俄罗斯科学家发明使用微生物净化受石油污染土壤的新方法

俄罗斯彼尔姆国立科技大学的科研人员发明了借助红球菌属细菌净化受石油污染土壤的新方法。在彼尔姆州，由于大量开采石油，部分地区土壤受污染程度非常严重，地下水系也受到了严重威胁。科学家们经多年研究，发现了红球菌属细菌（Rhodococcus）对所有类型的石油碳氢化合物（从气态到固态）具有非常好的降解作用，它们甚至可以将粘稠的重油分解成具有表面活性的物质。     

印制电路板的清洗技术(二)

清洗印制电路板的传统方法是用有机溶剂清洗，由CFC-113与少量乙醇(或异丙醇)组成的混合有机溶剂对松香助焊剂的残留物有很好的清洗能力，这种有机溶剂对极性污垢和非极性污垢都有很好的溶解能力，但由于CFC-113对大气臭氧层有破坏作用，目前已被禁止使用，目前可选用     

光纤化学传感器监测石油污染

地表主要污染源之一为石油产品的存贮及配送设施。汽油、柴油、煤油及飞机燃料等均存贮在地面或地下油罐中，全世界这类油罐数以百万计而且大多数都使用了数十年，有可能产生泄漏。这种泄漏常常是缓慢的，大多数常规手段无法立即探查到。例如地面油罐的液面测量就没有效果，因为缓慢泄漏造成的变化与整个油罐容积相比微不足道，难以察觉。但是长期缓慢泄漏污染了地下及油罐周围的土壤，甚至使土壤饱和并污染了地下水。许多地区都已报道过大型油罐场下面的地下水面漂浮着数英尺的石油产品。以往检测水中的碳氢化合物是在现场或实验室对采样进…     

超声去除土壤中石油污染物的效果

土壤被石油污染之后,使得地里的植物不容易生长的很好,在他们之间存在食物的关系,这就会让人类的身体状况受到影响,所以,我们要实施有用的方法去进行治理。目前,根据研究数据统计,通过超声处理的办法来加强石油的污染物把土壤表面的污染物解决吸收,在超声的功率越来越强下,使得黏土的颗粒所吸附的稠油的数量就会减少,尤其是超声空化的作用,能够把土壤中所残存的油族等组分给去掉,其结果很是显著。     

用染料激光系统探测土壤污染

用染料激光系统探测土壤污染一种用於现场探测土壤和地下水中石油碳氢化合物的快速筛选仪器（ＲＯＳＴ）系统（以染料激光为基础的仪器），将可消除钻孔和取样的麻烦，用这种仪器可以通过激光感生荧光法就地探测石油碳氢化合物的污染。在普通取样法中，一般要化几千美元钻...     

现代数字石油矿区的构建与创新

为了更有效的提高储量和产量，同时降低成本，大型石油公司纷纷开始建设数字石油矿区。数字石油矿区对可持续发展有重要的意义，可以最大化地优化资源配置和产业结构，但是当前的数字石油矿区设计，指导性不强，还有很大的缺陷。本文从当前数字石油现状出发，将办公自动化技术和当前流行的虚拟现实技术引入数字石油矿区的设计之中，提出了一种新的数字石油设计的构想。     

石油危机冻醒西方信息社会初露曙光

众所周知，阿拉伯国家与以色列的矛盾由来已久，而美国等西方国家对以色列则情有独钟。阿拉伯人心想：“我武力上打不过你，但我有石油，你让我没好日子过，我也让你过不好。”于是，上个世纪70年代，阿拉伯国家运用石油武器对支持以色列的国家实行石油禁运，削减石油产量，还从西方石油公司手中收回石油定价权。     

低折射率液芯光纤喇曼光谱的实验研究

低折射率液体ＣＣｌ４溶于Ｃ６Ｈ５Ｂｒ，Ｃ６Ｈ６，ＣＳ２等有机溶剂中，充入空心石英光纤，获得了１０２倍以上的喇曼光谱。实验结果表明，有机溶剂浓度既影响ＣＣｌ４某些喇曼光谱线的强度（散射系统），也影响光纤数值孔径的大小。低折射率液体的光纤喇曼光谱存在着一个最佳溶液浓度。本文给出了实验结果，并进行简要讨论     

组合光谱法简化了石油勘探

石油和燃料维持世界正常运转，但它们也严重地污染了土壤和水。激光诱导荧光光谱已成为探测这些污染的可靠工具，尤其对土壤层的现场监测。现在Ｅｒｌａｎｇｅｎ－Ｎｕｒｎｂｅｒｇ大学的研究人员通过引入一个相对简单且有效的定标方法改进了这个过程。来自于亮沙土的背向散射光比来自暗泥土的要强得多，这一直是使用激光诱导荧光进行现场监测的一个颇为重要的问题，因为它使荧光信号产生颇大的改变。一些科学家对这些进行了研究，通过把漫反射率光谱组合进这项技术，研究人员能够弥补不同类型土壤引起的变化，从而简化了定标。激光诱导荧光…     

特色技术创新推进石油通信企业战略转型

石油通信专网是在公众网通信能力严重不足，而油田生产又迫切需要通信服务的历史条件下形成的。30多年来，石油通信专网在石油企业的发展建设中发挥着巨大的作用。近年来，在通信行业和石油企业内部发生的巨大变革，使石油通信企业陷入了前所未有的困境。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.