A 10 b 25 MS/s 4.8 mW 0.13 µm CMOS ADC with switched‐bias power‐reduction techniques

This paper proposes a 10 b 25 MS/s 4.8 mW 0.13 µm CMOS analog‐to‐digital converter (ADC) for high‐performance portable wireless communication systems, such as digital video broadcasting, digital audio broadcasting, and digital multimedia broadcasting (DMB) systems, simultaneously requiring a low‐voltage, low‐power, and small chip area. A two‐stage pipeline architecture optimizes the overall chip area and power dissipation of the proposed ADC at the target resolution and sampling rate, while switched‐bias power‐reduction techniques reduce the power consumption of the power‐hungry analog amplifiers. Low‐noise reference currents and voltages are implemented on chip with optional off‐chip voltage references for low‐power system‐on‐a‐chip applications. An optional down‐sampling clock signal selects a sampling rate of 25 or 10 MS/s depending on applications in order to further reduce the power dissipation. The prototype ADC fabricated in a 0.13 µm 1P8M CMOS technology demonstrates a measured peak differential non‐linearity and integral non‐linearity within 0.42 LSB and 0.91 LSB and shows a maximum signal‐to‐noise‐and‐distortion ratio and spurious‐free dynamic range of 56 and 65 dB at all sampling frequencies up to 25 MHz, respectively. The ADC with an active die area of 0.8 mm² consumes 4.8 and 2.4 mW at 25 and 10 MS/s, respectively, with a 1.2 V supply. Copyright © 2008 John Wiley & Sons, Ltd.     

A novel analog switch for high‐precision switched‐capacitor applications

The performance of a switched‐capacitor circuit strongly depends on its analog switches. This paper introduces a new technique to design a high‐precision analog metal‐oxide‐semiconductor switch for switched‐capacitor applications. The accuracy of analog switches is a critical parameter to determine overall performance of the discrete‐time analog systems. To satisfy the accuracy requirements of the switch, a novel technique to minimize the charge injection and clock feedthrough errors by using a very simple structure is proposed. Moreover, an innovative approach to increase the OFF resistance of the switch and consequently minimizing its leakage current is presented. To evaluate the performance of the proposed switch, simulations are done in TSMC 0.18μm standard complementary metal‐oxide‐semiconductor technology with BSIM3V3 device models. The ON and OFF resistances of the switch are one of the most important factors that should be considered while investigating analog switches. The ON resistance of the proposed switch is less than 560Ω over entire input signal range which completely satisfies the tracking bandwidth requirements. In addition, since the proposed switch provides an ultrahigh OFF resistance in the range of several GΩs, the leakage current of the proposed switch is negligible. Simulation results also show that switch‐induced errors are significantly eliminated by using the proposed cancellation technique. The output error charge due to charge injection and clock feedthrough over a wide range of input signal variation is very low (less than 1.6 fC). Moreover, simulation results show that the proposed switch achieves signal to noise plus distortion ratio of 80.55 dB, effective number of bits of 13.08, total harmonic distortion of ?81.41 dB, and spurious‐free dynamic range of 87.7 dB for a 2.5‐MHz sinusoidal input of 800‐mV peak‐to‐peak amplitude at 200‐MHz sampling rate with a 1.8‐V supply voltage. Consequently, the simulation results verify that the proposed switch can significantly improve the dynamic and static performances of a switched‐capacitor circuit.     

0.3‐V bulk‐driven programmable gain amplifier in 0.18‐µm CMOS

A new solution for an ultra low voltage bulk‐driven programmable gain amplifier (PGA) is described in the paper. While implemented in a standard n‐well 0.18‐µm complementary metal–oxide–semiconductor (CMOS) process, the circuit operates from 0.3 V supply, and its voltage gain can be regulated from 0 to 18 dB with 6‐dB steps. At minimum gain, the PGA offers nearly rail‐to‐rail input/output swing and the input referred thermal noise of 2.37 μV/Hz^1/2, which results in a 63‐dB dynamic range (DR). Besides, the total power consumption is 96 nW, the signal bandwidth is 2.95 kHz at 5‐pF load capacitance and the third‐order input intercept point (IIP₃) is 1.62 V. The circuit performance was simulated with LTspice. Copyright © 2016 John Wiley & Sons, Ltd.     

A 3.6‐mW 6‐GHz current‐reuse VCO‐buffer with improved load drivability in 65‐nm CMOS

A new current‐reuse voltage‐controlled oscillator (VCO)‐buffer with enhanced load drivability is proposed. It incorporates a PMOS‐based source follower stacked atop a NMOS‐based LC VCO to share the bias current, while preventing the voltage stress at any oscillation node from exceeding the 1.2‐V technology voltage limit. Also, ac‐coupling networks are avoided between the VCO and buffer, improving the Q of the LC tank while minimizing parasitics. With internal buffering, the VCO can directly drive up a 50‐Ω load for testing, or to withstand a large capacitive load in on‐chip local oscillator distribution, particularly suitable for multi‐band MIMO WLAN radios . The fabricated VCO‐buffer in 65‐nm CMOS measures 13.8% tuning range from 5.64 to 6.4 GHz, consumes 3.6 mW at 1.2 V and exhibits ?108.84 dBc/Hz phase noise at 1‐MHz offset. Copyright © 2013 John Wiley & Sons, Ltd.     

IO circuit design for 2.5D through‐silicon‐interposer interconnects

This paper presents four topologies of voltage‐mode un‐terminated IO cells in 28‐nm CMOS for single‐ended rail‐to‐rail signaling over a passive interposer die in 2.5D configuration for >1Gbps data rates. The presented design explores the existing IO design‐space from a 2.5D viewpoint, optimizing existing topologies from area, speed, power and protection perspectives, with a higher degree of configurability in the form of pre‐emphasis and slew‐rate control. The transmitter (TX) embeds pre‐emphasis to enhance high‐frequency components of the signal for longer low‐pass natured channels. The TX also implements slew‐rate control to minimize reflections on shorter channels because of impedance discontinuities and also to minimize simultaneous switching noise. Level‐shifting capability embedded in the receiver (RX) enables multi‐technology interfacing where different dies are signaling at their core voltages (range: 0.7 V–1.8 V) instead of following a particular signaling standard. The measurement results of the transceivers, over a interposer of length of 3.5 mm, demonstrate ±5% duty‐cycle distortion with 700 μW at 500 MHz/0.8‐V‐signaling on the channel with jitter of 20 ps, ±10% duty‐cycle distortion with 1.8 mW at 1Gbps/0.9‐V signaling with jitter of 20 ps, ±10% duty‐cycle distortion with 2 mW at 2Gbps/0.7‐V signaling for 1‐V receiver core voltage with a jitter of 10 ps. Copyright © 2016 John Wiley & Sons, Ltd.     

A systematic approach to designing a wide‐current range,MOS capacitor‐based switched‐capacitor DC‐DC converter with an augmenting LDO

Switched‐capacitor DC‐DC converters (SC DC‐DC) are analyzed for loss sources, voltage regulation integrity, start‐up latency, and ripple size, while the trade‐offs between these metrics are derived. These analyses are used to design a SC DC‐DC that achieves high efficiency in a wide load current range. Four‐way interleaving was employed to reduce the output ripple and efficiency loss due to this ripple. The design can be reconfigured to achieve gains of 1/3 and 2/5 for inputs ranging between 1.4 and 3.6 V to generate output voltage range of 0.4 to 1.27 V and can supply peak load current of 22 mA. It uses thin‐oxide MOS capacitors for their high density and achieves 75.4% peak efficiency with an input frequency of 100 MHz and a load capacitor of 10 nF. An augmenting LDO that only regulates during sudden load transients helps the converter respond fast to these transients. The chip was implemented using a 65‐nm standard CMOS process.     

A 0.8‐V supply bulk‐driven operational transconductance amplifier and Gm‐C filter in 0.18 µm CMOS process

A low voltage bulk‐driven operational transconductance amplifier (OTA) and its application to implement a tunable Gm‐C filter are presented. The linearity of the proposed OTA is achieved by nonlinear terms cancelation technique, using two paralleled differential topologies with opposite signs in the third‐order harmonic distortion term of the differential output current. The proposed OTA uses 0.8 V supply voltage and consumes 31.2 μW. The proposed OTA shows a total harmonic distortion of better than ?40 dB over the tuning range of the transconductance, by applying 800 mV_ppd sine wave input signal with 1 MHz frequency. The OTA has been used to implement a third‐order low‐pass Gm‐C filter, which can be used for wireless sensor network applications. The filter can operate as the channel select filter and variable gain amplifier, simultaneously. The gain of the filter can be tuned from ?1 to 23 dB, which results in power consumptions of 187.2 to 450.6 μW, respectively. The proposed OTA and filter have been simulated in a 0.18 µm CMOS technology. Simulations of process corners and temperature variations are also included in the paper. Copyright © 2014 John Wiley & Sons, Ltd.     

Using MOS current dividers for linearization of programmable gain amplifiers

Two highly linear, digitally programmable gain amplifiers are presented and compared in terms of linearity, frequency, area and power consumption. High linearity and wide gain tuning range with moderate area consumption are the main benefits of both configurations. Furthermore, constant bandwidth is achieved by means of switched compensation capacitor arrays. Three‐bit prototypes were integrated in a 0.35 µm–3.3 V CMOS process with 2.5 V supply voltage. Experimental distortion levels are better than ?68 dB for 1 MHz and 1 V_p?p output signals in both configurations; hence, the suitability of the linearization technique based on MOS current dividers is shown. Copyright © 2007 John Wiley & Sons, Ltd.     

A switch‐utilization‐improved switched‐inductor switched‐capacitor converter with adapting stage number

A novel closed‐loop switched‐inductor switched‐capacitor converter (SISCC) is proposed by using the pulse‐width‐modulation (PWM) compensation for the step‐up DC–DC conversion/regulation, and together by combining the adaptive‐stage‐number (ASN), control for the higher switch utilization and wider supply voltage range. The power part of SISCC is composed of two cascaded sub‐circuits, including (i) a serial‐parallel switched‐capacitor circuit with n_c pumping capacitors and (ii) a switched‐inductor booster with m_c resonant capacitors, so as to obtain the high step‐up gain of (n_c + 1) × m_c /(1 ? D) at most, where D is the duty cycle of PWM adopted to enhance output regulation as well as robustness to source/loading variation. Besides, the ASN control is presented with adapting the stage number n (n = 0, 1, 2, …, n_c) of pumping capacitors to obtain a flexible gain of (n + 1) × m_c /(1 ? D), and further in order to make the SISCC operating at a properly small duty cycle for improving switch utilization and/or supply voltage range. Some theoretical analysis and control design include formulation, steady‐state analysis, ASN‐based conversion ratio, efficiency, output ripple, stability, inductance and capacitance selection, and control design. Finally, the performance of this scheme is verified experimentally on an ASN‐based SISCC prototype, and all results are illustrated to show the efficacy of this scheme. Copyright © 2015 John Wiley & Sons, Ltd.     

A high step‐up half‐bridge DC/DC converter with a special coupled inductor for input current ripple cancelation and extended voltage doubler circuit for power conditioning of fuel cell systems

This paper presents a high step‐up soft switched dc–dc converter having the feature of current ripple cancelation in the input stage that is specialized for power conditioning of fuel cell systems. The converter comprises a special half‐bridge converter and a rectifier stage based upon the voltage‐doubler circuit, in which the coupled‐inductor technology is amalgamated with switched‐capacitor circuit. The input current with no ripple is the principal characteristics of this topology that is achieved by utilizing a small coupled inductor. In addition, the low clamped voltage stress across both power switches and output diodes is another advantage of the proposed converter, which allows employing the metal–oxide–semiconductor field‐effect transistors with minuscule on‐state resistance and diodes with lower forward voltage‐drop, and thereby, the semiconductors' conduction losses diminish considerably. The inherent nature of this topology handles the switching scheme based on the asymmetrical pulse width modulation in order for switches to establish the zero voltage switching, leading to lower switching losses. Besides, because of the absence of the reverse‐recovery phenomenon, all diodes turn off with zero current switching. At last, a 250‐W laboratory prototype with the input voltage 24 V and output voltage 380 V is implemented to verify the especial features of the proposed converter. Copyright © 2015 John Wiley & Sons, Ltd. Copyright © 2015 John Wiley & Sons, Ltd.     

A low‐power,area‐efficient multichannel receiver for micro MRI

A new integrated, low‐noise, low‐power, and area‐efficient multichannel receiver for magnetic resonance imaging (MRI) is described. The proposed receiver presents an alternative technique to overcome the use of multiple receiver front‐ends in parallel MRI. The receiver consists of three main stages: low‐noise pre‐amplifier, quadrature down‐converter, and a band pass filter (BPF). These components are used to receive the nuclear magnetic resonance signals from a 3 × 3 array of micro coils. These signals are combined using frequency domain multiplexing (FDM) method in the pre‐amplifier and BPF stages, then amplified and filtered to remove any out‐of‐band noise before providing it to an analog‐to‐digital converter at the low intermediate frequency stage. The receiver is designed using a 90 nm CMOS technology to operate at the main B₀ magnetic field of 9.4 T, which corresponds to 400 MHz. The receiver has an input referred noise voltage of 1.1 nV/√Hz, a total voltage gain of 87 dB, a power consumption of 69 mA from a 1 V supply voltage, and an area of 305 µm × 530 µm including the reference current and bias voltage circuits. Copyright © 2013 John Wiley & Sons, Ltd.     

Design and analysis of power‐CMOS‐gate‐based switched‐capacitor DC–DC converter with step‐down and step‐up modes

A unified multi‐stage power‐CMOS‐transmission‐gate‐based quasi‐switched‐capacitor (QSC) DC–DC converter is proposed to integrate both step‐down and step‐up modes all in one circuit configuration for low‐power applications. In this paper, by using power‐CMOS‐transmission‐gate as a bi‐directional switch, the various topologies for step‐down and step‐up modes can be integrated in the same circuit configuration, and the configuration does not require any inductive elements, so the IC fabrication is promising for realization. In addition, both large‐signal state‐space equation and small‐signal transfer function are derived by state‐space averaging technique, and expressed all in one unified formulation for both modes. Based on the unified model, it is all presented for control design and theoretical analysis, including steady‐state output and power, power efficiency, maximum voltage conversion ratio, maximum power efficiency, maximum output power, output voltage ripple percentage, capacitance selection, closed‐loop control and stability, etc. Finally, a multi‐stage QSC DC–DC converter with step‐down and step‐up modes is made in circuit layout by PSPICE tool, and some topics are discussed, including (1) voltage conversion, output ripple percentage, and power efficiency, (2) output robustness against source noises and (3) regulation capability of converter with loading variation. The simulated results are illustrated to show the efficacy of the unified configuration proposed. Copyright © 2003 John Wiley & Sons, Ltd.     

A 6th‐order 75 dB‐DR 10.7 MHz 3.3 V CMOS bandpass ΣΔ modulator sampled at 37.05 MHz

This paper describes the design and the implementation of a 6th‐order bandpass ΣΔ modulator to be used for IF digitizing at 10.7 MHz of a broadcasting FM radio signal. The modulator is sampled at 37.05 MHz. This sampling frequency value allows to optimize both modulator and overall receiver channel performance. The modulator has been implemented in a standard double‐poly 0.35 µm CMOS technology using switched capacitor (SC) technique and consumes 116 mW from a single 3.3 V power supply. The modulator features 75 dB dynamic range and 66 dB peak‐SNR within a 200 kHz bandwidth (FM bandwidth). Third‐order intermodulation products are suppressed by –78dBc. Copyright © 2004 John Wiley & Sons, Ltd.     

A 7.5‐μW 0.08‐mm2 single‐ended SC delta‐sigma ADC for acoustic sensor applications

This study presents an ultra‐low‐power, small‐size, 1‐bit, single‐ended, and switched‐capacitor (SC) delta‐sigma analog‐to‐digital converter (ADC) for wireless acoustic sensor nodes. This wireless sensor node has a delta‐sigma ADC that converts the sensed signal to a digital signal for convenient data processing and emphasizes the features of small size and low‐power consumption. The chip area of the delta‐sigma ADC is dominated by the capacitor; therefore, a novel common‐mode (CM) controlling technique with only transistors is proposed. This ADC achieves an extremely small size of 0.08 mm² in a 130‐nm CMOS process. The conventional operational transconductance amplifiers (OTAs) are replaced by inverters in the weak inversion region to achieve high power efficiency. At 4‐MHz sampling frequency and 0.7‐V power supply voltage, the delta‐sigma ADC achieves a 55.8‐dB signal‐to‐noise‐plus‐distortion ratio (SNDR) and a 298‐fJ/step figure‐of‐merit (FOM) in a signal bandwidth of 25 kHz, while consuming only 7.5 μW of power. Copyright © 2015 John Wiley & Sons, Ltd.     

Programmable feedforward linearized CMOS OTA for fully differential continuous‐time filter design

In this paper, a feedforward linearization method for programmable CMOS operational transconductance amplifier (OTA) is described. The proposed circuit technique is developed using simple source‐coupled differential pair transconductors, a feedback‐loop amplifier for self‐adjusting transcoductance (g_m) and a linear reference resistor (R). As a result, an efficient linearization of a transfer characteristic of the OTA is obtained. SPICE simulations show that for 0.35µm AMS CMOS process with a single +3V power supply, total harmonic distortion at 1 V_pp and temperature range from ?30 to +90°C is less than ?49.3 dB in comparison with ?35.8 dB without linearization. Moreover, the input voltage range of linear operation is increased. Power consumption of the linearized OTA circuit is 0.86 mW. Finally, the OTA is used to design a third‐order elliptic low‐pass filter in high‐frequency range. The cut‐off frequency of the operational transconductance amplifier‐capacitor (OTA‐C) filter is tunable in the range of 322.6 kHz–10 MHz using the feedforward linearized OTAs with the digitally programmable current mirrors. Copyright © 2009 John Wiley & Sons, Ltd.     

0.5‐V bulk‐driven differential amplifier

A new 0.5‐V fully differential amplifier is proposed in this article. The structure incorporates a differential bulk‐driven voltage follower with conventional gate‐driven amplification stages. The bulk‐driven voltage follower presents differential gain equal to unity while suppressing the input common‐mode voltage. The amplifier operates at a supply voltage of less than 0.5 V, performing input transconductance almost equal to a gate transconductance and relatively high voltage gain without the need for gain boosting. The circuit was designed and simulated using a standard 0.18‐µm CMOS n‐well process. The low‐frequency gain of the amplifier was 56 dB, the unity gain bandwidth was approximately 3.2 MHz, the spot noise was 100 nV/√Hz at 100 kHz and the current consumption was 90 μΑ. Copyright © 2012 John Wiley & Sons, Ltd.     

A 1.2 V 83 dB DR single‐ended input SC ΔΣ modulator including a large‐swing analog buffer for portable ECG applications

This study proposes a subsystem consisting of an analog buffer and a single‐ended input to a fully differential ΔΣ modulator to obtain low‐power consumption for portable electrocardiogram applications. With the proposed subsystem, the need for an inverting amplifier is avoided, and low‐power consumption is achieved. The ΔΣ modulator with a second order, 1 bit, and cascade of integrators feedforward structure consumes a low power, in which an inverting and a non‐inverting path implement a single‐ended input to fully‐differential signals. A double sampling technique is proposed for a digital‐to‐analog converter feedback circuit to reduce the effect of the reference voltage, reduce the amplifier requirements, and obtain low‐power consumption. Input‐bias and output‐bias transistors working in the weak‐inversion region are implemented to obtain an extremely large swing for the analog buffer. At a supply voltage of 1.2 V, signal bandwidth of 250 Hz, and sampling frequency of 128 kHz, the measurement results show that the modulator with a buffer achieves a 77 dB peak signal‐to‐noise‐distortion ratio, an effective‐number‐of‐bits of 12.5 bits, an 83 dB dynamic range, and a figure‐of‐merit of 156 dB. The total chip size is approximately 0.28 mm² with a standard 0.13 µm Complementary Metal‐Oxide‐Silicon (CMOS) process. Copyright © 2016 John Wiley & Sons, Ltd.     

A common‐gate common‐source low noise amplifier based RF front end with selective input impedance matching for blocker‐resilient receivers

This paper presents an integrated wideband radio frequency front end with improved blocker resilience achieved through selective voltage attenuation at both input and output nodes of the low noise amplifier (LNA). The architecture differs from traditional LNA architectures where blockers are only attenuated at LNA output node. The proposed dual attenuation is attained by designing a low intrinsic input impedance common‐gate common‐source LNA with capacitive feedback, together with an N‐path filtering load. The capacitive feedback across the LNA ensures that the selective N‐path filtering profile at the LNA output is transferred to the LNA input nodes creating a selective input impedance. Consequently, the achieved front‐end input impedance is low at blocker frequencies and matched to the source impedance at the desired frequencies, creating the desired voltage attenuation for blockers. Further, a detailed theoretical analysis of proposed architecture is presented, which leads to clear design guidelines. Evaluated in a 28‐nm fully depleted silicon‐on‐insulator complementary metal oxide semiconductor (CMOS) process, front end is designed for wideband operation from 0.7 to 2.7 GHz. It consumes 11‐mA current from a 1‐V supply (excluding local oscillator (LO) buffering) and possesses a maximum noise figure of 5.1 dB. The front end demonstrates an out‐of‐band blocker compression point of ?1.5 dBm and out‐of‐band IIP3 of +14 dBm at a 100‐MHz offset from LO frequency. In comparison with a traditional common‐gate common‐source LNA‐based front end with wideband input impedance matching, the proposed front end achieves 3.5‐dB improvement in the blocker compression point at a 100‐MHz offset from LO.     

A 13 bit 10 MHz bandwidth MASH 3–2 Σ∆ modulator in 90 nm CMOS

In this paper, a new multi loop sigma‐delta (ΣΔ) modulator is proposed which employs one order redundant noise shaping in the first stage so the effect of the quantization noise leakage is minimized. Thus, analog circuit requirements are considerably relaxed compared to the conventional Multi‐stAge‐noise‐SHaping (MASH) structures. This enhancement makes the structure appropriate for low voltage and broadband applications. The proposed architecture is compared with traditional high‐order structures, and the advantages are demonstrated by both the analysis and behavioral system level simulations. As a prototype, the proposed MASH 3–2 sigma‐delta modulator is designed, and the detailed design procedure is presented from the system level to the circuit level in a 90 nm CMOS technology. Circuit level simulation results show that the modulator achieves a peak signal‐to‐noise and distortion ratio of 79.4 dB and 79 dB dynamic range over a 10 MHz bandwidth with a sampling frequency of 160 MHz. It consumes 35.4 mW power from a single 1 V supply. Copyright © 2012 John Wiley & Sons, Ltd.     

A single‐bit continuous‐time delta‐sigma modulator using clock‐jitter and inter‐symbol‐interference suppression technique

This paper presents a technique for mitigating two well‐known DAC non‐idealities in continuous‐time delta‐sigma modulators (CTDSMs), particularly in wide‐band and low over‐sampling‐ratio (OSR) cases. This technique employs a special digital‐to‐analog convertor (DAC) waveform, called modified return‐to‐zero (MRZ), to reduce the time uncertainty effect because of the jittered clock at the sampling time instances and eliminate the effect of inter‐symbol‐interference (ISI) which degrades the modulator performance, especially when non‐return‐to‐zero (NRZ) DAC waveform is chosen in the modulator design. A third‐order single‐bit CTDSM is designed based on the proposed technique and step‐by‐step design procedure at circuit and system levels, considering clock jitter and ISI, is explained. Circuit simulations in 180‐nm CMOS technology show that in the presence of circuit non‐idealities which generate jitter and asymmetrical rise and fall times in the DAC current pulse, signal‐to‐noise‐distortion‐ratio (SNDR) of the proposed modulator is higher than the conventional modulator with NRZ waveform by about 10 dB. In these simulations, clock jitter standard deviation is 0.3% of the sampling period (T_S) and the difference between fall/rise times in the DAC current pulse is 4%T_S. Simulated at 600‐MHz sampling frequency (f_S) with an oversampling ratio (OSR) of 24, SNDR figure of merit (FOM_SNDR) of the proposed modulator in 180‐nm CMOS is 300 fj/conversion. Copyright © 2016 John Wiley & Sons, Ltd.