共查询到19条相似文献,搜索用时 125 毫秒
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通过理论分析与计算机模拟 ,给出了以提高跨导为目标的 Si/ Si Ge PMOSFET优化设计方法 ,包括栅材料的选择、沟道层中 Ge组分及其分布曲线的确定、栅氧化层及 Si盖帽层厚度的优化和阈值电压的调节 ,基于此已研制出 Si/ Si Ge PMOSFET器件样品 .测试结果表明 ,当沟道长度为 2μm时 ,Si/ Si Ge PMOS器件的跨导为 45 m S/ mm(30 0 K)和 92 m S/ mm (77K) ,而相同结构的全硅器件跨导则为 33m S/ mm (30 0 K)和 39m S/ m m (77K) . 相似文献
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低温制备应变硅沟道MOSFET栅介质研究 总被引:1,自引:0,他引:1
分别对300 °C下采用等离子体增强化学气相淀积(PECVD)和700 °C下采用热氧化技术制备应变硅沟道MOS器件栅介质薄膜进行了研究.采用PECVD制备SiO2栅介质技术研制的应变硅沟道PMOSFET(W/L=20 μm/2 μm)跨导可达45 mS/mm(300 K), 阈值电压为1.2 V;在700 °C下采用干湿氧结合,制得电学性能良好的栅介质薄膜,并应用于应变硅沟道PMOSFET(W/L=52 μm/4.5 μm)器件研制,其跨导达到20mS/mm(300 K),阈值电压为0.4 V. 相似文献
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Yang Peifeng Li Jingchun Yu Qi Wang Xiangzhan Yang Mohua 《电子科学学刊(英文版)》2002,19(1):108-112
Based on theoretical analysis and computer-aided simulation, optimized design prin-ciples for Si/SiGe PMOSFET are given in this paper, which include choice of gate materials, determination of germanium percentage and profile in SiGe channel, optimization of thickness of dioxide and silicon cap layer, and adjustment of threshold voltage.In the light of these principles, a SiGe PMOSFET is designed and fabricated successfully.Measurement indicates that the SiGe PMOSFET‘s(L=2μ同洒45 mS/mm(300K) and 92 mS/mm(77K) ,while that is 33mS/mm (300K) and 39mS/mm (77K) in Si PMOSFET with the same structure. 相似文献
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报道了第一支0.25um栅长n型Si/SiGe调制掺杂场效应晶体管的制作和器件特性结果,器件用于超高真空/化学汽相淀积(UHV/CVD)制作的器件,在300K(77K)下,应变Si沟道的迁移率和电子薄层载流子的深度为1500(9500)cm2/V.s和2.5×10^12(1.5*10^10)cm^-2,器件电流和跨导分别为325mA/mm和600mS/mm,这些值远优于Si MESFET,它们可与所获得的GaAs/Al-GaAs调制掺杂晶体管的结果相媲美。 相似文献
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制备了耗尽型和增强型TEGFET,耗尽TEGFE单栅长1μm,其室温跨导g_m=90mS/mm;双栅栅长均为2μm。g_m=75mS/mm。双栅的结果优于本实验室相同结构与尺寸的离子注入型常规双栅MESFET与高掺杂沟道MIS结构肖特基势垒FET的实验结果。双栅耗尽型器件在77K下跨导增加到1.7倍。双栅增强型的TEGFET在室温0.6V栅偏压下,g_m=63mS/mm,在77K下增加到1.4倍。如器件中出现平行电导时,则器件性能退化,它不但使跨导降低,且随栅编压变化很大。文中讨论了这一现象。 相似文献
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一种适合制作CMOS的SiGePMOSFET 总被引:1,自引:1,他引:0
在通常适合于制作埋沟 Si Ge NMOSFET的 Si/弛豫 Si Ge/应变 Si/弛豫 Si Ge缓冲层 /渐变 Ge组分层的结构上 ,制作成功了 Si Ge PMOSFET.这种 Si Ge PMOSFET将更容易与 Si Ge NMOSFET集成 ,用于实现 Si Ge CMOS.实验测得这种结构的 Si Ge PMOSFET在栅压为 3.5 V时最大饱和跨导比用作对照的 Si PMOS提高约 2倍 ,而与常规的应变 Si Ge沟道的器件相当 相似文献
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High-mobility strained-Si PMOSFET's 总被引:1,自引:0,他引:1
Nayak D.K. Goto K. Yutani A. Murota J. Shiraki Y. 《Electron Devices, IEEE Transactions on》1996,43(10):1709-1716
Operation and fabrication of a new high channel mobility strained-Si PMOSFET are presented. The growth of high-quality strained Si layer on completely relaxed, step-graded, SiGe buffer layer is demonstrated by gas source MBE. The strained-Si layer is characterized by double crystal X-ray diffraction, photoluminescence, and transmission electron microscopy. The operation of a PMOSFET is shown by device simulation and experiment. The high-mobility strained-Si PMOSFET is fabricated on strained-Si, which is grown epitaxially on a completely relaxed step-graded Si0.82Ge0.18 buffer layer on Si(100) substrate. At high vertical fields (high |Vg|), the channel mobility of the strained-Si device is found to be 40% and 200% higher at 300 K and 77 K, respectively, compared to those of the bulk Si device. In the case of the strained-Si device, degradation of channel mobility due to Si/SiO2 interface scattering is found to be more pronounced compared to that of the bulk Si device. Carrier confinement at the type-II strained-Si/SiGe-buffer interface is clearly demonstrated from device transconductance and C-V measurements at 300 K and 77 K 相似文献
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SiGe pMOSFET's with gate oxide fabricated by microwave electroncyclotron resonance plasma processing
Li P.W. Yang E.S. Yang Y.F. Chu J.O. Meyerson B.S. 《Electron Device Letters, IEEE》1994,15(10):402-405
A new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate-quality oxide directly on SiGe alloys. One μm Al gate Si0.86Ge0.15 p-metal-oxide-semiconductor field-effect-transistors (pMOSFET's) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm2/V-s at 300 K and 530 cm 2/V-s at 77 K have been obtained 相似文献
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Ismail K. Meyerson B.S. Rishton S. Chu J. Nelson S. Nocera J. 《Electron Device Letters, IEEE》1992,13(5):229-231
The authors report on the fabrication and the resultant device characteristics of the first 0.25-μm gate-length field-effect transistor based on n-type modulation-doped Si/SiGe. Prepared using ultrahigh vacuum/chemical vapor deposition (UHV/CVD), the mobility and electron sheet charge density in the strained Si channel are 1500 (9500) cm2/V-s and 2.5×1012 (1.5×1012 ) cm-2 at 300 K (77 K). At 77 K, the devices have a current and transconductance of 325 mA/mm and 600 mS/mm, respectively. These values far exceed those found in Si MESFETs and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors 相似文献
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Cirillo N.C. Fraasch A. Lee H. Eastman L.F. Shur M.S. Baier S. 《Electronics letters》1984,20(21):854-855
The fabrication of self-aligned gate by ion implantation modulation doped (Al,Ga)As/GaAs field effect transistors (MODFETs) utilising a novel multilayer structure capable of withstanding the high-temperature furnace anneals required for Si implant activation is reported. Typical measured extrinsic transconductances of 175 mS/mm at 300 K and 290 mS/mm at 77 K were achieved on 1.1 ?m-gate-length devices. Values of the two-dimensional electron gas saturation velocity of 1.9×107 cm/s at 300 K and 2.7×107 cm/s at 77 K were obtained from an analysis of the FET drain current/voltage characteristics using the charge-control model. 相似文献
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Ismail K. Rishton S. Chu J.O. Chan K. Meyerson B.S. 《Electron Device Letters, IEEE》1993,14(7):348-350
Enhancement-mode Si/SiGe n-type modulation-doped transistors with a 0.5-μm-length T-gate have been fabricated. Peak transconductances of 390 mS/mm at room temperature and 520 mS/mm at 77 K have been achieved. These high values are attributable to a combination of the high quality of the material used, having a room temperature mobility of 2600 cm2/V-s at an electron sheet concentration of 1.5×1012 cm2, and an optimized layer design that minimizes the parasitic series resistance and the gate-to-channel distance 相似文献
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Arafa M. Fay P. Ismail K. Chu J.O. Meyerson B.S. Adesida I. 《Electron Device Letters, IEEE》1996,17(3):124-126
We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (fT) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (gm) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K 相似文献
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Si/SiGe P-channel Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) using P^+ (phosphor ion) implantation technology is successfully fabricated. P^+ implantation into SiGe virtual substrate induces a narrow defect region slightly below the SiGe/Si interface, which gives rise to strongly enhanced strain relaxation of SiGe virtual substrate. X-Ray Diffraction (XRD) tests show that the degree of relaxation of SiGe layer is 96% while 85% before implantation. After annealed, the sample appeared free of Threading Dislocation densities (TDs) within the SiGe layer to the limit of Transmission Electron Microscopy (TEM) analysis. Atomic Force Microscope (AFM) test of strained Si channel surface shows that Root Mean Square (RMS) is 1.1nm. The Direct Current (DC) characters measured by HP 4155B indicate that the maximum saturated transconductance is twice bigger than that of bulk Si PMOSFET. 相似文献
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Drummond T.J. Su S.L. Lyons W.G. Fischer R. Kopp W. Morko? H. Lee K. Shur M.S. 《Electronics letters》1982,18(24):1057-1058
High-performance normally-off modulation-doped (Al,Ga)As/GaAs field-effect transistors with a 1 ?m gate length were fabricated and characterised. The transconductance obtained was 225 mS/mm at 300 K and 400 mS/mm at 77 K, leading to intrinsic transconductances (zero source resistance) of 305 and 565 mS/mm at 300 and 77 K, respectively. Since the device performance in short-gate transistors is limited by the electron saturation velocity, the increasing transconductance observed as the device is cooled is due to an increase in the electron velocity from about 2×107 cm/s to 3×107 cm/s. These velocities are inferred from a model developed for modulation-doped transistors and are predicted by pulse measurements in similar structures. 相似文献
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为研究深亚微米尺度下应变 Si Ge沟改进 PMOSFET器件性能的有效性 ,运用二维数值模拟程序MEDICI模拟和分析了 0 .1 8μm有效沟长 Si Ge PMOS及 Si PMOS器件特性。Si Ge PMOS垂直方向采用 Si/Si Ge/Si结构 ,横向结构同常规 PMOS,N+ -poly栅结合 P型δ掺杂层获得了合理阈值电压及空穴局域化。研究表明 ,经适当设计的 Si Ge PMOS比对应 Si PMOS的 IDmax、gm、f T均提高 1 0 0 %以上 ,表明深亚微米尺度 Si Ge沟PMOSFET具有很大的性能提高潜力 相似文献