic material modeling (DMM) has been applied to the analysis of the mechanical behavior of a (Widmanstätten + primary ₂ + β) Ti-25Al-11Nb alloy to establish the flow stress-strain rate-temperature-strain criteria for stable flow.

Unstable and stable flow regimes predicted by DMM were correlated to microstructural observations. Unstable flow zones were related to transformation of orthorhombic O → ₂, kinking of the ₂ lamellae, shear band formation and coarsening of the dynamically recrystallized grain structure; stable flow regimes were shown to be associated with dissolution of the Widmanstätten ₂, coarsening of primary ₂ and dynamic spheroidization of the lamellar ₂ microconstituents.     

多技术联用鉴别含铅固体废物

采用X射线荧光光谱、X射线衍射等技术,结合超景深显微镜、扫描电镜等设备,对某含铅样品进行化学成分、物相组成和微观形貌分析,判断是否为固体废物.结果表明:样品主成分为Pb3(CO3)2(OH)2,PbSO4和Na2SO4等,并且含有大量玻璃态的钠钙铝硅酸盐和呈球状、椭球状、串珠状的金属铅和铅铁氧化物.样品中的硫酸铅呈疏松...     

Characterization of Cat-CVD grown Si–C and Si–C–O dielectric films for ULSI applications

Si–C films with the Si compositions ranging from 40 to 70% have been grown by Cat-CVD using dimethylsilane [DMSi, Si(CH₃)₂H₂] compounds. Tetraethoxysilane [TEOS, Si(OC₂H₅)₄] and dimethyldimethoxysilane [DMDMOS, Si(CH₃)₂(OCH₃)₂] gas source gave us Si–C–O (C-doped SiO_x) films with wide ternary alloy compositions. The dielectric constant of a Si–C film has been evaluated by C–V measurements (at 1 MHz) using Al/Si–C/n-Si(001)/Cu MIS structure. The relative dielectric constant value of a Si–C film was estimated to be 3.0. The resistivity of the Si–C layer with 1 mm diameter and 0.24 μm thickness was estimated to be more than 24.5 Gohm·cm. These results gave us promising characteristics of Si–C and Si–C–O films grown by alkylsilane- and alcoxysilane-based Cat-CVD.     

Improved electrochemical performance of amorphous MnO2 modified by a novel supermolecular compound

A novel modification treatment to improve the electrochemical performance of amorphous, nano-sized MnO₂ is proposed in this paper. An “in situ polymerization reaction” method was employed to obtain the MPz(dtn)₄ or PMPzS₈–MnO₂ composition material. TG, IR, XRD and TEM methods were adopted for material characterization. The experimental results reveal that the amorphous nature and small particle size (10–20 nm) of the parent MnO₂ material can be preserved after MPz(dtn)₄ or PMPzS₈ modification treatment. Galvanostatic charge and discharge was carried out to test the electrochemical property of the resulting material. It indicates that all modified products show an improved electrochemical performance comparing with their parent MnO₂ phase as being reflected by the higher capacity and enhanced cycle life. To investigate the mechanism for improved electrochemical performance, ac impedance technique was employed. Preliminary results suggest that the capacity and the cycleability of the composition material are improved in some degree which may be ascribed to the increasing of intercalation/deintercalation from inter-granular modified compounds.