Estimation of Electrical Parameters of OD Organic Semiconductor Diode from Measured I‐V Characteristics

In this paper the effect of temperature on the electrical properties of organic semiconductor disperse orange dye 25 (OD) have been examined. Thin films of OD have been deposited on In₂O₃ substrates using a centrifugal machine. DC current‐voltage (I‐V) characteristics of the fabricated devices (Al/OD/In2O3) have been evaluated at varying temperatures ranging from 40 to 60°C. A rectification behavior in these devices has been observed such that the rectifying ratio increases as a function of temperature. I‐V characteristics observed in Al/OD/In2O3 devices have been classified as low temperature (≤ 50°C) and high temperature characteristics (approximately 60°C). Low temperature characteristics have been explained on the basis of the charge transport mechanism associated with free carriers available in OD, whereas high temperature characteristics have been explained on the basis of the trapped space‐charge‐limited current. Different electrical parameters such as traps factor, free carrier density, trapped carrier density, trap density of states, and effective mobility have been determined from the observed temperature dependent I‐V characteristics. It has been shown that the traps factor, effective mobility, and free carrier density increase with increasing values of temperature, whilst no significant change has been observed in the trap density of states.     

CuPc based organic--inorganic hetero-junction with Au electrodes

In present work, a hetero-junction of n-silicon (n-Si) with copper phthalocyanine (CuPc) has been fabricated. The current-voltage characteristics were investigated to explain the rectification and conduction mechanism. The effect of temperature and humidity on electrical properties of n-Si/CuPc hetero-junction has also been investigated. The characteristics of the junction have been observed to be temperature and humidity dependent so it is suggested that this junction can be used as temperature and humidity sensor.     

CuPc based organic-inorganic hetero-junction with Au electrodes

A hetero-junction of n-silicon (n-Si) and copper phthalocyanine (CuPc) has been fabricated. The cur-rent-voltage characteristics were investigated to explain the rectification and conduction mechanism. The effect of temperature and humidity on the electrical properties of n-Si/CuPc hetero-junction has also been investigated. The characteristics of the junction have been observed to be temperature and humidity dependent, so it is suggested that this junction can be used as a temperature and humidity sensor.     

Temperature Characteristics of BJMOSFET

The resolution expression for the temperature dependence of the current and threshold voltage is deduced as well as the analysis of temperature characteristics of BJMOSFET. Equivalent circuit of analysis and simulation has been established for the BJMOSFET temperature characteristics. By using the general circuit simulation software of PSpice9 and computer simulation, characteristic graphs of the BJMOSFET output characteristic, transient characteristic and amplitude-frequency characteristic with temperature variation are obtained. The results accorded very good with theoretical analysis and proved that BJMOSFET has better temperature characteristics than traditional MOSFET.     

CMOS数字集成电路的高温电学性能分析

本文给出了ＣＭＯＳ倒相器的高温等效电路，分析了它的高温直流传输特性和瞬态特性，文章还讨论了ＣＭＯＳ静态数字集成电路高温电学特性的分析方法。本文提出了的ＣＭＯＳ数字集成电路的高温学特性模型和实验结果相接近。     

Some electrical properties of polyaniline/p-Si/Al structure at 300 K and 77 K temperatures

The electrical characterization of the PANI/p-Si/Al structure has been investigated by using current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics. Especially, some characteristics have been compared with the 300 K temperature characteristics at liquid nitrogen temperature. The characteristic parameters of the structure such as barrier height, ideality factor and series resistance have been determined from the current-voltage measurements. According to the C-V characteristics, the higher values of capacitance at low frequencies and high temperature have been attributed to the excess capacitance resulting from the interface states in equilibrium with the p-Si, which can follow the a.c. signal.     

BJMOSFET温度特性分析及计算机模拟

对兼有双极型和场效应型两种器件特点的双极MOS场效应晶体管(BJMOSFET)的电流和阈值电压的温度特性进行了详细分析．推导出它们随温度变化率的解析表达式。建立BJMOSFET的直流小信号模拟分析等效电路和频率特性模拟分析等效电路,采用通用电路仿真软件PSpice9,对BJMOSFET的输出特性、瞬态特性和幅频特性随温度的变化进行了计算机模拟,得到了随温度变化的特性曲线,并且理论分析与计算机模拟取得了一致的结果。相对传统MOSFET,证明了BJMOSFET具有较好的温度特性。     

4英寸锑化铟晶体自动生长控制研究与实现

锑化铟(InSb)晶体是一种中波红外光电子材料,在工程实践领域已得到广泛应用。但锑化铟晶体受温场结构和其固有特性的影响,在生长过程中表现出对温度(功率)变化的敏感性和滞后性相矛盾的特点,导致在生长过程中自动控制较难。该文开展了针对锑化铟晶体对温度(功率)变化滞后性和敏感性的工艺研究与实验,分析了滞后时间与功率改变量之间的关系,通过算法解决了相应的问题,最终实现了4英寸(1英寸=2.54 cm)锑化铟晶体自动化控制生长。     

螺旋桨无人机三维流场数值模拟

采用流体动力学数值模拟方法对无人机及其螺旋桨发动机三维流场进行数值计算,获取了飞机的整体温度分布、螺旋桨发动机高温排气温度、浓度三维分布,为无人机红外辐射特性、空气动力学特性的计算与分析提供数据支撑。     

高温微电子学—Ⅰ：硅器件的高温特性研究

本文详细介绍了硅器件的高温理论以及制作的进展,分析了MOSFET的高温特性和失效模式,指出了改善MOSFET高温性能和提高上限温度的方法。     

850 nm Implant-confined VCSEL Temperature Characteristics

The temperature characteristics of VCSEL using proton implantation are described, compared with its edge-emitting counterpart. Implant-confined VCSEL operation has been realized up to 120℃. These records of high operating temperature are caused by high characteristic temperature. The relevant physical mechanisms including their dependence on temperature and carrier density are considered. The temperature sensitivity of the threshold current is not strongly increasing with higher temperature.     

Au-GaN肖特基结的伏安特性

在 MBE和 MOCVD两种方法制备的 n- Ga N材料上制作了 Au- Ga N肖特基结 ,测定了肖特基结的室温 I- V特性 .分析表明 :Ga N材料的载流子浓度对肖特基结的特性有很大的影响     

Correlation of tunnelling currents and tunable luminescence in selectively diffused nipi LEDs

Measurements of the current/voltage characteristics and electroluminescence spectra of nipi LEDs with selectively diffused contacts have been performed over the temperature range 3-300 K. Good correlation has been observed between the forward characteristics of the diodes and the tuning of the electroluminescence. Analysis of the I/V characteristics indicates that the recombination occurs by electron tunnelling through the parabolic potential barriers.<>     

一种高温工作的激光测距SOICMOS集成电路

基于薄膜全耗尽SOICMOS工艺,进行了建模分析,在300～600 K温度范围内,利用ISETCAD软件对SOICMOS器件单管高温特性进行了模拟分析,同时利用Verilog软件对激光测距电路进行了整体仿真.通过工艺流片,实现了一种电路级具有完整功能和参数要求的高温工作的激光测距SOICMOS集成电路.通过实际测试表明模拟结果与之相吻合,同时通过对整体电路结果功能和参数在常温和高温下的测试,表明该电路功耗低、速度快,可满足激光测距电路的要求.该电路的研制,对进一步开展高温短沟道SOICMOS集成电路的研究具有一定的指导意义.     

一种高温工作的激光测距SOICMOS集成电路

基于薄膜全耗尽SOICMOS工艺,进行了建模分析,在300～600 K温度范围内,利用ISETCAD软件对SOICMOS器件单管高温特性进行了模拟分析,同时利用Verilog软件对激光测距电路进行了整体仿真.通过工艺流片,实现了一种电路级具有完整功能和参数要求的高温工作的激光测距SOICMOS集成电路.通过实际测试表明模拟结果与之相吻合,同时通过对整体电路结果功能和参数在常温和高温下的测试,表明该电路功耗低、速度快,可满足激光测距电路的要求.该电路的研制,对进一步开展高温短沟道SOICMOS集成电路的研究具有一定的指导意义.     

Bias temperature instability from gate charge characteristics investigations in N-Channel Power MOSFET

This paper reports the effects of bias temperature stress (positive and negative bias temperature instabilites, PBTI–NBTI) on threshold voltage, input capacitance and Miller capacitance of N-Channel Power MOSFET. The device is stressed with gate voltage under precision temperature forcing system. The bias temperature cycling also induces instabilities N-Channel Power MOSFET. The gate charge characteristics have been investigated before and after stress. The capacitances (the drain–gate and drain–source capacitances) are shifted due to the degradation of device physical properties under different stress time and stress temperature conditions. Bi-dimensional simulations have been performed for the 2D Power MOSFET structure and accurately analyzed. Gate charge characteristics of the device have been correlated to physical properties to analyze mechanisms responsible of parameter degradations. It is shown that the main degradation issues in the Si Power MOSFET are the charge trapping and the trap creation at the interface of the gate dielectric performed by energetic free carriers, which have sufficient energy to cross the Si–SiO₂ barrier.     

Studies of electrical properties of microchannel plates during and after high-temperature vacuum bakeout

During the present investigation, attempts have been made to gain an insight into the nature of physical phenomena which are responsible for causing reversible and irreversible changes in the electrical characteristics of microchannel plates (MCP's) as a result of high-temperature vacuum bakeout. It has been found that during the vacuum bakeout of an MCP there exists a transition temperature which determines the occurrence of reversible and irreversible changes in the electrical characteristics of an MCP. At temperatures below the transition temperature, the electrical conduction in an MCP is primarily through the surface and the observed changes are associated with outgassing alone and are reversible in nature. At temperatures above the transition temperature, the electrical conduction in an MCP is found to be through the bulk and predominantly ionic in nature. Such ionic movements through the bulk, it is believed, are responsible for causing the observed irreversible changes in the electrical properties of an MCP. An empirical formula for the variation of MCP strip current as a function of its temperature below the transition temperature has been obtained. The room-temperature values of strip current and electron gain of various MCP's before and after the high-temperature vacuum bakeout have been compared.     

集成数字温度传感器和监控器LM75A及其应用

具有I2C接口的集成数字温度传感器和温度监控器LM75A,不但能作为温度测量装置使用,而且还能作为温度控制装置使用,具有价格低、精度高、线性好、稳定性好等优点。文中介绍了该电路的工作特性及工作原理,给出了利用LM75A设计的典型应用电路及部分程序代码。     

Electrical characterization and modelling of high energy pre-amorphized PN silicon junctions

Shallow P⁺N junctions were obtained using germanium pre-amorphization step to reduce the high diffusivity of boron implanted in silicon. The germanium implantation step was performed under different conditions of temperature: ambient temperature and nitrogen temperature. P-type doping was obtained by boron implantation at relatively low energy. To characterize and simulate the electrical behaviour of such samples, steady state current-voltage measurements have been performed at different temperatures varying between 172 and 294 K. The results show a close dependence between the current-voltage characteristics of the samples and their technological parameters of manufacturing. The pre-amorphization step at ambient temperature seems to improve the electrical behaviour of the junction. To simulate the electrical characteristics of the studied samples, a reliable model has been developed based on the classical Spice formulas and taking into account additional phenomena. The simulated curves satisfactorily fit the experimental results for all the samples.     

Temperature dependence of DC characteristics of NpN InP/GaAsSb/InP double heterojunction bipolar transistors: an analytical study

An analytic study of DC characteristics based on the drift-diffusion approach has been performed for the InP/GaAsSb DHBTs. The current transport of InP/GaAsSb/InP DHBTs has been investigated focusing the device temperature dependence. Our simulation results show that, at room temperature, the DC characteristics of the InP/GaAsSb/InP DHBTs similar to the conventional InP-based HBT using InGaAs as the base layer although a type-II energy band alignment is presented in the InP/GaAsSb HBT. However, due to different mechanisms for the electron injection from the emitter induced by the different conduction band alignments, the InP/GaAsSb HBTs may present a different temperature dependent behavior in term of device current gain as compared to the conventional InP/InGaAs HBTs. Higher current gain could be achieved by the InP/GaAsSb HBTs at elevated temperature.