Extremely Enhanced Nonlinear Current–Voltage Properties of Tb‐Doped CaCu3Ti4O12 Ceramics

Nonlinear current–voltage properties of CaCu₃Ti₄O₁₂ ceramics were extremely enhanced by doping with Tb. Substitution of Tb to CaCu₃Ti₄O₁₂ resulted in a decrease in grain size due to the ability of Tb ions to inhibit grain boundary mobility. The dielectric properties of CaCu₃Ti₄O₁₂ ceramics were degraded after doping with Tb. Surprisingly, the nonlinear electrical properties were strongly enhanced. The best properties with a nonlinear coefficient of ~29.67 and breakdown electric field strength of ~1.52 × 10⁴ V/cm were obtained in the Ca_0.775Tb_0.15Cu₃Ti₄O₁₂ ceramic. These extremely enhanced properties were attributed to modification of grain boundary electrical response due to the effect Tb substitution.     

Low‐Temperature Sintering Microwave Characteristics of B2O3‐doped CaLa4Ti4O15 Dielectric Ceramics

Preparation and microwave dielectric properties of B₂O₃‐doped CaLa₄Ti₄O₁₅ ceramics have been investigated. X‐ray diffraction data show that CaLa₄Ti₄O₁₅ ceramic has a trigonal structure coupled with a second phase of CaLa₄Ti₅O₁₇. The CaLa₄Ti₄O₁₅ ceramic with addition of 0.5 wt% B₂O₃, sintered at 1220°C for 4 h, exhibits microwave dielectric properties with a dielectric constant of 45.8, Q × f value of 24,000 GHz, and temperature coefficient of resonant frequency (τ_f) of ?19 ppm/^°C. B₂O₃‐doped CaLa₄Ti₄O₁₅ ceramics, which have better sintering behavior (decrease in sintering temperature ~ 330°C) and dielectric properties than pure CaLa₄Ti₄O₁₅ ceramics, are candidates for applications in microwave devices.     

Ge4+ doped CaCu2.95Zn0.05Ti4O12 ceramics: Two-step reduction of loss tangent

CaCu₃Ti₄O₁₂ ceramics have been extensively studied for their potential applications as capacitors in recent years; however, these materials exhibit very large dielectric losses. A novel approach to reducing the dielectric loss tangent in two steps, while increasing the dielectric permittivity, is presented herein. Doping CaCu₃Ti₄O₁₂ with a Zn dopant reduces the loss tangent of the ceramic material from 0.227 to 0.074, which is due to the increase in grain boundary (GB) resistance by an order of magnitude (from 6.3× 10³ to 3.93 × 10⁴ Ω cm). Zn-doping slightly changes the microstructure and dielectric permittivity of the CaCu₃Ti₄O₁₂ ceramic, which reveals that the primary role of the Zn dopant is to tune the intrinsic properties of the GBs. Surprisingly, the addition of the Ge⁴⁺ dopant into the Zn²⁺-doped CaCu₃Ti₄O₁₂ ceramic sample led to a further decrease in the loss tangent from 0.074 to 0.014, due to enhanced GB resistance (3.1 × 10⁵ Ω cm). The grain size increased remarkably from 2–3 μm to 85–90 μm, corresponding to a significant increase in the dielectric permittivity (~1–4 × 10⁴). The large increase in GB resistance is due to the intrinsic potential barrier height at the GBs and the segregation of the Cu-rich phase in the GB region. First-principles calculations revealed that Zn and Ge are preferentially located at the Cu sites in the CaCu₃Ti₄O₁₂ structure. The substitution of the Ge dopant does not hinder the role of the Zn dopant in terms of improving the electrical properties at the GBs. These phenomena are effectively explained by the internal barrier layer capacitor model. This study provides a way of improving the dielectric properties of ceramics for their practical use as capacitors.     

Low temperature preparation of CaCu3Ti4O12 ceramics with high permittivity and low dielectric loss

Low temperature preparation of CaCu₃Ti₄O₁₂ ceramics with large permittivity is of practical interest for cofired multilayer ceramic capacitors. Although CaCu₃Ti₄O₁₂ ceramics have been prepared at low temperatures as previously reported, they have rather low permittivity. This work demonstrates that CaCu₃Ti₄O₁₂ ceramics can not only be prepared at low temperatures, but they also have large permittivity. Herein, CaCu₃Ti₄O₁₂ ceramics were prepared by the solid state reaction method using B₂O₃ as the doping substance. It has been shown that B₂O₃ dopant can considerably lower the calcination and sintering temperatures to 870 °C and 920 °C, respectively. The relative permittivity of the low temperature prepared CaCu₃Ti_4−xB_xO₁₂ ceramics is about 5 times larger than the previously reported results in the literature. Furthermore, the dielectric loss of the CaCu₃Ti_4−xB_xO₁₂ ceramics is found to be as low as 0.03. This work provides a beneficial base for the future commercial applications of CaCu₃Ti₄O₁₂ ceramics with large permittivity for the cofired multilayer ceramic capacitors.     

Microstructural evolution,non‐Ohmic properties,and giant dielectric response in CaCu3Ti4−xGexO12 ceramics

The microstructural evolution, non‐Ohmic properties, and giant dielectric properties of CaCu₃Ti_4?xGe_xO₁₂ ceramics (x=0‐0.10) are systematically investigated. The Rietveld refinement confirms the existence of a pure CaCu₃Ti₄O₁₂ phase in all samples. Significantly enlarged grain sizes of CaCu₃Ti_4?xGe_xO₁₂ ceramics are associated with the liquid phase sintering mechanism. Enhanced dielectric permittivity from 6.90×10⁴ to 1.08×10⁵ can be achieved by increasing Ge⁴⁺ dopant from x=0‐0.10, whereas the loss tangent is remarkably reduced by a factor of ≈10. Non‐Ohmic properties are enhanced by Ge⁴⁺ doping ions. Using impedance and admittance spectroscopies, the underlying mechanisms for the dielectric and nonlinear properties are well described. The improved nonlinear properties and reduced loss tangent are attributed to the enhanced resistance and conduction activation energy of the grain boundaries. The largely enhanced permittivity is closely associated with the enlarged grain sizes and the increase in the Cu⁺/Cu²⁺ and Ti³⁺/Ti⁴⁺ ratios, which are calculated from the X‐ray absorption near‐edge structure.     

Enhancement of giant dielectric response in Ga-doped CaCu3Ti4O12 ceramics

The influences of Ga³⁺ doping ions on the microstructure, dielectric and electrical properties of CaCu₃Ti₄O₁₂ ceramics were investigated systematically. Addition of Ga³⁺ ions can cause a great increase in the mean grain size of CaCu₃Ti₄O₁₂ ceramics. This is ascribed to the ability of Ga³⁺ doping to enhance grain boundary mobility. Doping CaCu₃Ti₄O₁₂ with 0.25 mol% of Ga³⁺ caused a large increase in its dielectric constant from 5439 to 31,331. The loss tangent decreased from 0.153 to 0.044. The giant dielectric response and dielectric relaxation behavior can be well described by the internal barrier layer capacitor model based on Maxwell?Wagner polarization at grain boundaries. The nonlinear coefficient, breakdown field, and electrostatic potential barrier at grain boundaries decreased with increasing Ga³⁺ content. Our results demonstrated the importance of ceramic microstructure and electrical responses of grain and grain boundaries in controlling the giant dielectric response and dielectric relaxation behavior of CaCu₃Ti₄O₁₂ ceramics.     

Dielectric properties with high dielectric permittivity and low loss tangent and nonlinear electrical response of sol-gel synthesized Na1/2Sm1/2Cu3Ti4O12 perovskite ceramic

Giant dielectric ceramic, Na_1/2Sm_1/2Cu₃Ti₄O₁₂, was successfully prepared by a modified sol-gel method. X-ray diffraction experiments indicated that a body-centered cubic structure with a space group of Im3 was obtained. Our density functional theory calculations revealed that codoping Na and Sm in the CaCu₃Ti₄O₁₂ structure resulted in charge compensation between Na and Sm ions in this structure, whereas the oxidation states of Cu and Ti were unaltered. Giant dielectric permittivity ～7.21 × 10³ - 8.04 × 10³ and low dielectric loss tangent ～0.045–0.049 were accomplished at a sintering temperature of 1050 °C for 12–18 h. Nonlinear J - E property with breakdown electric field ～5.13 – 5.78 × 10³ V/cm and nonlinear coefficient ～6.08–6.82 were also achieved. The n-type semiconducting grain originated from short-range migrations of mixed Cu⁺/Cu²⁺ and Ti³⁺/Ti⁴⁺ charges. Finally, our charge analysis showed that the occurrence of Cu⁺ and Ti³⁺ was related to the existence of oxygen vacancy in these ceramics.     

Stability and electrical properties of MoSi2‐ and WSi2‐oxide electroconductive composites

MoSi₂‐ and WSi₂‐based electroconductive ceramic composites were fabricated using 40‐80 vol% fine‐ and coarse‐Al₂O₃, and ZrO₂ particles (refractory oxides) after sintering in argon. Their chemical and thermal stability was tested between 1400°C‐1600°C for up to 48 hours. X‐ray diffraction analysis showed the formation of secondary 5‐3 metal silicide (Mo₅Si₃, W₅Si₃) and silica phases on the grain boundaries and surface. The fraction of the W₅Si₃ (11.4‐38.8 vol%) was significantly higher than that of the Mo₅Si₃ (3.3‐7.3 vol%) in the composites after annealing at 1400°C for 48 hours. The rates of grain growth in the composites (0.013‐0.023 μm/h) were highly decreased by a grain‐boundary pinning effect. This effect was relatively better with the addition of the coarse‐grained oxides due to their more homogeneous distribution throughout the microstructure. The 20–80 vol% MoSi₂‐Al₂O₃ (fine‐grained) composite exhibited an electrical conductivity of 8.8 S/cm at 900°C. At the 60 vol% silicide content, MoSi₂–Al₂O₃ (coarse‐grained) and WSi₂–Al₂O₃ (fine‐grained) showed higher electrical conductivity (126‐128 S/cm) at 900°C. The density, porosity level, particle distribution, intrinsic conductivity of silicide phase, particle size, and fraction of the secondary 5‐3 silicide phase highly influenced their electrical properties.     

Submicron crystalline buildup and size‐dependent energy harvesting characteristic in PZN–PZT ternary ferroelectrics

Piezoelectric energy harvester converts low‐frequency vibrational energy in the environment into electrical energy, enabling the purpose of self‐supplying power for low‐energy consumption devices. The key to miniaturizing energy harvester is the buildup of the submicron‐grained ceramic with a high transduction coefficient (d×g), which is still a big challenge from a technical point of view. In this work, the popular ternary system of Pb(Zn_1/3Nb_2/3)O₃–Pb(Zr_0.5Ti_0.5)O₃ (PZN–PZT) has been selected as objective compound, and the submicron‐grained ceramics were prepared by a combination of high‐energy ball milling and pressureless sintering technology. The results revealed that nanocrystalline PZN–PZT powders can be synthesized by one step mechanochemical route without the calcination stage. Using these nanopowders as precursors, dense ceramics with different grain size have been prepared through tailoring the sintering temperature. The study of size‐dependent energy harvesting characteristic evidenced an optimum transduction coefficient of 7980×10^?15 m²/N was obtained for 950°C sintered specimen, which has uniform microstructure with mean grain size of 0.33 μm. In the mode of the cantilever‐type energy harvester constructed by this material, the output power at low frequency of 89 Hz was as high as 69 μW at an acceleration of 10 m/s², showing the suitability for piezoelectric generators harvesting environmental vibrational energy.     

Thermal stability improvement of dielectric properties and non-ohmic characteristic of CaCu3+xTi4O12 ceramics via a Cu-nonstoichiometric approach

In this work, the effects of Cu composition on the thermal stability of the dielectric and nonlinear properties of CaCu_3+xTi₄O₁₂ (?0.2 ≤ x ≤ 0.2) ceramics obtained via a polymer-pyrolysis chemical process were studied. The mean grain sizes of Cu-stoichiometric (x = 0), Cu-deficient (x < 0) and Cu-excess (x > 0) CaCu_3+xTi₄O₁₂ ceramics were found to be ~3.2, ~3.4 and ~3.7 μm, respectively. Interestingly, very good dielectric properties (0.020 ≤ tanδ ≤ 0.038 and 4000 ≤ ε′ ≤ 7065) were attained in CaCu_3+xTi₄O₁₂ (?0.2 ≤ x ≤ 0.1, excluding x = 0.2) ceramics. Moreover, the variation of dielectric constant (ε′) within a limit of ±15% (Δε′_{± 15%}) over a wide temperature range (T_R) of ?70 – 220 °C with low tanδ < 0.05 (tanδ_<0.05) over a T_R of ?70 to 80 °C were achieved in a CaCu_2.8Ti₄O₁₂ ceramic. These results suggest that this ceramic could be applicable for X9R capacitors and energy storage devices that require high thermal stability. Additionally, the nonlinear properties of Cu-nonstoichiometric ceramics could be improved when compared with those of the Cu-stoichiometric material. The incremental changes of dielectric and nonlinear properties of CaCu_3+xTi₄O₁₂ (?0.2 ≤ x ≤ 0.2) ceramics revealed the significant role of Cu composition on grain boundary resistance (R_gb), which was confirmed by impedance spectroscopy analysis. In addition, XANES results revealed the proper ratios of Cu⁺:Cu²⁺ and Ti³⁺:Ti⁴⁺ found in these ceramics, indicating the semiconducting behavior of these grains.     

Effects of LiF addition on microstructure and dielectric properties of CaCu3Ti4O12 ceramics

The effects of small amounts of lithium fluoride sintering aid on the microstructure and dielectric properties of CaCu₃Ti₄O₁₂ (CCTO) ceramics were investigated. CCTO polycrystalline ceramics with 0.5 and 1.0 mol% LiF, and without additive were prepared by solid state synthesis. Good densification (>90% of the theoretical density) was obtained for all prepared materials. Specimens without the sintering aid and sintered at 1090 °C exhibit secondary phases as an outcome of the decomposition reaction. The mean grain size is controlled by the amount of LiF in specimens containing the additive. Impedance spectroscopy measurements on CaCu₃Ti₄O₁₂ ceramics evidence the electrically heterogeneous nature of this material consisting of semiconductor grains along with insulating grain boundaries. The activation energy for grain boundary conduction is lower for specimens prepared with the additive, and the electric permittivity reached 53,000 for 0.5 mol% LiF containing CCTO.     

A Novel One‐Step Flame Synthesis Method for Tungsten‐Doped CCTO

An efficient synthesis is used for the first time to prepare CaCu₃Ti_4?xW_xO₁₂ (x = 0.01, 0.03, and 0.05) electroceramics for energy storage capacitors. CaCu₃Ti_4?xW_xO₁₂ ceramics are synthesized via flame synthesis of metal nitrates precursors in nonaqueous solution using cheap, stable, and insoluble solid TiO₂ powder. The pathway yielded a CaCu₃Ti₄O₁₂ (CCTO) phase with the traces of CuO and CaTiO₃ sintered at 1050°C for 30 h. The SEM micrograph shows the grains with smooth surfaces associated with cubical appearance and the size range of 1.5–7, 2.0–7.5, and 2.0–8.0 μm for CCTWO01, CCTWO03, and CCTWO05, respectively. The EDX and XPS analyses show the presence of Ca, Cu, Ti, W, and O elements confirming the purity of these ceramics. The complex impedance and modulus (M) spectroscopy show that the dielectric constant (ε_r) values of the W‐doped CCTO were dominantly affected by the electrical properties of the grain boundary, which is also evident from the SEM micrographs. The grain‐boundary resistance decreased with increasing tungsten content. The activation energies for the grain boundaries were calculated from the impedance and modulus data using the slope of the ln τ versus 1/T and were found to be in the range 0.62–0.67 eV.     

Structural and dielectric properties,and nonlinear electrical response of the CaCu3-xZnxTi4O12 ceramics: Experimental and computational studies

CaCu_3-xZn_xTi₄O₁₂ ceramics (x = 0, 0.05, 0.10) were successfully prepared by a conventional solid-state reaction method. Their structural and dielectric properties, and nonlinear electrical response were systematically inspected. The X-ray diffraction results indicated that single-phase CaCu₃Ti₄O₁₂ (JCPDS no. 75–2188) was obtained in all sintered ceramics. Changes in the lattice parameter are well-matched with the computational result, indicating an occupation of Zn²⁺ doping ions at Cu²⁺ sites. The overall tendency shows that the average grain size decreases when x increases. Due to a decrease in overall grain size, the dielectric permittivity of CaCu_3-xZn_xTi₄O₁₂ decreases expressively. Despite a decrease in the dielectric permittivity, it remains at a high level in the doped ceramics (~3,406–11,441). Besides retention in high dielectric permittivity, the dielectric loss tangent of x = 0.05 and 0.10 (~0.074–0.076) is lower than that of x = 0 (~0.227). A reduction in the dielectric loss tangent in the CaCu_3-xZn_xTi₄O₁₂ ceramics is closely associated with the enhanced grain boundary response. Increases in grain boundary resistance, breakdown electric field, and conduction activation energy of grain boundary as a result of Zn²⁺ substitution are shown to play a crucial role in improved grain boundary response. Furthermore, the XPS analysis shows the existence of Cu⁺/Cu²⁺ and Ti³⁺/Ti⁴⁺, indicating charge compensation due to the loss of oxygen lattice. Based on all results of this work, enhanced dielectric properties of the Zn-doped CCTO can be explained using the internal barrier layer capacitor model.     

Non‐Ohmic Properties and Electrical Responses of Grains and Grain Boundaries of Na1/2Y1/2Cu3Ti4O12 Ceramics

The dielectric and non‐Ohmic properties of Na_1/2Y_1/2Cu₃Ti₄O₁₂ ceramics sintered under various conditions to obtain different microstructures were investigated. Microstructure analysis confirmed the presence of Na, Y, Cu, Ti, and O and these elements were well dispersed in the microstructure. Na_1/2Y_1/2Cu₃Ti₄O₁₂ ceramics exhibited non‐Ohmic characteristics with large nonlinear coefficients of about 5.7–6.6 irrespectively of sintering conditions. The breakdown electric field of fine‐grained ceramic with the mean grain size of ≈1.7 μm (≈5600 V/cm) was much larger than those of the course‐grained ceramics with grain sizes of ≈9.5–10.4 μm (≈1850–2180 V/cm). Through optimization of sintering conditions, a low loss tangent of about 0.03 and very high dielectric permittivities of 18 000–23 000 with good temperature stability were successfully accomplished. The electrical responses of the grains and grain boundaries can, respectively, be well described using admittance and impedance spectroscopy analyses based on the brickwork layer model. A possible mechanism for the origin of semiconducting grains is discussed. The colossal dielectric response was reasonably described as closely correlated with the electrically heterogeneous microstructure by means of strong interfacial polarization at the insulating grain‐boundary layers. The non‐Ohmic properties of Na_1/2Y_1/2Cu₃Ti₄O₁₂ ceramics were primarily related to their microstructure, i.e., grain size and volume fraction of grain boundaries.     

Microstructural evolution and dielectric properties of SiO2-doped CaCu3Ti4O12 ceramics

The abnormal grain growth (AGG) behavior of undoped and SiO₂-doped CaCu₃Ti₄O₁₂ (CCTO) ceramics were investigated. With the addition of 2 wt.% SiO₂, the AGG-triggering temperature decreased from 1100 to 1060 °C, and the temperature for obtaining a uniform and coarse microstructure decreased from 1140 to 1100 °C. The lowering of the AGG temperature by SiO₂ addition was attributed to the formation of a CuO-SiO₂-rich intergranular phase at lower temperature. The apparent dielectric permittivity of coarse SiO₂-doped CCTO ceramics was ∼10 times higher than that of fine SiO₂-doped CCTO ceramics at the frequency of 10³–10⁵ Hz. The doping of SiO₂ to CCTO ceramics provides an efficient route of improving the dielectric properties via grain coarsening. The correlation between the microstructure and apparent permittivity suggests the presence of a barrier layer near the grain boundary.     

Preparation of Bi4Ti3O12 nanopower by azeotropic co-precipitation and dielectric properties of the sintered ceramic

Bi₄Ti₃O₁₂ nanopowders were prepared by an azeotropic co-precipitation method and the phase evolution process, microstructure and sintering behavior were investigated. The results indicate that well dispersed and agglomerate-free nanocrystalline Bi₄Ti₃O₁₂ with average particle size of 21 nm can be obtained by calcinating the precursor at 750 °C, which is 50 °C lower than traditional solid reaction. The relative density of the ceramic reaches 96% at 1000 °C and shows no evident decrease until 1100 °C. The broadened sintering temperature range and the lower loss tangent of the ceramic show good sintering activity of the nanopowders.     

Phase Formation and Enhanced Dielectric Response of Y2/3Cu3Ti4O12 Ceramics Derived from the Sol–Gel Process

Y_2/3Cu₃Ti₄O₁₂ (YCTO) ceramics were successfully synthesized by sol–gel method (SG) and solid‐state method (SS), respectively. The optimized processing parameters for the syntheses of precursor powders by sol–gel process were determined as follows: the Ti(OC₄H₉)₄ concentration was 0.50 mol/L, the CH₃COOH volume was 8 mL, and the volume percentage of H₂O was 11.2%. Particularly, on the basis of XRD and TG‐DSC analyses, the phase formation temperature of YCTO‐SG was at least 100°C lower than that of YCTO‐SS. YCTO‐SG ceramics sintered at 1060°C for 25 h showed fine‐grained microstructure, and higher dielectric constant (ε′ ≈ 5.24 × 10⁴) at 1 kHz compared to YCTO‐SS ceramics (ε′ ≈ 0.93 × 10⁴). The higher dielectric constant of the YCTO‐SG ceramics was attributed to the grain size effect. Furthermore, the YCTO‐SG ceramics showed a distinct high‐temperature (>300°C) relaxor‐like behavior. According to the calculated activation energy value, the single ionization of oxygen vacancies was responsible for the conduction and dielectric anomaly behaviors of YCTO‐SG ceramics.     

Fabrication of Transparent Dysprosium Aluminum Garnet (Dy3Al5O12) Ceramics via a Solid‐State Reaction Method

Polycrystalline, transparent Dy₃Al₅O₁₂ ceramics were firstly fabricated by a solid‐state reaction method using high‐purity Dy₂O₃ and Al₂O₃ powders. The fully dense Dy₃Al₅O₁₂ ceramic with an average grain size of less than 10 μm was obtained by vacuum sintering at 1820°C for 6 h. The in‐line transmittance of the optimized sample reaches 80% in the visible region. Scanning electron microscopy reveals that no secondary phases and almost no pores are observed at grain boundaries or triple junctions, and the fracture mode of the ceramic is mainly transgranular. The Dy₃Al₅O₁₂ ceramic is promising for magneto‐optical applications. Verdet constant of the Dy₃Al₅O₁₂ transparent ceramic is as high as ?0.41 min·(Oe·cm)^?1.     

Effects of sintering temperature on the internal barrier layer capacitor (IBLC) structure in CaCu3Ti4O12 (CCTO) ceramics

The formation of the internal barrier layer capacitor (IBLC) structure in CaCu₃Ti₄O₁₂ (CCTO) ceramics was found to be facilitated by the ceramic heat treatment. Electrically insulating grain boundary (GB) and semi-conducting grain interior areas were characterized by impedance spectroscopy to monitor the evolution of the IBLC structure with increasing sintering temperature T_S (975–1100 °C). The intrinsic bulk and GB permittivity increased by factors of ≈2 and 300, respectively and the bulk resistivity decreased by a factor of ≈10³. These trends were accompanied by increased Cu segregation from the CCTO ceramics as detected by scanning electron microscopy and quantitative energy dispersive analysis of X-rays. The chemical changes due to possible Cu-loss in CCTO ceramics with increasing T_S are small and beyond the detection limits of X-ray absorption spectroscopy near Cu and Ti K-edges and Raman Spectroscopy.     

Liquid‐phase sintering,microstructural evolution,and microwave dielectric properties of Li2Mg3SnO6–LiF ceramics

The liquid‐phase sintering behavior and microstructural evolution of x wt% LiF aided Li₂Mg₃SnO₆ ceramics (x = 1‐7) were investigated for the purpose to prepare dense phase‐pure ceramic samples. The grain and pore morphology, density variation, and phase structures were especially correlated with the subsequent microwave dielectric properties. The experimental results demonstrate a typical liquid‐phase sintering in LiF–Li₂Mg₃SnO₆ ceramics, in which LiF proves to be an effective sintering aid for the Li₂Mg₃SnO₆ ceramic and obviously reduces its optimum sintering temperature from ~1200°C to ~850°C. The actual sample density and microstructure (grain and pores) strongly depended on both the amount of LiF additive and the sintering temperature. Higher sintering temperature tended to cause the formation of closed pores in Li₂Mg₃SnO₆‐x wt% LiF ceramics owing to the increase in the migration ability of grain boundary. An obvious transition of fracture modes from transgranular to intergranular ones was observed approximately at x = 4. A single‐phase dense Li₂Mg₃SnO₆ ceramic could be obtained in the temperature range of 875°C‐1100°C, beyond which the secondary phase Li₄MgSn₂O₇ (<850°C) and Mg₂SnO₄ (>1100°C) appeared. Excellent microwave dielectric properties of Q × f = 230 000‐330 000 GHz, ε_r = ~10.5 and τ_f = ~?40 ppm/°C were obtained for Li₂Mg₃SnO₆ ceramics with x = 2‐5 as sintered at ~1150°C. For LTCC applications, a desirable Q × f value of ~133 000 GHz could be achieved in samples with x = 3‐4 as sintered at 875°C.