具有陷波特性的超宽带分形缝隙天线

结合超宽带缝隙天线和分形结构的优点,设计了一种具有陷波特性的超宽带分形缝隙天线.选择E形缝隙结构,并在缝隙下边缘采用树状分形,构造半波长谐振结构,实现了天线的陷波功能,有效地避免了超宽带频带范围内的系统干扰.给出了天线设计的总体思路,通过理论分析和仿真测试,对天线的阻抗特性、增益进行了研究.结果表明,该陷波天线的阻抗频带为3 GHz ～12 GHz,在5 GHz～6.25 GHz频带内具有陷波特性.同时,分形结构的引入极大地缩小了天线的尺寸.     

一种新型具有陷波特性的宽带单极子天线

设计了一款新型的具有陷波特性的超宽带单极子天线。该天线的带宽为3. 1 ~ 12. 0 GHz,通过在矩 形辐射贴片上制作出对称的梯形结构、中心加载倒C 形缝隙、矩形开槽,并将窄矩形接地板切除两个边角,制作矩形 开槽结构,使得天线在3. 3 ~5. 35 GHz 频段产生陷波特性。该天线结构紧凑,尺寸仅为20 mm×25 mm×1. 0 mm。建 立天线模型,并对其进行仿真和优化。研究表明,天线在WiMAX 频段、C 波段、数字微波通信、大容量微波通信和部 分WLAN 等多个频段产生良好的陷波特性,且在工作频段内有良好的性能和辐射方向特性。     

一种小型的三陷波UWB天线

设计了一种小型三陷波平面超宽带天线,通过在天线的辐射贴片上加载U形缝隙、在接地板上开一对对称的L形缝隙和引入寄生条带,使得天线在3.2～3.6GHz、3.7～4.3GHz和5.3～6GHz频段内实现频率阻断。利用仿真软件研究了U形缝隙、L形缝隙和寄生条带对陷波特性的影响,并对所设计的超宽带天线进行了制作和测量。结果显示,该天线在工作频段2.8～10.6GHz内具有良好的辐射方向特性,能广泛应用于超宽带系统。     

一种五陷波超宽带天线的设计

为了在所需的多个陷波频带中获得额外的谐振频率,设计了一种具有五陷波特性的超宽带单极子天线,天线包括蚀刻了两个不封闭口字型槽的秤砣形贴片、矩形微带馈电线、缺陷接地板和两个类U形谐振器.将两个类U形谐振器耦合在馈电线附近,与辐射贴片上蚀刻的两个槽及缺陷接地板共同实现五陷波特性.该天线工作带宽为3.01～12 GHz,有效滤除了WiMAX通信频段(3.73～3.89 GHz)、C频段卫星通信系统(4.25～4.9 GHz)、无线局域网通信频段(5.51～5.83 GHz)、INSAT(Indian National Satellite System)频段(6.77～7.32 GHz)和ITU 8GHz频段(8.13～8.38 GHz)的干扰,且天线在通带频段内五个陷波特性和方向性结果均吻合良好.     

具有三陷波特性的类Sierpinski分形超宽带天线

为避免窄带通信系统对超宽带(ultra-wideband,UWB)系统的干扰冲突,提出一款具有三陷波特性的类Sierpinski分形UWB天线.辐射贴片采用圆环与五角星形嵌套迭代的2阶类Sierpinski分形结构,并采用缺陷地结构接地板以实现良好的UWB特性.通过在分形结构的上部添加对称倒L形开路枝节,在微带馈线两侧添加对称L形开路枝节,并在馈线处刻蚀倒π形窄缝隙产生了4.5～4.8 GHz、7.2～7.8 GHz和8.0～8.5 GHz三个频段的陷波特性.仿真和实测结果表明,天线在3.1～18.1 GHz的频段内,可有效抑制国际卫星波段、X卫星波段和国际电信联盟波段等窄带系统的干扰.该天线除滤波频段内,在通带频段内有较稳定的增益和全向辐射特性,可用于各种UWB系统中.     

具有三陷波特性的类Sierpinski分形超宽带天线

为避免窄带通信系统对超宽带(ultra-wideband,UWB)系统的干扰冲突,提出一款具有三陷波特性的类Sierpinski分形UWB天线.辐射贴片采用圆环与五角星形嵌套迭代的2阶类Sierpinski分形结构,并采用缺陷地结构接地板以实现良好的UWB特性.通过在分形结构的上部添加对称倒L形开路枝节,在微带馈线两侧添加对称L形开路枝节,并在馈线处刻蚀倒π形窄缝隙产生了4.5～4.8 GHz、7.2～7.8 GHz和8.0～8.5 GHz三个频段的陷波特性.仿真和实测结果表明,天线在3.1～18.1 GHz的频段内,可有效抑制国际卫星波段、X卫星波段和国际电信联盟波段等窄带系统的干扰.该天线除滤波频段内,在通带频段内有较稳定的增益和全向辐射特性,可用于各种UWB系统中.     

新型小尺寸三陷波超宽带天线的设计

设计了一种紧凑的具有三陷波特性的超宽带天线。天线采用渐变微带线馈电,并通过矩形加半圆的辐射单元和半圆形地板来实现超宽带。通过在辐射单元上刻蚀对称的L形槽和圆环形槽,来实现在WLAN/WiMAX的陷波特性;在渐变微带馈线两侧增加对称的C形谐振器来达到在X频段的陷波特性。实验结果表明,天线在2.68~13GHz频段内电压驻波比小于2,同时在3.1~3.8GHz,5~5.9GHz,7.25~7.85GHz频段内有陷波抑制作用,且具有良好的辐射特性。天线具有较小的几何尺寸,仅为20mm×30mm。     

小型化陷波超宽带天线

针对超宽带通信系统（3．1～10．6GHz）与WLAN工作频段（5．15～5．825GHz）之间存在的电磁干扰,本文提出了一种小型化陷波超宽带天线。该天线结构简单,体积较小,陷波特性良好。通过在介质板上侧的金属地板刻蚀C形槽缝可以使天线在5．15～5．825GHz频段实现良好的陷波特性,而且调节C形槽缝的长度可以调节阻带的频段。研究结果表明,该天线的辐射特性良好,能够广泛应用于超宽带通信系统。     

紧凑型多陷波超宽带天线设计与研究

提出了一款紧凑型多陷波特性超宽带天线,该天线由圆形贴片和改进的接地板组成。采用在辐射贴片上开两个圆弧状U形槽和接地板上开一个U形窄缝隙的结构使其具有多陷波特性。天线的体积仅为32 mm′25 mm′1.6 mm,结构紧凑。仿真与测试结果表明:该天线工作带宽为2.8 ~ 16 GHz,实现了3.2~3.8 GHz、4.5~5.5 GHz 和7.2~8.6 GHz 3个频段的陷波特性,有效阻隔了WiMAX(3.3~ 3.6 GHz)、大容量微波通信频段(4.5~5 GHz)、部分WLAN(5.1~5.35 GHz)、X波段(7.25~7.75 GHz)和国际电信联盟(ITU)波段(8.01~8.5 GHz)窄带信号的干扰。除陷波频段外该天线具有良好性能和辐射方向性,更适合应用于超宽带系统。     

具有陷波特性梯形印制单极超宽带天线

设计了带三角形槽梯形辐射元和阶梯接地面的30 mm×30 mm印制单极超宽带天线原型.实验结果表明,原型天线驻波比小于2的阻抗带宽为2.8 GHz～12.81 GHz,频带内天线具有全向辐射特性,增益变化平坦,相位中心稳定.通过对原型天线振子体的缝隙加载,实现了具有带阻特性的陷波超宽带天线,其驻波比大于3的陷波频带为4.8 GHz～6.0 GHz,陷波频带内最高增益抑制为9 dB,而其他频段性能与原型天线基本一致.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.