Structural analysis of a-C:H and a-C:H:Si films under high-pressure and high-temperature by synchrotron X-ray diffraction

Amorphous carbon films have several outstanding tribology characteristics, including high hardness, surface smoothness, and low friction. Under tribological conditions, their surface is generally exposed to high-temperature and pressure. Although the structure of amorphous carbon films is likely changed by high temperature and pressure, there have been no reports on such structural changes of the films. To obtain information about their structural changes, synchrotron X-ray diffraction was used to analyze two kinds of amorphous carbon films, a-C:H and a-C:H:Si, under high-temperature and high-hydrostatic pressure conditions. Synchrotron X-ray diffraction was applied to films pressurized by a multi-anvil press installed in the PF-AR NE5C beamline at KEK at room temperature and at a high-temperature around 200 °C. The pair distribution functions derived by Fourier transformation of the obtained scattering intensity profiles showed that the sp²/sp³ ratios for both films decreased as the pressure increased and that the sp²/sp³ ratio for the a-C:H film increased as the temperature increased. This indicates that high-pressure creates sp³ stabilization in a-C:H and a-C:H:Si films while high-temperature creates sp² transition in a-C:H film. The sp²/sp³ ratio for the a-C:H:Si film did not change much even at high-temperature due to the high thermal-oxidative stability of a-C:H:Si.     

Boron doped amorphous carbon thin films grown by r.f. PECVD under different partial pressure

Boron doped hydrogenated amorphous carbon (a-C) thin films have been deposited by r.f.-plasma CVD with a frequency of 13.56 MHz at room temperature using pure methane as a precursor of carbon source mixed with hydrogen (H₂) as a carrier gas. The films were prepared by varying the r.f. power, different flow rates of CH₄, and partial pressure of mixed gas (CH₄/H₂) using solid boron as a target. The thickness, structural, bonding and optical properties of the as-deposited films were studied by Alpha step surface profiler, Raman, FT-IR, XPS and UV–visible spectroscopy. It was found that changing the deposition pressure in presence of solid boron dopant in the r.f. PECVD process has a profound effect on the properties of the deposited films, as evidenced from their Raman scattering and optical results. The grown p-C: B films were found very smooth and thickness in the range of 240 to 360 nm for 1 h deposition. Films deposited at lower pressure appear brownish color whereas those deposited at higher pressure appear pale yellowish. The as-deposited film is found to be dominated by sp² rather than sp³, which might be due to the formation of small crystallites. The optical band gap is found to be reduced from 2.601.58 eV as the partial pressure of CH₄/H₂ gas is reduced.     

Effect of ion bombardment and hydrogen pressure during deposition on the optical properties of hydrogenated amorphous carbon thin films

Carbon-based thin films are ideal materials for several state-of-the-art applications, such as protective materials and as active films for organic electronics, medical, optoelectronic devices. In this work, we study in detail the effect of the ion-bombardment and the hydrogen partial pressure during deposition on the optical properties of hydrogenated amorphous carbon (a-C:H) thin films grown onto c-Si substrates by rf magnetron sputtering. The optical properties of the a-C:H films were investigated by phase modulated Spectroscopic Ellipsometry in a wide spectral region from the NIR to the Vis-far UV (0.7-6.5 eV). A dispersion model based on two Tauc-Lorentz oscillators, has been applied for the analysis of the measured < ε(ω)> of the a-C:H films to describe the π-π* and σ-σ* interband electronic transitions, that can describe accurately the optical properties of all amorphous carbons. The applied V_b influences the bombardment of the growing thin films with Ar ions affecting the content of sp² and sp³ hybridized carbon bonds in the films. As it was found, the increase of the applied negative voltage reduces the optical transparency of the a-C:H films. Also, the H incorporation has been found to change only the energy position of the σ-σ* transitions. Finally, from the study of the refractive index n(ω = 0 eV) it has been found that the increase of the ion bombardment during the films deposition is correlated to an increase in the films density.     

Effect of deposition voltage on the microstructure of electrochemically deposited hydrogenated amorphous carbon films

Hydrogenated amorphous carbon (a-C:H) films were deposited on Si substrates by electrolysis in a methanol solution at ambient pressure and a low temperature (50 °C), using various deposition voltages. The influence of deposition voltage on the microstructure of the resulting films was analyzed by visible Raman spectroscopy at 514.5 nm and X-ray photoelectron spectroscopy (XPS). The contents of sp³ bonded carbon in the various films were obtained by the curve fitting technique to the C1s peak in the XPS spectra. The hardness and Young’s modulus of the a-C:H films were determined using a nanoindenter. The Raman characteristics suggest an increase of the ratio of sp³/sp² bonded carbon with increasing deposition voltage. The percentage of sp³-bonded carbon is determined as 33–55% obtained from XPS. Corresponding to the increase of sp³/sp², the hardness and Young’s modulus of the films both increase as the deposition voltage increases from 800 V to 1600 V.     

ArF (193nm) laser ablation of poly(methyl methacrylate)

We report results from a range of complementary studies of pulsed ArF (193 nm) laser ablation of poly(methyl-methacrylate), PMMA, in vacuo, and in the presence of low background pressures of Ar and He, designed to identify correlations between the properties of the plume and those of the a-C:H films that result when the plume is incident on a NaCl substrate. The plume itself has been investigated by wavelength, spatially and/or temporally resolved measurements of the emission from electronically excited H¹, C¹, O¹, CH¹ and C₂¹ fragments, and by Langmuir probe (time-of-flight) measurements of the positively and negatively charged ablated particles, as a function of laser fluence and of ambient gas pressure. Infrared absorption spectroscopy suggests that a-C:H films deposited following pulsed laser ablation of PMMA under low pressures of Ar contain similar C:H:O ratios to the parent polymer, but also confirms previous reports that films deposited in vacuo have a reduced H content.     

Deposition of iron containing amorphous carbon films by filtered cathodic vacuum arc technique

Iron containing amorphous carbon (a-C:Fe) films have been deposited with an Fe/graphite composite target with different Fe content by filtered cathodic vacuum arc (FCVA) technique. X-Ray induced photoelectron spectroscopy (XPS) was used to analyze the Fe content in the films. Micro-Raman spectroscopy was employed to characterize the structural changes of a-C:Fe films. The properties of the a-C:Fe films such as the intrinsic stress, morphology and roughness investigated by the profiler, atomic force microscope (AFM). The XPS results show that there exists small amount of oxygen in the form of FeO in the films and the Fe fraction in the films is always larger than that in the target. Compared with pure amorphous carbon films the intrinsic stress was effectively reduced by incorporating Fe into the films, and decreases with increasing Fe content. As increasing the Fe content, the clusters in the films become finer and the roughness increases The studies of Raman spectra show that the positions of G peak and D peak shift to low and high wavenumbers, respectively, and the ratio of the intensity of D and G peaks increases with an increase in Fe content, that suggests that the sp²-bonded carbon and the size of the sp²-bonded cluster increases with an increase in the Fe content.     

Structural investigation and gas barrier performance of diamond-like carbon based films on polymer substrates

In this report, tetrahedral amorphous carbon (ta-C), hydrogenated amorphous carbon (a-C:H), silicon doped tetrahedral amorphous carbon (ta-C:Si:H), and silicon doped hydrogenated amorphous carbon (a-C:H:Si) films with thickness in the range 50-370 nm have been produced by PECVD (Plasma Enhanced Chemical Vapour Deposition) and FCVA ( Filtered Cathodic Vacuum Arc) techniques on Polyethylene terepthalate (PET) and polycarbonate (PC) substrates. The paper is concerned with exploring the links between the atomic structure, gas barrier performance in carbon based films deposited on polymer substrates. A range of techniques including XRR, NEXAFS, Raman, surface profilometry, nano-indentation and water vapour permeation analysis were used to analyze the microstructure and properties of the films. The intensity and area of π* peak at the C K (carbon) edge of the NEXAFS spectra was lower in the FCVA films in comparison to that of PECVD ones confirming the higher sp³ content of FCVA films. The surface of ta-C films showed a network of micro-cracks, which is detrimental for gas barrier application. However, the surfaces of both ta-C:H:Si and a-C:H:Si silicon-incorporated films were almost free of cracks. We also found that the incorporation of Si into both types of DLC films lead to a significant reduction of water vapour transmission rate.     

Optical and electrical properties of a-C:H deposited by magnetic confinement of r.f. PECVD plasma

Amorphous hydrogenated carbon (a-C:H) thin films have been deposited in an r.f. PECVD chamber using a magnetic multipole system to confine the plasma. The influence of magnetic field on both the plasma parameters and the film properties has been studied. The results are compared with those obtained under similar conditions using a standard PECVD system. Optical emission spectroscopy (OES) shows an increase in the intensity of the hydrogen and C–H lines in the plasma. EELS, optical, electrical and electron field emission measurements have been used to characterize the deposited films. The sp³/sp² ratio was increased using the magnetic field and the optical gap was also increased as compared to films grown using a standard process. The electron field emission was found to be improved (higher current density and smaller barrier height) for samples deposited in the presence of the magnetic field.     

Hydrogenated amorphous carbon films deposited on 316L stainless steel

Research on hydrogen amorphous carbon films (a-C:H), which possess the diamond-like characteristic, has been stimulated for many years by need to simultaneously optimizing the mechanical, optical and biological properties, and by challenges related to the deposition of a-C:H films on medical implants. In the present work, we investigate the structure, optical and mechanical properties (hardness, elastic modulus and stress) of a-C:H films deposited on 316L stainless steel substrate by the radio frequency plasma enhanced chemical vapor deposition (RF PECVD). The negative self-bias voltages significantly influence on temperature of steel substrates during the deposition process and films properties. Specifically, the high energetic deposition leads also to stabilization of the sp² content and thermally-activated relaxation in the stress of a-C:H films. Presented correlation between the obtained results and literature analysis let deem the Raman spectra as a good tool to control the properties of implants made of 316L stainless steel with a-C:H film for general use.     

The role of pressure on thin amorphous carbon films deposited using microwave surface wave plasma CVD

We report the effects of gas composition pressure (GCP) on the optical, structural and electrical properties of thin amorphous carbon (a-C) films grown on p-type silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition (MW SWP CVD). The films, deposited at various GCPs ranging from 50 to 110 Pa, were studied by UV/VIS/NIR spectroscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and current–voltage characteristics. The optical band gap of the a-C film was tailored to a relatively high range, 2.3–2.6 eV by manipulating GCPs from 50 to 110 Pa. Also, spin density strongly depended on the band gap of the a-C films. Raman spectra showed qualitative structured changes due to sp³/sp² carbon bonding network. The surfaces of the films are found to be very smooth and uniform (RMS roughness < 0.5 nm). The photovoltaic measurements under light illumination (AM 1.5, 100 mW/cm²) show that short-circuit current density, open-circuit voltage, fill factor and photo-conversion efficiency of the film deposited at 50 Pa were 6.4 μA/cm², 126 mV, 0.164 and 1.4 × 10^− 4% respectively.     

Water-repellency and surface free energy of a-C:H films prepared by heat-treatment of polymer precursor

Amorphous hydrogenated carbon (a-C:H) films with high water-repellency were prepared on Si substrates by a simple heat-treatment of the poly(phenylcarbyne) polymer at various temperature in Ar atmosphere. The contact-angle (CA) was measured by the sessile-drop technique. The use of CA for different liquid (water, ethylene glycol, and formamide) analysis for the evaluation of surface energy including the dispersion and polar components was described. The influences of surface roughness, chemical composition, and microstructure of carbon films on water CA and surface energy were investigated by atomic force microscopy (AFM), Fourier transforms infrared spectrometry (FTIR), and Raman spectroscopy, respectively. As the results, the a-C:H films exhibit good hydrophobicity and low surface free energy. The CA of a-C:H films slight increases and the surface free energy of a-C:H films reduces with the increase of the heat-treatment temperature. The a-C:H films are hydrophobic for not only pure water but also corrosive liquids, such as acidic and alkali solutions. The roughness of the films has no obvious effect on the CA and the reduction of surface energy with the increase of heat-treatment temperature is related to increase of sp² content in the film.     

Polymeric amorphous carbon films with an extended range of optical gaps

A new type of hydrogenated amorphous carbon (a-C:H) film is prepared under low bias voltage and an extended range of plasma density in a radio-frequency plasma enhanced chemical vapor deposition system (RF-PECVD). The obtained a-C:H samples are grown on electrically floating substrates instead of substrates mounted on the powered or the grounded electrode of RF-PECVD, and have structure and properties that are significantly different from regular a-C:H films. The samples have an optical gap ranging from 1 to 4 eV, while maintaining low intrinsic stress between 0.1 and 0.2 GPa. Fractions of all types of CH_x carbon–hydrogen groups of the obtained samples are measured, analyzed, and used to locate these samples in the carbon-hydrogen ternary phase diagram. The obtained samples are located in the same general area as the regular a-C:H films, indicating configurational rather than compositional structural differences. The hydrogenation ratio of sp³ carbons in the obtained samples is found to remain at a very high level, and is used to explain their unique properties.     

Surface and interface morphology and structure of amorphous carbon thin and multilayer films

We review the implementation of X-ray reflection (reflectivity and scattering) techniques for the study of amorphous Carbon (a-C, a-C:H, ta-C) thin and multilayer films and in particular in the determination of the film density and surface and interface morphology, which are intrinsically significant for ultra-thin films. We present studies of various a-C and a-C:H films, which include in particular: i) the morphology of a-C/Si interface, ii) the surface morphology and density evolution during sputter growth of a-C, iii) the morphology of the sp²-rich a-C/sp³-rich a-C interfaces in multilayer a-C films, iv) the universal correlation between the film density and the refractive index of a-C and a-C:H films. We also compare and validate the experimental results with relative results from Monte-Carlo simulations within an empirical potential scheme. The computational results shed light on the atomistic mechanisms determining the structure and morphology of the a-C interfaces between individual sp²- and sp³-rich a-C layers and between a-C and Si substrates.     

Metal-containing amorphous carbon film development using electron cyclotron resonance CVD

A technique for depositing metal–carbon (Me-C:H) thin films is demonstrated based on two metal screen grids embedded within an electron cyclotron resonance chemical vapour deposition (ECR-CVD) system. The grids are negatively biased and supported at adjustable distances above the substrate holder in the deposition chamber. With source gases of methane and argon, sputtering of the metal grids by Ar⁺ results in the incorporation of metal in the growing carbon films. The amount of metal in the films can be very well controlled over a wide range by varying the bias voltage at the grids, the separation of the grids from the substrate holder and the ratio of CH₄/Ar. Furthermore, by separately biasing the substrate holder, the properties of the films can be varied resulting in the formation of a great variety of Me-C:H films with very different mechanical and structural properties. Tungsten (W-C:H) and molybdenum (Mo-C:H) incorporated carbon films were deposited using this technique, with the metal fractions controlled by varying the flow ratio of CH₄/Ar and the bias at the substrates. The films were characterised using Rutherford backscattering, X-ray diffraction and Raman scattering measurements, and also in terms of their conductivity, optical absorption and hardness. Large changes are observed in the conductivity and optical gap of the films even at low fraction of metal incorporated. Metal carbides formation was observed for films deposited under bias. The results suggest that the substrate bias has a crucial effect on the incorporation of metal into the a-C:H films and their resulting microstructures.     

A correlation between the microstructure and optical properties of hydrogenated amorphous carbon films prepared by RF magnetron sputtering

Comparative and systematic studies of the effect of the radiofrequency (RF) bias on the microstructure and the optical properties of hydrogenated amorphous carbon (a-C:H) have been carried out on films deposited by RF magnetron sputtering under different RF power varying from 10 to 250 W applied to the graphite target, leading to a negative bias voltage at the target in the range of −60 to −600 V.A combination of infrared (IR) absorption experiments, which give information about the local microstructure (i.e. C–C and C–H bonding), and optical transmission measurements in the UV-visible and near IR, from which we determined the optical gap E₀₄ and the refractive index n, are applied to fully characterize the samples in their as-deposited state. The results show first that the films deposited at low RF power (i.e. low negative bias) exhibit a more open microstructure (polymeric character) with a lower density than those deposited at high RF power (i.e. high negative bias). They also indicate that the total bonded H content as well as the sp³/sp² ratio of carbon atoms bonded to H decrease with increasing RF power leading to the formation of higher proportions of C-sp² sites. The same tendency is observed for the optical gap E₀₄. On the contrary, the refractive index increases with increasing RF power, suggesting the densification of the films in going to a higher RF power.     

Internal stress of a-C:H(N) films deposited by radio frequency plasma enhanced chemical vapor deposition

Amorphous hydrogenated carbon nitride [a-C:H(N)] films were deposited from the mixture of C₂H₂ and N₂ using the radio frequency plasma enhanced chemical vapor deposition technique. The films were characterized by X-ray photon spectroscopy, infrared, and positron annihilation spectroscopy. The internal stress was measured by substrate bending method. Up to 9.09 at% N was incorporated in the films as the N₂ content in the feed gas was increased from 0 to 75%. N atoms are chemically bonded to C as C–N, CN and CN bond. Positron annihilation spectra shows that density of voids increases with the incorporation of nitrogen in the films. With rising nitrogen content the internal stress in the a-C:H(N) films decrease monotonically, and the rate of decrease in internal stress increase rapidly. The reduction of the average coordination number and the relax of films structure due to the decrease of H content and sp³/sp² ratio in the films, the incorporation of nitrogen atoms, and the increases of void density in a-C:H(N) films are the main factors that induce the reduction of internal stress.     

X-ray photoemission spectroscopy of nitrogen-doped UNCD/a-C:H films prepared by pulsed laser deposition

Nitrogen-doped ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) films were deposited by pulsed laser deposition (PLD). Nitrogen contents in the films were controlled by varying a ratio in the inflow amount between nitrogen and hydrogen gases. The film doped with a nitrogen content of 7.9 at.% possessed n-type conduction with an electrical conductivity of 18 Ω^? 1 cm^? 1 at 300 K. X-ray photoemission spectra, which were measured using synchrotron radiation, were decomposed into four component spectra due to sp², sp³ hybridized carbons, C=N and C–N. A full-width at half-maximum of the sp³ peak was 0.91 eV. This small value is specific to UNCD/a-C:H films. The sp²/(sp³ + sp²) value was enhanced from 32 to 40% with an increase in the nitrogen content from 0 to 7.9 at.%. This increment probably originates from the nitrogen incorporation into an a-C:H matrix and grain boundaries of UNCD crystallites. Since an electrical conductivity of a-C:H does not dramatically enhance for this doping amount according to previous reports, we believe that the electrical conductivity enhancement is predominantly due to the nitrogen incorporation into grain boundaries.     

Relations between the deposition conditions,the microstructure and the defects in PECVD hydrogenated amorphous carbon films; influence on the electronic density of states

The relationships between the deposition conditions, the growth mechanisms, the microstructure and the electronic density of states of hydrogenated amorphous carbon (a-C:H) films prepared by PECVD from hydrocarbons are not yet fully understood. We therefore performed a systematic study using several complementary techniques to determine the changes in the microstructure and in the optical properties of a-C:H samples deposited from a dual micro-wave/radio-frequency discharge in methane as a function of the negative r.f. bias voltage applied to the substrate −V_b. The results reveal the existence of two successive film growth regimes when varying −V_b from −30 to −600 V, i.e. when increasing the ion bombardment during deposition, which lead to different types of sp² C atoms clustering and H incorporation, but to the same density of paramagnetic defects. Models of the a-C:H microstructure are proposed in each case, and their influence on the electronic states density is analysed in detail. It is shown that the H content and the proportion of sp² C atoms play a minor role on the electronic properties, as compared to the nature, the size, the number and probably the distortions of the π-bonded clusters.     

Ion beam deposition of amorphous hydrogenated carbon films on amorphous silicon interlayer: Experiment and simulation

A thick layer of amorphous silicon (a-Si) was deposited on industrial grade crystalline n-Si < 111 > substrate by means of electron beam evaporation. On top of a-Si layer, amorphous hydrogenated carbon (a-C:H) film was grown by direct ion beam deposition from acetylene precursor gas. In order to study on atomic level the a-C:H film growth on amorphous silicon, a theoretical model was developed in a form of reaction rate (kinetic) equations. Numerical simulation using this model has revealed that the ratio of sp³/sp² content in the film is heavily influenced by relaxation rate of the carbon atoms in a sub-surface region of the film that were activated by ion irradiation. The final structure of a-C:H film does not depend much on elemental composition and structure of amorphous Si coating, provided that deposition procedure is not terminated at its initial stage but continues for more than 60 s. It became evident, therefore, that the use of a-Si interlayer with a-C:H films could be particularly beneficial when a need arises to minimize or eliminate the effect of the substrate. As one of such cases, a poor adhesion of amorphous carbon on steel and other ferrous alloys could be mentioned.     

Diamond-like a-C:H(:F) films obtained by d.c. magnetron sputtering

Diamond-like a-C:H and a-C:H:F films were obtained by reactive d.c. magnetron sputtering from a glassy carbon target in an argon-hydrogen atmosphere. For the deposition of a-C:H:F layers, hexafluoroethane (C₂F₆) was added to the sputtering atmosphere. The a-C:H(:F) films are transparent and mechanically hard. The films can be used as protective and antireflective coatings on a-Si:H photoreceptors. Electrical, optical and structural properties of the a-C:H(:F) films are examined. Fluorinated films are found to have a more compact structure and exhibit a higher stability to ambient temperatures than unfluorinated material.