双极模式静电感应晶体管设计要点

在新的阻断状态解析模型基础上,定量讨论了双极模式静电感应晶体管(BSIT)主要结构参数(外延层杂质浓度N_B、漏源间距w、栅区深度r及栅间距2a)与沟道势垒的关系,同时给出了定性解释。还分析了大注入通态特性与结构参数的关系,为BSIT的关态及通态设计提供了理论依据。     

一种新型电子节能灯用晶体管—双极型静电感应晶体管(BSIT)

本文简要叙述了开发和研制BSIT的市场背景和技术现状；对BSIT（BipolarStaticInductionTransistor）器件模型进行了理论分析；对BSIT器件的设计和制作工艺进行了探讨，并分析了BSIT器件的工作原理和特性；介绍了BSIT器件的应用和上灯试用情况。     

双极模式静电感应晶体管特性分析

在新的阻断状态全解析模型基础上,结合已有的理论成果,全面分析了双极模式静电感应晶体管(BSIT)的静态、动态和温度特性,并在分析中更加明确地论证了势垒钉扎等问题,为BSIT的设计提供了理论依据。     

宽温区晶体管研究

通过版图设计,成功地把双极型晶体管(BJT)和双极模式静电感应晶体管(BSIT)有机结合在一起,构成BJT-BSIT组合晶体管。BJT电流增益具有正温度系数,BSIT具有负温度系数,利用这两种相反的温度特性,使BJT-BSIT的温度特性得到了改善。实验和理论都表明采用这种器件结构,是实现晶体管宽温区工作的很好途径。     

双极模式静电感应晶体管及其复合管的原理

静电感应器件通过控制漏和栅的电压来改变沟道中的势垒高度,从而控制来自源区的多数载流子量,并通过静电式控制沟道中的电势分布,来控制电流。本文说明了BSIT单管及大电流高增益复合管的主要工艺过程和工作原理,特别是BSIT由小电流区域变到大电流区域的过程中Ⅰ-Ⅴ曲线的变化及机理。为了更好地了解BSIT的工作原理,针对DX421型BSIT器件作了计算机模拟,最后对其单管和大电流高增益复合管的一些参数如电流放大系数、阻断电压和饱和压降进行了讨论。     

一种抑制单粒子瞬态响应的SiGe HBT工艺加固技术仿真

基于0.13 μm SiGe BiCMOS工艺,开展了无深槽NPN SiGe HBT工艺和器件仿真。模拟了带深P阱SiGe HBT的制备过程、常规电学特性和重离子单粒子效应。该器件与常规器件相比表现出更优的单粒子瞬态(SET)特性,在关态的SET响应峰值下降了80%,在最大特征频率工作点的SET响应峰值下降了27%,瞬态保持时间也大幅减小。使用深N阱和深P阱隔离同时抑制了集电区-衬底结的漂移载流子收集和衬底扩散载流子收集的过程,极大地提高了器件的SET性能。     

一种低功耗高稳态电平位移电路

提出了一种新型低功耗、高稳态电平位移电路。该电路能将5 V输入电压转换为10 V输出电压,在电路的初态和电平转换过程中均保持高稳态。采用瞬态增强结构,能加速电平信号之间的转换,有效地减小了传输延迟,提高了电路稳定性。瞬态增强结构在稳定状态时不发挥作用,减小了静态功耗,获得了低功耗。基于标准0.35 μm BCD工艺和多5 V LDMOS耐压器件,对该电平位移电路在5 MHz频率下进行验证。结果表明,动态功耗仅为24.8 μA,上升沿响应速度仅为12.7 ns,下降沿响应速度仅为22.8 ns。该电路具有可靠性高、功耗低的优点。     

GaN HFET沟道热电子隧穿电流崩塌模型

研究了GaN HFET中沟道热电子隧穿到表面态及表面态电子跃迁到表面导带两种跃迁过程及其激活能.从沟道热电子隧穿过程出发,提出了新的电流崩塌微观模型.用该微观模型解释了光离化谱、DLTS、瞬态电流及电流崩塌等各类实验现象.研究了各种异质结构的不同电流崩塌特性,在此基础上讨论了无电流崩塌器件的优化设计.     

GaN HFET沟道热电子隧穿电流崩塌模型

研究了GaN HFET中沟道热电子隧穿到表面态及表面态电子跃迁到表面导带两种跃迁过程及其激活能.从沟道热电子隧穿过程出发,提出了新的电流崩塌微观模型.用该微观模型解释了光离化谱、DLTS、瞬态电流及电流崩塌等各类实验现象.研究了各种异质结构的不同电流崩塌特性,在此基础上讨论了无电流崩塌器件的优化设计.     

AlGaN/GaN HFET中的陷阱

提出了二维表面态和表面缺陷层构成的AlGaN/GaN HFET中的陷阱模型。自洽求解薛定谔方程和泊松方程得到异质结能带和沟道阱基态、激发态及二维表面态的波函数。发现表面高密度缺陷减薄了势垒层厚度,显著增强了热电子隧穿过程。从缺陷态发射电子和热电子隧穿构成的新陷阱模型出发,解释了HFET的瞬态电流、肖特基势垒的伏安特性和产生-复合噪声。最后讨论了改进材料生长和器件工艺来抑制陷阱效应,改善器件性能的途径。     

Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure

The failure of a bipolar static induction transistor(BSIT) often occurs in the transient process between the conducting-state and the blocking-state,so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices.The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper.The influences of material,structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth.The technological approaches are developed to improve the dynamical characteristics of BSITs.     

埋栅型电力静电感应晶闸管的I-V特性反向转折机理

研究了静电感应晶闸管的反向转折特性．当工作在正向阻断态的阳极电压增大到某一临界值时,静电感应晶闸管的I-V曲线呈现出反向转折特性,甚至转向导通态．在综合考虑了工作机理、双注入效应、空间电荷效应、沟道中的电子一空穴等离子体和载流子寿命变化的基础上分析了静电感应晶闸管的反向转折特性．首次给出了反向转折机理的理论解释,并给出了估算转折电压和电流的数学表达式,在常用工艺参数范围内,计算结果和实验测量值基本一致．     

埋栅型电力静电感应晶闸管的Ⅰ-Ⅴ特性反向转折机理

研究了静电感应晶闸管的反向转折特性.当工作在正向阻断态的阳极电压增大到某一临界值时,静电感应晶闸管的Ⅰ-Ⅴ曲线呈现出反向转折特性,甚至转向导通态.在综合考虑了工作机理、双注入效应、空间电荷效应、沟道中的电子-空穴等离子体和载流子寿命变化的基础上分析了静电感应晶闸管的反向转折特性.首次给出了反向转折机理的理论解释,并给出了估算转折电压和电流的数学表达式,在常用工艺参数范围内,计算结果和实验测量值基本一致.     

Effects of the doping profile on current characteristics in BSITs

Proposed are two doping profiles of the conducting channel in bipolar-mode static induction transistors (BSITs) that improve the current handling capability. By using the results obtained from two-dimensional device simulations, it is shown that BSITs with the proposed profiles exhibit higher drain current density and DC current gain than conventional BSITs. Also discussed is the tradeoff between the current and voltage capabilities     

Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications

This work is addressed to the investigation of the electro-thermal performance of RF-LDMOS transistors integrated in TF-SOI, TF-SOS and thinned TF-SOS substrates by means of numerical simulations. Reported experimental trap density, carrier mobility and capture cross-section values have been used together with sapphire datasheet thermal properties, in order to provide accurate simulation results. It is found that subthreshold characteristics are the same for all the analysed substrates while blocking-state, on-state and power dissipation process depends on the substrate type.     

沟道电势分布对静电感应晶闸管瞬态特性的影响

本论文从理论和实验上研究了由几何参数与偏置电压决定的沟道电势分布对静电感应晶闸管(SITH)瞬态性能的影响。从理论上推导出了SITH势垒高度和I-V特性的数学表达式。论文深入研究了影响器件在阻断态和导通态瞬态性能的主要因素和机理。研究结果对SITH的设计、制造、性能优化和应用有一定的指导意义。     

Physical effect On transition from blocking to conducting state of barrier-type thyristor

The transition of the barrier-type thyristor(BTH)from blocking to conducting-state occurs between two entirely contrary physical states with great disparity in nature.The physical effects and mechanisms of the transition are studied in depth.The features of the transition snapback point are analyzed in detail.The transition snapback point has duality and is just the position where the barrier is flattened.It has a significant influence on the capture crosssection of the hole and high-level hole lifetime,resulting in the device entering into deep base conductance modulation.The physical nature of the negative differential resistance segment I-V characteristics is studied.It is testified byusmg experimental data that the deep conductance modulation is the basic feature and the linchpin of the transition process.The conditions and physical mechanisms of conductance modulation are investigated.The related physical subjects,including the flattening of the channel barrier,the buildup of the double injection,the formation of the plasma,the realization of the high-level injection,the elimination of the gate junction depletion region,the deep conductance modulation,and the increase in the hole'S lifetime are all discussed in this paper.     

多径衰落非线性动力特征初探

本文应用现场实测数据初步探讨了蜂窝移动通信环境中多径衰落的非线生动力特征，首先通过重构状态空间和分析关联维数验证了多径衰落动力机制具有限维自由度，然后设计了前向BP神经网络来拟合其非线性动力系统，并重构了多径信号。分析和仿真结果表明，与传统的随机模型相比，多径衰落的内在物理机制更多地表现出非线性系统特征。     

Observation of regular pulse train in a narrow-band optoelectronic oscillator

We have experimentally observed a new operating state of a regular pulse train in a narrow-band optoelectronic oscillator (OEO) system, where the direct-current (DC) bias of the Mach-Zehnder modulator is set at the maximum value of the transmission transfer function instead of the usual quadrature point. The observed quasi-steady-state pulse train is distinctly periodic, with a period of 10.5 µs and a center frequency of 10 GHz, and resembles a mode-locked OEO in its waveform. The formation of regular pulses here may arise from the dynamic balance of nonlinearity and narrow-band filter effects, with the transient characteristics of the pulses arising mainly from instabilities between the gain and cavity loss. Our results are of great importance for deepening the understanding of the nonlinear dynamical processes in OEO systems.     

静电感应晶闸管沟道载流子分布的物理效应

The physical effects of the carrier distribution in the channel on the dynamical performance of a static induction thyristor （SITH） have been studied numerically and experimentally. The analytical expressions of the minority carrier distribution in the channel of the SITH were also derived and the space charge distribution control- ling mechanism on the current of the SITH under high level injection have been analyzed deeply. The relationships among the minority carrier distribution, potential distribution, I-V characteristics and transient performances of the SITH are revealed.