轴向预负载对细薄钢管激光弯曲机制的影响

应用ABAQUS有限元仿真软件,对连续波CO_2激光照射细薄金属管材产生的弯曲过程进行数值仿真。将实验中测量的弯曲过程中各变量与数值仿真的结果进行了比较。分析在不同预负荷时弯曲过程中温度、应力、残余应力的分布和弯曲角度对于变形机制的影响。     

轴向预负荷对激光弯曲钢管的影响

为了研究细薄金属管材激光弯曲成型过程中轴向预载荷力的影响作用规律,应用ABAQUS有限元仿真软件,对连续波CO2激光照射细薄钢管产生的弯曲过程进行了数值仿真.实验中对弯曲过程中各变量进行了测量,并与数值仿真的结果进行了比较.得到了预负荷对于弯曲变形机制中,温度、应力、残余应力的分布和弯曲角度的作用规律.实验结果表明,在激光功率和扫描速度相同时,轴向预负荷能够明显地增大弯曲过程中的内应力和弯曲角度.     

轴向预负载对细薄钢管激光弯曲机制的影响

应用ABAQUS有限元仿真软件，针对连续波（CW）CO2激光照射细薄金属管材过程，建立了弯曲过程的热能和机械模型，进而对弯曲过程中的温度、应力、残余应力的分布和弯曲角度进行了数值仿真，研究了各参数对变形机制的影响。设计了与仿真对应的激光照射管材弯曲实验，将实验数据和仿真数据进行比较，结果表明了该弯曲模型的有效性，并分析了仿真和实验数据产生差异的原因。     

MEMS微波功率传感器的悬臂梁弯曲模型研究北大核心

为了研究电容式MEMS微波功率传感器悬臂梁的非线性运动，建立了MEMS悬臂梁在空间域上的弯曲特性模型，综合考虑静电力、轴向应力以及残余应力对悬臂梁非线性运动的影响，求解得到动力学微分方程。在此基础上研究在不同杨氏模量、驱动电压和残余应力下悬臂梁的弯曲特性，解析得到对应的悬臂梁弯曲特性曲线与轴向应力曲线。使用有限元分析软件ANSYS对不同驱动电压下的悬臂梁下拉位移进行仿真，并对仿真结果与解析结果进行比较。结果表明，在驱动电压从10 V到20 V的变化过程中，仿真结果与模型解析结果具有一致的趋势，两者间的最大误差仅有8.81%。对电容式MEMS微波功率传感器的悬臂梁弯曲特性的研究具有一定的参考价值和指导意义。     

基于ANSYS液晶玻璃基板的应力分析

为了管控紫外光固化工艺过程掩膜版的裂纹,基于ANSYS对受石英棒吸附的液晶玻璃基板的结构应力及升降温过程的热应力进行仿真分析,讨论了不同材料和不同厚度玻璃基板的结构应力及热应力变化。结构应力分析结果表明,基板挠度、等效应力和弯曲应力最大值均出现在中部;基板厚度增加时,最大应力值显著减小。热应力分析结果表明,当玻璃基板存在温度梯度时,升温较大的区域,玻璃基板挠度更大;随着温度先增大后减小,玻璃基板挠度、等效应力与弯曲应力均先增大后减小,且升降温过程中基板应力变化显著,等效应力变化最大,弯曲压应力变化较小,弯曲拉应力变化最小。玻璃基板等效应力和弯曲拉应力最大值分别达到44.8 MPa和5.79 MPa。优化设备降温系统,降低玻璃基板各区域的温度梯度与基板升温值等可有效防止玻璃破裂的发生。     

激光重熔路径对再制造涂层残余应力及表面质量的影响

为进一步提高再制造合金层表面质量，提升其综合力学性能，通过数值模拟与试验相结合的方式，研究激光重熔路径对熔覆层残余应力及表面质量的影响机理。首先，基于Simufact Welding软件平台分别建立了激光熔覆及三种不同扫描路径下的重熔模型，仿真研究重熔过程温度场及应力场变化规律。然后，进行了激光重熔工艺试验，通过X射线残余应力检测仪、基恩士超景深显微镜对再制造合金层的残余应力及表面形貌进行检测分析。仿真结果表明，重熔过程中工件表面各点的温度梯度比熔覆过程有明显的降低，重熔前工件最大残余应力为269.59 MPa，经激光重熔后，工件的残余应力得到明显的降低，且L1型重熔路径下工件的残余应力值最小，仅为重熔前应力值的1/2左右。残余应力试验结果与仿真计算数值偏差在10%以内，证明了仿真计算的准确性。通过对合金层的表面形貌进行三维提取发现，激光重熔能有效降低熔覆层表面粗糙度。     

激光弯曲成形温度场的有限元数值模拟

激光成形技术是以激光为热源加热金属板料,依靠内应力使板料弯曲成形。研究激光成形过程中弯曲角与各影响参数之间的关系,了解板料内部温度场的分布规律是尤为重要的。本文应用有限元方法对不同热源形式、激光参数、板料尺寸及冷却条件下的三维瞬态温度场进行了数值模拟,分析了各因素对激光成形温度场的影响特性,为进一步的应力应变分析打下基础。     

钢管激光弯曲成形的数值模拟

为了研究钢管激光弯曲过程,采用数值模拟的方法研究了激光弯曲钢管的温度场以及应力应变场的变化特点,分析了激光弯曲钢管的动态过程,解释了激光弯曲钢管过程中沿钢管壁厚各点的弹塑性变形的规律.结果表明,在给定技术参数下,激光扫描处横截面沿壁厚方向均产生压缩塑性变形,且下表面的压缩塑性应变比上表面要大,并解释了其机理.同时研究了激光工艺参数对弯曲成形角的影响,随着激光功率或激光扫描角度的增加,弯曲角度增加.     

用双玻璃片剪切干涉仪测量弯曲平板的倾斜和弯曲

在平面变形和应力测量中,需要测定位移倾斜和弯曲等物理最。弯曲平板的曲率测量尤为重要,因为在薄板小弯曲理论中,应力与曲率直接有关。已经研究了多种测定曲率的方法。数值微分法须对离面位移数据进行两次微分,误差较大;重叠错位等倾斜纹图,过程繁复;多次曝光法可记录全场干涉图样,但往往是等倾斜条纹和等曲率条纹的混合条纹图样,对比度比较低。本文介绍一种一次曝光就可记录等倾斜条纹图样或等曲率条纹图样的光学方法,光路简单,条纹图样清晰。     

金属板料激光喷丸成形理论研究与数值模拟

在对激光喷丸成形(LPF)机制分析的基础上,采用ABAQUS软件对激光喷丸成形过程进行了有限元数值模拟,分析了激光喷丸后板料的变形和残余应力场的分布情况。结果表明激光喷丸在板料表层的塑性变形层中诱导出压应力,在塑性变形层以下部位出现拉应力,这种应力分布形式打破了板料内部原有力系的平衡,促使板料发生弯曲变形,从而使板料内部应力重新分布以达到新的平衡,最终在板料厚度方向形成上下两面为压应力,而中部为拉应力的新的残余应力场。研究结果对理解激光喷丸成形过程及其本质,进行激光喷丸工艺参数的合理优化、板料变形过程的有效控制和进一步的实验研究具有指导意义。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.