The effect of intragranular microstress in Al2O3—SiC nanocomposites

A theoretical model is established to investigate the intragranular particle residual stress in Al2O3-SiC nanocomposites.Using this model,we calculate the average compressive stress on the Al2O3 grain boundary(GB) and the average tensile stress within Al2O3 grains caused by SiC nanoparticles.The normal compressive stress strengthens the GB,and the average tensile stress weakens the grains.The model gives a reasonable interpretation of the strength changes of Al2O3-SiC nanocomposites with the number of SiC particles.     

The phase transition,hygroscopicity, and thermal expansion properties of Yb_2-xAl_xMo₃O₁₂

Materials with the formula Yb 2-xAlxMo3O12(x =0.1, 0.2, 0.3, 0.4, 0.5, 0.7, 0.9, 1.0, 1.1, 1.3, 1.5, and 1.8) were synthesized and their structures, phase transitions, and hygroscopicity investigated using X-ray powder diffrac- tion, Raman spectroscopy, and thermal analysis. It is shown that Yb2-xAlxMo3O12 solid solutions crystallize in a single monoclinic phase for 1.7 ≤ x ≤ 2.0 and in a single orthorhombic phase for 0.0 ≤ x ≤ 0.4, and exhibit the characteristics of both monoclinic and orthorhombic structures outside these compositional ranges. The monoclinic to orthorhombic phase transition temperature of Al2Mo3O12 can be reduced by partial substitution of Al 3+ by Yb3+, and the Yb2-x AlxMo3O12 (0.0 < x ≤ 2.0) materials are hydrated at room temperature and contain two kinds of water species. One of these interacts strongly with and hinders the motions of the polyhedra, while the other does not. The partial substitution of Al3+ for Yb3+ in Yb2Mo3O12 decreases its hygroscopicity, and the linear thermal expansion co- efficients after complete removal of water species are measured to be 9.1×10 6 /K, 5.5×10 6 /K, 5.74×10 6 /K, and 9.5 × 10 6 /K for Yb1.8 Al0.2 (MoO4)3 , Yb1.6Al0.4 (MoO4 )3, Yb0.4 Al1.6 (MoO4)3 , and Yb 0.2Al1.8 (MoO4)3 , respectively.     

The influence of interfacial barrier engineering on the resistance switching of In₂O₃:SnO₂/TiO₂/In₂O₃:SnO₂ device

The I–V characteristics of In2O3:SnO2/TiO2/In2O3:SnO2 junctions with different interfacial barriers are inves- tigated by comparing experiments. A two-step resistance switching process is found for samples with two interfacial barriers produced by specific thermal treatment on the interfaces. The nonsynchronous occurrence of conducting filament formation through the oxide bulk and the reduction in the interfacial barrier due to the migration of oxygen vacancies under the electric field is supposed to explain the two-step resistive switching process. The unique switching properties of the device, based on interfacial barrier engineering, could be exploited for novel applications in nonvolatile memory devices.     

Spectroscopic characterization of Yb:Sc₂O₃ transparent ceramics

Yb:Sc2O3 transparent ceramics are fabricated by a conventional ceramic process and sintering in H2 atmosphere. The room-temperature spectroscopic properties are investigated, and the Raman spectrum shows an obvious vibration characteristic band centred at 415 cm 1 . There are three broad absorption bands around 891, 937, and 971 nm, respectively. The strongest emission peak is centred at 1.04 μm with a broad bandwidth (11 nm) and an emission cross-section of 1.8×10 20 cm 2 . The gain coefficient implies a possible laser ability in a range from 990 nm to 1425 nm. The energy-level structure shows that Yb:Sc 2 O 3 ceramics have large Stark splitting at the ground state level due to their strong crystal field. All the results show that Yb:Sc2O3 transparent ceramics are a promising material for short pulse lasers.     

Substrate-induced stress in silicon nanocrystal/SiO₂ multilayer structures

A Raman frequency upshift in the nc-Si phonon mode is observed at room temperature, which is attributed to a strong compressive stress in the Si nanocrystals. The 10-period amorphous-Si(3 nm)/amorphous-SiO2 (3 nm) layers are deposited by high-vacuum radio-frequency magnetron sputtering on quartz and sapphire substrates at different temperatures. The samples are then annealed in N2 atmosphere at 1100°C for 1 h for Si crystallization. It is demonstrated that the presence of a supporting substrate at the high growth temperature can induce different types of stresses in the Si nanocrystal layers. The strain is attributed to the difference in the thermal expansion coefficient between the substrate and the Si/SiO2 SL film. Such a substrate-induced stress indicates a new method for tuning the optical and electronic properties of Si nanocrystals for strained engineering.     

Theoretical investigation on the electronic structure,elastic properties,and intrinsic hardness of Si₂N₂O

According to the density functional theory we systematically study the electronic structure, the mechanical prop- erties and the intrinsic hardness of Si2N2O polymorphs using the first-principles method. The elastic constants of four Si2N2O structures are obtained using the stress-strain method. The mechanical moduli (bulk modulus, Young’s mod- ulus, and shear modulus) are evaluated using the Voigt-Reuss-Hill approach. It is found that the tetragonal Si2N2O exhibits a larger mechanical modulus than the other phases. Some empirical methods are used to calculate the Vickers hardnesses of the Si2N2O structures. We further estimate the Vickers hardnesses of the four Si2N2O crystal structures, suggesting all Si2N2O phases are not the superhard compounds. The results imply that the tetragonal Si2N2O is the hardest phase. The hardness of tetragonal Si2N2O is 31.52 GPa which is close to values of β-Si3N4 and γ-Si3N4.     

Effects of N-doping concentration on the electronic structure and optical properties of N-doped β-Ga₂O₃

The electronic structures and the optical properties of N-doped β-Ga2O3 with different N-doping concentrations are studied using the first-principles method.We find that the N substituting O(1) atom is the most stable structure for the smallest formation energy.After N-doping,the charge density distribution significantly changes,and the acceptor impurity level is introduced above the valence band and intersects with the Fermi level.The impurity absorption edges appear to shift toward longer wavelengths with an increase in N-doping concentration.The complex refractive index shows metallic characteristics in the N-doped β-Ga2O3.     

Orientation effects on the bandgap and dispersion behavior of 0.91Pb(Zn_1/3Nb_2/3)O₃-0.09PbTiO₃ single crystals

0.91Pb(Zn1/3Nb2/3)O3-0.09PbTiO 3(PZN-9%PT) single crystals with different orientations are investigated by using a spectroscopic ellipsometer,and the refractive indices and the extinction coefficients are obtained.The Sellmeier dispersion equations for the refractive indices are obtained by the least square fitting,which can be used to calculate the refractive indices in a low absorption wavelength range.Average Sellmeier oscillator parameters E o,λ o,S o,and E d are calculated by fitting with the single-term oscillator equation,which are related directly to the electronic energy band structure.The optical energy bandgaps are obtained from the absorption coefficient spectra.Our results show that the optical properties of [001] and [111] poled crystals are very similar,but quite different from those of the [011] poled crystal.     

The interplay between the lattice and magnetism in La(Fe_11.4Al_1.6)C_0.02 studied by powder neutron diffraction

The crystallographic structure and magnetic properties of La(Fe 11.4 Al 1.6 )C 0.02 are studied by magnetic measure- ment and powder neutron diffraction with temperature and applied magnetic field. Rietveld refinement shows that La(Fe 11.4 Al 1.6 )C 0.02 crystallizes into the cubic NaZn 13 -type with two different Fe sites: Fe I (8b) and Fe II (96i), and that Al atoms preferentially occupy the Fe II site. A ferromagnetic state can be induced at a medial temperature of 39 K–139 K by an external magnetic field of 0.7 T, and a large lattice is correspondingly found at 100 K and 0.7 T. In all other conditions, La(Fe 11.4 Al 1.6 )C 0.02 has no net magnetization in the paramagnetic (T > T N = 182 K) or antifer- romagnetic states, and thus keeps its small lattice. Analysis of the Fe–Fe bond length indicates that the ferromagnetic state prefers longer Fe–Fe distances.     

10BaF₂:NaF,Na₃AlF₆/TiO₂ composite as a novel visible-light-driven photocatalyst based on upconversion emission

A rare-earth free upconversion luminescent material, 10BaF 2 :NaF, Na 3 AlF 6 , is synthesized by a hydrothermal method. The study of fluorescent spectrum indicates that it can convert visible light (550 nm–610 nm) into ultraviolet light (290 nm–350 nm), and two emission peaks at 304 nm and 324 nm are observed under the excitation of 583 nm at room temperature. Subsequently, 10BaF 2 :NaF, Na 3 AlF 6 /TiO 2 composite photocatalyst is prepared and its catalytic activity is evaluated by the photocatalytic reduction of CO 2 under visible light irradiation (λ > 515 nm). The results show that 10BaF 2 :NaF, Na 3 AlF 6 /TiO 2 is a more effective photocatalyst for CO 2 reduction than pure TiO 2 , their corresponding methanol yields are 179 and 0 μmol/g-cat under the same conditions. Additionally, the mechanism of photocatalytic reduction of CO 2 on 10BaF 2 :NaF, Na 3 AlF 6 /TiO 2 is proposed.     

溶胶-凝胶法制备BaGd1-xEuxB9O16红色磷光粉的发光

采用溶胶-凝胶法制备出BaGd_1-xEu_xB₉O₁₆红色磷光粉,对过程的物料配比、前驱体处理和晶化温度等制备条件进行了讨论。结果表明,样品在850 ℃下开始晶化,900 ℃时就能够获得较好的晶化产物,结合不同晶化温度下的发光强度比较确定,晶化温度为950 ℃时,BaGd_1-xEu_xB₉O₁₆磷光粉具有较高的结晶状态和发光强度。当Eu浓度x=0.9时具有最大的发光强度;初始原料配比硼酸须按计量过量15%。所得荧光粉的激发光谱峰值为264,394,465,534 nm等,分别归属于Eu-O电荷迁移带及Eu³⁺的⁷F₀-⁵L₆、⁷F₀-⁵D₂和⁷F₀-⁵D₁跃迁,发射光谱呈Eu³⁺的特征红光,最强的发射峰位于614 nm,归属于⁵D₀-⁷F₂跃迁。进一步研究表明该磷光粉中存在着Gd³⁺对Eu³⁺的能量传递。     

Performance of La₂O₃/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors

We report on the performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOSHEMTs) and InAlN/GaN high electron mobility transistors(HEMTs).The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device,while the gate leakage current in the reverse direction could be reduced by four orders of magnitude.Compared with the HEMT device of a similar geometry,MOSHEMT presents a large gate voltage swing and negligible current collapse.     

Influence of a two-dimensional electron gas on current-voltage characteristics of Al_0.3Ga_0.7 N/GaN high electron mobility transistors

The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors(HEMTs) are investigated and simulated using the self-consistent solution of the Schro¨dinger and Poisson equations for a two-dimensional electron gas(2DEG) in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 1013 A/m2 within a very narrow region(about 5 nm).For a current density of 7 × 1013 A/m2 passing through the 2DEG channel with a 2DEG density of above 1.2 × 1017 m-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.     

微波水热法制备铋铕共掺杂氧化钇磷光粉

用微波水热法制备化学计量比为(Y_0.94-x,Eu_0.06, Bi_x)₂O₃(x=0, 0.01~0.06 )的铋铕共掺杂氧化钇磷光粉。用XRD、SEM、EDS、荧光光谱及HRTEM等进行表征。结果表明:该系统由于铋的加入使(211)晶面的生长受到抑制;在激发波长346 nm时,由于铋的掺入使发光增强;随铋掺杂量的增加,其发光先增强后减弱,并在x=0.03时有最大值;因此该系统可作为320~375 nm的近紫外(如白光LED及高压汞灯)激发用磷光粉。该系统在激发波长为254 nm时,铋的加入使发光强度减弱;因此该系统不适合用于低压汞灯。     

Calculations of the vibrational frequency and isotopic shift of UF₆ and U₂ F₆

Molecular structure, vibrational frequency and infrared intensity of UF 6 are investigated by using the revised Perdew-Burke-Enzerhof function with the triple-zeta polarized basis set. The calculation results are in good agreement with the experimental values and indicate the existence of a stable U2F6 molecule with a multiple bonded U2 unit. The calculation results also predict that the D3d symmetry of U2F6 is more stable than D3h . The optimized geometries, vibrational frequencies, and infrared intensities are also reported for U2F6 molecules in D3d symmetry. In addition, the isotopic shift of vibrational frequencies of the two molecules under isotopic substitution of uranium atom are also investigated with the same method. The U2F6 molecule is predicted to be better than UF6 for laser uranic isotope separation.     

Homogeneous interface-type resistance switching in Au/La_0.67Ca_0.33MnO₃/SrTiO₃/F:SnO₂ heterojunction memories

La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunctions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 × 10 4 % by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.     

Synthesis and magnetic properties of FeNi<Subscript>3</Subscript>/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> core-shell nanocomposites

In this study, FeNi₃/Al₂O₃ core-shell nanocomposites, where individual FeNi₃ nanoparticles were coated with a thin layer of alumina, were fabricated by a modified sol-gel method. Several physical characterizations were performed on the samples of FeNi₃/Al₂O₃ nanocomposites with different thickness of Al₂O₃ shell. The encapsulation of FeNi₃ nanoparticles with alumina stops FeNi₃ agglomeration during heat treatment, and prevents interaction among the closely spaced magnetic FeNi₃ nanoparticles. The Al₂O₃ insulating shell improves the soft magnetic properties of FeNi₃. The study of the complex permeability of the samples shows that the real part μ’ of the permeability of the sample with Al molar content of 20% (Al/(Fe+Ni)) is as high as 12, and independent of frequency up to at least 1 GHz. The tunneling magnetoresistance arising from the presence of the Al₂O₃ shell have also been studied.     

Interface-related switching behaviors of amorphous Pr_0.67Sr_0.33MnO₃-based memory cells

The resistive switching properties in amorphous Pr0.67Sr0.33MnO3 films deposited by pulsed laser deposition are investigated.Reproducible and bipolar counter-8-shape and 8-shape switching behaviours of Au/Pr0.67Sr0.33MnO3 /F:SnO2 junctions are obtained at room temperature.Dramatically,the coexistence of two switching polarities could be reversibly adjusted by an applied voltage range.The results allocated those two switching types to areas of different defect densities beneath the same electrode.The migration of oxygen vacancies and the trapping effect of electrons under an applied electric field play an important role.An interface-effect-related resistance switching is proposed in an amorphous Pr0.67Sr0.33MnO3-based memory cell.     

Generation of a mid-infrared broadband polarized supercontinuum in As₂Se₃ photonic crystal fibers

A simplified structure of birefringent chalcogenide As 2 Se 3 photonic crystal fiber(PCF) is designed.Properties of birefringence,polarization extinction ratio,chromatic dispersion,nonlinear coefficient,and transmission are studied by using the multipole method,the finite-difference beam propagation method,and the adaptive split-step Fourier method.Considering that the zero dispersion wavelength of our proposed fiber is about 4 μm,we have analysed the mechanism of spectral broadening in PCFs with different pitches in detail,with femtosecond pulses at a wavelength of 4 μm as the pump pulses.Especially,mid-infrared broadband polarized supercontinuums are obtained in a 3-cm PCF with an optimal pitch of 2 μm.Their spectral width at 20 dB reaches up to 12 μm.In the birefringent PCF,we find that the supercontinuum generation changes with the pump alignment angle.Research results show that no coupling between eigenpolarization modes are observed at the maximum average power(i.e.,37 mW),which indicates that the polarization state is well maintained.     

Spacer layer thickness fluctuation scattering in a modulation-doped Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum well

We theoretically study the influence of spacer layer thickness fluctuation(SLTF) on the mobility of a twodimensional electron gas(2DEG) in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.