共查询到19条相似文献,搜索用时 140 毫秒
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叙述了生长重掺锑单晶硅的必要性,困难性和克服这些困难的方法;还叙述了生长重掺锑单晶硅时固-液界面对晶体生长的影响以及如何获得理想的界面形状,介绍了一些典型的晶体生长参数和掺杂方法;讲座了生长重掺锑单晶硅时的组分过冷以及避免的方法.还讨论了如何提高重掺锑单晶硅的晶体完整性,指出了生长重掺锑单晶硅的关键在于找到形成稳定固--液界面的条件,防止组分过冷的发生,为此,要使用较小的晶体生长速度,在较大的纵向温度梯度热场中生长晶体,此外,应在满足晶体电阻率要求的前提下,尽量使掺入锑量控制在最低限度. 相似文献
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介于多晶硅和单晶硅之间的准单晶生长技术逐渐被人们所重视。通过分析单晶硅晶体生长和多晶硅晶体生长的特点,在自主研发的多晶硅铸锭的基础上,介绍了如何通过设备改进和工艺改进,生长出晶体结构优于多晶硅的准单晶。准单晶制作的电池片光伏转换效率显著高于多晶硅。 相似文献
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针对直径检测及控制技术向大直径化硅棒发展的需求,设计一种低成本.功能适中的晶体生长控径系统。该系统以ARM9系列的S3C2440为核心,基于Linux嵌入式操作系统设计一种图像处理方法,根据亚像素原理计算出硅棒直径,并为上位机提供具有特定电平的模拟信号,从而控制直拉单晶硅生长速度,使系统实现测量数据可读化。实验表明,该系统能够很好地解决图像处理问题,图像处理的准确率满足直径检测系统的要求,且实现简单,成本较低.特别适合于对精度要求较严格的检测系统。 相似文献
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针对直径检测及控制技术向大直径化硅棒发展的需求,设计一种低成本,功能适中的晶体生长控径系统.该系统以ARM9系列的S3C2440为核心.基于Limix嵌入式操作系统设计一种图像处理方法,根据亚像素原理计算出硅棒直径,并为上位机提供具有特定电平的模拟信号,从而控制直拉单晶硅生长速度,使系统实现测量数据可读化.实验表明,该系统能够很好地解决图像处理问题,图像处理的准确率满足直径检测系统的要求,且实现简单,成本较低,特别适合于对精度要求较严格的检测系统. 相似文献
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在KX260晶体生长系统上装备24英寸(1英寸=2.54 cm)热场,装料量为120 kg。采用5种不同的初始埚位(-50,-60,-70,-80,-90 mm),其他工艺参数相同的晶体生长工艺,拉制了5根200 mm、p型、晶向〈100〉、电阻率2Ω.cm的单晶硅棒。待硅棒冷却后,取片进行少子寿命和氧含量的测试,根据所得数据分析不同初始埚位对少子寿命的影响。由分析结果得出结论:随着初始埚位的提升,单晶硅棒少子寿命逐渐降低。结合实际生产利润及硅片品质需要,最后得到最适合晶体生长的初始埚位是-70 mm。 相似文献
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为探究毫秒脉冲激光辐照单晶硅的热损伤规律和机理,利用高精度点温仪和光谱反演系统对毫秒脉冲激光辐照单晶硅的温度进行测量。分析温度演化过程,研究毫秒脉冲激光对单晶硅热损伤全过程的温度状态和对应的损伤结构形态。研究表明:脉冲宽度固定时,激光诱导的单晶硅的峰值温度随能量密度的增加而增加;当脉冲宽度在1.5~3.0 ms之间时,温度随脉冲宽度的增加而降减小。温度上升曲线在熔点(1 687 K)附近时出现拐点,反射系数由0.33增加为0.72。在气化和凝固阶段,出现气化和固化平台期。单晶硅热致解理损伤先于热致熔蚀损伤,在低能量密度激光作用条件下,应力损伤占主导地位,而在大能量密度条件下,热损伤效应占主导地位。损伤深度与能量密度成正比,随脉冲个数增加迅速增加。 相似文献
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Lin Shichang Zhang Yansheng 《电子科学学刊(英文版)》1996,13(2):170-177
An experiment for preparation of SOI films by using the scanning electron beam to modify the polycrystalline silicon on SiO2 is presented. This method takes on the epitaxial lateral growth of liquid phase with the crystallon to form monocrystalline silicon films. The effects of the beam power density, scanning velocity, temperature of the substrates and the construction of samples on the quality of the monocrystalline silicon films were discussed. A good experimental result has been obtained, the monocrystalline silicon zone is nearly 200×25μm2. 相似文献
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In this study, an electrolytic polishing experimental system was developed to obtain a uniform, flat-surfaced monocrystalline silicon with specific crystallographic planes. Several key factors reflecting specific electrolytic polishing on monocrystalline silicon with specific crystallographic planes were summarized. These factors, including electrolyte, conduction mode, Schottky barrier, semiconductor body resistance, and unidirectional conductivity, were analyzed comprehensively through energy spectrum analysis, theoretical modeling, and potential simulation. The effects of electrolytic polishing process were obtained, and corresponding solutions were proposed. Finally, the electrolytic polishing experiment for monocrystalline silicon with specific crystallographic planes was conducted. A uniform, flat-surfaced monocrystalline silicon with no metamorphic layer was then obtained. The flatness error of the center area was less than 0.201 µm. Furthermore, the crystallographic planes of monocrystalline silicon wafers showed no change. 相似文献
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在点云反求中,采取分段样条插值法拟合曲线,是非常实用和有效的处理方法.应用插值法的目的是使样条函数为低次多项式,确保拟合的曲线光滑连接.设计中,选取了具有优良数学特征的三次样条插值法,利用虚拟仪器技术,编写算法,使曲线通过所有扫描点后快速生成并显示.这种技术及方法可广泛应用于曲线设计与反求之中. 相似文献
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A stochastic framework for recursive computation of spline functions--Part I: Interpolating splines 总被引:1,自引:0,他引:1
《IEEE transactions on information theory / Professional Technical Group on Information Theory》1978,24(1):45-50
The method for exploiting stochastic smoothing techniques to develop dynamical recursive algorithms for the deterministic problem of d interpolation (optimal curve fitting) is shown. A reproducing kernel Hilbert space approach is used to develop an explicit correspondence between spline interpolation and linear least-squares smoothing of a particular zero-mean random process. This random process is shown to be the output of a white-noise-driven dynamical system whose parameters and initial conditions are fixed by the functional form chosen for the spline. A recursive algorithm is then derived for this (nonstandard) smoothing problem, and thus also for the original spline interpolation problem. 相似文献
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《IEEE instrumentation & measurement magazine》2001,4(4):46-51
In the last two columns, we looked at one approach to approximation, interpolating a set of points by piecewise-cubic polynomials forming a cubic spline. We now look at another approach - one that involves fitting a curve to a set of data without restricting that curve to coincide with the data points. Our focus is on least-squares approximation, and, in particular, least-square fitting of polynomials to data 相似文献
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V.D. Cammilleri V. Yam F. Fossard C. Renard D. Bouchier Y. Zheng P.F. Fazzini F. Houdellier M. Hÿtch 《Materials Science in Semiconductor Processing》2008,11(5-6):214
The lateral growth of Ge on, both, chemically and thermally formed silicon oxide layers, from nanoscale silicon seed is studied. We have developed a method using standard local oxidation of silicon to create well-localized nanoscale silicon seeds that enable to grow Ge on thick thermal silicon oxide. The germanium growth starts selectively from the silicon seed lines and proceeds by wetting the SiO2 layer. Analysis by high-resolution transmission electron microscopy have shown that Ge layers grown above silicon oxide were perfectly monocrystalline and are free of defect. The only detected defects are situated at the Ge/Si interface. 相似文献
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利用化学腐蚀方法,在低阻值p型单晶硅片上制备了火山口形、准纳米孔柱形和多孔形三种形貌的多孔硅薄膜。以空气为参考基准,0.2~10 THz时域光谱显示,火山口形样品在0.2~6 THz的透射强度下降了约1/2,另外两种样品强度下降了约1/5。火山口形、准纳米孔柱形样品呈现低通滤波特性,多孔形样品呈现级联带通特性。准纳米孔柱形样品截止频率比火山口形样品和多孔形样品提高了3 THz左右。样品的频谱出现多处吸收峰,峰的位置与薄膜的几何结构尺寸有关。实验结果表明:多孔薄膜的形状和几何结构尺寸改变了p型单晶硅的太赫兹波段透射强度、吸收频率和截止,该材料可以成为从太赫兹波段至可见光波段的宽频段探测材料和调制材料。 相似文献