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Characterization of Cat-CVD grown Si–C and Si–C–O dielectric films for ULSI applications |
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| Authors: | K Takatsuji M Kawakami Y Makita K Murakami H Nakayama Y Miura N Shimoyama H Machida |
| Affiliation: | a Department of Applied Physics, Graduate School of Engineering, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi, Osaka, 558-8585, Japan b Department of Applied Chemistry, Graduate School of Engineering, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi, Osaka, 558-8585, Japan c TRI Chemical Laboratories Inc., 8154-217 Uenohara-machi, Kitatsurugun, Yamanashi 409-0112, Japan |
| Abstract: | Si–C films with the Si compositions ranging from 40 to 70% have been grown by Cat-CVD using dimethylsilane DMSi, Si(CH3)2H2] compounds. Tetraethoxysilane TEOS, Si(OC2H5)4] and dimethyldimethoxysilane DMDMOS, Si(CH3)2(OCH3)2] gas source gave us Si–C–O (C-doped SiOx) films with wide ternary alloy compositions. The dielectric constant of a Si–C film has been evaluated by C–V measurements (at 1 MHz) using Al/Si–C/n-Si(001)/Cu MIS structure. The relative dielectric constant value of a Si–C film was estimated to be 3.0. The resistivity of the Si–C layer with 1 mm diameter and 0.24 μm thickness was estimated to be more than 24.5 Gohm·cm. These results gave us promising characteristics of Si–C and Si–C–O films grown by alkylsilane- and alcoxysilane-based Cat-CVD. |
| Keywords: | Cat-CVD SiOC TEOS Multiplayer interconnection |
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