放大器的相位噪声与噪声系数关系式理论推导

介绍了二端口器件放大器的噪声对相位噪声的影响,并从理论上对相位噪声和噪声系数之间的关系式进行了推导。     

放大器的相位噪声与噪声系数关系式理论推导

介绍了二端口器件放大器的噪声对相位噪声的影响,并从理论上对相位噪声和噪声系数之间的关系式进行了推导。     

低压电力线信道噪声特性分析

主要研究了低压电力线信道噪声特性,首先,介绍了电力线通信（PLC）,然后,针对不同种类的噪声进行了建模,测量并分析了电力线信道的噪声特性。通过实验和仿真,得出了低压电力线信道噪声波形及其特点。     

无线广播通信设备的相位噪声与测量

本文对相位噪声的概念进行了分析和介绍,并指出了其在通讯系统中的重要性,同时通过应用实例介绍了测量相位噪声方法。     

相位噪声及其测量方法的探讨

本文介绍了相位噪声的概念和它在通讯系统中的重要性,并分析了测量相位噪声的方法和几个例子。     

一种基于FPGA带限数字噪声发生电路的设计

介绍了一种基于FPGA带限噪声发生电路的结构和实现。该数字噪声信号发生电路采用数字方法生成基带噪声序列,并加入数字低通滤波,可在线修改噪声带宽和幅度。使用方便灵活,并且具有很好的可扩展性。     

有线电视双向HFC网的上行噪声和干扰

介绍了双向HFC系统的上行通道的噪声和干扰,对其来源、分布、特点及影响进行了分析,并提供一些克服噪声和干扰的措施.     

电噪声的直接法测量

讨论了电噪声测量中的直接方法,介绍了噪声测量的若干重要概念,给出了直接法校正因子。并建议,在测试标准中系统的噪声系数以1dB为宜。     

一种基于FPGA带限数字噪声发生电路的没计

介绍了一种基于FPGA带限噪声发生电路的结构和寅现.该数字噪声信号发生电路采用数字方法生成基带噪声序列,并加入数字低通滤波,可在线修改噪声带宽和幅度.使用方便灵活,并且具有很好的可扩展性.     

混合信号衬底耦合噪声的传播及抑制方法

介绍了衬底噪声耦合效应在不同工艺衬底中的传播,应用medici模拟了不同衬底中,噪声发生端和噪声接收端噪声在不同间距下噪声传播的情况,并从工艺和电路设计两个方面介绍了一系列抑制衬底噪声的方法。     

An alternative method for transistor low frequency noise estimation by measuring phase noise of test oscillator

In this paper we suggest an alternative method for the analysis of low frequency noise of transistors based on measurements of phase noise of a test oscillator. This method is demonstrated by experimental results obtained with a simple test oscillator with HEMT, and central frequency of 13.769 GHz. The main contribution to phase noise of the test oscillator comes from up conversion of transistor LF noise. This idea and the method can be used for the selection of transistors for high frequency application or for design of test circuit in RF IC manufacture.     

集成电路工厂的噪声及控制

本文分析了集成电路制厂的噪声来源，阐述了噪声控制的重要性及主要噪声的控制措施     

Robust, versatile, direct low-frequency noise characterization method for material/process quality control using cross-shaped 4-terminal devices

Low frequency (LF) noise measurement is a very sensitive tool for device quality and reliability monitoring. Despite of its potential interest, there are up to now relatively few LF noise studies combined and compared to standard reliability/quality analysis. One of the reasons is the difficulty to implement LF noise measurement on automatic wafer level testing. In this paper we promote a method using cross shaped 4 terminal devices (Hall crosses). The implementation of this method and its advantages over conventional noise measurement methods are described. This method, compatible with on-wafer probe testing, is of particular interest for material/processes quality control purposes especially for less mature material such as AlGaN/GaN Heterostructures.     

变风量空调系统末端噪声控制

变风量空调系统以其巨大的节能优势越来越得到广泛应用,但是室内噪声超标的问题令安装、调试人员感到棘手。根据实际参加某高档楼盘变风量空调系统建设过程中出现的问题,通过分析变风量空调系统末端噪声的来源,研究利用末端单元各部分噪声的衰减影响来控制末端噪声,提出了变风量空调系统未端噪声的具体控制措施。     

Low-frequency noise in hot-carrier degraded nMOSFETs

This paper discusses the low-frequency (LF) noise in submicron nMOSFETs under controlled transistor aging by hot-carrier stress. Both traditional, steady-state LF noise as well as the LF noise under periodic large-signal excitation were found to increase upon device degradation, for both hydrogen passivated and deuterium passivated Si–SiO₂ interfaces. As hot-carrier degradation is slower in deuterium-annealed MOSFETs, so is the increase of the noise in these devices. The noise-suppressing effect of periodic OFF switching is gradually lost during hot-carrier degradation, as the LF noise under periodic large-signal excitation increases more rapidly than the LF noise in steady-state.     

Effect of Schottky barrier alteration on the low-frequency noise ofInP-based HEMTs

For the first time the effect of increasing the Schottky barrier's Al content of InP-based InAlAs-InGaAs HEMTs from 48 to 60% on the low-frequency (LF) drain and gate current noise is investigated. It is shown that the LF gate current noise S_IG(f) for the 60% case decreases by almost three decades, while the LF drain current noise S _IDS(f) stays at the same level. From small coherence values, it can be concluded that drain and gate noise sources can be treated separately which facilitates the LF noise modeling of these HEMTs     

Impact of hot-carrier degradation on the low-frequency noise in MOSFETs under steady-state and periodic large-signal excitation

This letter reports the diagnostic power of the low-frequency noise analysis (steady-state and periodic large-signal excitation) in MOSFETs subjected to hot-carrier degradation. The LF noise under periodic large-signal excitation is shown to increase more rapidly than the LF noise in steady-state. Moreover the improvement in the LF noise performance due to periodic large-signal excitation, observed for fresh devices, gradually diminishes as the devices are subjected to hot-carrier stress.     

Impact of advanced processing modules on the low-frequency noise performance of deep-submicron CMOS technologies

Fundamental studies related to the low-frequency (LF) noise performance in semiconductors started more than 40 years ago. In 1957, McWhorter published the first model for the 1/f noise in semiconductors, which is still in use. Whereas for many decades LF noise studies were mainly of fundamental and theoretical interests, in recent years, LF noise characterisation has become a very valuable diagnostic technique for the development of semiconductor materials and devices. Especially, the use of noise characterisation as a tool for reliability predictions has triggered the semiconductor engineering society. Not only the silicon starting material, but also many of the used process modules have a strong impact on the noise performance. This trend is becoming even more pronounced for the advanced deep-submicron technologies. For analog applications of scaled technologies, LF noise may even act as a showstopper. This review, therefore, focuses on the impact of advanced processing on the low-frequency noise behaviour. Both front- and back-end process modules are discussed.     

Double stage low-frequency noise equivalent circuit of green InGaN LEDs for description of noise characteristics

To explain the current dependences of the mean-square value of low-frequency (LF) noise current in green InGaN light emitting diodes (LEDs), a double stage low-frequency noise equivalent circuit of the LED is proposed. It is shown that the nonmonotonic dependence of the LF noise on the injection current in the LED can be explained by the effect of two LF noise generators: a noise current generator, which is localized near the heterojunction and is determined by tunnel-recombination processes at the interface, and a generator determined by recombination processes in the active region of the structure.     

Electrical noise and RTS fluctuations in advanced CMOS devices

A brief overview of recent issues concerning the low frequency (LF) noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are presented and illustrated through experimental results obtained on advanced CMOS generations. The use of the LF noise measurements as a characterization tool of large area MOS devices is also discussed. The main physical features of random telegraph signals (RTSs) observed in small area MOS transistors are reviewed. The impact of scaling on the LF noise and RTS fluctuations in CMOS silicon devices is also addressed. Experimental results obtained on 0.18 μm CMOS technologies are used to predicting the trends for the noise figure of foregoing CMOS technologies e.g. 0.1 μm and beyond. The formulation of the thermal noise underlying the LF fluctuations in MOSFETs is recalled for completeness.