一种简便有效的多孔硅后处理新方法

本文报道了一种简便有效的多孔硅（ＰＳ）后处理新方法，即在（ＮＨ４）２Ｓ／Ｃ２Ｈ５ＯＨ溶液中浸泡ＰＳ，并用紫外光辐照激发．后处理ＰＳ的光致发光（ＰＬ）强度约为未经处理的５倍；样品处理后的ＰＬ峰值９０ｍｉｎ内随激光连续激发时，在大气中呈现先指数衰减后线性增长，在真空（约１Ｐａ）中却呈现一直衰减到一个稳定值的新特点．通过样品的傅里叶变换红外吸收（ＦＴＩＲ）谱的测试与分析，表明后处理在样品表面产生了ＳｉＨ（Ｏ３）、Ｓｉ－Ｏ－Ｓｉ和Ｓｉ３Ｎ４三种提高ＰＳ的ＰＬ强度和稳定性的优质钝化膜     

硅表面清洗对热氧化13nm SiO_2可靠性的影响

实验研究表明热生长１３ｎｍ薄ＳｉＯ２的可靠性同氧化前硅表面清洗处理方法有很大关系．氧化前稀ＨＦ酸及ＨＦ／乙醇漂洗不会提高热氧化薄ＳｉＯ２的可靠性;氧化前用ＮＨ４ＯＨ／Ｈ２Ｏ２／Ｈ２Ｏ（０．０５∶２∶５）溶液清洗形成化学预氧化层对提高薄ＳｉＯ２可靠性很有效;用Ｈ２ＳＯ４／Ｈ２Ｏ２（３∶１）溶液清洗形成预氧化层的改善作用也较明显,在之前增加比例为０．０５∶２∶５或１∶２∶５的ＮＨ４ＯＨ／Ｈ２Ｏ２／Ｈ２Ｏ溶液清洗和稀ＨＦ酸漂洗效果更好．另外,薄栅介质抗电离辐射性能和抗热电子损伤能力同氧化前形成化学预氧化层的清洗     

经Al_2O_3与SiO_x钝化的多孔硅及其光致发光特性

在一定偏压下用ＡｌＣｌ３＋Ｃ２Ｈ５ＯＨ＋Ｈ２Ｏ混合液对多孔硅进行了后处理．经过处理的多孔硅与未经处理的多孔硅相比,其发光强且稳定．通过对样品进行红外吸收谱的测试和分析,指出在后处理样品表面形成的Ａｌ２Ｏ３与ＳｉＯｘ结构是多孔硅发光增强和稳定性得到提高的原因．     

多孔硅的氢化、氧化与光致发光

对于刚阳极氧化完的，阳极氧化后紧接着在Ｈ２Ｏ２中光照处理的及长期存放（１０个月）的三种多孔硅样品进行了持续激光照射，不断监视它们的光致发光（ＰＬ）与富利埃变换红外（ＦＴＩＲ）吸收光谱，并在最后对它们作了Ｘ射线光电子能谱（ＸＰＳ）测量，以确定它们所含氧化硅的情况．得出如下几条结论：（１）氢对多孔硅表面的钝化是不稳定的．（２）Ｓｉ—Ｈ键不是发光所必须的．（３）氧对多孔硅表面的钝化是稳定的，纳米硅周围氧化层的存在及其特性对于稳定的多孔硅可见光发射是至关重要的．对激光照射下多孔硅发光的退化提出了新的解释．     

多孔硅的形成与光致发光谱

介绍了用阳极氧化腐蚀形成多孔硅的工艺，并分析了它的微结构，实验测定了多孔硅光致发光谱（ＰＬ），由ＰＬ谱的峰值位于可见光区，不同于Ｓｉ的带隙能量；用纳米量子限制效应（Ｑ－ＣＥ），解释了多孔硅中进入量子线中电子和空穴能量增量为ΔＥｃ和ΔＥｖ，于是多了孔硅有效带宽成为Ｅ＝Ｅ。＋ΔＥ。而Ｅ。是Ｓｉ的带宽为ｌ．０８ｅＶ，ΔＥｃ和上ΔＥｖ分别为ｈ２／４ｍｅｑ２和ｈ２／４ｍｈｑ２，由此计算与实验结果一致。     

硅表面清洗对7nm热SiO_2栅介质可靠性的影响

实验研究了硅表面清洗方式对７ｎｍ热氧化ＳｉＯ２栅介质可靠性的影响．结果表明,稀ＨＦ酸漂洗后ＲＣＡ清洗时降低ＳＣ１（ＮＨ４ＯＨ／Ｈ２Ｏ２／Ｈ２Ｏ）温度对提高栅介质可靠性有利,但仍不如用ＳＣ２（ＨＣｌ／Ｈ２Ｏ２／Ｈ２Ｏ）或Ｈ２ＳＯ４／Ｈ２Ｏ２清洗效果好．稀ＨＦ酸漂洗后用Ｈ２ＳＯ４／Ｈ２Ｏ２清洗得到的栅介质不仅表现出优良的击穿电场分布特性和击穿电荷分布特性,抗热电子损伤能力也比较强     

Fe~＋和H~＋注入引起的Si／SiO_2界面重构现象

针对Ｓｉ－ＳｉＯ２过渡区对于离子注入较为敏感的特点，用１．２ＭｅＶ，剂量１×１０１０ｃｍ－２的Ｆｅ＋和Ｈ＋先后注入ＳｉＯ２－Ｓｉ样品，并用ＸＰＳ技术重点分析了Ｓｉ－ＳｉＯ２界面附近硅的化学结构、组分的变化。结果表明，在界面附近，除了Ｓｉ４＋，Ｓｉ０价态，还存在明显的Ｓｉ２＋价态。这和注入Ｈ＋产生的高温退火以及Ｓｉ—Ｓｉ键或Ｓｉ—Ｈ键的形成有关。     

注C~＋硅多孔结构的蓝光发射

对单晶硅进行Ｃ＋注入，注入能量为５０ｋｅＶ，注入剂量为１e１５～１e１７／ｃｍ２．在Ｎ２中经９５０℃退火１小时后，注入层形成尺寸为１～３μｍ的β－ＳｉＣ沉淀．进而采用电化学腐蚀方法将样品制成多孔结构．在紫外光激发下，样品可以发射强度较大的蓝光，光强是通常多孔硅的数倍以上，谱峰处于４８０ｎｍ和５０５ｎｍ附近．这一方法简便有效地实现了硅基材料的蓝光发射．     

蓝宝石上硅膜（SOS）肖特基结注入电流检测的电子自旋共振及Si／A…

我们用高灵敏的肖特基结注入电流检测磁共振方法对蓝宝石上外延硅膜进行了研究。实验观察到一种向同性非结称的磁共振谱，经拟合它由线宽１０＾－＾３Ｔ，ｇ值分别为２．００５５及２．０１２的二线组合而成，二线强度比３．７：１。前是硅悬挂键，后为非晶硅价态态共振。实验证该磁共振信号来自于Ｓｉ／Ａｌ２Ｏ３界面。     

K对H_2O在Si（001）表面上吸附的影响

在Ｓｉ（００１）－２×１表面上沉积碱金属Ｋ，接着在室温下吸附一定量的Ｈ２Ｏ，光电子谱证明：Ｋ的存在有促进Ｈ２Ｏ分解和使Ｓｉ氧化的作用．但其作用是局域在Ｋ原子附近的．     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.