基于0.13μm SOI COMS工艺的VCSEL驱动器设计

介绍了一种低功耗高速垂直腔表面发射激光器(VCSEL)驱动器的设计。该芯片设计使用国产0.13μm SOI CMOS工艺,能提供6~8mA可调调制电流及4~7mA可调偏置电流。驱动电路采用多级级联放大并结合无源电感并联峰化技术,用以拓展带宽。测试结果表明,该电路在1.2V单电源工作电压下,最高工作速率可达5Gbit/s,总功耗仅为48mW。     

电源内置LCD控制驱动器AMI3801设计研究

介绍了一款电源内置的4灰度色标LCD控制驱动器AMI3801的ASIC设计与实现.分析了芯片数字电路设计方案和若干低功耗技术;重点讨论了模拟电路--内置电源电路和振荡器的设计;相关模拟、数字IP核能被重用在其他LCD驱动控制芯片设计中.还描述了芯片采用的混合信号设计流程,对指导一些模数混合芯片的ASIC设计有重要意义.     

电源内置LCD控制驱动器AMD801设计研究

介绍了一敖电源内置的4灰度色标LCD控制驱动器AMI3801的ASIC设计与实现。分析了芯片数字电路设计方案和若干低功耗技术；重点讨论了模拟电路——内置电源电路和振荡器的设计；相关模拟、数字IP核能被重用在其他LCD驱动控制芯片设计中。还描述了芯片采用的混合信号设计流程。对指导一些模数混合芯片的ASIC设计有重要意义。     

一种高速大电流开关驱动器的设计与实现

设计并实现了一种高速大电流的开关驱动器,可用于驱动PIN开关以及IGBT开关等.开展了系统结构、电路和版图技术研究,并采用亚微米CMOS标准工艺进行设计和制造.通过采用一种带隙基准结构提供偏置的方式使电路兼容TTL和CMOS输入,保证良好的温度特性;通过采用传输门功率驱动电路实现三态控制,解决了高速应用时电容馈通效应问题.详细设计了TTL输入转换电路、基准和偏置电路、三态输出和功率驱动等电路;基于0.6 μm CMOS工艺重点设计了高速驱动器中功率开关版图.该高速大电路开关驱动器产品的传输速度达到了25 ns,驱动电流达500 mA.     

一种低功耗时钟芯片的设计与实现

本文讨论了一种低功耗时钟芯片的设计与实现。通过分析CMOS电路功耗产生原因,给出了详细的低功耗实现方案。流片后测试表明该芯片工作电流0.17mA,满足低功耗要求。     

应用于红外大面阵数据传输的接口电路设计

红外大面阵(2560×2048)数字读出电路对芯片数据接口有高速、低功耗、强驱动能力的需求。采用0.18■m互补金属氧化物半导体(Complementary Metal Oxide Semiconductor, CMOS)工艺设计了4∶1并串转换电路、电平转换电路以及采用预加重技术的低压差分信号(Low Voltage Differential Signal, LVDS)驱动器电路。并串转换电路采用双沿采样的树形结构降低时钟频率,电平转换电路采用正反馈结构提升速度,LVDS驱动电路采用可编程电流大小的预加重副通路对主通路进行高频分量补偿,以保证驱动能力和提升高速信号的完整性。接口的数据传输速率可达到1 Gbit/s。当负载电容为2 pF时,一个通道的功耗为15.8 mW@1 Gbit/s;当负载电容为8 pF且打开预加重时,一个通道的功耗为19 mW@1Gbit/s,输出电压摆幅为350 mV,输出共模电平为1.21 V,LVDS驱动电路的所有参数均满足标准协议。     

低功耗方法在SoC芯片设计中的应用

SOC芯片设计在集成电路设计中占据重要位置,低功耗设计是SoC设计过程中的重要环节。本文首先全面分析了CMOS电路的功耗组成和功耗估计的相关理论,随后从各个设计层次详细分析了SOC芯片低功耗设计的理论及其实现方法。     

低功耗64×64 CMOS快照模式焦平面读出电路新结构

介绍了一个工作于快照模式的CMOS焦平面读出电路的低功耗新结构-OESCA(Odd-Even SnapshotCharge Amplifier)结构该结构像素电路非常简单,仅用三个NMOS管;采用两个低功耗设计的电荷放大器做列读出电路,分别用于奇偶行的读出,不但可有效消除列线寄生电容的影响,而且列读出电路的功耗可降低1 5%,因此OESCA新结构特别适于要求低功耗设计的大规模、小像素阵列焦平面读出电路采用OESCA结构和1.2μm双硅双铝标准CMOS工艺设计了一个64×64规模焦平面读出电路实验芯片,其像素尺寸为50μm×50μm,读出电路的电荷处理能力达10.37pC.详细介绍了该读出电路的体系结构、像素电路、探测器模型和工作时序,并给出了精确的SPICE仿真结果和试验芯片的测试结果.     

一种高速低功耗BiCMOS脉冲式触发器的通用结构

BiCMOS电路兼具CMOS电路高集成度,低功耗的优点和双极型电路高速大驱动能力的优势,已成为目前国际学术界研究的热点之一。本文提出了一种基于BiCMOS工艺的新型脉冲式触发器的通用结构和设计方法,并设计了两种结构简单的BiCMOS脉冲式D型触发器。应用TSMC 180nm工艺,采用HSPICE模拟表明:所设计的BiCMOS脉冲式D型触发器不仅具有正确的逻辑功能,而且具有高速低功耗大驱动能力的优点,与已有文献提出的BiCMOS D型触发器相比,功耗和PDP均有大幅度降低。     

一种适用于相变存储器锁相环时钟的新型电荷泵

设计了一款低噪声、低功耗的电荷泵,适用于相变存储器驱动电路中的锁相环时钟。与其它结构的电荷泵相比较,此款电路对时钟馈通与电荷注入等干扰免疫力强。根据相变存储器对驱动电路低噪声的性能要求,本电路具有低的热噪声和1/f噪声。仿真结果表明输出电压在0℃~80℃温度范围内最大仅有11mV的偏差,其与PFD所产生的相位噪声在1MHz频率下为-102dB。电路采用40nm CMOS工艺设计,电源电压2.5V,功耗0.125mW,芯片面积60 m×55 m。     

可自校正失调电压的BiCMOS锁存比较器设计

在对传统CMOS锁存比较器分析的基础上,设计了一种可自校正失调电压的BiCMOS锁存比较器,它既具有双极型电路快速、输入失调电压低和大电流驱动能力,又具备CMOS电路低功耗和高集成度的特性,因而它们特别适用于高速缓冲数字信息系统和其它便携式数字设备.     

多端I/O系统用BiCMOS连线逻辑电路

为了满足数字通信和信息处理系统多端输入/输出(I/O)、高速、低耗的性能要求,笔者设计了几例BiCMOS连线逻辑电路,并提出了采用0.5 mm BiCMOS工艺,制备所设计的连线逻辑电路的技术要点和元器件参数。所做实验表明了设计的连线逻辑电路既具有双极型逻辑门电路快速、大电流驱动能力的特点,又具备CMOS逻辑门低压、低功耗的长处,而且其扇入数可达3~16,扇出数可达1~18,因而它们特别适用于多端I/O高速数字通信和信息处理系统中。     

BiCMOS circuit technology for a 704 MHz ATM switch LSI

This paper describes BiCMOS level-converter circuits and clock circuits that increase VLSI interface speed to 1 GHz, and their application to a 704 MHz ATM switch LSI. An LSI with a high speed interface requires a BiCMOS multiplexer/demultiplexer (MUX/DEMUX) on the chip to reduce internal operation speed. A MUX/DEMUX with minimum power dissipation and a minimum pattern area can be designed using the proposed converter circuits. The converter circuits, using weakly cross-coupled CMOS inverters and a voltage regulator circuit, can convert signal levels between LCML and positive CMOS at a speed of 500 MHz. Data synchronization in the high speed region is ensured by a new BiCMOS clock circuit consisting of a pure ECL path and retiming circuits. The clock circuit reduces the chip latency fluctuation of the clock signal and absorbs the delay difference between the ECL clock and data through the CMOS circuits. A rerouting-Banyan (RRB) ATM switch, employing both the proposed converter circuits and the clock circuits, has been fabricated with 0.5 μm BiCMOS technology. The LSI, composed of CMOS 15 K gate logic, 8 Kb RAM, I Kb FIFO and ECL 1.6 K gate logic, achieved an operation speed of 704-MHz with power dissipation of 7.2 W     

用0.8μm工艺技术设计的65-kb BiCMOS SRAM

设计了一种65-kb BiCMOS静态随机存取存储器(SRAM)的存储单元及其外围电路,提出了采用先进的0.8mm BiCMOS工艺,制作所设计SRAM的一些技术要点。实验结果表明,所设计的BiCMOSSRAM,其电源电压可低于3V,它既保留了CMOS SRAM低功耗、高集成密度的长处,又获得了双极型(Bipolar)电路快速、大电流驱动能力的优点,因此,特别适用于高速缓冲静态存储系统和便携式数字电子设备中。     

Low-power CMOS/BiCMOS drivers and receivers for on-chipinterconnects

Novel low-voltage swing CMOS and BiCMOS driver/receiver circuits for low-power VLSI applications are proposed. Interconnect wire drivers with low output signal swing are employed. Special receivers provide single and double level conversion while minimizing the total driver/receiver transmission delay. These level converters have no DC power dissipation. At 3.3 V power supply voltage, the proposed circuits consume less power without delay penalty. The power saving is observed to be as high as 30%. At lower supplies further power and delay improvements are observed     

An experimental 1-Mbit BiCMOS DRAM

Three developments are proposed for high-performance DRAMs: a bipolar complementary MOS (BiCMOS) DRAM device structure featuring high soft-error immunity due to a p/SUP +/ buried layer; a high-speed circuit configuration of eight NMOS subarrays combined with BiCMOS peripheral drivers and BiCMOS data output circuitry; and BiCMOS voltage and current limiters lowering power dissipation as well as peak current. A 1.3 /spl mu/m 1-Mb DRAM is designed and fabricated to verify the usefulness of these BiCMOS DRAM technologies. Features of this chip include a typical access time of 32 ns, a typical power dissipation of 450 mW at a 60-ns cycle time, and chip size of 5.0/spl times/14.9 mm/SUP 2/.     

New full-voltage-swing BiCMOS buffers

Circuit techniques are presented for increasing the voltage swing of BiCMOS buffers through active charging and discharging using complementary bipolar drivers. These BiCMOS circuits offer near rail-to-rail output voltage swing, higher noise margins, and higher speed of operation at scaled-down power supply voltages. The circuits are simulated and compared to BiCMOS and CMOS buffers. The comparison shows that the conventional BiCMOS and the complementary BiCMOS buffers are efficient for power supply voltages greater than 3V and that if the power supply voltage is scaled down (<3 V) and the load capacitance is large (>1 pF), the complementary BiCMOS buffers would be the most suitable choice. They provide high speed and low delay to load sensitivity and high noise margins. The first implementation is favorable near a 2.5-V power supply for its smaller area     

一种高速低耗全摆幅BiCMOS集成施密特触发器

通过分析国外流行的一种 Bi CMOS集成施密特触发门 ,提出了一种高速、低功耗、全摆幅输出的Bi CMOS施密特触发器。该器件中单、双极型电路优势互补 ,电源电压为 1 .5 V,实现了优于同类产品的全摆幅输出 ,且其开关速度高于同类 CMOS产品的 1 3倍以上 ,因此特别适用于高速数字通信系统中     

A 1.5-V differential cross-coupled bootstrapped BiCMOS logic forlow-voltage applications

Two new bipolar complementary metal-oxide-semiconductor (BiCMOS) differential logic circuits called differential cross-coupled bootstrapped BiCMOS (DC²B-BiCMOS) and differential cross-coupled BiCMOS (DC²-BiCMOS) logic are proposed and analyzed. In the proposed two new logic circuits, the novel cross-coupled BiCMOS buffer circuit structure is used to achieve high-speed operation under low supply voltage. Moreover, a new bootstrapping technique that uses only one bootstrapping capacitor is adopted in the proposed DC²B-BiCMOS logic to achieve fast near-full-swing operation at 1.5 V supply voltage for two differential outputs. HSPICE simulation results have shown that the new DC²B-BiCMOS at 1.5 V and the new DC²-BiCMOS logic at 2 V have better speed performance than that of CMOS and other BiCMOS differential logic gates. It has been verified by the measurement results on an experimental chip of three-input DC²B-BiCMOS XOR/XNOR gate chain fabricated by 0.8 μm BiCMOS technology that the speed of DC²-BiCMOS at 1.5 V is about 1.8 times of that of the CMOS logic at 1.5 V. Due to the excellent circuit performance in high-speed, low-voltage operation, the proposed DC²B-BiCMOS and DC²-BiCMOS logic circuits are feasible for low-voltage, high-speed applications     

用于通信ASIC的高速BiCMOS逻辑电路

提出了几种通信用BiCMOS逻辑门电路的实现方案。这些逻辑门均可在低电源电压(2.0~3.0 V)下,采用BiCMOS工艺和深亚微米技术精心设计及制作,并经过比较对其作出评价。分析和实验结果表明,所设计的电路不但具有确定的逻辑功能,而且具备高速、低耗、低电源电压和全摆幅的特性,因而完全适用于高速数字通信系统中。