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P波段脉冲输出150W高增益功率晶体管 总被引:1,自引:0,他引:1
采用微波功率管二次发射极镇流和掺砷多晶硅发射极覆盖树枝状结构等新工艺技术,研制出用于工程的实用化P波段脉冲大功率晶体管。该器件由16个单胞内匹配而成,在该频带内,脉宽500μs,占空比15%,脉冲输出150W,增益大于10dB,集电极效率大于50%。 相似文献
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3.3—3.4GHz28W硅脉冲大功率晶体管的研制 总被引:2,自引:0,他引:2
本介绍了采用网状发射极结构,浓硼扩散发射极镇流电阻,输入,人匹配等技术研制出的硅微波脉冲大功率晶体管,该器件在3.1-3.4GHz的雷达频带内,脉冲输出功率28W,增益7.5dB,效率30%。 相似文献
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南京电子器件研究所研制成功 L波段脉冲输出 36 0 W硅功率晶体管。该器件在 1 .4GHz、脉宽 2 0 μs、占空比 5 %条件下 ,脉冲输出功率 36 0 W,功率增益 7.8d B,效率大于 5 0 %。L波段大功率器件在雷达、卫星遥测等领域有广泛应用。由于这种器件工作频率高、输出功率大、增益高、工艺难度大 ,给器件研制带来很多困难。南京电子器件研究所在掺砷多晶硅发射极二次镇流结构的基础上 ,开发出超自对准功率管芯片工艺技术 ,使发射区和基区横向间距缩小至 0 .5 μm,发射极周长与基区面积比有较大提高 ,同时也减少了基极电阻。经过近 2年的工艺实… 相似文献
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本文介绍了采用网状发射极图形结构、浓硼扩散发射极镇流电阻以及用输入端内部网络匹配和平衡结构器件组装形式研制出的硅大功率器件,该器件在225~400MHz频率下输出功率100W,增益7.5dB,效率55%。 相似文献
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本文对于由非晶硅和单晶硅两个区域构成的发射区结构,计算了利用非晶硅垂直电阻的镇流作用后发射结直流电流密度的横向分布,并给出发射极有效半宽度与发射区方块电阻及基区方块电阻的关系曲线.这些分析有助于非晶硅发射极微波功率管的性能的提高. 相似文献
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Shimura T. Sakai M. Izumi S. Nakano H. Matsuoka H. Inoue A. Udomoto J. Kosaki K. Kuragaki T. Takano H. Sonoda T. Takamiya S. 《Electron Devices, IEEE Transactions on》1995,42(11):1890-1896
High power and high-efficiency multi-finger heterojunction bipolar transistors (HBT's) have been successfully realized at Ku-band by using an optimum emitter ballasting resistor and a plated heat sink (PHS) structure. Output power of 1 W with power-added efficiency (PAE) of 72% at 12 GHz has been achieved from a 10-finger HBT with the total emitter size of 300 μm2. 72% PAE with the output power density of 5.0 W/mm is the best performance ever reported for solid-state power devices with output powers more than 1 W at Ku-band 相似文献
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Jinshu Zhang Hongyong Jia Pei-Hsin Tsien Tai-Chin Lo 《Electron Device Letters, IEEE》1999,20(7):326-328
The emitter ballasting resistor is used to equalize the current distribution between the emitter stripes in power transistor, but it will degrade the output power, power gain, and power added efficiency. Experimental results indicate that the current gain of uniform-base SiGe heterojunction bipolar transistors (HBTs) decreases with the increase of the temperature above 160 K, so the current distribution is equalized by itself to some extent. Therefore, the microwave power SiGe HBTs without emitter ballasting resistor were fabricated for the first time, and the continuous output power of 5 W and power added efficiency of 63% were obtained under Class C operation at a frequency of 900 MHz. Hence, the emitter current density of the SiGe HBT's with emitter width of 6 μm is 0.79 A/cm 相似文献
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在RF LDMOS功率器件中,击穿电压、截止频率fT和导通电阻Ron是器件的关键参数,为提高这几个器件性能参数可采取的各种措施又往往是相互矛盾和相互制约的。文中研究了几个参数之间的关系和优化方案。现在RF LDMOS功率器件在向高工作电压、高输出功率、高可靠性以及脉冲应用等方向发展。所研制器件采用沟背面源结构,采用场板技术降低栅漏电容,采用多晶硅金属硅化物结构降低栅阻。研制结果表明,在漏源工作电压6V、频率520MHz、连续波的测试条件下,输出功率达到5.6W,增益大于12dB,效率大于55%。 相似文献
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Gao G.-B. Unlu M.S. Morkoc H. Blackburn D.L. 《Electron Devices, IEEE Transactions on》1991,38(2):185-196
A systematic investigation of the emitter ballasting resistor for power heterojunction bipolar transistors (HBTs) is presented. The current handling capability of power HBTs is found to improve with ballasting resistance. An equation for the optimal ballasting resistance is presented, where the effects of thermal conductivity of the substrate material and the temperature coefficient of the ballasting resistor are taken into account. Current levels of 400 to 800 mA/mm of emitter periphery at case temperatures of 25 to -80°C for power AlGaAs/GaAs HBTs have been obtained using an on-chip lightly doped GaAs emitter ballasting resistor. Device temperature has been measured using both an infrared microradiometer and temperature-sensitive electrical parameters. Steady-state and transient thermal modeling are also performed. Although the measured temperature is spatially nonuniform, the modeling results show that such nonuniformities would occur for a uniform current distribution, as would be expected for an HBT with emitter ballasting resistors 相似文献