一种新型低功耗CMOS压控振荡器采用电感偏置实现高性能的FoM

A novel voltage-controlled oscillator(VCO) topology with low voltage and low power is presented. It employed the inductive-biasing to build a feedback path between the tank and the MOS gate to enhance the voltage gain from output nodes of the tank to the gate node of the cross-coupled transistor. Theoretical analysis using timevarying phase noise theory derives closed-form symbolic formulas for the 1/f~2 phase noise region, showing that this feedback path could improve the phase noise performance. The proposed VCO is fabricated in TSMC 0.13 m CMOS technology. Working under a 0.3 V supply voltage with 1.2 m W power consumption, the measured phase noise of the VCO is –119.4 d Bc/Hz at 1 MHz offset frequency from the carrier of 4.92 GHz, resulting in an Fo M of 192.5 d Bc/Hz.     

A wideband 0.13 μm CMOS LC-VCO for IMT-advanced and UWB applications

This paper presents an LC voltage controlled oscillator(VCO) in a dual-band frequency synthesizer for IMT-advanced and UWB applications.The switched current source,cross-coupled pair and noise filtering technique are adopted in this VCO design to improve the performance of the phase noise,power consumption,voltage amplitude,and tuning range.In order to achieve a wide tuning range,a reconfigurable LC tank with 4 bits switch control is adopted in the core circuit design.The size of the entire chip with pad is 1.11 0.98 mm2.The test results show that the current dissipation of the VCO at UWB and IMT-Advanced band is 3 mA and 4.5 mA in a 1.2 V supply.The tuning range of the designed VCO is 3.86-5.28 GHz and 3.14-3.88 GHz.The phase-noise at 1 MHz frequency offset from a 3.5 GHz and 4.2 GHz carrier is-123 dBc/Hz and-119 dBc/Hz,respectively.     

Design of 10 GHz eight-phase voltage controlled oscillator in 90 nm CMOS

A novel 10 GHz eight-phase voltage-controlled oscillator(VCO) architecture applied in clock and data recovery(CDR) circuit for 40 Gbit/s optical communications system is proposed.Compared with the traditional eight-phase oscillator,a new ring CL ladder filter structure with four inductors is proposed.The VCO is designed and fabricated in IBM 90nm complementary metal-oxide-semiconductor transistor(CMOS) technology.Measurement results show the tuning range is 9.2 GHz～11.0 GHz and the phase noise of-108.85 dBc/Hz at 1 MHz offset from the carrier frequency of 10 GHz.The chip area of VCO is 500 μm× 685 μm and the power dissipation is 17.4 mW with the 1.2 V supply voltage.     

Design and realization of an ultra-low-power low-phase-noise CMOS LC-VCO

A fully integrated cross-coupled LC tank voltage-controlled oscillator(LC-VCO) using transformer feedback is proposed to achieve a low phase noise and ultra-low-power design even at a supply below the threshold voltage. The ultra-low-power VCO is implemented in the mixed-signal and RF 1P6M 0.18-μm CMOS technology of SMIC. The measured phase noise is-125.3 dBc/Hz at an offset frequency of 1 MHz from a carrier of 2.433 GHz,while the VCO core circuit draws only 640μW from a 0.4-V supply.The designed VCO can...     

基于SiGe BiCMOS技术的低功耗23G VCO

A 23 GHz voltage controlled oscillator(VCO) with very low power consumption is presented.This paper presents the design and measurement of an integrated millimeter wave VCO.This VCO employs an on-chip inductor and MOS varactor to form a high Q resonator.The VCO RFIC was implemented in a 0.18μm 120 GHz f_t SiGe hetero-junction bipolar transistor(HBT) BiCMOS technology.The VCO oscillation frequency is around 23 GHz,targeting at the ultra wideband(UWB) and short range radar applications.The core of the VCO circuit consumes 1 mA current from a 2.5 V power supply and the VCO phase noise was measured at around -94 dBc/Hz at a 1 MHz frequency offset.The FOM of the VCO is -177 dBc/Hz.     

A 1.0 V differential VCO in 0.13 μm CMOS technology

A differential complementary LC voltage controlled oscillator(VCO) with high Q on-chip inductor is presented.The parallel resonator of the VCO consists of inversion-mode MOS(I-MOS) capacitors and an on-chip inductor.The resonator Q factor is mainly limited by the on-chip inductor.It is optimized by designing a single turn inductor that has a simulated Q factor of about 35 at 6 GHz.The proposed VCO is implemented in the SMIC 0.13μm 1P8M MMRF CMOS process,and the chip area is 1.0×0.8 mm~2.The free-running frequency is from 5.73 to 6.35 GHz.When oscillating at 6.35 GHz,the current consumption is 2.55 mA from a supply voltage of 1.0 V and the measured phase noise at 1 MHz offset is -120.14 dBc/Hz.The figure of merit of the proposed VCO is -192.13 dBc/Hz.     

基于90nmCMOS工艺的低功耗宽带压控振荡器设计

A low power VCO with a wide tuning range and low phase noise has been designed and realized in a standard 90 nm CMOS technology. A newly proposed current-reuse cross-connected pair is utilized as a negative conductance generator to compensate the energy loss of the resonator. The supply current is reduced by half compared to that of the conventional LC-VCO. An improved inversion-mode MOSFET(IMOS) varactor is introduced to extend the capacitance tuning range from 32.8% to 66%. A detailed analysis of the proposed varactor is provided. The VCO achieves a tuning range of 27–32.5 GHz, exhibiting a frequency tuning range(FTR) of 18.4%and a phase noise of –101.38 d Bc/Hz at 1 MHz offset from a 30 GHz carrier, and shows an excellent FOM of –185d Bc/Hz. With the voltage supply of 1.5 V, the core circuit of VCO draws only 2.1 m A DC current.     

应用于K波段使用了一种新的可变电感的20~25.5G的压控振荡器

A novel transformer-type variable inductor is proposed to achieve a wide tuning range at frequencies as high as K band. The variable inductor is designed, and an intuitive model is built to analyze its performance by HFSS. A lot of mathematical analysis is done in detail. A VCO using the proposed variable inductor is designed with TSMC 0.13 μm CMOS technology for verification. The frequency tuning range of the VCO depends on the proposed variable inductor. The phase noise of the VCO depends on the quality of the LC tank （including the proposed variable inductor and varactors）. So a specific AMOS varactor is implemented to improve its quality factor. The VCO is simulated at three typical TSMC fabrication comers （TT, FF, SS） to predict its measure results. The post simulation results shows that the VCO achieves a 20-25.5 GHz continuous tuning range. Its phase noise results at 1 MHz offset are -108.4 dBc/Hz and -100.5 dBc/Hz respectively at the tuning frequencies of 19.6 GHz and 25.5 GHz. The VCO draws only 3 to 6 mA from a 1.2 V power supply.     

采用PMOS底部电流源的低功耗电流自调整压控振荡器

This paper presents the design and implementation of a current self-adjusted VCO with low power consumption. In the proposed VCO, a bottom PMOS current source instead of a top one is adopted to decrease the tail noise. A current self-adjusted technique without additional external control signals is taken to ensure the VCO starts up in the whole band while keeping the power consumption relatively low. Meanwhile, the phase noise of the VCO at the low frequency （high Cvar） can be reduced by the technique. The circuit is implemented in 0.18 μm CMOS technology. The proposed VCO exhibits low power consumption of 〈1.6 mW at a 1.5 V supply voltage and a tuning range from 11.79 to 12.53 GHz. The measured phase noise at 1 MHz offset from the frequency 11.79 GHz is-104.7 dBc/Hz, and the corresponding FOM is -184.2 dBc/Hz.     

应用于60-GHz无线通信的全差分锁相环频率综合器

A 40-GHz phase-locked loop(PLL) frequency synthesizer for 60-GHz wireless communication applications is presented. The electrical characteristics of the passive components in the VCO and LO buffers are accurately extracted with an electromagnetic simulator HFSS. A differential tuning technique is utilized in the voltage controlled oscillator(VCO) to achieve higher common-mode noise rejection and better phase noise performance. The VCO and the divider chain are powered by a 1.0 V supply while the phase-frequency detector(PFD)and the charge pump(CP) are powered by a 2.5 V supply to improve the linearity. The measurement results show that the total frequency locking range of the frequency synthesizer is from 37 to 41 GHz, and the phase noise from a 40 GHz carrier is –97.2 d Bc/Hz at 1 MHz offset. Implemented in 65 nm CMOS, the synthesizer consumes a DC power of 62 m W, including all the buffers.     

A low-power ka-band Voltage-controlled oscillator implemented in 200-GHz SiGe HBT technology

An integrated low-power low phase-noise Ka-band differential voltage-controlled oscillator (VCO) is developed in a 0.12-/spl mu/m 200-GHz silicon-germanium heterojunction bipolar transistor technology. The use of line inductors instead of transmission lines is demonstrated to be feasible in LC-tuned resonators for Ka-band applications. This VCO can operate from a supply voltage of 1.6-2.5 V. A single-sideband phase noise of -99 dBc/Hz at 1-MHz offset from the carrier frequency of 33 GHz is achieved, together with a VCO figure-of-merit of -183.7 dBc/Hz. The frequency tuning constant of the VCO in the linear regime is -0.547 GHz/V.     

A 580-μW 1.8–6 GHz Multiband Switched-Resonator SiGe VCO With 0.3-V Supply Voltage

This letter presents a fully integrated low-power low-voltage multiband switched-resonator differential cross-coupled voltage controlled oscillator (VCO) implemented in 0.18 SiGe-BiCMOS technology. The VCO operates with a supply voltage as low as 0.29 V, owing to the low knee-voltage provided by the technology, and consumes a total power of 580 muW. Utilizing a switched-resonator, the VCO covers a wide switched frequency range of 1.83-2.97 GHz and 4.36-6.17 GHz with measured phase noise of around 112.2 dBc/Hz with 0.29 V supply and 119.7 dBc/Hz with 1 V supply at 1 MHz offset. Since high-frequency bands experience higher phase noise than the low frequency bands, high- short microstrip line inductors have been used for the high-frequency bands. To the best of the authors' knowledge, the reported VCO achieves the widest switched frequency tuning range with lowest core supply voltage.     

一种L、S波段微机械压控振荡器

报道了一种中心频率为2GHz的电感电容(LC)压控振荡器,其谐振回路由微机械可变电容和键合线电感构成。微机械可变电容采用与集成电路兼容的表面微机械工艺制造,在2GHz时其Q值约为32.6,当调节电压从0V增大到12V时,电容量变化范围为25%。通过键合技术将微机械可变电容与有源电路集成在一起,制备了MEMSVCO器件,测试结果表明,载波频率为2.004GHz时,VCO的单边带相位噪声为-103.5dBc/Hz@100kHz,输出功率为12.51dBm。调频范围约为4.8%。     

A Dual-Band CMOS Voltage-Controlled Oscillator Implemented With Dual-Resonance LC Tank

A new fully integrated, dual-band CMOS voltage controlled oscillator (VCO) is presented. The VCO is composed of n-core cross-coupled Colpitts VCOs and was implemented in 0.18 $mu$m CMOS technology with 0.8 V supply voltage. The circuit allows the VCO to operate at two resonant frequencies with a common LC tank. The VCO has two control inputs, one for continuous control of the output frequency and one for band switching. This VCO is configured with 5 GHz and 12 GHz frequency bands with differential outputs. The dual-band VCO operates in 4.78–5.19 GHz and 12.19–12.61 GHz. The phase noises of the VCO operating at 5.11 and 12.2 GHz are ${-}117.16$ dBc/Hz and ${-}112.15$ dBc/Hz at 1 MHz offset, respectively, while the VCO draws 3.2/2.72 mA and 2.56/2.18 mW consumption at low/high frequency band from a 0.8 V supply.      

Low-phase-noise LC quadrature VCO using coupled tank resonators ina ring structure

The concept of coupled resonators is employed in a ring VCO structure to reduce the phase noise. This architecture allows the design of low-phase-noise voltage controlled oscillators (VCOs) using integrated low-Q inductors. Quadrature differential outputs are also realized in this design. Two monolithic LC tanks are coupled together to implement a transimpedance resonator with an effective Q close to twice that of a single tank. In addition, the coupled tank's transimpedance resonator provides 90° phase shift. Four such stages are cascaded in a ring structure to provide I-Q differential outputs, and to further reduce the phase noise. A prototype of the VCO is built in a 0.35-μm CMOS technology. The measured phase noise is -122 dBc/Hz at 600-kHz offset from 1.93 GHz. The VCO draws 9.2 mA from a 3-V supply, and occupies a chip area of 1.1×1.1 mm²     

新型复合沟道Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMT低相位噪声微波单片集成压控振荡器

设计并研制了一种新型复合沟道Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMT(CC-HEMT)微波单片集成压控振荡器(VCO),且测试了电路的性能.CC-HEMT的栅长为1μm,栅宽为100μm.叉指金属-半导体-金属(MSM)变容二极管被设计用于调谐VCO频率.为提高螺旋电感的Q值,聚酰亚胺介质被插入在电感金属层与外延在蓝宝石上GaN层之间.当CC-HEMT的直流偏置为Vgs=-3V,Vds=6V,变容二极管的调谐电压从5.5V到8.5V时,VCO的频率变化从7.04GHz到7.29GHz,平均输出功率为10dBm,平均功率附加效率为10.4%.当加在变容二极管上电压为6.7V时,测得的相位噪声为-86.25dBc/Hz(在频偏100KHz时)和-108dB/Hz(在频偏1MHz时),这个结果也是整个调谐范围的平均值.据我们所知,这个相位噪声测试结果是文献报道中基于GaN HEMT单片VCO的最好结果.     

30 GHz transformer-coupled and reused injection-locked VCO/divider in 0.13 μm CMOS process

A 30 GHz VCO, using a transformer as the tank load and inter-stage coupling of the divider, is proposed such that the inductive load of the buffer between the VCO and the divider is eliminated and therefore chip area and power consumption can be reduced. The transformer is further reused by feedback to enhance the output swing of the VCO. Phase noise performance of the VCO can also be improved by the injection-lock mechanism from the reverse coupling of the divider. Measured results show that output phase noises of the VCO with (without) the divider are -125.1 (-118.6) dBc/Hz at 10 MHz offset frequencies from around 29.2 GHz carrier frequency. The power consumption of the VCO alone is 2.32 mW, while that of the VCO/divider increases only to 4.65 mW.     

基于对称螺旋型电感和差分二极管的2.4GHz CMOS正交输出压控振荡器

提出了一种产生2.4GHz正交本地振荡信号的方法.它将LC-VCO和两级环路振荡器两种结构组合起来以实现正交输出的低相位噪声压控振荡器.LC网络是由在片对称螺旋型电感和差分二极管组成的.详细论述了VCO原理及其噪声性能.该电路已经用0.25μm单层多晶、五层金属N阱CMOS数字工艺制作.测量结果表明:它可以提供正交的本地振荡信号,其振荡频率可以在300MHz的范围内调节,当仅对差分输出振荡信号的一端进行测试时,振荡频率为2.41GHz时,去偏移中心为600kHz时的相位噪声为-104.33dBc/Hz.而且,它能在很低的电源电压下工作,功耗也很低,所以,它在集成收发机中将得到广泛的应用.     

Noise property of a quadrature balanced VCO

A quadrature balanced voltage controlled oscillator (B-VCO) with current source switching is proposed and analyzed. This letter shows analytically that the switching improves the phase noise. A switched transistor is also used as a coupling transistor to generate quadrature signals without degrading the phase noise. To investigate the effect of quadrature coupling on the phase noise, a single B-VCO and a quadrature B-VCO are implemented with identical components in an 0.18-/spl mu/m CMOS process. Both VCO cores draw about 8.8mA under a low bias voltage of 1.8V. The oscillation frequencies are 10.21GHz and 10.81GHz. The measured phase noises of the single at an offset frequency of 1MHz VCO is -114.83 dBc/Hz while that of the quadrature VCO is -116.67 dBc/Hz. The quadrature B-VCO is superior to the single B-VCO with respect to phase noise and oscillation frequency in the X-band.