基于波束空间的自适应波束形成算法

提出了一种稳健的波束形成算法。该算法利用干扰信号的导引向量和噪声向量对接收信号的协方差矩阵进行重构,经此处理后的协方差矩阵的信号子空间中不再包含期望信号成分,使得当期望信号功率较强时应用LCMV算法也不会对期望信号进行抑制。此外,算法还引入了锥形方差矩阵技术增强算法抑制干扰的能力。最后仿真证明了该算法的有效性。     

基于二阶锥规划的相干信号深零陷自适应波束形成

针对常规自适应波束形成算法在强相干干扰情况下零陷深度不够、甚至干扰抑制失效的问题,提出了一种基于二阶锥规划的相干信号深零陷自适应波束形成算法。该算法首先对接收数据协方差矩阵进行Toeplitz重构,使其包含信号和干扰的所有方位信息。然后重构了干扰加噪声协方差矩阵。接着在保证期望方向波束无失真前提下,约束主瓣宽度和旁瓣电平,使得波束形成器干扰和噪声的输出功率最小。最后将该问题转化为凸优化中的二阶锥规划问题,并使用凸优化工具箱进行快速求解。仿真结果验证了该算法的有效性。     

零陷优化的稳健波束形成算法

传统的自适应波束形成算法在干扰方向出现扰动且期望信号导向矢量失配时,不仅无法持续有效地抑制干扰,而且会在期望信号方向产生零陷致使期望信号相消,算法性能严重下降。针对该问题,本文提出了一种零陷优化的稳健波束形成算法。该算法首先通过干扰导向矢量的左右旋转来展宽零陷,接着将采样数据向干扰子空间投影,并对干扰分量进行加权处理以增强采样数据中的干扰强度,加深干扰零陷,最后采用导向矢量不确定集约束算法保证期望信号的接收增益。计算机仿真结果表明:该算法能够有效展宽干扰零陷,并能够保证期望信号增益,具有较好的稳健性。      

存在阵列导引向量误差时的自适应波束形成算法

提出了一种存在阵列导引向量误差时的自适应波束形成算法。首先,文章提出了一个由接收信号协方差矩阵的噪声子空间和带有随机误差的期望信号导引向量构成的代价函数。然后基于非线性约束条件对此代价函数进行优化。新算法在期望信号导引向量存在误差的情况下仍能提供较好的输出SINR。仿真证明了新算法的有效性。     

采用余弦调制滤波器组的多径衰落信号子带合成

本文关注的是多路多径衰落信号的最佳合成问题。分集技术是对抗多径衰落的有效方法,其中采用最大比合并的方式是最佳的分集合成方案。但是传统分集技术中多径信号合成采用的是实数合成权值,不能使合成信号所有频率范围内的信号分量均取得最大信噪比。本文根据多径衰落信号的最佳合成结构,提出了一种子带合成算法。该算法采用余弦调制滤波器组将宽带衰落信号分为若干带宽较小的子带信号。通过对应子带的最佳合成与合成信号的完美重构,使得合成输出信号具有最佳的信噪比。仿真结果表明通过该子带合成算法可以有效提高合成信号的解调质量,降低解调的误符号率。      

强干扰下的盲波束形成算法

针对恒模波束形成算法在干扰信号功率较强的情况下不能收敛到期望信号的问题,提出了一种基于独立分量分析的盲波束形成算法。该算法应用独立分量分析的方法来分离阵列接收信号,通过期望信号来向约束分离向量使其收敛到期望信号,算法在强干扰信号情况下能够收敛到期望信号、对非恒模信号有效并且运算量适中。理论分析和仿真实验表明提出的算法在强干扰和幅相误差存在的情况下相比恒模算法性能优越。     

基于LMS算法的频域自适应均衡技术研究

在移动无线通信中,当信道环境随时间变化较快时,无线信号经过信道之后会发生非常严重的时延、衰减和畸变,即产生小尺度信道衰落。均衡技术通过对信道特性进行补偿,使得经过均衡后的信号尽可能接近期望信号。文章以GMSK系统为例,采用一种频域LMS自适应均衡算法,对接收信号进行补偿和均衡,并通过MATLAB仿真检验了这种均衡算法的效果。     

基于幅相控制的雷达-通信一体化系统稳健波形设计方法

为克服现有基于旁瓣电平控制的雷达-通信一体化系统对通信设备方向信息要求高的不足，同时有效提升雷达系统的通信信息传输能力，以多输入多输出（multiple input multiple output, MIMO）雷达为平台，研究了雷达-通信一体化系统发射加权矩阵的稳健设计方法。首先，为解决通信方向误差引起合成信号的畸变问题，以方向误差集内通信信号与期望信号的最差匹配性能为约束，构建了通信方向存在误差时的发射加权矩阵的稳健优化模型，并采用循环算法和凸优化方法对其进行求解；其次，利用通信方向多个合成信号的联合映射关系，提出了基于幅相控制的通信信息植入策略，由于利用了合成信号的幅相排列信息，相比传统方法能够更易实现通信信息的高速率传输；最后仿真实验表明了所提方法的有效性。     

一种存在相干信号时的稳健的最优波束形成算法

提出了一种新的存在相干信号时的最优波束形成算法。该方法首先利用二阶统计量信息估计合成方向矩阵，然后给出了一种根据期望信号的波迭方向寻找与之对应的合成方向矢量的方法．再据此估计最优权矢量。该方法与现有的同类算法相比计算量更小、鲁棒性更强。计算机仿真证明了算法的性能。     

MIMO雷达中OFD-LFM-PC波形空时优化设计

MIMO雷达中传统正交频分线性调频( OFD-LFM)波形的空域合成信号存在较高的自相关栅瓣。为了解决这一问题,本文在OFD-LFM波形上调制相位编码序列,构造新的正交频分线性调频相位编码(OFD-LFM-PC)波形以消除空域合成信号自相关栅瓣。由于相位编码的调制,使得OFD-LFM-PC波形空域合成信号的自相关栅瓣消除但整体旁瓣水平有所升高,同时,发射功率方向图非全向。为此,基于OFD-LFM-PC波形的时域特性和空域特性分析,本文建立了空时特性优化模型,对调制的相位编码矩阵和载波频率编码序列进行联合优化,并提出了一种嵌套遗传算法的粒子群算法求解该优化问题。仿真结果表明,所优化设计的OFD-LFM-PC波形能够保证发射功率方向图的全向性,并且空域合成信号具有良好的自相关性能。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.