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Low temperature preparation of CaCu3Ti4O12 ceramics with high permittivity and low dielectric loss
Affiliation:1. School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China;2. The Center of Collaboration and Innovation, Jiangxi University of Technology, Nanchang 330098, China;1. University of Applied Sciences Jena, Department of SciTec, 07745 Jena, Germany;2. Fraunhofer Institute of Ceramic Technologies and Systems, 07629 Hermsdorf, Germany;3. Ilmenau University of Technology, Department of Electrical Engineering & Information Technology, 98693 Ilmenau, Germany;1. State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, PR China;2. State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, PR China;1. Smart Materials Analytical Research and Technology (SMART) Lab, Department of Physics, St. Berchmans College, Changanacherry, 686101 Kerala, India;2. Department of Physics, Kuriakose Elias College, Mannanam, Kottayam, Kerala, India;3. Principal, Mary Matha Arts and Science College, Mananthavady, Wayanad, 670645 Kerala, India;1. Faculty of Materials and Energy, Southwest University, Chongqing 400715, China;2. College of Electromechanical Engineering, Chongqing College of Humanities, Science and Technology, Chongqing 401524, China
Abstract:Low temperature preparation of CaCu3Ti4O12 ceramics with large permittivity is of practical interest for cofired multilayer ceramic capacitors. Although CaCu3Ti4O12 ceramics have been prepared at low temperatures as previously reported, they have rather low permittivity. This work demonstrates that CaCu3Ti4O12 ceramics can not only be prepared at low temperatures, but they also have large permittivity. Herein, CaCu3Ti4O12 ceramics were prepared by the solid state reaction method using B2O3 as the doping substance. It has been shown that B2O3 dopant can considerably lower the calcination and sintering temperatures to 870 °C and 920 °C, respectively. The relative permittivity of the low temperature prepared CaCu3Ti4?xBxO12 ceramics is about 5 times larger than the previously reported results in the literature. Furthermore, the dielectric loss of the CaCu3Ti4?xBxO12 ceramics is found to be as low as 0.03. This work provides a beneficial base for the future commercial applications of CaCu3Ti4O12 ceramics with large permittivity for the cofired multilayer ceramic capacitors.
Keywords:Low temperature sintering  Dielectric property  Ceramic
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