有限光束穿过薄介质板的类Goos-Hnchen位移

研究了有限光束穿过薄介质板时透射光束存在类Goos-Hanchen位移、角偏转、束腰宽度的修正以及焦点的纵向移动4种非几何光学效应;给出了位移反向时入射角及介质板的厚度所需满足的必要条件;报道了利用微波技术首次在实验上观测到穿过薄介质板时波束的反向GHL位移.这些奇异的光学现象将在光学器件和集成光学中具有潜在的应用.     

有限光束穿过薄介质板的类Goos-H(a)nchen位移

研究了有限光束穿过薄介质板时透射光束存在类Goos-H(a)nchen位移、角偏转、束腰宽度的修正以及焦点的纵向移动4种非几何光学效应;给出了位移反向时入射角及介质板的厚度所需满足的必要条件;报道了利用微波技术首次在实验上观测到穿过薄介质板时波束的反向GHL位移.这些奇异的光学现象将在光学器件和集成光学中具有潜在的应用.     

光束在单层金属界面上反射时的纵向位移

光束在弱吸收介质板上反射时,会产生纵向位移。采用稳态相位法从理论上研究了线偏振光在单层金属界面上反射时的纵向位移。结果表明。在吸收频率区,TE偏振反射光束的纵向位移很小,随入射角增大单调增加,掠射时趋于饱和,而TM偏振反射光束的纵向位移为负位移,在入射角为80°附近达到峰值约λ;在反射频率区,TE反射光束的纵向位移随入射角的变化规律与在吸收频率区相同,饱和值更小,TM反射光束的纵向位移为负位移,掠射时约几个波长。     

圆形周期介质内艾里光束的传输特性

为了研究无衍射光波在特异材质内的传输特性，实现更优良的光波通信，将传统右手材料和双负折射率材料相结合，提出了一种轴向阶跃变化周期圆形介质结构。基于广义惠更斯-菲涅耳光学积分公式，结合光学传输矩阵，分析了艾里光束在这种传输媒质中出射表面光强分布特性和侧面传输光强分布图；分析了负折射率参量对这类光波演变的影响及其补偿机理；分析了实现输出光波完美还原时，负折射率大小同介质单元长度的定量关系。结果表明，当介质孔径逐渐减小时，有限艾里光束衍射效应越来越严重，并且出射光强外形轮廓逐渐从艾里光束过渡到高斯光束；当双负折射率材料的折射率n_l的绝对值大于右手材料的折射率n_r时，出射表面实现光波完美还原的双负折射率材料单元层越长，反之则越短。该研究对分析周期或准周期轴向阶跃变化的圆形平板介质光波通信是有帮助的。     

高斯光束与非线性介质限幅的数值分析

在强光与非线性介质相互作用的自作用效应中,自聚焦现象是人们研究的最为广泛的一种,并且还提出基于这种效应的光学双稳、限幅等器件原理。 在薄介质近似下,即介质厚度L比特征长度R_d=1/2k_0ω_0~2小的多时,有人研究了光束通过这样的非线性介质后被动限幅情况。在介质引起的相位改变|ΔΦ|?相似文献   

光束反射中的若干新奇现象

本文对有限宽度的光束在两种不同光学性质的平面界面上反射中的若干新奇现象进行了系统的介绍．这里所说的反射中的新奇现象，指的是与经典几何光学反射定律不相一致的一切现象，主要介绍当光束从光密介质入射到光疏介质的界面上时的反射现象．本文就三种典型光束(平行光束、高斯光束与发散光束)的反射现象分述如下：     

有偏压光伏光折变晶体中自加速光束交互效应的理论研究

采用分步傅里叶法理论探究了有限能量艾里光束和非线性加速光束在有偏压光伏光折变介质中的交互效应。结果表明:调节光束初始间隔和入射角度可使同相位或反相位有限能量艾里光束相互吸引或排斥。同相位时不仅产生呼吸孤子和孤子对，在适当参数条件下还可形成分叉孤子；反相位时仅有孤子对产生；同相位非线性切趾加速光束交互可以产生奇数个呼吸孤子，反相位非线性切趾加速光束交互可以产生偶数个呼吸孤子对。此外，呼吸孤子的峰值强度、呼吸周期和相互作用力的大小均可以通过外部偏压和入射角度进行有效调控。研究结果可为艾里光束交互调控提供理论基础，同时在全光信息处理和光学网络器件制备等领域具有潜在的应用前景。     

分划板失调对猫眼光学系统反射特性的影响

为了研究猫眼光学系统中分划板失调对入射光束的反射特性影响,考虑光学元件的等效光阑作用,将失调光阑孔径函数展开为有限项复高斯函数之和,利用失调光学系统的广义衍射公式,推导出入射光束经含分划板失调猫眼光学系统的反射光束场分布的近似解析式,得到反射光束场分布与入射光束光学参量、分划板孔径尺寸和分划板失调量之间的关系,对特定猫眼光学系统定量分析了分划板失调对反射光束场分布的影响。结果表明,分划板失调对反射光束场分布产生影响,特别是对远场光场分布影响显著。     

终端靶场中相位畸变对近场光束质量的影响

终端靶场聚焦系统中的光学元件上存在不可避免的缺陷致使光场波前发生畸变,根据高功率激光装置终端靶场系统中强光束传输的特点,建立了描述光学元件引入的局域相位调制的模型,研究了终端靶场中具有高斯型相位波前畸变的平顶光束经过透镜会聚,并在后续防溅射板等熔石英介质中经历非线性增长的传输演变过程,详细分析了高斯型相位波前畸变、熔石英厚度和透镜焦距对终端靶场聚焦系统中的近场光束质量的影响。结果表明,高斯型波前畸变越严重、熔石英厚度越长、透镜焦距越短,近场光束质量越差,中高频增长越多。     

偏心椭圆高斯光束

在椭圆高斯光束横坐标中引入复数偏移量,将其推广为偏心椭圆高斯光束。在垂直于ｚ轴截面内强度分布仍然是椭圆高斯函数分布,在传播方向上光束峰值强度沿直线分布,波前也存在横向位移。对偏心椭圆高斯光束经一阶光学系统的变换关系进行了定量推导。对传播方向偏离ｚ轴的椭圆高斯光束经薄透镜传播时的特例进行了讨论。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.