质子和中子引起的单粒子效应及其等效关系理论模拟

根据器件几何尺寸、掺杂浓度、偏压等因素确定灵敏体积和临界电荷，从而提出单粒子效应的物理模型。考虑了质子和中子在硅中的弹性散射、非弹性散射、两体反应、多体反应以及质子的库仑散射等所有相互作用类型，采用蒙特卡罗方法模拟跟踪入射粒子与核的相互作用以及各种次级带是粒子和反冲核的能量沉积过程。采用Ziegler的拟合公式精确计算质子、a粒子、氚核、反冲核等带电离子的能量沉积。根据模拟结果确定了两种粒子引起的单粒子效应等效系数，并将模拟结果与实验数据进行了对比。     

单粒子效应辐射模拟实验研究进展

应用质子直线加速器进行了静态随机存取存储器(SRAM)的单粒子效应模拟实验研究.采用金箔散射法降低质子束流,研制了弱流质子束测量系统,测量散射后的质子束流,实验测得SRAM质子单粒子翻转截面为10-14 cm2/bit量级.利用重离子加速器和锎源进行了SRAM的单粒子效应实验.研究其单粒子翻转截面与重离子线性能量传输(LET)值的关系,得到了单粒子翻转阈值和饱和截面.实验表明252Cf源单粒子翻转截面与串列加速器的重离子单粒子翻转截面一致,说明对于SRAM,可以用252Cf源替代重离子加速器测量单粒子翻转饱和截面.与中国原子能研究院、东北微电子研究所合作开展了国内首次重离子微束单粒子效应实验.建立了大规模集成电路重离子微束单粒子效应实验方法,找到了国产SRAM的单粒子翻转敏感区.应用14MeV强流中子发生器进行了SRAM单粒子效应实验,测得了64K位至4M位SRAM器件14MeV中子单粒子翻转截面.用α源进行SRAM单粒子效应辐照实验,模拟封装材料中的232Th和238U杂质发射出的α粒子导致的单粒子翻转.测量α粒子射入SRAM导致的单粒子翻转错误数,计算单粒子翻转截面和失效率,比较三种器件的抗单粒子翻转能力,为器件的选型提供依据.并开展了路由器的α粒子辐照实验,复演了路由器在自然环境中的出错情况,为路由器的设计改进提供了依据.     

静态随机存取存储器质子单粒子效应实验研究

描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。采用金箔散射法可以降低加速器质子束流五六个量级，从而满足半导体器件质子单粒子效应的要求。研制的弱流质子束流测量系统和建立的注量均匀性测量方法解决了质子注量的准确测量问题。提高了存储器单粒子效应长线测量系统的性能，保证了翻转数的准确测量。实验测得静态随机存取存储器质子单粒子翻转截面为１０＾－１４ｃｍ＾２／ｂｉｔ量级，随质子能量的增大略有增大。     

单粒子效应不同模拟源的等效性实验研究初探

地面模拟单粒子效应(Single event effect,SEE)采用的模拟源主要有加速器(重离子加速器、高能质子加速器)、天然放射源(锎裂变碎片源)和脉冲激光模拟源.本文针对三种不同的模拟源(脉冲激光、重离子、锎源),开展IDT6116 SRAM单粒子效应不同模拟源的等效性实验研究,探索三种不同的模拟源评估器件和集成电路抗单粒子效应敏感性的等效性,并将三种不同的模拟源的实验结果进行分析比对,比对结果表明,三种不同模拟源模拟实验取得的实验结论基本一致.     

单粒子效应模拟实验研究

单粒子效应是卫星抗辐射加固研究的主要对象之一。文章重点介绍了所建立的模拟实验测量系统、装置和研究方法，提出了二次翻转问题及其修正公式，以及器件的高能质子和１４ＭｅＶ中子单粒子效应的规律相似性，指出今后需重点研究的问题是高能质子及其与１４ＭｅＶ中子等效研究，及对单粒子效应的评估。     

65 nm工艺SRAM低能质子单粒子翻转错误率预估

质子单粒子效应是纳米工艺集成电路空间应用面临的主要辐射问题之一。本文开展了一款商业级65 nm工艺4 M×18 bit随机静态存储器（SRAM）质子单粒子翻转实验研究。针对地球同步轨道、低地球轨道，使用Space Radiation 7.0程序，预估了低能质子、高能质子和重离子引起的错误率。错误率预估分析结果表明，不同轨道及环境模型下低能质子错误率占总错误率的比例范围为1%~86%，其中太阳质子事件、地球俘获带等环境模型中低能质子单粒子翻转引起的错误率占主导，建议空间应用的元器件对低能质子不敏感。     

质子核反应二次粒子引起的静态存储器单粒子翻转截面计算

研究建立了质子单粒子翻转截面计算方法。基于蒙特卡罗软件Geant4,计算分析了不同能量质子核反应产生二次粒子对有效体积带来的影响,确定了有效体积大小。计算了静态随机存取存储器的质子单粒子翻转截面和多位翻转截面。计算结果在趋势上与双参数公式所预言的相符合,并可得到很高能量质子引起的极限截面;在较低能段的数据与文献的理论和实验值相符。     

pA量级质子束流测量系统

研制的质子束流测量系统，本底电流仅为１０＾－１４Ａ量级，可测最大电流达ｍＡ量级。在质子单粒子效应实验中，测得了ｐＡ量级的质子束及其随时间变化的关系，为半导体体器件粒子翻转截面的计算提供了必需的数据。     

光电耦合器的单粒子瞬态脉冲效应研究

利用脉冲激光模拟单粒子效应实验装置研究光电耦合器HCPL-5231和HP6N134的单粒子瞬态脉冲(SET)效应.实验获得了相关器件的单粒子瞬态脉冲波形参数与等效LET的关系,并甄别出器件SET效应的敏感位置,初步分析了SET效应产生的机理.利用脉冲激光测试了光电耦合器的SET宽度与等效LET的关系,并尝试测试了两种光电耦合器的SET效应的截面,其中,HCPL-5231的实验结果与其他文献利用重离子加速器得到的数据符合较好,验证了脉冲激光测试器件单粒子效应的有效性.     

SRAM单粒子效应监测平台的设计

SRAM单粒子效应监测平台用于兰州重离子加速器(HIRFL)辐照终端开展单粒子效应实验,采用"承载子板-主控制板-上位机"结构.简要分析了SRAM单粒子效应产生机理,详细描述了该平台的硬件系统、软件系统和性能指标.重离子辐照实验中,该平台多次检测到IDT71256发生单粒子翻转和单粒子闩锁,实验结果与理论分析的结论基本一致.     

100 MeV质子降能材料的选择研究

降能器对于提升质子单粒子效应（SEE）地面模拟试验的效率具有重要意义，而降能材料的选择是降能器设计中的首要问题。计算了100 MeV质子在4种常见降能材料铍、石墨、铝、铜中产生的能量岐离、角度岐离、中子本底以及感生放射性等对质子SEE地面模拟试验有影响的4个方面，其中感生放射性的计算中包含了降能过程在材料中产生的放射性核素种类、活度及残余剂量率。根据以上计算结果，并结合质子SEE地面模拟试验的要求，在降低相同的能量这一情况下，对4种材料作为100 MeV质子降能材料的适用性进行了分析比较，最终选择铝作为100 MeV质子的降能材料，并将应用在中国原子能科学研究院100 MeV质子回旋加速器的质子SEE地面模拟试验装置的降能器设计中。     

Single-event effects induced by medium-energy protons in 28 nm system-on-chip

Single-event effects(SEEs) induced by medium-energy protons in a 28 nm system-on-chip(So C) were investigated at the China Institute of Atomic Energy. An on-chip memory block was irradiated with 90 MeV and70 MeV protons, respectively. Single-bit upset and multicell upset events were observed, and an uppermost number of nine upset cells were discovered in the 90 MeV proton irradiation test. The results indicate that the SEE sensitivities of the 28 nm SoC to the 90 MeV and 70 MeV protons were similar. Cosmic Ray Effects on Micro-Electronics Monte Carlo simulations were analyzed, and it demonstrates that protons can induce effects in a 28 nm SoC if their energies are greater than 1.4 MeV and that the lowest corresponding linear energy transfer was 0.142 MeV cm~2 mg~(-1). The similarities and discrepancies of the SEEs induced by the 90 MeV and 70 MeV protons were analyzed.     

A comparison of neutron-induced SEU rates in Si and GaAs devices

The single-event-upset rates due to neutron-induced nuclear recoils have been calculated for Si and GaAs components using the HETC and MCNP codes and the ENDF data base for (n, p) and (n, alpha) reactions. For the same critical charge and sensitive volume, the upset rate in Si exceeds that of GaAs by a factor of about 1.7, mainly because more energy is transferred in neutron interactions with lighter Si nuclei. The upset rates due to neutrons are presented as functions of critical charge and atmospheric altitude. Upsets induced by cosmic-ray nuclei, secondary protons and neutrons are compared.     

Single Event Upsets in RAMs Induced by Protons at 4.2 GeV and Protons and Neutrons below 100 MeV

Several different types of random-access-memories (RAMs) have been tested for soft upset susceptibility under a variety of different particle bombardments including thermal neutrons, GeV protons, and protons and neutrons below 100 MeV and with few exceptions found to suffer single event upsets. Devices tested included 4K, 16K and 64K dynamic RAMs and 4K NMOS and 256×4 CMOS static RAMs. Mean upset fluences varied from 106 particles/cm2-upset for 64K dynamic RAMs up to no upsets observed for the 256×4 CMOS RAM. No thermal neutron induced upsets are believed to have occurred. GeV protons, simulating primary cosmic rays, caused upsets at levels of 107 particles/cm2-upset.     

Energy Loss Distribution of Recoil Protons in Stilbene Scintillator

Formulas are derived for calculating the energy loss distribution of recoil protons in a cylindrical organic scintillator with a broad beam of fast neutrons in the energy range 1 to 15 MeV perpendicularly incident on its base. The assumptions are: (1) the scintillator is composed solely of hydrogen and carbon; (2) only elastic scattering from hydrogen and carbon is considered in relation to the interaction of fast neutrons with the scintillator; (3) single and double scattering alone are considered; (4) wall effect is neglected for recoil protons produced in the second collisions; (5) the radius and the thickness of the scintillator are greater than the range of recoil protons of the highest energy.

As an example, the calculated results are shown for stilbene crystals of 1″ dia. and 1/8″ to 1″ thick. In scintillators of thicknesses below 1/4″, and for incident fast neutrons in the energy range from 3 to 15 MeV, the contribution of double scattering to the energy loss distribution of recoil protons is below about 10% of that of single scattering, while wall effect is quite significant, in particular, for incident neutrons of high energy.     

Characterization of displacement cascade damage produced in Cu3Au by fast-particle irradiation

Zones of reduced long-range order created at displacement cascade sites in well-ordered Cu₃Au may be directly imaged in the transmission electron microscope so that quantitative information can be obtained on individual cascade events. This technique has been used to characterise the cascade damage created by three fast particles (3.5 MeV protons, a source of moderated fission neutrons and a source of fusion neutrons with energies peaking at 14.8 MeV) with the aim of comparing the experimental observations with the relevant collision models. In each case, disordered zone number densities, sizes and shapes were determined, and were found to be characteristic of each irradiation, with the sizes of disordered zones and the proportion of zones of complex shape increasing on going from 3.5 MeV protons to fission neutrons to fusion neutrons. The quantitative results are largely consistent with the different calculated primary recoil spectra, although in the fusion neutron case some discrepancies are found which cannot readily be explained by limitations in the experimental technique. More specifically, more and larger disordered zones are found than expected from the calculated recoil spectrum. Subcascade formation was observed only in the neutron irradiations, with the distributions of sizes and shapes of individual sub-cascades being very similar in the two cases (in marked contrast to those obtained from sizing total cascade events). Finally, the production of point-defect clusters at cascade sites was studied. The efficiency of cascade collapse increased on going from 3.5 MeV protons to fission neutrons to fusion neutrons.     

Neutron-irradiated plastic scintillators

The polystyrene (PS)-based scintillator SCSN38, pure PS and pure polymethylmethacrylate (PMMA) have been irradiated with a beam of fast neutrons and with reactor neutrons. The radiation-induced permanent optical absorption coefficients after total annealing in air are compared with data for γ irradiations. The strong differences might be due to the high linear energy transfer (LET) of the recoil protons elastically scattered by the neutrons.     

微处理器中子单粒子效应测试系统设计与试验研究

为开展微处理器的空间大气中子单粒子效应研究,以一款TI公司65 nm CMOS工艺的微处理器为研究对象,研制了一套微处理器中子单粒子效应测试系统。该测试系统可实现对被测微处理器的单粒子翻转、单粒子功能中断和单粒子闩锁效应的实时监测。利用加速器中子源,对该微处理器开展14 MeV中子辐照试验。试验结果表明,中子注量累积达3?5×1011 cm-2时,该器件未发生单粒子锁定效应。但总线通信、模数转换等功能模块发生了多次单粒子功能中断,其中集成总线通信接口模块为最敏感单位,试验获得的器件中子单粒子效应截面为6?6×10-11 cm2。     

Estimation of Neutron Yield from Individual Fragment in Medium-Excitation Fission

A method of calculation is described to estimate the average number of neutrons emitted per fragment in medium-excitation fission from published experimental data on neutron emission in thermal-neutron induced fission, average total kinetic energy as a function of fragment mass and mass yield in low- and medium-excitation fission reactions. Use is made of a relation of fragment excitation energy with internal excitation and deformation energies, and the difference in kinetic energy between the fission reactions at two-excitation energies. A tentative calculation is made for the fission of ²³⁸U induced by 12 MeV protons. The results are in good agreement with experimental data.

The method developed in the present work may make it possible to predict the average number of neutrons emitted from individual fragment in medium-excitation fission which has not yet been measured experimentally.