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归纳了接触器、开关、断路器等低压电器产品中几种常用的合金触头,并介绍了它们的性能、特点。对这些电器产品所用的不同触头材料银镍合金、银石墨合金、银钨合金、银氧化镉合金、银氧化锡合金等的差别进行了分析,依据多年实践工作经验,总结了对不同触头材料的应用与选择。 相似文献
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通过模拟实验机进行直流灯负载下银镍系列触头材料的电性能实验,观察了不同成分的银镍触头材料的电侵蚀情况,总结分析了它们在实验中表现出的电侵蚀特点。提出了改进银镍触头材料性能的思路。 相似文献
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采用银、铜板材热轧生产银/铜复合双金属电触头材料,工艺简单,生产率高。银、铜的相互扩散形成了紧密的复合界面层,结合强度大于10Kg/mm~2,结合牢固,保证了使用的可靠性。材料性能均符合机械工业部“Ag/Cu复合双金属触头暂行技术条件(草案)”标准。该触头材料应用于交流接触器、继电器上具有纯银触头的同等电气性能。与同类纯银触头比较,采用轧制银/铜复合触头可节约白银40~60%,价格降低10~30%,具有显著的经济效益。 相似文献
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本文介绍国外近期在银金属氧化物触头材料制造方面的一个新论点。该论点认为:银金属氧化物触头材料在实际开关中的运行性能不是决定于氧化物的种类,而是决定于材料的制造工艺和添加物,即决定于电弧作用后触头表层材料的微观结构。 相似文献
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In this paper, we present a novel non-uniform shaped cantilever based DC contact radio frequency microelectromechanical systems (RF MEMS) switch. This switch can be employed for various wireless mobile applications in frequency range of DC-10 GHz as it shows excellent RF characteristics with low actuation voltage. The design is optimized in the terms of electrostatic actuation mechanism, which included switch beam thickness, beam gap, spring shape and materials. Also, it’s optimized shape and size of contact geometry and material ensures the high reliability, high isolation and very low insertion loss. The main features of this switch are simplicity of structure, reliability of contact, excellent RF characteristics, low actuation voltage and excellent figure of merit. We investigate the proposed design with Coventorware software for electromechanical and electromagnetic analysis and, get very promising results. The paper briefly outlines the design of RF MEMS switch and also focuses on the analysis of various switching parameters. 相似文献
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触头元件由紫铜(铬铜)与(CuW70)组成,在开关设备中起着关键作用,承受高温、高压、耐磨,并有一定的强度要求(冲击),其焊接质量的好坏直接关系到开关产品质量的优劣。笔者单位对触头焊接多采用火焰钎焊,效率低,合格率低,严重地制约着生产。为了解决这个难题,笔者通过大量工艺试验和详细论证认为,高速局部加热,氧化少、硬度降低小,效率高的中频感应加热是触头焊接的最有效的方法。 相似文献
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分析了纳米材料与常规材料在热学性能和机械性能上的差异,综述了纳米触头材料在截流水平、抗电弧侵蚀和耐压能力等电性能研究上取得的进展,并对已有研究成果进行了概括和总结。结果表明:相对于同种配比的常规触头材料,纳米CuCr和AgFe触头材料的截流水平低于常规触头材料;纳米CuCr和AgFe的直流电弧稳定性高于常规触头材料,直流电弧寿命大于常规触头材料;纳米CuCr触头材料的耐压能力高于常规触头材料;纳米AgSnO2和AgNi触头材料的抗电弧侵蚀性能优于常规触头材料。因此,在今后对纳米触头材料的研究和开发过程中,加强纳米触头材料制备工艺研究和纳米触头材料的理论研究,有利于提高纳米触头材料电性能。 相似文献
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电力市场环境下后备保护动作的经济性评估及责任承担 总被引:6,自引:4,他引:6
后备保护动作有可能导致故障切除设备和故障设备分属不同的市场参与者,从而影响到经济上相互独立的不同公司的经济利益。该文分析了现有的远后备保护和近后备附加断路器失灵保护的后备保护动作切除故障的3种后果:只对故障设备所属公司本身产生影响;对另一相关公司产生影响;对另一相关公司产生影响并进而影响该相关公司对其他公司的售(购)电情况,文中给出了后备保护不同配置方式下动作后果的经济性评估方法;提出了由故障设备所属公司各自承担责任,后备保护动作区内各公司互相承担责任及补贴承担责任等3种后备保护经济责任承担的模式,供当前厂、网分开的电力系统中后备保护动作造成的经济责任分担时参考。 相似文献
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中国电器工业协会通用低电器分会 《电器工业》2008,(3):10-15
一、低压电器行业统计数据综述:
1.产值完成情况:从行业118家企业上报的数据统计汇总来看,当前,低压电器行业共完成工业总产值4590718.25万元,销售产值4424680.07万元。在上报的118家企业中,工业总产值完成情况按照大小划分了几个档次,其中上亿元的企业共有56家,公布如下:(注:①部分企业上报的产值中可能包含其他电器的产值和非电器产值;②企业排列顺序未按产值大小进行。) 相似文献
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Several emerging nonvolatile memories (NVMs) such as ferroelectric memory, magnetoresistive rams and ovonic universal memory are being developed for possible applications. Resistive random access memory (RRAM) is another interesting competitor in the class of NVMs. The RRAM is based on a large change in electrical resistance when the memory film is exposed to voltage or current pulses, and can keep high or low resistance states without any power. The ideal RRAM should have the superior properties of reversible switching, long retention time, multilevel switching, simple structure, small size, and low operating voltage. Perovskite oxides, transition metal oxides, and molecular materials were found to have resistive memory properties. This presentation reviews the ongoing research and development activities on future resistance NVMs technologies incorporating these new memory materials. The possible basic mechanisms for their bistable resistance switching are described. The effect of processing, composition, and structure on the properties of resistive memory materials and consequently the devices are discussed. 相似文献
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ABSTRACTImpedance analysis was used to characterize the properties of Piezoelectric Shear Mode Inkjet Actuators. Ceramic actuators poled parallel to the channel walls exhibit good performance. Applying high voltage the actuators can be depolarized at high temperature or even re-poled perpendicular to the channel walls. This limits the drive pulse and the bias voltage below the coercive voltage. The leakage current also has been studied with various conditions. For the ferroelectric ceramic materials, the Schottky barrier also can be measured at definite voltage and temperature ranges, the corresponding Barrier for the Al/PZT contact is 0.98 eV. A pronounced low-temperature dielectric relaxation process was observed between 100–150 K; the relaxation rate fellows the Arrhenius law, the fitted activation energy is 0.194 eV. The resonance frequency increases as decreasing the temperature because of increasing for the stiffness coefficient at low temperature. 相似文献
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简要介绍了中、高压输配电系统中真空断路器(VCB)用CuCr触头材料的现状和发展,讨论了近年来在解决工程应用中因真空断路器小型化、开发低接触力真空断路器和高压用真空断路器等引发的触头材料接触熔焊问题以及如何应对市场降低触头产品价格的压力实现触头材料制造企业的可持续发展。 相似文献