超视距协同空战态势评估方法研究

针对目前超视距协同空战态势评估非参量法模型的缺点,提出了一种新的非参量法模型.该模型针对超视距协同空战的特点,以双机对飞、导弹互射为主,以载机空战能力、机载导弹武器性能、载机高度及机载雷达的探测距离等性能参数作为主要研究对象,分别建立了超视距攻击方式威胁函数、超视距时间威胁函数、超视距高度威胁函数和协同空战能力威胁函数,并采用线性加权法将各种威胁函数进行综合,求得协同空战中的整体威胁态势,作为战术选择、目标分配、火力分配的基础.模型较全面、合理地反映了超视距协同空战的特点.仿真算例验证了模型的有效性.     

灰色关联投影法在战斗机空战效能评估中的应用

提出了一种基于多目标决策灰色关联投影的战斗机空战效能评估方法，介绍该方法的基本原理，根据战斗机的机动性、火力、探测目标能力、操纵效能、生存力、航程和电子对抗能力等指标，运用多目标决策灰色关联投影法对现役世界各国主战飞机进行评估。结果合理，说明该方法用于空战效能评估是可行的。     

基于改进非参量法的现代空战威胁评估研究

针对现有威胁评估非参量模型的不足,提出一种改进的非参量法模型。该模型结合对现代空战过程和影响参数的分析,充分考虑现代空战的特点,构造了参战双方战机的态势、效能、事件、目标战役价值等优势函数,优化了方位角、进入角、距离、能量、效能等优势函数然,并将事件、目标战役价值作为威胁评估的因素,采用熵权法求得权重系数后,线性加权法将各优势函数综合,求得总体优势函数。最后,对优化、改进的非参量法模型进行仿真,仿真结果表明,该模型更符合超视距空战的实际,并且对现代空战威胁评估合理、有效。     

基于离差最大化的空战目标威胁评估

威胁评估是协同多目标攻击空战决策的关键技术之一。在分析了现有的目标威胁评估方法中距离威胁模型存在不足的基础上,考虑敌我双方飞机的雷达最大探测距离和导弹最大射程的不同情况,提出了改进的距离威胁模型。针对传统威胁评估方法在确定权重系数方面的缺陷和不足,提出了运用离差最大化方法来解决目标威胁评估问题,给出了离差最大化方法确定威胁因素权重的具体步骤。建立了目标威胁评估的数学模型,并进行了仿真研究,仿真结果表明该方法是合理和有效的。     

基于信息熵和TOPSIS法的目标威胁评估及排序

针对现有空战目标威胁评估方法中存在的不足,提出了一种基于信息熵和TOPSIS法的空战目标威胁评估方法。首先建立了空战目标威胁评估指标,确定了角度、速度、隐身等威胁因子;为综合考虑评估中的主客观因素,采用了组合权衡因子确定最终权重;最后采用TOPSIS法作为威胁评估的解算方法,进行仿真验证,结果证明了该方法的有效性及合理性。     

舰艇编队超视距反导威胁评估指标主观权重确定

针对舰艇编队超视距反导威胁评估指标主观权重确定问题,建立威胁评估指标体系。分别针对决策者给出的语言型、效用值型、序关系值型、模糊互补判断矩阵型、互反判断矩阵型以及区间数型指标权重信息建立了指标权重确定的最优化模型,将主观指标权重确定问题建模为多目标约束优化问题,在得出各种类型权重信息矩阵的规范化系数的基础上采用线性加权的方法将其变为单目标约束优化问题,并给出了指标主观权重解。仿真结果显示,该方法能够直接集结决策者给出的多种类型的指标权重确定信息,且能够准确地得到舰艇编队超视距反导威胁评估主观权重,计算量小、易于进行工程推广,能够为舰艇编队超视距反导作战辅助决策系统设计提供一定的理论支持。     

歼击机雷达综合瞄准系统超视距空战中的效能

探讨了在超视距空战中歼击机雷达综合瞄准系统(RLPK)的效能评估方法问题。通过分析雷达综合瞄准系统在超视距空战中的典型工作状态,采用概率分析法提出了效能指标。运用概率论相关知识,分别建立了雷达综合瞄准系统在远距导引阶段、搜索与发现/识别阶段、威胁评估/火力分配阶段、小区搜索/截获/跟踪阶段以及空空导弹制导阶段的效能模型。算例表明:系统的工作周期越短,抗干扰能力越强,系统在超视距空战中的效能越大;目标与火力分配环节对单机单目标空战影响不大,但对单机多目标与多机多目标空战影响较大。     

超视距空战的几个观点

介绍了超视距空战武器发展和实战应用,提出了和超视距空战有关的几个观点:信息战和网络中心战是如何影响超视距空战,在超视距中指挥协同和信息的问题,超视距空战和多目标攻击的关系,在超视距空战研究中容易忽视的问题——在空战中如何对付敌方超视距武器,评价战斗机超视距空战能力要考虑的问题,超视距和视距内空战的界限可能逐渐模糊以及无人机在超视距空战中的作用。     

战斗机对空作战效能评估

当前对战斗机的能力评估已经从关注其性能发展到关注其效能上,研究人员一直在努力探索如何对战斗机作战效能进行评估。根据现代空战模式将空战过程分解为超视距空战和视距内空战,并分别对作战飞机进行作战效能评估。针对战斗机的隐身性,提出雷达探测能力、被动雷达探测能力和红外探测能力作为超视距空战中态势感知能力的指标。对于超视距空战和视距内空战的作战效能评估均采用层次分析法,并给出计算各项子能力的计算模型。     

基于态势预测的超视距目标威胁评估方法

提出了一种综合考虑能力威胁、态势威胁和空战意图威胁的超视距空战目标威胁评估新方法。首先,在能力威胁模型中加入了先敌发射能力威胁和超视距导弹攻击威胁模型;其次,针对态势威胁以态势有效性、制导有效性进行修正,给出一种新的态势威胁计算方法;然后,基于隐马尔可夫模型(HMM)实现目标的机动辨识和态势预测,在此基础上提出了意图威胁建模方法;最后,对综合威胁评估模型进行了仿真,验证了所提方法在超视距目标威胁评估问题中的有效性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.