Cdln2O4和Cd2SnO4薄膜X—光电子能谱研究

研究了在Ａｒ－Ｏ２混合气氛中从Ｃｄ－Ｉｎ和Ｃｄ－Ｓｎ合金靶射频反应溅射而的ＣｄＩｎ２Ｏ４和Ｃｄ２ＳｎＯ４膜的Ｘ－光电子能谱。实验结果表明了粉末Ｃｄ，Ｉｎ，Ｓｎ，ＳｎＯ２，Ｉｎ２Ｏ３和ＣｄＩｎ２Ｏ４，Ｃｄ２ＳｎＯ４膜的Ｃｄ，Ｉｎ，Ｓｎ３Ｄ３／２和３ｄ５／２ＸＰＳ峰值位置的形状的区别，并讨论了Ｏ１ｓ。ＸＰＳ峰随氧浓度的变化。当氧浓度增加时，Ｏ１ｓ分为两个峰。     

CdIn2O4薄膜的AES分析

利用ＡＥＳ方法研究了ＣｄＩｎ２Ｏ４膜的成分分布。膜中的Ｃｄ、Ｉｎ和Ｏ成份随Ｏ浓度的变化而变化，并对膜的电学性质有重要影响。     

射频反应溅射CdIn2O4膜制备过程中氧浓度对光学性质的影响

采用射频反应溅射方法在Ａｒ＋Ｏ２气氛中制备了ＣｄＩｎ２Ｏ４薄膜，报道了在没氧浓度下该膜的透射率和随波长的变化关系。发现氧浓度越高，膜透射率赵低，而消光系数１、折射率相应地越大。对这些结果从ＣＩＯ膜的晶格常数、载流子浓度等角度进行了理论分析。     

La2O3对CH4氧化的催化机制

本文研究了Ｌａ２Ｏ３对ＣＨ４氧化燃烧和氧化偶联的催化机制。实验采用的是分子束技术，以及俄歇电子能谱（ＡＥＳ），四极柱质谱（ＱＭＳ）和Ｘ射线光电子能谱（ＸＰＳ）等表面分析技术。实验结果表明ＣＨ４分子的平动能和Ｌａ２Ｏ３表面的晶格氧（Ｏ２－）是催化氧化ＣＨ４的两个关键因素。燃烧室内壁涂以稀土氧化物催化层将会提高燃烧效率和减少废气污染。     

EBV法制备Znln2S4薄膜的性质研究

用电子束加热真空蒸发法（ＥＢＶ法）制备了厚度为３５０ｎｍ的ＺｎＩｎ２Ｓ４薄膜。研究了最佳成膜工艺条件和最新电子能谱分析结果；通过不同气氛处理可以控制材料的导电类型，典型膜的电阻率为２．５×１０＾－１Ω．ｃｍ，Ｈａｌｌ迁移率为５２ｃｍ＾２．Ｖ＾－１．ｓ＾－１，载流子浓度为１．４２×１０＾１７ｃｍ＾－３，禁带宽度为２．１３ｅＶ。探讨了ＺｎＩｎ２Ｓ４膜的导电机理，并制作了ＺｎＩｎ２Ｓ４－Ｓｉ太阳电池。     

热处理气氛对Cd2SnO4透明导电膜化学态结构和电导率的影响

研究了热处理气氛对用无电沉积方法制备的Ｃｄ２ＳｎＯ４导电膜的化学态结构和导电率的影响。Ｘ射线光电子能谱和室温电阻率测量结果表明，以氢气为热处理气氛时，薄膜中的氧空位最高，导电性好，真空处理次之，以氧气为热处理气氛时，氧空位少，薄膜的导电性能差。     

SnO_2／p接触特性对a－Si太阳电池填充因子的影响

用ＰＥＣＶＤ方法制备出高电导率（～０．２ｓｃｍ－１）、宽带隙（～２．２ｅＶ）的Ｐ型微晶化硅碳合金（ｐ－μｃ－ＳｉＣ：Ｈ）薄膜材料。利用ｐ－μＣ－ＳｉＣ：Ｈ／ｐ－ａ－Ｓｉ：Ｈ复合结构做ａ－Ｓｉ太阳电池的窗口材料，明显改善了ＳｎＯ２／ｐ之间的接触特性，从而使１０ｃｍ×１０ｃｍ单结集成型电池的填充因子从０．７０以下提高到０．７２。     

太阳光控膜的实验研究

采用金属反射膜和介质膜相结合的方法，研制了三种太阳光控膜系，即ＺｎＳ／Ａｇ，Ｉｎ２Ｏ３；ＳｎＡｇ和ＳｉＯ２／Ａｇ，并给出各自的光蛮     

利用涂层提高Si3N4陶瓷材料的抗氧化性能

采用ｓｏｌ－ｇｅｌ的方法在热压Ｓｉ３Ｎ４陶瓷材料的表面涂上一层ＳｉＯ２涂层或３Ａｌ２Ｏ３．２ＳｉＯ２涂层，并用Ｘ光电子能谱的方法检测了涂层后的Ｓｉ３Ｎ４陶瓷材料表面。     

乙烯对纳米硅碳薄膜晶化的影响

在等离子体化学气相沉积系统中采用高氢稀释硅烷加乙烯法制备了ｎｃ－ＳｉＣｘ：Ｈ薄膜。系统研究了Ｃ２Ｈ４／（Ｃ２Ｈ４＋ＳｉＨ４）（Ｘｃ）气体流量比对ｎｃ－ＳｉＣｘ：Ｈ薄膜的晶化和其它不龟性能的影响。     

Cdln2O4膜红外性质分析

利用射频反应溅射Cd-In合金靶沉积的CdIn_2O_4薄膜是n型高兼并半导体,其红外反射率随溅射气体中氧浓度的不同而有异,相同氧浓度下沉积的薄膜经过退火处理后红外反射率也会发生变化。原因是不同氧浓度下沉积薄膜的氧空位不同,其自由载流子浓度也就不同,从而使薄膜有不同的吸收系数。实验结果与理论计算值符合较好。     

Comparative study of Cu2ZnSnS4 film growth

We fabricated Cu₂ZnSnS₄ (CZTS) thin films using two different methods, spray pyrolysis and sulfurization of Cu-Zn-Sn metallic films. Spray pyrolysis was carried out under air ambient with modified ultrasonic spray system. Sulfurizations of metallic Cu-Zn-Sn films were done for stacked metallic films, Cu/Sn/Zn/glass, Cu/Sn/Cu/Zn/glass and Sn/Cu/Zn/glass, which were prepared by sputtering method in high vacuum chamber. The sprayed films were not observed to be grown well with good crystallinity, compared with CZTS films made by sulfurization of stacked metallic films. However, it was found that application of additional sulfurization to sprayed CZTS films induced great improvement of crystallinity to the level of the sulfurized metallic films. This implicates that spray pyrolysis with additional sulfurization is a good method for fabrication of CZTS films, especially as a low-cost fabrication technique. All CZTS films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and Raman spectroscopy measurements.     

Chemical composition dependence of morphological and optical properties of Cu2ZnSnS4 thin films deposited by sol-gel sulfurization and Cu2ZnSnS4 thin film solar cell efficiency

The properties of Cu₂ZnSnS₄ (CZTS) thin films deposited by sol-gel sulfurization were investigated as a function of the chemical composition of the sol-gel solutions used. The chemical composition ratio Cu/(Zn+Sn) of the sol-gel solution was varied from 0.73 to 1.00, while the ratio Zn/Sn was kept constant at 1.15. CZTS films deposited using sol-gel solutions with Cu/(Zn+Sn)<0.80 exhibited large grains. In addition, the band gaps of these Cu-poor CZTS thin films were blue shifted. Solar cells with the structure Al/ZnO:Al/CdS/CZTS/Mo/soda lime glass were fabricated under non-vacuum conditions. The solar cell with the CZTS layer deposited using the sol-gel solution with Cu/(Zn+Sn)=0.80 exhibited the highest conversion efficiency of 2.03%.     

CdS/CdTe太阳电池中CdS多晶薄膜的结构和光学性能

采用XRD,AFM,XPS和光学透射谱对化学水浴法制备的CdS多晶薄膜进行了测试分析。刚沉积的CdS多晶薄膜均匀、透明、致密,主要呈现立方结构;Cd和S的原子百分比约为1 10;能隙(Eg)约为2 47eV。在不同温度下后处理会出现六方结构和3CdSO4·8H2O衍射峰,同时晶面择优取向发生了变化。通过沉积高质量的CdS薄膜,获得了效率约13 4%的CdS/CdTe小面积太阳电池。     

激光激活氧分子作用下CH_4/O_2反应数值模拟

基于化学动力学模型GRI-Mech3.0机理,利用CHEMKIN4.0软件柱寒流反应器模型模拟了激光作用下CH_4/O_2燃烧反应过程.结果表明,通过激光作用控制反应过程,利用特定波长的激光将氧分子激发到相应的亚稳态,能够有效减少化学反应延迟时间.在波长762 nm、光强10 kW/cm~2(温度1 000 K,压强10~5 Pa)条件下,反应延迟时间由0.23 s减小为0.04 s.特别是在温度及压强较低情况下,反应延迟时间明显减小,具有较好的优化效果.     

Influence of H2S concentration on the properties of Cu2ZnSnS4 thin films and solar cells prepared by sol-gel sulfurization

Cu₂ZnSnS₄ (CZTS) thin films prepared by a non-vacuum process based on the sulfurization of precursor coatings, consisting of a sol-gel solution of Cu, Zn, and Sn, under H₂S+N₂ atmosphere were investigated. The structure, microstructure, and electronic properties of the CZTS thin films as well as solar cell parameters were studied in dependence on the H₂S concentration. The sulfurization process was carried out at 500 °C for 1 h in an H₂S+N₂ mixed-gas atmosphere with H₂S concentrations of 3%, 5%, 10%, and 20%. As the H₂S concentration decreased from 20% to 5%, the S content of the CZTS thin films decreased. However, when the H₂S concentration was decreased below 3%, the S content of the films began to increase. A CZTS thin film prepared with an H₂S concentration of 3% had grains in the order of 1 μm in size, which were larger than those of films prepared at other H₂S concentrations. Furthermore, the most efficient solar cell, with a conversion efficiency of 2.23%, was obtained from a sample sulfurized at an H₂S concentration of 3%.     

NiFe2O4为载氧体的生物质半焦化学链燃烧热力学模拟研究

本文建立了以铁酸镍（NiFe2O4）为载氧体的生物质半焦化学链燃烧模型,利用HSC Chemistry 5.0软件对生物质半焦和NiFe2O4载氧体之间的化学链燃烧反应进行了热力学计算,模拟载氧体被半焦还原以及载氧体被空气氧化两个步骤的氧化还原过程,得到燃料反应器的优化操作参数为：载氧体和生物质半焦的摩尔比（O/BC）为1.5,燃料反应器的温度为800℃。热力学分析显示,NiFe2O4在化学链燃烧反应中是按照NiFe2O4→Ni-Fe2O3→ Ni-Fe3O4→Ni-FeO→Ni-Fe的顺序逐级被还原的。氧化过程的模拟说明,在空气气氛中,失去的晶格氧可以恢复到初始的程度,而实验手段得到的氧化产物的X射线衍射图则证明,通过氧化,被还原的载氧体可以大部分恢复到NiFe2O4尖晶石结构。