纳米掺锑氧化锡粉末的制备及表征

以 SnCl4·5H2O和SbCl3乙醇溶液为原料,采用离子交换除氯水解法得到无氯离子的掺锑氢氧化锡胶体沉淀,以正丁醇作脱水剂对胶体进行共沸干燥处理,所得的掺锑氢氧化锡干微粉经热处理后得到了四方形金红石结构的掺锑氧化锡纳米粉末.用TG-DTA、IR、BET、BJH、XRD、TEM等方法对粉体的结构、物相、形貌进行了表征.     

云母基浅色导电粉末的制备工艺

用化学共沉淀法制备一种在云母表面包覆一层掺杂P的SnO2 Sb2O3 超细浅色导电粉末,对制备工艺过程进行了研究。探讨了影响导电粉末性能的几个主要工艺参数,并通过正交实验对制备工艺条件作了进一步研究,得到优化工艺条件:包覆率为 100%,m(SnCl4·5H2O)∶m(SbCl3 ) =5∶1,加料时间为 3. 5—4. 0h,pH=2. 5—3. 5。检测结果表明粉末体积电阻率小于 40Ω·cm,细度为微米级,颜色浅灰白。     

锑掺杂二氧化锡纳米粉体的制备及性能

以SnCl4·5H2O和SbCl3为主要原料,采用化学共沉淀法制得了纳米级的高导电性能的锑掺杂二氧化锡(ATO)超细粉体.研究了制备工艺对ATO粉体粒径和导电性能的影响,并探讨其影响机理,得到最佳工艺参数.运用热重-差热(TG-DTA)、X-射线衍射(XRD)、透射电镜(TEM)等测试方法对ATO粉体进行表征,并将试验产品与国内市场的同类产品性能进行了对比.     

水热法合成ATO纳米粉体的研究

以SnCl4·5H2O和SbCl3为锡源和锑源,采用水热法制备锑掺杂氧化锡（ATO）纳米粉体,分析了锑掺杂量、水热时间、水热温度对ATO纳米粉体的影响。研究结果表明：在180℃的温度下水热反应16 h后,Sb元素全部固溶进SnO2的晶格,且分布比较均匀,ATO颗粒径在10 nm左右;粉体的晶粒径随锑掺杂量的增加而逐渐减小,但随水热时间的延长而逐渐增大;随着水热温度的升高,所得粉体由无定形向晶形转变,粉体的结晶性变好。     

纳米导电二氧化钛的研制

采用化学共沉淀的方法在纳米二氧化钛表面包覆SnO2 掺杂Sb2 O5导电层 ,制得纳米导电二氧化钛。讨论了水解 pH值、反应温度、SnO2 的包覆率、m(SnCl4 ·5H2 O) /m(SbCl3)、反应时间和热处理温度对纳米导电二氧化钛体积电阻率的影响。表征了纳米导电二氧化钛及其粒度分布     

醇盐水解—水热法制备纳米ATO超细粉体及其导电性能研究

实验以SnCl4.5H2O作为锡的阳离子源,以SbCl3或SbCl5为锑的阳离子源,以醇盐水解—水热法制得了纳米级的高导电性能的ATO超细粉体。采用热重—差示扫描量热(TG-DSC)、X射线衍射(XRD)、电阻率测定等测试方法系统研究了锑掺杂量、反应pH值、热处理等对ATO粉体粒径和导电性能的影响。实验结果表明:本实验制得的ATO超细粉体样品粒径在10 nm左右,并且超细粉体的分散性能良好,导电性优于国内同类产品。     

化学共沉淀法制备纳米铋掺杂氧化锡

以SnCl4.5H2O和Bi(NO3)3.5H2O为原料,氨水为沉淀剂,采用化学共沉淀法制备了铋掺杂氧化锡(BTO)纳米粉体,考察了反应温度、滴定终点pH、铋掺杂量、煅烧温度和分散剂PEG-600对所得的纳米BTO粉体物相、晶粒度和形貌的影响,对粉末的前驱体进行综合热分析(TG-DTA),用X射线衍射(XRD)、扫描电镜(SEM)对产物的结构和形貌进行表征,得到共沉淀法制备纳米BTO粉体的最佳条件:反应温度60℃,滴定终点pH=3,煅烧温度600℃;该条件下制得BTO粉体的电阻率最小为3.48Ω.cm。     

热处理工艺对纳米级掺锑SnO2导电粉结构和性能的影响

SnO2超细粉用作透明导电膜和导电涂料具有广阔的应用前景.以SnCl4·5H2O和SbCL3为原料,采用共沉淀法制得了纳米级的SnO2超细粉.运用差示扫描量热法-失重分析(DSC-TG)、X射线衍射(XRD)、透射电镜(TEM)和紫外可见光光谱分析(UV)等观测手段对微粉末进行了表征,比较系统地研究了热处理工艺(温度、时间)对粉末颗粒度和电阻的影响规律,探讨了掺锑SnO2导电粉的显色特性.     

水性三聚氰胺树脂抗静电涂层的制备

在三聚氰胺甲醛树脂中掺杂结晶SnCl4·5H2O，增加树脂的抗静电性。制备出水性抗静电涂层，测定表面电阻，并通过红外光谱和热重差热对涂层进行表征。结果表明，三聚氰胺甲醛树脂本身不具备导电性，结晶SnCl4·5H2O的添加使三聚氰胺甲醛树脂导电性大大增加，水分的吸收有利于导电性的提高。20g40％的三聚氰胺甲醛树脂溶液中添加17．8gSnCl4·5H2O形成树脂溶液制备的涂层，在温度60℃，湿度为40％环境中干燥处理4h，涂层表面电阻率可低至1．39×10^7Ω·cm，在室温空气环境中电阻率可降低至8．80×10^6Ω·cm。     

化学共沉淀法制备纳米铋掺杂氧化锡的影响因素研究

以SnCl4.5H2O和Bi(NO3)3.5H2O为原料,氨水为沉淀剂,采用化学共沉淀法制备了铋掺杂氧化锡（BTO）纳米粉体,研究了反应温度、滴定终点pH值、铋掺杂量,煅烧温度和分散剂PEG-600对所得的纳米BTO粉体物相、晶粒度和形貌的影响,对粉末的前驱体进行综合热分析（TG-DTA）,用X-射线衍射（XRD）,扫描电镜(SEM)对产物的结构和形貌进行表征,得到共沉淀法制备纳米BTO粉体的最佳条件：反应温度60℃,滴定终点pH值为3,煅烧温度600℃;该条件下制得BTO粉体的电阻率最小为3.48Ω•cm。     

掺锑二氧化锡超细粉水分散体系的制备

如何使用作透明导电涂料的掺锑二氧化锡超细粉高度分散是一个重要问题.本实验研究了共沉淀法制备的掺锑二氧化锡超细粉在水中高度分散体系的形成条件,并讨论了球磨时间及pH值对分散体系的影响,制备了高稳定性的掺锑二氧化锡超细粉水分散体系.     

掺锑氧化锡纳米晶体的制备及性能研究

以SnCl4.5H2O和SbCl3乙醇溶液为原料,用离子交换除氯水解法制备得到无氯离子的前驱体掺锑氢氧化锡胶体沉淀。采用了乙酸异戊酯有机溶剂作脱水剂以消除掺锑氢氧化锡胶体干燥过程中硬团聚的形成,并和常用的正丁醇共沸溶剂进行了粉体性能的比较。用BET、XRD和TEM等方法对前驱体和掺锑氧化锡纳米粉体进行表征。结果表明,乙酸异戊酯溶剂比正丁醇溶剂更有效防止了粉体干燥过程中硬团聚的形成;将乙酸异戊酯干燥所得掺锑氢氧化锡干粉经热处理后得到了高比表面积的掺锑氧化锡纳米粉体,并对晶粒的生长过程进行了研究。     

锑掺杂氧化锡包覆氧化硅导电粉的制备及电性能

以氧化硅粉体为载体,用非均匀成核法制备了锑掺杂氧化锡(antimony-doped tin oxide,ATO)包覆氧化硅导电粉.用电阻测试仪、场发射扫描电镜和能谱仪对粉体进行了表征.结果表明:包覆物加入量由二氧化硅用量的12.5%增加到100%时,包覆层厚度也从110 nm增加到600nm.ATO包覆氧化硅粉体的电阻率随处理温度升高的变化趋势与同条件下制备的ATO基本一致,其中包覆物加入量为100%,75%,50%的ATO包覆氧化硅粉在500～1200℃热处理后的电阻率低于200Ω·cm,1 100℃热处理后的25%包覆物加入量粉体的电阻率仅为99.9 Ω·cm.包覆物加入量为12.5%的包覆粉体的电阻率由1 100℃处理后的120.6 Ω·cm上升到1 200℃处理后的超过20 MQ·cm,这是因为包覆层较薄,在高温处理过程中包覆层上颗粒长大并收缩而使包覆层受到破坏.     

PANI/TIO复合材料的制备及其在聚氨酯涂料中的应用

采用原位聚合的方法在锑掺杂氧化锡/氧化钛复合材料（TIO）上包覆一层完整的聚苯胺（PANI）膜,成功制备了PANI/TIO复合材料,将其作为水性聚氨酯涂料的填料,制备了水性聚氨酯导电涂料。利用X射线粉末衍射、透射电镜、红外光谱等分析方法对复合材料进行表征,利用涂层机械性能测试对导电涂料进行了测试。同时得到了制备PANI/TIO三元复合材料的最佳工艺条件：苯胺（An）包覆量为15%、m(An)/m[磺基水杨酸（SSA）]=0.4、m(An)/m[过硫酸铵（APS）]=3。在最佳工艺条件下,得到的PANI/TIO复合材料体积电阻率为15.3Ω·cm。实验结果表明：当填料比为15%时涂层机械性能最佳,硬度为2B、耐冲击力为50 cm、附着力为1级、涂层表面电阻为3.56×105Ω/m2,该导电涂料有较好的应用前景。     

Synthesis and characterization of Sb–SnO2/kaolinites nanoparticles

In this paper, we reported the synthesis of composite conductive powders of antimony-doped tin oxide (Sb–SnO₂) coated onto kaolinite. Structure and morphology of the samples were systematically characterized by X-ray diffraction (XRD), scanning electronic microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM (HRTEM), Fourier transform infrared (FTIR) and X-ray photoelectron spectrum (XPS). The results showed that Sb–SnO₂ nanoparticles (< 10 nm) were successfully coated as thin layers on the surface of kaolinite. The antimony-doped tin oxide/kaolinite (ATK) composites retained the flake morphology like the original kaolinite and had a resistivity of 273.2 Ω·cm. Sb–SnO₂ layers were proved to attach to the kaolinite surface via the Sn–O–Si or Sn–O–Al bonds. The growth mode of Sb–SnO₂ layers onto the kaolinite was investigated.     

Piezoresistivity in Polymer-Ceramic Composites

Composite materials composed of randomly dispersed semiconducting ceramic particles in an insulating polymer matrix show a pronounced change in resistivity with pressure. Different amounts of iron oxide (Fe₃O₄) powder and antimony-doped tin oxide (SnO₂:Sb) powder were dispersed in an epoxy polymer matrix to form pressure-sensitive composites. In each family of materials, an insulator-to-semiconductor transition is observed in agreement with percolation theory. Composites within a certain range of filler content showed substantial piezoresistive effect under both uniaxial and hydrostatic pressure in which sensitivity is controlled by the choice of filler material and the volume fraction. The effect of temperature on the piezoresistance effect was also examined. Piezoresistors made from Fe₃O₄ composites showed larger temperature changes than those filled with Sb-doped SnO₂.     

Electrochemistry of a new carbon-rich fluorine-doped tin oxide (CFTO) material as a powder electrode in chloride electrolytes

The electrochemical behavior of a conductive carbon-rich fluorine-doped tin oxide (CFTO) powder synthesized via the sol-gel process was investigated by studying the chloride oxidation reaction in aqueous media with the help of a cavity microelectrode (CME) without any binding additive. This new electroactive compound was found to be very efficient with respect to the chloride-chlorine reaction which was reversible in the 2-7 pH range. The CFTO powder electrode was characterized by linear sweep voltamperometry and electrochemical impedance measurements. On the basis of numerical simulations, impedance spectra were interpreted by considering a porous electrode behavior with a coupled concentration and potential axial gradients. The experimental data were quantitatively accounted for by considering the parallel combination of a number of cylindrical pores. On the CFTO powder, the chloride oxidation mechanism was simply described by a single electron exchange, in accordance with a Volmer-Tafel mechanism.     

Improved light extraction of InGaN/GaN blue LEDs by GaOOH NRAs using a thin ATO seed layer

ABSTRACT: We investigated the effect of gallium oxide hydroxide (GaOOH) nanorod arrays (NRAs) on the light extraction of InGaN/GaN MQW blue light-emitting diodes (LEDs). The GaOOH NRAs were prepared on the indium tin oxide electrode (ITO) layer of LEDs by the electrochemical deposition method. The GaOOH NRAs with preferred orientations were grown on the ITO surface by sputtering a thin antimony-doped tin oxide (ATO) seed layer, which enhances heterogeneous reactions. The surface density and coverage were also efficiently controlled by the different growth voltages. For the LEDs with GaOOH NRAs grown at -2 V, the light output power was increased by 22% without suffering from any serious electrical degradation and wavelength shift, compared to the conventional LEDs.     

制备工艺对ATO纳米棒形貌结构的影响

以SnCl4·5H2O和SbCl3为原料,采用化学共沉淀法成功制备了高含量棒状纳米级掺锑二氧化锡(ATO)导电粉体,研究了掺锑量、热处理温度及热处理时间对纳米棒形貌结构的影响。初步探讨了ATO纳米棒的形成机理,并用热重分析(TG)、透射电镜(TEM)、X-射线衍射(XRD)、比表面法(BET)对棒结构进行了表征。     

新型耐高温抗静电涂料的制备

以酸性磷酸铝无机黏结剂为成膜物,电熔石英粉为耐高温填料,OP-10为非离子型表面活性剂,氧化镁和氧化锌为固化剂,二氧化锡为导电填料,制备了新型耐高温抗静电涂料。试验结果表明,反应时间为60 min,耐高温填料的加入量为30%,表面活性剂的加入量为1%,固化剂的加入量为0.5%~0.8%,增稠剂的加入量为2.1%~2.7%,导电填料的加入量为1%~2%时,其耐高温性能可达1000℃(5min)。