共查询到19条相似文献,搜索用时 156 毫秒
1.
2.
设计了一种用于SDH系统STM-64(10Gb/s)速率级光接收机中的BiCMOS放大电路,包括NMOS共栅-共源前置放大器和差分式BiCMOS主放大器;各个放大器中都引入了负反馈;并精选了元器件参数,采取了提速措施,以保证放大电路在低功耗下工作在10Gb/s或更高速率上.实验结果表明,所设计的放大电路在10Gb/s速率上,主放大器输入动态范围为42dB(3.2~500mV),50Ω负载电阻上的输出限幅约为250mV,小信号输入时的最高工作速率达到12Gb/s,放大电路可采用1.8~5.6V电源供电,平均功耗约为230mW,从而满足了光纤通信系统中的高性能要求. 相似文献
3.
4.
5.
6.
基于南京电子器件研究所0.5μm GaAs PHEMT工艺,研制了一种高增益级联式光接收机前置放大器.作为前级的跨阻抗放大器的-3dB带宽为10GHz,小信号增益为9dB;作为后级的分布式放大器的-3dB带宽接近20GHz,小信号增益为12dB;级联前置放大器小信号增益达21.3dB,跨阻增益为55.3dBΩ,在输入10Gb/s非归零伪随机二进制序列下,放大器输出眼图清晰、对称、信噪比优于跨阻放大器,分布放大器不能校正的输入波形失真也得到显著改善. 相似文献
7.
基于南京电子器件研究所0.5μm GaAs PHEMT工艺,研制了一种高增益级联式光接收机前置放大器,作为前级的跨阻抗放大器的-3dB带宽为10GHz,小信号增益为9dB; 作为后级的分布式放大器的-3dB带宽接近20GHz,小信号增益为12dB; 级联前置放大器小信号增益达21.3dB,跨阻增益为55.3dBΩ,在输入10Gb/s非归零伪随机二进制序列下,放大器输出眼图清晰、对称、信噪比优于跨阻放大器,分布放大器不能校正的输入波形失真也得到显著改善。 相似文献
8.
9.
采用0.35μm CMOS工艺设计了一种适用于光通信的低功耗前置放大器,芯片最高工作速率可达3.125Gb/s。该前置放大器采用RGC (Regulated Cascode)结构作为输入级,同时引入消直流电路来稳定电路的直流工作点。在片测试结果表明,前置放大器的跨阻增益为54.2dBΩ,-3dB带宽为2.31GHz,平均等效输入噪声电流谱密度为18.8pA/?Hz;输入为2.5Gb/s和3.125Gb/s信号时均可获得清晰眼图;3.3V单电源供电时,功耗仅为58.08mW,其中20mW来自输出缓冲。芯片面积为465μm435μm。 相似文献
10.
随着bit率增加到10Gb/s和更高,喇曼放大器开始挤进掺铒光纤放大器市场。大多数喇曼放大器的设计安排是分布式的,但是现在开始出现独立式的,或者集中式的喇曼放大器。 相似文献
11.
Gnauck A.H. Jopson R.M. Burrus C.A. Wang S.-J. Dutta N.K. 《Photonics Technology Letters, IEEE》1989,1(10):337-339
A 16 Gb/s electrically time-division-multiplexed lightwave link is discussed. The 16 Gb/s electronic signal was generated by multiplexing together eight copies of the 2-Gb/s pseudorandom sequence (length 215-1) produced by a commercial BER test set. A 22-km transmission distance was achieved using a directly modulated, 1.3-μm wavelength DFB laser and a 50-Ω p-i-n receiver. Receiver sensitivity for a BER of 10-9 was -2.0 dBm. The addition of an optical preamplifier required a more sensitive receiver to avoid saturation-induced distortion in the preamplifier. This was accomplished by reducing the 2-Gb/s word length to 24 b, thereby lowering the intersymbol interference penalty and effectively increasing the receiver sensitivity. Under these conditions, the optical preamplifier receiver sensitivity was -19 dBm, and a 64.5-km transmission was demonstrated 相似文献
12.
Optical preamplifier using optical modulation of amplified spontaneous emission in saturated semiconductor optical amplifier 总被引:1,自引:0,他引:1
This paper demonstrates a novel optical preamplifier using optical modulation of amplified spontaneous emission (ASE) emitted from a saturated semiconductor optical amplifier (SOA). Requirements on optical alignments and antireflection coating for SOAs can be relaxed and the elimination of an optical filter gives us a large tolerance of an input light wavelength in the proposed optical preamplifier. A small-signal gain of a fabricated preamplifier was over 13.5 dB for an input power of below -20 dBm. An optical gain bandwidth was over 60 nm. We measured the small-signal response of the optically modulated ASE. The 3 dB bandwidths at SOA bias currents of 200, 300, and 400 mA were 5.8, 12.6, and 16.5 GHz, respectively. We also investigated improvements in receiver sensitivities with the proposed optical preamplifier. Our calculation shows a possibility of 10 dB improvement in receiver sensitivities by using the optical preamplifier at 10 Gb/s. The measured receiver sensitivity was -22.7 dBm at 10 Gb/s with the optical preamplifier, which is corresponding to an improvement of 2.5 dB in the receiver sensitivity. Further improvements of the receiver sensitivity can be expected by optimizing the structure of SOAs for saturating ASE. 相似文献
13.
Suzuki Y. Suzaki T. Ogawa Y. Fujita S. Liu W. Okamoto A. 《Solid-State Circuits, IEEE Journal of》1992,27(10):1342-1346
An optical modulator driver IC and a preamplifier IC for 10 Gb/s optical communication systems are developed using AlGaAs/InGaAs/GaAs pseudomorphic two-dimensional electron gas (2DEG) FETs with a gate length of 0.35 μm. The optical modulator driver IC operates at a data rate up to 10 Gb/s with an output voltage swing of more than 4 Vp-p . The bandwidth for the amplifier IC is 13.0 GHZ with ab 47 dB-Ω transimpedance gain. In addition, optical transmission experiments with external optical modulation using these ICs have successfully been carried out at 10 Gb/s 相似文献
14.
阐述了光纤通信前置放大器的设计原理,分析了光接收机中PIN二极管和GaAsFET器件的信号模型和噪声模型,提取了放大器用GaAsFET器件的模型参数(包括大信号、小信号和噪声模型参数)。利用PSPICE程序对光前置放大器进行了模拟分析和优化设计,并实际制作了用于2.4Gb/s光纤通信的PIN-HEMT前置放大器。实测结果表明放大器3dB带宽达到DC~4.4GHz,增益为18±1dB;加入PIN二极管后的光接收模块的3dB带宽为DC~1.688GHz,满足了2.4Gb/s光纤通信的需要。 相似文献
15.
Suzaki T. Soda M. Morikawa T. Tezuka H. Ogawa C. Fujita S. Takemura H. Tashiro T. 《Solid-State Circuits, IEEE Journal of》1992,27(12):1781-1786
Three Si bipolar ICs, a preamplifier, a gain-controllable amplifier, and a decision circuit, have been developed for 10-Gb/s optical receivers. A dual-feedback configuration with a phase adjustment capacitor makes it possible to increase the preamplifier bandwidth up to 11.2 GHz, while still retaining flat frequency response. The gain-controllable amplifier, which utilizes a current-dividing amplifier stage, has an 11.4-GHz bandwidth with 20-dB gain variation. A master-slave D-type flip-flop is also operated as the decision circuit at 10 Gb/s. On-chip coplanar lines were applied to minimize the electrical reflection between the ICs 相似文献
16.
Soda M. Tezuka H. Sato F. Hashimoto T. Nakamura S. Tatsumi T. Suzaki T. Tashiro T. 《Solid-State Circuits, IEEE Journal of》1994,29(12):1577-1582
Two Si-Analog IC's, a preamplifier IC and a decision IC, for a 20 Gb/s optical receiver have been developed using SiGe-base bipolar transistors having a 60 GHz maximum cutoff frequency. The preamplifier employing a dual feedback loop increases the -3 dB bandwidth up to 19 GHz. A decision IC, composed of a gain controllable amplifier with a bias stabilization circuit and D-F/F, operated at up to 20 Gb/s with a 200-mVp-p input sensitivity 相似文献
17.
Tezuka H. Soda M. Suzaki T. Takemura H. Fujita S. 《Photonics Technology Letters, IEEE》1993,5(7):803-805
A fully integrated 10 Gb/s optical receiver was realized with silicon ICs. The receiver was fabricated on a breadboard utilizing multicarrier assembly. Receiver sensitivity of -29.3 dBm was achieved using an Er-doped optical fiber preamplifier 相似文献
18.
19.
设计了一种的低成本、低功耗的10 Gb/s光接收机全差跨阻前置放大电路。该电路由跨阻放大器、限幅放大器和输出缓冲电路组成,其可将微弱的光电流信号转换为摆幅为400 mVpp的差分电压信号。该全差分前置放大电路采用0.18 m CMOS工艺进行设计,当光电二极管电容为250 fF时,该光接收机前置放大电路的跨阻增益为92 dB,-3 dB带宽为7.9 GHz,平均等效输入噪声电流谱密度约为23 pA/(0~8 GHz)。该电路采用电源电压为1.8 V时,跨阻放大器功耗为28 mW,限幅放大器功耗为80 mW,输出缓冲器功耗为40 mW,其芯片面积为800 m1 700 m。 相似文献