紧凑型多陷波超宽带天线设计与研究

提出了一款紧凑型多陷波特性超宽带天线,该天线由圆形贴片和改进的接地板组成。采用在辐射贴片上开两个圆弧状U形槽和接地板上开一个U形窄缝隙的结构使其具有多陷波特性。天线的体积仅为32 mm′25 mm′1.6 mm,结构紧凑。仿真与测试结果表明:该天线工作带宽为2.8 ~ 16 GHz,实现了3.2~3.8 GHz、4.5~5.5 GHz 和7.2~8.6 GHz 3个频段的陷波特性,有效阻隔了WiMAX(3.3~ 3.6 GHz)、大容量微波通信频段(4.5~5 GHz)、部分WLAN(5.1~5.35 GHz)、X波段(7.25~7.75 GHz)和国际电信联盟(ITU)波段(8.01~8.5 GHz)窄带信号的干扰。除陷波频段外该天线具有良好性能和辐射方向性,更适合应用于超宽带系统。     

一种紧凑型超宽带双陷波天线设计与研究

超宽带(UWB)系统的工作频段与现有的许多窄带系统频段相互重叠,因此各个系统信号之间存在潜在的干扰。针对上述问题提出了一种紧凑型超宽带双陷波天线。天线由一个圆形辐射贴片构成并通过50W的微带线进行馈电。接地板和传统的接地板相比被截短了,以提高天线的阻抗带宽。通过在辐射贴片上刻蚀H 型槽来实现天线的双陷波功能,并在微带馈线中引入了嵌入式谐振回路(ERC)结构,加大了天线的陷波深度和阻带宽度,陷波性能好于同频段的双陷波天线。仿真和测试结果表明,天线在3.1～4.2 GHz 以及5.0～6.6GHz 具有陷波特性,有效地避免了WiMAX 和WLAN 频段信号的干扰。同时在2.8 ~10.7 GHz 的其它频段上具有良好的阻抗匹配和较好辐射方向特性。天线的尺寸为34mm*26mm*1.6 mm,结构较为紧凑。     

一种新型小尺寸三陷波超宽带天线设计

文中提出了一种新型小尺寸具有三陷波特性的UWB天线。所设计的天线基本几何结构由50 Ω馈电线、圆形辐射贴片、缺陷地和一对开口谐振环组成,通过在天线的圆形辐射贴片上内嵌一对Y型贴片、地板上蚀刻出U型贴片和一对开口谐振环实现三陷波特性,天线的尺寸为30 mm×30 mm×16 mm。仿真和测试结果表明,该天线29~107 GHz的频段内回波损耗＜-10 dB,在37~42 GHz、515~5825 GHz和79~84 GHz3个频段内具有陷波特性,分别有效抑制了C频段的卫星系统、WLAN系统和X频段卫星系统对超宽带系统的干扰。在除3个阻带频段外的其余UWB工作频段范围内,有着良好的辐射方向特性和稳定的增益。仿真结果和实验结果表现出了良好的一致性。     

一种具有三阻带特性的超宽带天线的设计与研究*

提出了一种紧凑型共面波导馈电的具有三阻带特性的超宽带天线。所设计天线的基本几何结构由共面波导(CPW)馈电线、菱形辐射贴片和矩形宽缝隙组成。通过在辐射贴片上刻蚀一个U型槽,以及在共面波导的接地面上增加两对L型的寄生旁枝结构来实现天线的三陷波特性。天线尺寸为32mm×32mm×0.508mm。仿真和实验结果表明,该天线在2.6~11.5GHz的频段内电压驻波比小于2,在3.15~3.80GHz、5.20~5.80GHz和8.2~8.7GHz三个频段内具有陷波特性,分别有效阻隔了Wi MAX系统、WLAN系统和ITU 8GHz频段信号对于超宽带(UWB)系统的干扰。在除三个阻带频段外的其余UWB工作频段范围内,具有良好的辐射方向特性和稳定的增益。仿真结果和实验结果表现出良好的一致性。     

具有双陷波特性的蜂窝结构分形超宽带天线

提出了一款具有双陷波特性的蜂窝结构分形超宽带（ultra-wideband，UWB）天线，采用二阶蜂窝结构作为辐射贴片和缺陷地结构接地板实现良好的超宽带特性.通过在辐射贴片上挖去正六边形和矩形宽缝隙并引入对称鱼钩形枝节，在馈线处刻蚀倒U形窄缝隙产生了3.27~4.27 GHz和7.2~8 GHz两个频段的陷波特性.天线在2.8~11.6 GHz的频段内，可有效抑制WiMAX、C波段卫星和X波段卫星窄带系统的干扰.仿真和实测结果基本吻合，表明该天线适合应用于各种UWB通信系统.     

具有三陷波特性的类Sierpinski分形超宽带天线

为避免窄带通信系统对超宽带(ultra-wideband,UWB)系统的干扰冲突,提出一款具有三陷波特性的类Sierpinski分形UWB天线.辐射贴片采用圆环与五角星形嵌套迭代的2阶类Sierpinski分形结构,并采用缺陷地结构接地板以实现良好的UWB特性.通过在分形结构的上部添加对称倒L形开路枝节,在微带馈线两侧添加对称L形开路枝节,并在馈线处刻蚀倒π形窄缝隙产生了4.5～4.8 GHz、7.2～7.8 GHz和8.0～8.5 GHz三个频段的陷波特性.仿真和实测结果表明,天线在3.1～18.1 GHz的频段内,可有效抑制国际卫星波段、X卫星波段和国际电信联盟波段等窄带系统的干扰.该天线除滤波频段内,在通带频段内有较稳定的增益和全向辐射特性,可用于各种UWB系统中.     

具有三陷波特性的类Sierpinski分形超宽带天线

为避免窄带通信系统对超宽带(ultra-wideband,UWB)系统的干扰冲突,提出一款具有三陷波特性的类Sierpinski分形UWB天线.辐射贴片采用圆环与五角星形嵌套迭代的2阶类Sierpinski分形结构,并采用缺陷地结构接地板以实现良好的UWB特性.通过在分形结构的上部添加对称倒L形开路枝节,在微带馈线两侧添加对称L形开路枝节,并在馈线处刻蚀倒π形窄缝隙产生了4.5～4.8 GHz、7.2～7.8 GHz和8.0～8.5 GHz三个频段的陷波特性.仿真和实测结果表明,天线在3.1～18.1 GHz的频段内,可有效抑制国际卫星波段、X卫星波段和国际电信联盟波段等窄带系统的干扰.该天线除滤波频段内,在通带频段内有较稳定的增益和全向辐射特性,可用于各种UWB系统中.     

具有双陷波特性的六边形分形超宽带缝隙天线

提出一款具有双陷波特性的六边形分形超宽带缝隙天线,天线总尺寸为32 mm×16 mm×1.6 mm,采用六边形和三角形迭代嵌套的3阶分形结构作为辐射贴片,并采用缺陷地结构作为接地板,实现了3.0~15.26 GHz的超宽带带宽。在馈线两侧引入对称L形开路枝节,并在接地板上刻蚀U形窄缝隙产生了4.71~5.87 GHz和7.06~7.81 GHz两个频段的陷波特性,有效抑制WLAN(5.150~5.825 GHz)和下行卫星系统频段(DSS:7.25~7.75 GHz)的干扰。在通带频段内的增益范围为2~7.5 dBi。仿真和实测结果基本吻合,表明该天线可用于超宽带通信系统。     

基于液晶聚合物的双陷波可穿戴天线的设计

基于超薄液晶聚合物柔性材料,设计了一种满足无线体域网(WBAN)需求的双陷波UWB可穿戴天线。该天线由椭圆形贴片、锥形三叉戟共面馈线和梯形地板组成。通过分别在辐射贴片上蚀刻椭圆开口谐振环和在共面馈线上蚀刻n形槽以实现双陷波特性。该天线采用共面波导的馈电方式,具有良好的共面性,易于与载体共形。经网络矢量分析仪测试结果表明,该天线在3. 1~10. 6 GHz的超宽带频段内回波损耗小于-10 d B的同时,在4. 88~6. 15 GHz和7. 55~8. 51 GHz内拥有双陷波特性,可抑制WiMAX和ITU 8 GHz频段对系统产生的干扰。与以往的可穿戴天线相比,该天线厚度仅为0. 1 mm,且柔性可弯曲。此外,对天线在弯曲情况下进行测试,天线特性基本保持不变。     

五陷波超宽带天线的研究与设计

为滤除窄带信号对超宽带通信系统的干扰,研究并设计了一种具有五个陷波特性的超宽带天线。采用微带线馈电,在辐射贴片上刻蚀一个椭圆形开环谐振器,并在馈线旁制作了四个不同尺寸的U 形寄生短截线,以实现天线的陷波特性,天线尺寸为30 mm×40 mm×0.8 mm。仿真实验验证了天线工作频率范围为2.8~12 GHz;有效滤除了WiMAX 波段(2.94~3.42 GHz)、INSAT 波段(4.42~4.53 GHz)、WLAN 波段(5.32~5.5 GHz)、X 波段上行频(7.01~7.27 GHz)和X 波段下行频(7.57~8.05 GHz)。实测数据表明,天线的工作频段、方向性、增益及五个陷波特性等性能指标良好。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.