一种新型的CMOS集成湿度传感器

利用MEMS技术,对一种新型CMOS湿度传感器进行理论分析、模拟以及结果讨论.该湿度传感器采用标准CMOS工艺制造,采用梳状铝电极结构、梳状多晶硅加热结构,衬底接地,感湿介质采用聚酰亚胺,利用商业软件Coventor进行模拟绘制出敏感电容与相对湿度的曲线图.接口电路采用开关电容电路,输出可测电压信号,利用Microsim公司的Pspice模拟电路得到相对湿度与输出电压曲线关系.     

一种新型的CMOS集成湿度传感器

利用MEMS技术，对一种新型CMOS湿度传感器进行理论分析、模拟以及结果讨论。该湿度传感器采用标准CMOS工艺制造，采用梳状铝电极结构、梳状多晶硅加热结构，衬底接地，感湿介质采用聚酰亚胺，利用商业软件Coventor进行模拟绘制出敏感电容与相对湿度的曲线图。接口电路采用开关电容电路，输出可测电压信号，利用Microsim公司的Pspice模拟电路得到相对湿度与输出电压曲线关系。     

CMOS兼容电容型湿度传感器的理论模型

对一种与CMOS工艺兼容的电容型湿度传感器进行了理论推导,物理建模和模拟仿真.该湿度传感器是采用梳状铝电极结构,聚酰亚胺作为感湿介质.通过分析感湿介质的介电常数吸附水分后的变化,考虑其电场分布,对电容型湿度传感器的理论模型进行了研究和模拟.利用Matlab软件对理论模型进行仿真,结果表明所建模型比通常采用的Laconte模型更符合实验结果.     

CMOS兼容电容型湿度传感器的理论模型

对一种与CMOS工艺兼容的电容型湿度传感器进行了理论推导，物理建模和模拟仿真．该湿度传感器是采用梳状铝电极结构，聚酰亚胺作为感湿介质．通过分析感湿介质的介电常数吸附水分后的变化，考虑其电场分布，对电容型湿度传感器的理论模型进行了研究和模拟．利用Matlab软件对理论模型进行仿真，结果表明所建模型比通常采用的Laconte模型更符合实验结果．     

CMOS工艺兼容的单片集成湿度传感器

设计并制备了一个CMOS工艺兼容的集成湿度传感器,将湿度传感器与CMOS测量电路集成在同一芯片上.片上集成的湿度传感器为叉指电容式,感湿介质为聚酰亚胺,本文给出了相应的感湿模型.针对湿度传感器在全量程电容变化量较小的特点,本文采用开关电容电路作为片上微电容测量电路,讨论了电路的原理并给出了模拟结果.芯片采用3μm多晶硅栅标准CMOS工艺进行流水.测量结果表明,片上集成湿度传感器在5～35℃有较好的直流输出特性,并且长时间稳定性良好.     

CMOS工艺兼容的单片集成湿度传感器

设计并制备了一个CMOS工艺兼容的集成湿度传感器,将湿度传感器与CMOS测量电路集成在同一芯片上.片上集成的湿度传感器为叉指电容式,感湿介质为聚酰亚胺,本文给出了相应的感湿模型.针对湿度传感器在全量程电容变化量较小的特点,本文采用开关电容电路作为片上微电容测量电路,讨论了电路的原理并给出了模拟结果.芯片采用3μm多晶硅栅标准CMOS工艺进行流水.测量结果表明,片上集成湿度传感器在5～35℃有较好的直流输出特性,并且长时间稳定性良好.     

用于巨磁阻生物传感器检测的模拟前端电路

提出一种用于巨磁阻(GMR)生物传感器检测的模拟前端电路。电路采用电压检测的方法,包括基准电压源,单位增益缓冲器,电荷转移型开关电容采样保持电路,流水线模数转换器四部分;基准电压源用于产生传感器阵列的片内激励电压;传感器阵列的检测输出电压经单位增益缓冲器后,由开关电容采样保持电路进行采样,保持,放大;最后经过流水线模数转换器输出数字码流;芯片采用SMIC 0.18μm 1P6M CMOS厚栅氧工艺实现。测试结果表明,在电源电压3.3 V,20 MHz时钟下测试,整体电路输出信号有效精度达到7.2 bit,功耗33 mW,满足GMR生物传感器的检测要求。     

基于电流镜的微电容式传感器接口电路研究

在集成微电容式传感器的研究中,由于敏感电容值的变化量非常微小,其接口电路的研究对传感器性能提升是至关重要的。设计了一种基于电流镜原理检测的微电容式传感器接口电路,电路由电容转换电压电路、减法器电路、脉冲电路、缓冲器电路等组成。基于0.18μm CMOS工艺库对电路进行设计仿真,结果表明该电路便于与敏感电容兼容,输出电压与敏感电容成线性关系,其检测精确度高、范围广。     

双层CMOS工艺实现湿敏振荡器

本文提出了用双层多晶CMOS工艺来设计和制造湿度控制的多级振荡器.为电路所集成的一部分的温度传感头其结构为叉指状多晶硅电容结构.通过对标准版图的适当调整,便可实现传感器与CMOS工艺的兼容.     

一种格栅状上电极的CMOS工艺聚酰亚胺电容型湿度传感器

报道了采用标准CMOS工艺制作的格栅型上电极的电容型湿度传感器,采用高分子材料聚酰亚胺作为感湿介质,铝作为金属电极.对该湿度传感器的器件结构、制作工艺和传感器特性,如灵敏度、湿滞以及响应时间等进行了讨论.测试结果表明,在12%～92%的湿度范围内,电容一相对湿度曲线具有良好的线性度,灵敏度为0.9 pF/RH,响应时间...     

一种湿度测量电路的设计

采用电容式相对湿度传感器HS1100/1101,设计一种湿度测量电路。通过实际电路实验,用其结果绘制出相对湿度RH与电路输出频率F的关系曲线。单片机的数据处理编程采用分段线性化方法,降低了编程难度。该设计已应用于温度、湿度测量控制电路系统中,具有可靠、稳定、反应快速等特点。     

Resistive humidity sensor based on vanadium complex films

A resistive-type relative humidity （RH） sensor based on vanadium complex （VO2（3-f[）） film is reported in this study. Gold electrodes were deposited on the glass substrates in a co-planar structure. A thin film of vanadium complex was coated as a humidity-sensing material on the top of the pre-patterned electrodes. The humidity-sensing principle of the sensor was based on the conductivity change of coated sensing element upon adsorption/desorption of water vapor. The resistance of the humidity sensor measured at 1 kHz decreased linearly with increasing the humidity in the range of 35%-70% RH. The overall resistance of the sensor decreases 11 times. An equivalent circuit for the VO2（3-fl） based resistive-type humidity sensor was developed. The properties of the sensor studied in this work make it beneficial for use in the instruments for environmental monitoring of humidity.     

A high-speed capacitive humidity sensor with on-chip thermal reset

This paper reports a high-speed capacitive humidity sensor integrated on a polysilicon heater. A response time of 1.0 s and a sensitivity of 30.0 fF/%RH have been obtained. High speed is achieved using multiple polyimide columns having diameters of a few microns and allowing moisture to diffuse into them circumferentially. Using structures that eliminate the air-gap capacitance between the columns, the simulated sensor output drifts by only 1% when the relative dielectric constant in the air region changes from 1 to 10. A polysilicon heater is used to measure relative humidity levels >80% RH. An accuracy of ±3% RH has been obtained using this method, with measurement errors of ±0.5°C and ±2% RH in temperature and relative humidity, respectively. The heater also reduces the recovery time after wetting, enables the sensor to recover from contamination and aging, and allows the sensing film to be reset on demand during self-test protocols     

一种新型CMOS兼容湿度传感器

给出了与CMOS工艺兼容的一种新型梳齿状湿度传感器的结构、工艺流程及其测试结果.利用Coventor软件对这种新型结构进行了理论分析,对制备出的湿度传感器的性能如灵敏度、滞回特性、重复性、响应时间等进行了测试并讨论.结果表明文中提出的CMOS湿度传感器工艺简单、响应时间快、成本低、灵敏度高,有望在实际中得到应用.     

Cobalt oxide nanosheet humidity sensor integrated with circuit on chip

The work studies a micro humidity sensor integrated with a seven-stage ring oscillator circuit-on-a-chip fabricated by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The structure of the humidity sensor consists of interdigitated electrodes and a sensing film. The sensing film is cobalt oxide nanosheet that is prepared by a precipitation-oxidation method. The sensor, which is a capacitive type, changes in capacitance when the sensing film adsorbs or desorbs water vapor. The ring oscillator circuit is employed to convert the capacitance of the sensor into the oscillation frequency output. The post-process of the sensor includes etching the sacrificial oxide layer and coating the sensing film on the interdigitated electrodes.     

Printed Circuit Board Surface Finish and Effects of Chloride Contamination,Electric Field,and Humidity on Corrosion Reliability

Corrosion reliability is a serious issue today for electronic devices, components, and printed circuit boards (PCBs) due to factors such as miniaturization, globalized manufacturing practices which can lead to process-related residues, and global usage effects such as bias voltage and unpredictable user environments. The investigation reported in this paper focuses on understanding the synergistic effect of such parameters, namely contamination, humidity, PCB surface finish, pitch distance, and potential bias on leakage current under different humidity levels, and electrochemical migration probability under condensing conditions. Leakage currents were measured on interdigitated comb test patterns with three different types of surface finish typically used in the electronics industry, namely gold, copper, and tin. Susceptibility to electrochemical migration was studied under droplet conditions. The level of base leakage current (BLC) was similar for the different surface finishes and NaCl contamination levels up to relative humidity (RH) of 65%. A significant increase in leakage current was found for comb patterns contaminated with NaCl above 70% to 75% RH, close to the deliquescent RH of NaCl. Droplet tests on Cu comb patterns with varying pitch size showed that the initial BLC before dendrite formation increased with increasing NaCl contamination level, whereas electrochemical migration and the frequency of dendrite formation increased with bias voltage. The effect of different surface finishes on leakage current under humid conditions was not very prominent.     

SnO_2-LiZnVO_4系湿敏元件电容特性分析

采用共沉淀法制备SnO2-LiZnVO4系湿敏材料,研究了LiZnVO4的掺杂量对材料湿敏电容的影响。结果表明:LiZnVO4的掺杂量,环境的相对湿度(RH)、测试信号频率对湿敏电容有较大影响。当x(LiZnVO4)为10%时,可使材料具有合适的低湿电容和灵敏度。在100Hz下,当环境的RH从33%上升到93%时,SnO2-LiZnVO4系湿敏材料制备的湿敏元件的电容增量可达起始值的2300%,显示出较高的电容湿度敏感性。湿敏元件的电容响应时间约为54s,恢复时间约为60s。湿滞约为RH6%。     

复合钒钛酸干凝胶薄膜的湿敏特性研究

采用sol-gel法制备了复合钒钛酸干凝胶(H2V10Ti2O30-y·nH2O)薄膜,并对其湿敏特性进行了研究。结果表明:该薄膜为层状结构。用此薄膜制备的湿敏元件,在RH为11%～95%的范围内,感湿特性曲线线性好,其响应、恢复时间分别为5s和20s,湿滞为RH2%,感湿温度系数为RH0.45%/℃,并具有良好的稳定性。H2V10Ti2O30-y·nH2O干凝胶薄膜湿敏元件的灵敏度和湿滞均优于复合钒酸(H2V12O31-y·nH2O)干凝胶薄膜湿敏元件。     

Functional antenna integrated with relative humidity sensor using synthesised polyimide for passive RFID sensing

A new type of antenna with an RH (relative humidity) sensing function using a modified polyimide is proposed for passive RFID sensing. Designed to operate at a frequency that depends on the relative humidity level, the proposed antenna is a passive device that physically and functionally combines an antenna with an RH sensor. The compactness and cost-efficiency of the antenna enables it to realise a passive tag of the RFID sensing without an additional sensor component     

高分辨率全帧CCD高速驱动设计

目前采用高分辨率全帧CCD作为图像传感器的航空遥感相机输出帧频低、驱动设计灵活性低,应用受到限制.为提高全帧CCD相机应用水平,通过FTF5066M驱动电路结构和时序关系分析,采用分离器件设计了全帧CCD的稳压变换电路、偏置电压电路和水平垂直驱动电路.利用FPGA设计了四通道高速并行输出的时序脉冲产生电路,克服了传统单通道输出方法的速度限制.试验中,该驱动电路利用MVC3000F镜头成功采集到高速图像.实验表明,本驱动设计配置灵活,输出帧频从0.7fps提高到2.16fps,充分满足了航空遥感相机的高帧频要求.