Ultra-high elevated temperature strength of TiB2-based ceramics consolidated by spark plasma sintering

Spark plasma sintering of TiB₂–boron ceramics using commercially available raw powders is reported. The B₄C phase developed during reaction-driven consolidation at 1900 °C. The newly formed grains were located at the grain junctions and the triple point of TiB₂ grains, forming a covalent and stiff skeleton of B₄C. The flexural strength of the TiB₂–10 wt.% boron ceramic composites reached 910 MPa at room temperature and 1105 MPa at 1600 °С. Which is the highest strength reported for non-oxide ceramics at 1600 °C. This was followed by a rapid decrease at 1800 °C to 480–620 MPa, which was confirmed by increased number of cavitated titanium diboride grains observed after flexural strength tests.     

High-strength AlN ceramics by low-temperature sintering with CaZrO3–Y2O3 co-additives

Aluminum nitride (AlN) ceramics with the concurrent addition of CaZrO₃ and Y₂O₃ were sintered at 1450-1700 °C. The degree of densification, microstructure, flexural strength, and thermal conductivity of the resulting ceramics were evaluated with respect to their composition and sintering temperature. Specimens prepared using both additives could be sintered to almost full density at relatively low temperature (3 h at 1550 °C under nitrogen at ambient pressure); grain growth was suppressed by grain-boundary pinning, and high flexural strength over 630 MPa could be obtained. With two-step sintering process, the morphology of second phase was changed from interconnected structure to isolated structure; this two-step process limited grain growth and increased thermal conductivity. The highest thermal conductivity (156 Wm⁻¹ K⁻¹) was achieved by two-step sintering, and the ceramic showed moderate flexural strength (560 MPa).     

Spark plasma sintering and high-temperature strength of B6O–TaB2 ceramics

Tantalum diboride – boron suboxide ceramic composites were densified by spark plasma sintering at 1900 °C. Strength and fracture toughness of these bulk composites at room temperature were 490 MPa and 4 MPa m^1/2, respectively. Flexural strength of B₆O–TaB₂ ceramics increased up to 800 °C and remained unchanged up to 1600 °C. At 1800 °C a rapid decrease in strength down to 300 MPa was observed and was accompanied by change in fracture mechanisms suggestive of decomposition of boron suboxide grains. Fracture toughness of B₆O–TaB₂ composites showed a minimum at 800 °C, suggestive a relaxation of thermal stresses generated from the mismatch in coefficients of thermal expansion.Flexural strength at elevated temperatures for bulk TaB₂ reference sample was also investigated.Results suggest that formation of composite provides additional strengthening/toughening as in all cases flexural strength and fracture toughness of the B₆O–TaB₂ ceramic composite was higher than that reported for B₆O monoliths.     

Pressureless sintering of boron carbide with Cr3C2 as sintering additive

In this study, chromium carbide (Cr₃C₂) was selected as the sintering additive for the densification of boron carbide (B₄C). Cr₃C₂ can react with B₄C and form graphite and CrB₂ in situ, which is considered to be effective for the sintering of B₄C composites. The sintering behavior, microstructure development and mechanical properties of B₄C composites were studied. The density of B₄C composite increased with the increase of Cr₃C₂ content and sintering temperature. The formation of liquid phase could effectively improve the densification of B₄C composites. The abnormal grains began to appear at 2080 °C. The bending strength could reach 440 MPa for the 25 wt% and 30 wt% Cr₃C₂ samples after sintering at 2070 °C.     

Densification and properties of superhard B6O materials with cobalt additions

The search for suitable additives for boron suboxide (B₆O) materials which could improve densification, reduce sintering temperature and tailor the microstructure has been productive. B₆O materials doped with 0–5 vol% cobalt addition were sintered at temperatures up to 1850 °C and pressure of 50 MPa for 20 min. Relationships between the formed phases, microstructures and mechanical properties of the sintered materials were investigated as a function of sintering conditions and added cobalt content. The hardness of the sintered B₆O materials increases with sintering temperature, while the fracture toughness increases with increasing cobalt content and reduces with increasing sintering temperature.     

Pressureless sintering of titanium carbide doped with boron or boron carbide

Titanium carbide ceramics with different contents of boron or B₄C were pressureless sintered at temperatures from 2100 °C to 2300 °C. Due to the removal of oxide impurities, the onset temperature for TiC grain growth was lowered to 2100 °C and near fully dense (>98%) TiC ceramics were obtained at 2200 °C. TiB₂ platelets and graphite flakes were formed during sintering process. They retard TiC grains from fast growth and reduced the entrapped pores in TiC grains. Therefore, TiC doped with boron or B₄C could achieve higher relative density (>99.5%) than pure TiC (96.67%) at 2300 °C. Mechanical properties including Vickers’ hardness, fracture toughness and flexural strength were investigated. Highest fracture toughness (4.79 ± 0.50 MPa m^1/2) and flexural strength (552.6 ± 23.1 MPa) have been obtained when TiC mixed with B₄C by the mass ratio of 100:5.11. The main toughening mechanisms include crack deflection and pull-out of TiB₂ platelets.     

Microstructure and mechanical properties of hot-pressed B4C/TiC/Mo ceramic composites

Boron carbide (B₄C)/TiC/Mo ceramic composites with different content of TiC were produced by hot pressing. The effect of TiC content on the microstructure and mechanical properties of the composites has been studied. Results showed that chemical reaction took place for this system during hot pressing sintering, and resulted in a B₄C/TiB₂/Mo composite with high density and improved mechanical properties compared to monolithic B₄C ceramic. Densification rates of the B₄C/TiC/Mo composites were found to be affected by additions of TiC. Increasing TiC content led to increase in the densification rates of the composites. The sintering temperature was lowered from 2150 °C for monolithic B₄C to 1950 °C for the B₄C/TiC/Mo composites. The fracture toughness, flexural strength, and hardness of the composites increased with increasing TiC content up to 10 wt.%. The maximum values of fracture toughness, flexural strength, and hardness are 4.3 MPa m^1/2, 695 MPa, and 25.0 GPa, respectively.     

Microstructure and mechanical properties of B4C based ceramics with Fe3Al as sintering aid by spark plasma sintering

B₄C based ceramics were fabricated with different Fe₃Al contents as sintering aids by spark plasma sintering at relatively low temperature (1700 °C) in vacuum by applying 50 MPa pressure and held at 1700 °C for 5 min. The effect of Fe₃Al additions (from 0 to 9 wt%) on the microstructure and mechanical properties of B₄C has been studied. The composition and microstructure of as-prepared samples were characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and electron probe microanalyzer (EPMA) equipped with WDS (wavelength dispersive spectrometry) and EDS. The mixtures of B₄C and Fe₃Al underwent a major reaction in which the metal borides and B₄C were encountered as major crystallographic phases. The sample with 7 wt% of Fe₃Al as a sintering aid was found to have 32.46 GPa Vickers hardness, 483.40 MPa flexural strength, and 4.1 MPa m^1/2 fracture toughness which is higher than that of pure B₄C.     

Sintering,microstructure and electricity properties of ITO targets with Bi2O3–Nb2O5 addition

High density and low electrical resistivity ITO targets were prepared by normal pressure sintering in oxygen with Bi₂O₃–Nb₂O₅ addition. The relative density, microstructure and electrical properties of the ITO targets can be adjusted by changing the sintering temperature (1350 °C~1550 °C) and the content of Bi₂O₃–Nb₂O₅. The results show that the sintering temperature of ITO targets with Bi₂O₃–Nb₂O₅ decreased from 1550 °C to 1450 °C, and the maximum relative density (99.6%) and the lowest electrical resistivity (1.78×10⁻⁴ Ω cm) were reached when the sintering temperature was 1450 °C with 5 wt% Bi₂O₃–Nb₂O₅. The carrier concentration increased as the increase of the contents of Bi₂O₃–Nb₂O₅ and sintering temperature. The mobility first increased, and then decreased above 1450 °C as the sintering temperature increased.     

Effect of carbon content on electrical,thermal, and mechanical properties of porous SiC ceramics with B4C and C additives

The electrical, thermal, and mechanical properties of porous SiC ceramics with B₄C-C additives were investigated as functions of C content and sintering temperature. The electrical resistivity of porous SiC ceramics decreased with increases in C content and sintering temperature. A minimal electrical resistivity of 4.6 × 10^?2 Ω·cm was obtained in porous SiC ceramics with 1 wt% B₄C and 10 wt% C. The thermal conductivity and flexural strength increased with increasing sintering temperature and showed maxima at 4 wt% C addition when sintered at 2000 °C and 2100 °C. The thermal conductivity and flexural strength of porous SiC ceramics can be tuned independently from the porosity by controlling C content and sintering temperature. Typical electrical resistivity, thermal conductivity, and flexural strength of porous SiC ceramics with 1 wt% B₄C-4 wt% C sintered at 2100 °C were 1.3 × 10^?1 Ω·cm, 76.0 W/(m·K), and 110.3 MPa, respectively.     

Hard polycrystalline eutectic composite prepared by spark plasma sintering

A polycrystalline eutectic B₄C–TiB₂ composite was prepared by spark plasma sintering. The starting eutectic powder was obtained by mechanical grinding of the directionally solidified eutectic B₄C–TiB₂ alloy. The microstructure of the polycrystalline composite exhibited randomly oriented eutectic grains with an average size of about 50–100 μm. Eutectic grains consisted of boron carbide matrix reinforced by titanium diboride inclusions. The secondary eutectic structure in the grain boundary is formed at sintering temperature higher than 1700 °C. XRD analysis revealed that the eutectic B₄C–TiB₂ composite consist mainly of B₄C and TiB₂ phases. The measured Vickers hardness was in the range of 32.35–54.18 GPa and the average fracture toughness of the samples was as high as 4.81 MPa m^1/2. The bending strengths of the composite evaluated at room temperature and at 1600 °C were 230 and 190 MPa, respectively.     

Microstructure and properties of ZrB2–SiC composites prepared by spark plasma sintering using TaSi2 as sintering additive

ZrB₂–SiC composites were fabricated by spark plasma sintering (SPS) using TaSi₂ as sintering additive. The volume content of SiC was in a range of 10–30% and that of TaSi₂ was 10–20% in the initial compositions. The composites could be densified at 1600 °C and the core–shell structure with the core being ZrB₂ and the shell containing both Ta and Zr as (Zr,Ta)B₂ appeared in the samples. When the sintering temperature was increased up to 1800 °C, only (Zr,Ta)B₂ and SiC phases could be detected in the samples and the core–shell structure disappeared. Generally, the composites with core–shell structure and fine-grained microstructure showed the higher electrical conductivity and Vickers hardness. The completely solid soluted composites with coarse-grained microstructure had the higher thermal conductivity and Young's modulus.     

Pressureless sintering of beta silicon carbide nanoparticles

This study reports the pressureless sintering of cubic phase silicon carbide nanoparticles (β-SiC). Green blended compounds made of SiC nano-sized powder, a fugitive binder and a sintering agent (boron carbide, B₄C), have been prepared. The binder is removed at low temperature (e.g. 800 °C) and the pressureless sintering studied between 1900 and 2100 °C. The nearly theoretical density (98% relative density) was obtained after 30 min at 2100 °C.The structural and microstructural evolutions during the heat treatment were characterised. The high temperatures needed for the sintering result in the β-SiC to α-SiC transformation which is revealed by the change of the composite microstructure. From 1900 °C, dense samples are composed of β-SiC grains surrounding α-SiC platelets in a well-defined orientation.TEM investigations and calculation of the activation energy of the sintering provided insight to the densification mechanism.     

Pressureless densification and mechanical properties of hafnium diboride doped with B4C: From solid state sintering to liquid phase sintering

A pressureless sintering process, using a small amount of boron carbide (≤2 wt%) as sintering aid, was developed for the densification of hafnium diboride. Hafnium diboride ceramics with high relative density were obtained when the sintering temperature changed from 2100 °C to 2350 °C. However, the sintering mechanism was varied from solid state sintering (SSS, below 2300 °C) to liquid phase sintering (LPS, above 2300 °C). Boron carbide addition improved densification by removing the oxide impurities during solid state sintering and by forming a liquid phase which was well wetting hafnium diboride grains during liquid phase sintering process. The different roles of B₄C on the microstructure development and mechanical properties of the sintered ceramics were investigated.     

Properties of Si3N4–TiN composites fabricated by spark plasma sintering by using a mixture of Si3N4 and Ti powders

Si₃N₄–TiN composites were successfully fabricated via planetary ball milling of 70 mass% Si₃N₄ and 30 mass% Ti powders, followed by spark plasma sintering (SPS) at 1250–1350 °C. The sintering mechanism for SPS was a hybrid of dissolution–reprecipitation and viscous flow. The electrical resistivity decreased with increasing sintering temperature up to a minimum at 1250 °C and then increased with the increasing sintering temperature. The composites prepared by SPS at 1250–1350 °C could be easily machined by electrical discharge machining. Composite prepared by SPS at 1300 °C showed a high hardness (17.78 GPa) and a good machinability.     

Microstructural characterization of spark plasma sintered boron carbide ceramics

Fully dense boron carbide specimens were fabricated by the spark plasma sintering (SPS) technology in the absence of any sintering additives. Densification starts at 1500 °C and the highest densification rate is reached at about 1900 °C. The microstructure of the ceramic sintered at 2200 °C, with heating rates in the 50–400 °C/min range, displays abnormal grain growth, while for a 600 °C/min heating rate a homogeneous distribution of finely equiaxed grains with 4.05 ± 1.62 μm average size was obtained. TEM analysis revealed the presence of W-based amorphous and of crystalline boron-rich B₅₀N₂ secondary phases at triple-junctions. No grain-boundary films were detected by HRTEM. The formation of a transient liquid alumino-silicate phase stands apparently behind the early stage of densification.     

Microstructure and electrical properties of ZnO–Bi2O3-based varistor ceramics by different sintering processes

The effect of sintering processes, such as open sintering, sintering inside a closed crucible, and sintering within a powder bed, on the microstructure and V–I characteristics of ZnO–Bi₂O₃-based varistor ceramics was investigated at sintering temperatures in the range 1000–1200 °C. The results from the experiments showed that the microstructure and electrical properties of the samples varied according to the sintering method and temperature. Optimal values for the electrical characteristics of the varistor ceramics by different sintering processes were obtained when the sintering was conducted at 1100 °C. At the same sintering temperature, the different processes affected the properties differently. At 1000 °C, the samples sintered within a powdered bed showed better electrical properties than those subjected to the other two processes, while at 1100 or 1200 °C, the samples sintered in an open crucible exhibited the best electrical properties.     

Influence of sintering aids and excess Lithium on the conductivity of perovskite-type Li3/8Sr7/16Zr1/4Nb3/4O3 solid electrolyte

Perovskite-structured Li_3/8Sr_7/16Zr_1/4Nb_3/4O₃ solid-state Lithium-conductors were prepared by conventional solid-state reaction method. Influence of sintering aids (Al₂O₃, B₂O₃) and excess Lithium on structure and electrical properties of Li_3/8Sr_7/16Zr_1/4Nb_3/4O₃ (LSNZ) has been investigated. Their crystal structure and microstructure were characterized by X-ray diffraction analysis and scanning electron microscope, respectively. The conductivity and electronic conductivity were evaluated by AC-impedance spectra and potentiostatic polarization experiment. All sintered compounds are cubic perovskite structure. Optimal amount of excess Li₂CO₃ was chosen as 20 wt% because of the total conductivity of LSNZ-20% was as high as 1.6×10⁻⁵ S cm⁻¹ at 30 °C and 1.1×10⁻⁴ S cm⁻¹ at 100 °C, respectively. Electronic conductivity of LSNZ-20% is 2.93×10⁻⁸ S cm⁻¹, nearly 3 orders of magnitude lower than ionic conductivity. The density of solid electrolytes appears to be increased by the addition of sintering aids. The addition of B₂O₃ leads to a considerable increase of the total conductivity and the enhancement of conductivity is attributed to the decrease of grain-boundary resistance. Among these compounds, LSNZ-1 wt%B₂O₃ has lower activation energy of 0.34 eV and the highest conductivity of 1.98×10⁻⁵ S cm⁻¹ at 30 °C.     

Bulk boron carbide nanostructured ceramics by reactive spark plasma sintering

Bulk boron carbide (B₄C) ceramics was fabricated from a boron and carbon mixture by use of one-step reactive spark plasma sintering (RSPS). It was also demonstrated that preliminary high-energy ball milling (HEBM) of the B+C powder mixture leads to the formation of B/C composite particles with enhanced reactivity. Using these reactive composites in RSPS permits tuning of synthesized B₄C ceramic microstructure. Optimization of HEBM + RSPS conditions allows rapid (less than 30 min of SPS) fabrication of B₄C ceramics with porosity less than 2%, hardness of ~35 GPa and fracture toughness of ~ 4.5 MPa m ^1/2     

Correlation between microstructure and electrical resistivity of hexagonal boron nitride ceramics

Hexagonal boron nitride is a material with a unique combination of mechanical, chemical and electrical properties and therefore of considerable technical and commercial interest. Nevertheless, there exists only very limited knowledge concerning the microstructure and electrical properties of such materials. In this work different materials produced by SPS from ‘turbostratic’ and well-crystallised powders are compared with commercial materials in terms of densification, microstructure and electrical properties. The turbostratic powders could be densified at temperatures as low as 1500–1600 °C, but recrystallisation of the grains took place at much higher temperatures (1800–1900 °C). The electrical resistivity of the investigated materials reached values of up to 10¹⁵ Ω cm and strongly depended on the microstructure. The main factor influencing the resistivity was the amount and nature of the grain boundary phase.