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作为碲锌镉衬底表面加工的重要工序,化学机械抛光(Chemical Mechanical Polishing, CMP)的加工效果决定了碲锌镉衬底的表面质量和生产效率。抛光液是CMP的关键影响因素之一,直接影响衬底抛光后的表面质量。对碲锌镉衬底CMP工艺使用的抛光液进行了研究,探究了以二氧化硅溶胶和过氧化氢为主体的抛光液体系在不同pH值、不同磨料浓度下对衬底抛光表面质量和去除速率的影响。结果表明,使用改进后的抛光液体系对碲锌镉衬底进行CMP,能够在获得超光滑表面的同时实现高效率加工,为批量化制备高表面质量的碲锌镉衬底奠定了良好基础。 相似文献
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《电子元件与材料》2017,(1):57-61
采用直流溅射法成功制备出了SnO_2纳米颗粒,分析了SnO_2纳米颗粒的形成机理,研究了不同溅射时间、不同衬底材质对SnO_2纳米颗粒形成的影响规律。结果表明,溅射时间对SnO_2纳米颗粒的尺寸有显著影响。随溅射时间延长,颗粒尺寸呈线性增长,从约20 nm(1 min)增长到约80 nm(10 min)。衬底材质则对SnO_2纳米颗粒的形态及分布有显著影响。对比单晶硅、载玻片、喷金载玻片三种不同衬底材质,发现以单晶硅为衬底的纳米颗粒分布均匀,而以载玻片为衬底的纳米颗粒分布不均,并且随溅射时间延长,以载玻片为衬底的纳米颗粒发生团聚生长,颗粒粗大。载玻片衬底喷金处理后可使纳米颗粒的形貌及分布得到改善。 相似文献
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分析了各向异性衬底上的高温超导微带天线特性.选取两种典型的高温超导各向异性介质--GaNdAlO3和SrLaAlO4作为高温超导微带天线的衬底,采用各向异性媒质中的谱域矩量法,对微带天线的输入阻抗和辐射效率进行了计算.计算和分析结果表明,高温超导衬底的各向异性特性会影响高温超导微带天线的性能,而且这种影响因衬底而异,同时,衬底特性随温度的变化也将影响天线的性能. 相似文献
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利用Silvaco-TCAD半导体器件仿真软件对n型插指背接触(IBC)晶硅太阳电池衬底参数进行了优化,全面系统地分析了晶硅衬底厚度、电阻率、少子寿命对IBC太阳电池量子效率、短路电流、开路电压、转换效率的影响.结果表明:晶硅衬底少子寿命是影响IBC太阳电池性能的最主要因素.少子寿命越高,电池转换效率越高.当晶硅衬底电阻率为2Ω·cm,少子寿命为500 μs时,最优的衬底厚度范围为60~65μm,IBC太阳电池转换效率约为22.5%.利用高质量晶硅材料制备IBC太阳电池时,可降低对衬底厚度的要求.当晶硅衬底厚度为150 μm、少子寿命为500μs时,最优衬底电阻率为0.3 Ω·cm,IBC太阳电池转换效率约为23.3%.少子寿命越低,IBC太阳电池最优的衬底电阻率越大. 相似文献
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研究了pMOSFET中栅控产生电流(GD)的衬底偏压特性。衬底施加负偏压后,GD电流峰值变小;衬底加正向偏压后,GD电流峰值增大。这归因于衬底偏压VB调制了MOSFET的栅控产生电流中最大产生率,并求出了衬底偏压作用系数为0.3。考虑VB对漏PN结的作用,建立了包含衬底偏压的产生电流模型。基于该模型的深入分析,很好地解释了衬底负偏压比衬底正偏压对产生电流的影响大的实验结果。 相似文献
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在通信和航天技术的各个领域里越来越多地使用微波集成电路。衬底对微波集成电路的性能有极大的影响。因此。首先必须看到衬底性能好坏决定微波集成电路的优质。然后,从微波集成电路质量的角度提出对衬底的要求。本文叙述了对衬底的机械、温度和电性能等方面的要求,由于陶瓷作衬底材料具有重要意义,文章还着重介绍了陶瓷的制造方法。最后阐述了发展趋势。 相似文献
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本文对影响LTPS工艺中光刻胶和衬底间粘附力的4个因素进行了实验及理论分析。经实验发现:衬底的材质和粗糙度以及光刻胶中分子量的分布是影响光刻胶和衬底粘附力的最重要的两个因素。在改善粘附力方面HMDS对于电负性较强的金属衬底和光刻胶的粘附力有较好的改善效果,对于SiNX、A-Si及P-Si衬底改善效果明显,且无差异,对于ITO没有改善。光刻胶涂布后适当延长烘烤时间也可以有效改善光刻胶和衬底的粘附力。 相似文献
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制备并研究了纳米级图形化蓝宝石衬底.采用磁控溅射技术在蓝宝石衬底上沉积 SiO2薄膜,利用自组装方法在SiO2薄膜上制备单层聚苯乙烯(PS)胶体球阵列,利用感应耦合等离子体干法刻蚀将周期性PS胶体球的图形转移到SiO2薄膜上,通过湿法腐蚀制备了纳米级图形化蓝宝石衬底.利用扫描电子显微镜对胶体球掩膜、SiO2纳米柱掩膜和图形化蓝宝石衬底结构进行了观察,研究了湿法腐蚀蓝宝石衬底的中间产物对刻蚀的影响,分析了腐蚀温度和腐蚀时间对蓝宝石衬底的影响.结果表明,湿法腐蚀的中间产物会降低蓝宝石衬底的刻蚀速率.蓝宝石衬底的腐蚀速率随着腐蚀温度的升高而加快;在同一腐蚀温度下,随着腐蚀时间的增加,图形尺寸进一步减小. 相似文献
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In this paper, a technology computer-aided design (TCAD) driven method for accurate prediction of the performance spread of integrated circuits due to process variations is presented. The methodology starts with the development of the nominal process recipe and process simulators are calibrated to an existing process to obtain nominal device characteristics. After determining nominal process parameters, their variations are introduced followed by screening experiments to determine the relative effects of given process variations on the input-output delay and the average power dissipation in a circuit. Response surface models (RSMs) are then generated based on critical process factors identified. Process parameter optimization is performed using these RSM models to tune the mean circuit performance and to improve the yield. This methodology is demonstrated on a 33-stage ring oscillator manufactured with a CMOS design flow. The proposed methodology maps the process domain to design space, and plays a key role in design for manufacturability (DFM) to quantify direct impact of the process variations on circuits. 相似文献
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A nonlinear variational approach to remove impulsive noise in scalar images is proposed. Taking benefit from recent studies on the use of stochastic resonance and the constructive role of noise in nonlinear processes, the process is based on the classical restoration process of Perona-Malik in which a Gaussian noise is purposely injected. It is shown that this new process can outperform the original restoration process of Perona-Malik. 相似文献
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Moran P.W. Elliott S.S. Wylie N. Henderson R.M. del Alamo J.A. 《Semiconductor Manufacturing, IEEE Transactions on》1991,4(4):304-311
A methodology for guiding process-driven manufacturing organizations in instituting process control on a facility-wide basis is proposed. The methodology begins with defining a specific process and the customer's expectations of this process, then increases control over the process through four levels: measurable, predictable, acceptable, and recoverable. An application of this methodology to the control of submicron-gate lithography on a GaAs monolithic microwave integrated circuit (MMIC) process is discussed. Experience suggests that the realization of process control is as much a managerial problem as it is a technical one. This application suggests that the proposed methodology serves as a useful conceptual guideline for operators, engineers, and managers in uniformly applying a wide variety of process control tools 相似文献
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针对现有工作流模型在支持过程定义和过程分析方面缺乏统一规范的缺点,提出了EPC的工作流建模方法.给出了EPC过程链中顺序路由和并行度的定义,建立了基于EPC建模的工作流过程模型,最后通过J2EE平台实现了基于EPC的工作流原型系统,并对电涡流缓速器产品协同设计的工作流建模实例进行了介绍. 相似文献
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A methodology for on-line process control of uniformity is developed based on the division of process variability into two categories: that which can be effectively controlled on-line and that which must be optimized off-line. This categorization is based on the physics of the process and equipment. In the case of axisymmetric single wafer processing, the radial uniformity can be controlled on-line, as a number of process parameters will have a direct influence on the radial uniformity. However, circumferential uniformity is not directly influenced by any process parameters and must be optimized off-line. The choice of process parameters to effect on-line control is designed to decouple the successive stages of optimization and control and is guided by the formulation of appropriate performance metrics. The methodology presented simplifies on-line control and recommends a narrower goal for its implementation, one that can be achieved with minimum risk of inadvertently degrading the performance of the process. The methodology is applied to single wafer plasma oxide and polysilicon etching processes. It is shown that radial uniformity is improved by applying on-line control while minimizing the impact on circumferential uniformity, with the result that overall uniformity within a wafer is improved. The methodology is also successfully applied to effect a step change in the radial profile of etching rate 相似文献