纳米WO3薄膜的制备方法及其性质研究

纳米WO3薄膜是一种典型的功能性纳米材料,在电致变色、气敏性、共催化及光致变色等方面有着广阔的应用前景。本文综述了纳米WO3薄膜的几种常用制备方法并进行了比较,最后对纳米WO3薄膜的发展前景作出展望。     

WO3/Bi2WO6复合薄膜的制备及其光电化学性能

以导电玻璃为基底采用水热法制备了WO3纳米片薄膜,再通过溶剂热法改变不同溶剂热反应时间(6、8和10 h)在WO3纳米片薄膜上生长Bi2WO6制备了WO3/Bi2WO6复合薄膜.利用XRD、SEM、UV-Vis、光电流、光电催化和交流阻抗对WO3/Bi2WO6复合薄膜的结构和光电性能进行表征与测定.结果表明,WO3纳米片薄膜的光电流密度为0.74 mA/cm2,对质量浓度为6.0 mg/L亚甲基蓝的光电催化效率为47.9％.不同WO3/Bi2WO6复合薄膜的光电化学性能均优于单一WO3纳米薄膜,且溶剂热反应时间为8 h的WO3/Bi2WO6复合薄膜具有最高的光电流密度(1.22 mA/cm2)和最优的光电催化效率(58.6％).WO3/Bi2WO6复合薄膜有效降低了复合薄膜内部电子阻抗,增加了有效光电化学反应位点,显著提升了光电化学性能.     

纳米WO_3薄膜的制备方法及性质研究

介绍和分析了制备纳米WO3薄膜的主要方法及各自优缺点;对纳米WO3的性质研 究现状作了简要概述,并提出了纳米WO3薄膜的发展前景。     

纳米WO3薄膜的制备方法及性质研究

介绍和分析了制备纳米WO3薄膜的主要方法及各自优缺点;对纳米WO3的性质研究现状作了简要概述,并提出了纳米WO3薄膜的发展前景.     

WO3/ZnWO4复合薄膜的制备及其光电化学性能研究

摘要：采用水热法在导电玻璃(FTO)上制备WO3纳米薄膜,然后同样使用水热法并改变水热反应时长(1h,3h,5h)在WO3纳米薄膜上成功制备WO3/ZnWO4复合薄膜。利用X射线衍射和扫描电子显微镜对WO3/ZnWO4复合薄膜样品的组成结构及形貌进行分析。并对WO3/ZnWO4复合薄膜样品进行吸收光谱测试、光电流测试、光电催化测试和交流阻抗测试,结果表明WO3/ZnWO4复合薄膜样品相较于单一WO3纳米薄膜,具有更好的光吸收特性、更优秀的光电流特性和显著提升的光电催化活性。且水热反应3h的WO3/ZnWO4复合薄膜样品相较于水热反应1h和5h的WO3/ZnWO4复合薄膜样品具有最高的光电流密度和最优的光电催化效率。     

WO3/ZnWO4复合薄膜的制备及其光电化学性能

采用水热法在导电玻璃(FTO)上制备WO3纳米薄膜,然后通过改变水热反应时长(1、3、5 h)在WO3纳米薄膜上成功制备了WO3/ZnWO4复合薄膜.利用XRD和SEM对WO3/ZnWO4复合薄膜样品的组成结构及形貌进行分析.并对WO3/ZnWO4复合薄膜样品进行吸收光谱测试、光电流测试、光电催化测试和交流阻抗测试.结...     

纳米WO3薄膜的制备及掺杂研究

纳米WO3薄膜在电致变色、气敏材料、共催化剂领域具有广阔的应用前景。综述了纳米WO3薄膜的制备及掺杂对其变色性质的影响。     

WO3薄膜材料的气敏性能

研究了WO3薄膜材料的制备工艺、气敏性能和贵金属表面改性。以钨酸为原料、加入有机络合剂的无机盐溶胶-凝胶(inorganic solgel method,ISG)法合成了WO3薄膜。确定了最佳ISG工艺制度,即以柠檬酸为络合剂,10次成膜,预处理温度为600℃,烧成温度为650℃。实验结果表明：WO3是一种n型半导体,其最佳工作温度为550℃。通过掺杂贵金属制备了Pt/WO3薄膜材料,有效地改善了薄膜的气敏性能,可以在600℃下获得高达4100的灵敏度。WO3的气敏机理为表面控制型。     

WO_3纳米棒的水热合成及其光敏特性

以钨酸钠为原料,硫酸钾为辅助盐,在强酸性反应体系通过水热法合成了WO3纳米棒。利用XRD、SEM、TEM和SAED对试样进行分析,研究结果表明:在水热法体系中合成WO3纳米棒时,随着pH值的增加、反应温度的升高和反应时间的延长,它们都有利于合成WO3纳米棒。在pH值为1.5、反应温度为240℃和反应时间72.0h下合成直径小于100nm的晶态WO3纳米棒,此WO3纳米棒径向分布较均匀。对不同条件下水热法合成的WO3进行紫外可见光的吸收光谱分析可得,随着pH值的增加、反应温度的升高和反应时间的延长,获得的WO3的光吸收能力逐渐是增加的。特别是WO3纳米棒具有良好的光吸收能力。     

电致变色器件中WO3薄膜厚度的选择

WO3(三氧化钨)薄膜厚度的选择对电致变色器件性能有至关重要的作用。通过TFCalc软件理论计算WO3薄膜褪色态、着色态透过光谱及其光学调制幅度变化;通过在FTO(氧化锡掺氟)玻璃上制备氧化钨薄膜,研究分析不同厚度氧化钨晶体结构与光学调制幅度相关性。对比研究发现:WO3厚度的选择应根据着色态透过率和实际的光学调制幅度确定,光学理论计算WO3薄膜的调制幅度有一定的局限性,这与晶态WO3薄膜的结构发生变化有关。     

热分解法制备纳米WO_3的结构特征及其分散行为研究

以钨酸铵为原料,在350～600℃不同温度下,用热分解法制备了纳米WO3。用透射电子显微镜、X射线衍射与电子衍射并结合热分析法,研究了热分解温度对纳米WO3的粒径大小、形状、晶型的影响,发现钨酸铵在225～375℃吸热分解,在400℃时完全分解为简单六方结构WO3和简单单斜结构WO3两相混合物,简单六方结构WO3在404℃左右向简单单斜结构WO3转变,500℃与600℃热分解产物都是简单单斜结构WO3。WO3粒径随温度升高而增大,分解温度从400℃升至600℃时,WO3粒径从20nm增大到100nm左右。用表面活性剂对纳米WO3进行表面修饰,发现两性型十二烷基二甲基甜菜碱可提高纳米WO3在水溶液与甲苯中的分散稳定性,沉降速度降低50%。     

BiFeO3薄膜研究进展

BiFeO3是少数的在室温下同时具有铁磁性和铁电性的铁磁电材料之一,在信息存储、传感器和自旋电子器件等方面都有潜在的应用前景.本文通过对BiFeO3薄膜的结构、磁性起源、制备工艺和应用领域等方面的综述,提出并设计了水热法和仿生法这两种新的制备BiFeO3薄膜的湿化学方法,并展望了BiFeO3薄膜今后的研究和发展趋势.     

Monolayer-Mediated Deposition of Tantalum(V) Oxide Thin Film Structures from Solution Precursors

Integration of oxide thin films with semiconductor substrates is a critical technology for a variety of microelectronic memory and circuit applications. Patterned oxide thin film devices are typically formed by uniform deposition followed by postdeposition ion-beam or chemical etching in a controlled environment. This paper reports details of an ambient atmosphere technique which allows selective deposition of dielectric oxide thin layers without postdeposition etching. In this method, substrate surfaces are selectively functionalized with hydrophobic self-assembled monolayers of octadecyltrichlorosilane by microcontact printing (μ-CP). Sol-gel deposition of ceramic oxides on these functionalized substrates, followed by mild, nonabrasive polishing, yields high-quality, patterned oxide thin layers only on the unfunctionalized regions. A variety of micrometer-scale dielectric oxide devices have been fabricated by this process, with lateral resolutions as fine as 4 μm. In this paper, we describe the solution chemistry, evolution of microstructure, and electrical properties of Ta₂O₅ thin films, as well as the stress-related mechanism which enables selective de-adhesion and resultant patterning. Selectively deposited, 80-120 nm thick Ta₂O₅ thin film capacitors were crystallized on platinized silicon at 700-800°C, and had dielectric constants of 18-25 depending upon the processing conditions, with 1 V leakage current densities as low as 2 × 10⁻⁸ A/cm². The ability to selectively deposit Ta₂O₅ and other electrical ceramics (such as LiNbO₃ and PbTiO₃) on a variety of technologically important substrate materials suggests broad potential for integrated circuit and hybrid microelectronics applications.     

Printed organic transistors and molded plastic lasers

We describe the use of microcontact printing and elastomeric molding for fabricating two types of devices that incorporate thin films of active organic materials: thin film transistors and plastic lasers. The simplicity of these techniques and the good performance of devices formed with them suggest their potential utility for emerging applications of organic materials in electronic and optical systems.     

Characterization of Chemical Solution Deposition-Derived Lead Hafnate Titanate Thin Films

In this paper, lead hafnate titanate (PHT) was derived by chemical solution deposition (CSD) and characterized as a thin film material. The thin films were tested for the usage as a ferroelectric thin film in view of Ferroelectric Random Access Memory (FRAM) devices and compared with an equivalent lead zirconate titanate (PZT) thin film, which was prepared under the same conditions. After determining the thickness and the morphology of the PHT films, electronic measurements were performed to investigate this material as a promising candidate in view of FRAM applications due to failure mechanisms like fatigue and imprint.     

Preparation of plasma‐polymerized 3‐quinolinecarbonitrile and its photo(electro)‐luminescence properties

A novel plasma‐polymerized 3‐quinolinecarbonitrile (PP3QCN) thin film was prepared by plasma polymerization of 3‐quinolinecarbonitrile (3QCN) for the first time. The PP3QCN thin films show a blue emission with a narrow peak at ～ 475 nm and there appeared a relatively high intensity of PL peak. The EL devices with PP3QCN as electroluminescent layer sandwiched between ITO and Al were fabricated. It was found that the ITO/PP3QCN/Al devices also show a blue emission and PP3QCN thin film was stable and appropriate for the electroluminescent layer. The external quantum efficiency of ITO/PP3QCN/Al devices can reach to 0.0068%. The plasma‐polymerized conjugated polynitrile thin film obtained from 3QCN precursor might be a promising material for application in LED and photodiode device. © 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2009     

球磨参数对球磨法制备纳米WO3粉的影响分析

本文采用球磨法制备纳米三氧化钨陶瓷粉末,系统研究了球磨参数对粉末粒度的影响。结果表明,机械球磨法可以制取纯度较高的三氧化钨细粉;球磨时间和球料比以颗粒尺寸趋于稳定的范围为佳,盲目延长时间、增大球料比起不到细化作用,相反会增加杂质的引入。     

Large recoverable energy density with excellent thermal stability in Mn‐modified NaNbO3‐CaZrO3 lead‐free thin films

Effect of Mn dopant on energy storage properties in lead‐free NaNbO₃?0.04CaZrO₃ (NNCZ) thin films was investigated. The leakage current was largely suppressed, whereas dielectric constant, breakdown fields, and the difference between maximum polarization and remnant polarization were improved significantly by Mn doping, resulting in a large enhancement of energy storage performance. A large recoverable energy storage density of ~19.64 J/cm³ and an excellent thermal stability (from 30 to 160°C) were simultaneously achieved in the NNCZ thin film with 1 mol% Mn addition. Our results ascertain the great potential of NNCZ lead‐free thin films for the applications in energy storage devices over a wide temperature range.