基于Web方式下的电信传统设备的网络管理

采用标准化的网络管理接口方案解决当前网络中网络设备的多厂商接口问题,可以为企业繁杂的网络管理带来很大的方便和利益.现在比较普及的管理标准有CIMP(公共管理信息协议)和SNMP(简单网络管理协议),但是,有些传统设备不提供标准的接口,怎样把原来电信网中遗留的传统设备很好地集成到这些标准化网络管理模型中,文中提出了一种解决方案,并且详细分析了基于Web方式下的网络管理的优势.     

EPON系统中多个OLT的管理监测及实现

提出一种通过嵌入式系统管理EPON网络中多个OLT的方案,主要针对EPON的网络管理协议以及所有的网管信息参数的设置和修改.对于整个管理体系,分别从硬件接口设计、嵌入式操作系统的移植以及驱动程序的设计来描述嵌入式系统如何实现对多个OLT的实时监测和管理.     

嵌入式设备SNMP代理软件的分析与实现

分析了嵌入式简单网络管理协议（Simple Network Management Protocol,SNMP）代理软件的功能模块及相应模块软件结构的组成,根据嵌入式设备的软硬件资源,并基于NET-SNMP开发包,讨论管理信息库（Management Information Base,MIB）模块的构建和代理软件的开发流程。综合多种网络管理开发工具,验证了SNMP代理对嵌入式设备的网络管理功能。     

RapidIO 网络集群管理技术

分析RapidIO总线通信特点与嵌入式系统通信需求,研究了RapidIO网络集群管理技术,融合机架内异构平台RapidIO网络管理技术与机架间网络管理技术,结合数据库集群、网络管理节点无状态等设计方案,为资源池系统提供了机架内、任意机架间高速通信的能力与网络管理节点多重备份的能力。为嵌入式系统的通信扩展提供了强力支撑。     

基于SNMP的带外服务器的研究

分析了基于SNMP协议的网络管理结构及在嵌入式带外服务器中实现SNMP模块的重要性,详细说明了SNMP Agent的工作流程.在原有的基于嵌入式Linux平台的带外管理系统中增加了SNMP模块,增强了该系统的网络可管理性,可以通过网络管理工作站对其进行监控和维护.     

基于SNMP的网管代理模拟软件的方案设计

简单网络管理协议(SNMP)是目前应用最广泛的网络管理协议,用以管理接入网络的设备。网络管理代理是SNMP的组成部分,它是运行在被管设备端的管理程序,具备本地设备的相关状态信息,可与网络管理系统通信。本课题源于综合网络管理系统的开发,在实际的应用场景中,在测试时期就投入非常多的资金购置设备用于组建开发环境势必造成浪费。因而采用模拟软件环境是最佳的解决方法。本课题的目的就是设计一个网络管理代理模拟软件,它可以模拟各类网络设备,接受管理中心的管理操作。     

T-MPLS网络的分层嵌套管理机制

T-MPLS网络与众不同的传送面要求必须有相应的独特的网络管理方案,文章重点介绍了T-MPLS网络的综合网络管理方案:数据包和0AM包的独立传输,管理面与数据面分割且支持多层嵌套的管理体系;基于CMIP协议,但功能有所扩展的管理平面.     

一种嵌入式网络管理平台设计

针对当前网络化发展的形式,提出一种新的嵌入式网络管理平台设计方案。硬件上,采用基于独立网关模式体系结构,利用高性能的嵌入式处理器,实现了平台的关键组成部分——嵌入式网关;软件上,以Zenoss网络管理软件为基础,采用基于Web管理模型,并对网络上其他嵌入式设备进行了网络化。该平台基于先进的嵌入式技术,具有小型化、智能化和可扩展性强的优点。     

嵌入式同步时钟系统的设计与实现

本文介绍了一种基于嵌入式微控制器MSP430构建的嵌入式同步时钟系统的设计与实现方案，在实现了网络时钟同步的基础上又提供了方便易用的网络管理接口。     

自动交换光网络域间网络管理系统模型设计

从网络管理的角度出发,提出自动交换光网络基于网络层次的网络管理实现方案。针对目前光网络多区域、异构的特点,在ITU-T已有的网络信息模型的基础上,做出扩展,提出适合域间网络管理的信息模型,实现跨区域的网络管理;同时提出适合ASON特色的三种连接的管理信息模型,实现跨区域网络端到端的连接管理;最后,给出了基于CORBA技术的域间网络管理系统实现方案。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.