Structural analysis of a-C:H and a-C:H:Si films under high-pressure and high-temperature by synchrotron X-ray diffraction

Amorphous carbon films have several outstanding tribology characteristics, including high hardness, surface smoothness, and low friction. Under tribological conditions, their surface is generally exposed to high-temperature and pressure. Although the structure of amorphous carbon films is likely changed by high temperature and pressure, there have been no reports on such structural changes of the films. To obtain information about their structural changes, synchrotron X-ray diffraction was used to analyze two kinds of amorphous carbon films, a-C:H and a-C:H:Si, under high-temperature and high-hydrostatic pressure conditions. Synchrotron X-ray diffraction was applied to films pressurized by a multi-anvil press installed in the PF-AR NE5C beamline at KEK at room temperature and at a high-temperature around 200 °C. The pair distribution functions derived by Fourier transformation of the obtained scattering intensity profiles showed that the sp²/sp³ ratios for both films decreased as the pressure increased and that the sp²/sp³ ratio for the a-C:H film increased as the temperature increased. This indicates that high-pressure creates sp³ stabilization in a-C:H and a-C:H:Si films while high-temperature creates sp² transition in a-C:H film. The sp²/sp³ ratio for the a-C:H:Si film did not change much even at high-temperature due to the high thermal-oxidative stability of a-C:H:Si.     

Transmission electron microscopy study of diamond nucleation and growth on smooth silicon surfaces coated with a thin amorphous carbon film

Amorphous carbon (a-C) films with high contents of tetrahedral carbon bonding (sp³) were synthesized on smooth Si(100) surfaces by cathodic arc deposition. Before diamond growth, the a-C films were pretreated with a low-temperature methane-rich hydrogen plasma in a microwave plasma-enhanced chemical vapor deposition system. The evolution of the morphology and microstructure of the a-C films during the pretreatment and subsequent diamond nucleation and initial growth stages was investigated by high-resolution transmission electron microscopy (TEM). Carbon-rich clusters with a density of ∼10¹⁰ cm⁻² were found on pretreated a-C film surfaces. The clusters comprised an a-C phase rich in sp³ carbon bonds with a high density of randomly oriented nanocrystallites and exhibited a high etching resistance to hydrogen plasma. Selected area diffraction patterns and associated dark-field TEM images of the residual clusters revealed diamond fingerprints in the nanocrystallites, which played the role of diamond nucleation sites. The presence of non-diamond fingerprints indicated the formation of Si–C-rich species at C/Si interfaces. The predominantly spherulitic growth of the clusters without apparent changes in density yielded numerous high surface free energy diamond nucleation sites. The rapid evolution of crystallographic facets in the clusters observed under diamond growth conditions suggested that the enhancement of diamond nucleation and growth resulted from the existing nanocrystallites and the crystallization of the a-C phase caused by the stabilization of sp³ carbon bonds by atomic hydrogen. The significant increase of the diamond nucleation density and growth is interpreted in terms of a simple three-step process which is in accord with the experimental observations.     

Improving the corrosion resistance of a-C:H film by a top a-C:H:Si:O layer

During the deposition of a-C:H film, defects (pinholes or discontinuities) caused by excessive stress will inevitably appear, which will reduce the corrosion resistance of the a-C:H film. In this study, top a-C:H:Si:O layers (thickness of approximately 0.3 μm) on the surface of a-C:H films were deposited on a large scale by PACVD technology using acetylene (C₂H₂) and/or hexamethyldisiloxane (HMDSO) as reactants, to improve the corrosion resistance of a-C:H films while ensuring the appropriate overall hardness of the films. The corrosion behaviors of the films were studied by electrochemical impedance spectroscopy (EIS) and Tafel polarization. We found that the a-C:H/a-C:H:Si:O films possess a lower electrolyte penetration rate due to their stronger capacitance characteristics. In addition, the corrosion current density of the a-C:H/a-C:H:Si:O films (10^?10 A cm^?2) were reduced by 2 orders of magnitude compared to the a-C:H film (10^?8 A cm^?2), and by 3 orders of magnitude compared to 316 stainless steel (10^?7 A cm^?2). The impedance results obtained by EIS were simulated using appropriate equivalent circuits, and the corresponding electrical parameters were used to further verify the electrochemical protection behavior of the top a-C:H:Si:O layer.     

Properties of a-C:H films grown in inert gas ambient with camphoric carbon precursor of pulsed laser deposition

The influence of the ambient argon gas (Ar) pressure on the properties of the hydrogenated amorphous carbon (a-C:H) films deposited by pulsed laser deposition (PLD) using camphoric carbon (CC) target have been studied. The a-C:H films are deposited with varying Ar pressure range from 0.01 to 0.23 Torr. SEM and AFM show that the particle size of films is decreases, while the roughness increases with higher Ar pressure. The FTIR measurement revealed the presence of hydrogen in the a-C:H films. We found the surface morphology, structural and physical properties structure of a-C:H films are influenced by the presence of inert gas and the ratio of sp² trigonal component to sp³ tetrahedral component is strongly dependent on the inert gas pressure. We suggest that these phenomena are due to the effect of the optimum concentration of the Ar atoms in the C lattice. Improvement of the structural properties of the a-C:H films deposited in inert gas environment using CC target reveals different behaviour than reported earlier.     

Residual stress relief of hard a-C films though buckling

To characterize the adhesive failure mode in amorphous-carbon (a-C) films, and to explore the effects of stress relief mechanism on the mechanical properties of the films, the microstructure and the morphologies of the buckled and peeled a-C films were characterized by various techniques, including transmission electron microscopy (TEM), scanning electron microscopy (SEM), Raman spectrum and X-ray photoelectron spectroscopy (XPS). Results indicated that there is obvious buckling between the stress relieved a-C films and Si substrates, and the development of the buckling blister was derived from the residual compressive stress. The as-deposited a-C films voluntarily buckled along the film growth direction above Si substrate when film thickness reached a certain size, and became more and more remarkable, resulting in eventual peeling. These buckling and peeling processes can relieve the residual stress of the a-C films by eliminating the mechanical restriction of Si substrates. The corresponding sp² hybridization transformation and the reconfiguring graphitic phase were detected in the stress relived a-C films, which can induce buckling and spalling in the a-C films.     

Structural investigation and gas barrier performance of diamond-like carbon based films on polymer substrates

In this report, tetrahedral amorphous carbon (ta-C), hydrogenated amorphous carbon (a-C:H), silicon doped tetrahedral amorphous carbon (ta-C:Si:H), and silicon doped hydrogenated amorphous carbon (a-C:H:Si) films with thickness in the range 50-370 nm have been produced by PECVD (Plasma Enhanced Chemical Vapour Deposition) and FCVA ( Filtered Cathodic Vacuum Arc) techniques on Polyethylene terepthalate (PET) and polycarbonate (PC) substrates. The paper is concerned with exploring the links between the atomic structure, gas barrier performance in carbon based films deposited on polymer substrates. A range of techniques including XRR, NEXAFS, Raman, surface profilometry, nano-indentation and water vapour permeation analysis were used to analyze the microstructure and properties of the films. The intensity and area of π* peak at the C K (carbon) edge of the NEXAFS spectra was lower in the FCVA films in comparison to that of PECVD ones confirming the higher sp³ content of FCVA films. The surface of ta-C films showed a network of micro-cracks, which is detrimental for gas barrier application. However, the surfaces of both ta-C:H:Si and a-C:H:Si silicon-incorporated films were almost free of cracks. We also found that the incorporation of Si into both types of DLC films lead to a significant reduction of water vapour transmission rate.     

Relations between the deposition conditions,the microstructure and the defects in PECVD hydrogenated amorphous carbon films; influence on the electronic density of states

The relationships between the deposition conditions, the growth mechanisms, the microstructure and the electronic density of states of hydrogenated amorphous carbon (a-C:H) films prepared by PECVD from hydrocarbons are not yet fully understood. We therefore performed a systematic study using several complementary techniques to determine the changes in the microstructure and in the optical properties of a-C:H samples deposited from a dual micro-wave/radio-frequency discharge in methane as a function of the negative r.f. bias voltage applied to the substrate −V_b. The results reveal the existence of two successive film growth regimes when varying −V_b from −30 to −600 V, i.e. when increasing the ion bombardment during deposition, which lead to different types of sp² C atoms clustering and H incorporation, but to the same density of paramagnetic defects. Models of the a-C:H microstructure are proposed in each case, and their influence on the electronic states density is analysed in detail. It is shown that the H content and the proportion of sp² C atoms play a minor role on the electronic properties, as compared to the nature, the size, the number and probably the distortions of the π-bonded clusters.     

Water-repellency and surface free energy of a-C:H films prepared by heat-treatment of polymer precursor

Amorphous hydrogenated carbon (a-C:H) films with high water-repellency were prepared on Si substrates by a simple heat-treatment of the poly(phenylcarbyne) polymer at various temperature in Ar atmosphere. The contact-angle (CA) was measured by the sessile-drop technique. The use of CA for different liquid (water, ethylene glycol, and formamide) analysis for the evaluation of surface energy including the dispersion and polar components was described. The influences of surface roughness, chemical composition, and microstructure of carbon films on water CA and surface energy were investigated by atomic force microscopy (AFM), Fourier transforms infrared spectrometry (FTIR), and Raman spectroscopy, respectively. As the results, the a-C:H films exhibit good hydrophobicity and low surface free energy. The CA of a-C:H films slight increases and the surface free energy of a-C:H films reduces with the increase of the heat-treatment temperature. The a-C:H films are hydrophobic for not only pure water but also corrosive liquids, such as acidic and alkali solutions. The roughness of the films has no obvious effect on the CA and the reduction of surface energy with the increase of heat-treatment temperature is related to increase of sp² content in the film.     

Ion beam deposition of amorphous hydrogenated carbon films on amorphous silicon interlayer: Experiment and simulation

A thick layer of amorphous silicon (a-Si) was deposited on industrial grade crystalline n-Si < 111 > substrate by means of electron beam evaporation. On top of a-Si layer, amorphous hydrogenated carbon (a-C:H) film was grown by direct ion beam deposition from acetylene precursor gas. In order to study on atomic level the a-C:H film growth on amorphous silicon, a theoretical model was developed in a form of reaction rate (kinetic) equations. Numerical simulation using this model has revealed that the ratio of sp³/sp² content in the film is heavily influenced by relaxation rate of the carbon atoms in a sub-surface region of the film that were activated by ion irradiation. The final structure of a-C:H film does not depend much on elemental composition and structure of amorphous Si coating, provided that deposition procedure is not terminated at its initial stage but continues for more than 60 s. It became evident, therefore, that the use of a-Si interlayer with a-C:H films could be particularly beneficial when a need arises to minimize or eliminate the effect of the substrate. As one of such cases, a poor adhesion of amorphous carbon on steel and other ferrous alloys could be mentioned.     

Diamond-like carbon films: electron spin resonance (ESR) and Raman spectroscopy

Tetrahedral diamond-like carbon (ta-C) films and hydrogenated a-C:H films were deposited onto Si substrates using filtered cathodic vacuum arc (FCVA) process and direct ion beam deposition from CH₄/C₂H₄ plasma, respectively. Stress of deposited films was varied in the range 2.8–8.5 GPa depending on deposition conditions. Stationary and pulse electron spin resonance (ESR), and Raman spectroscopy techniques were used to analyze sp² related defects in pseudo-gap of undoped as deposited and annealed 20–100 nm thick films.¹ High density of ESR active paramagnetic centers (PC) N_s=(1.0–4.5)×10²¹ cm⁻³ at g=2.0025 was observed in the films. The dependence of ESR line width and line shape vs. deposition conditions and internal film stress were investigated. The several actual mechanisms for ESR line width broadening were considered: spin–spin dipole–dipole and exchange interactions, super-hyperfine interaction (SHFI) with ¹H (for a-C:H), averaging of SHFI due to electron jumps between PC positions with different SHFI values, and broadening due to Mott's electron hopping process. Three types of samples were revealed depending on relative contribution of these mechanisms. Effects of annealing on mechanical and paramagnetic properties of films were studied. An electrical resistance anisotropy at room temperature for ta-C films and g-value anisotropy at low temperature (T<77 K) for both ta-C and a-C:H films were found for the first time. Nature and distribution details of paramagnetic defects in DLC films, anisotropy effects and Raman spectroscopy data are discussed.     

Effect of deposition voltage on the microstructure of electrochemically deposited hydrogenated amorphous carbon films

Hydrogenated amorphous carbon (a-C:H) films were deposited on Si substrates by electrolysis in a methanol solution at ambient pressure and a low temperature (50 °C), using various deposition voltages. The influence of deposition voltage on the microstructure of the resulting films was analyzed by visible Raman spectroscopy at 514.5 nm and X-ray photoelectron spectroscopy (XPS). The contents of sp³ bonded carbon in the various films were obtained by the curve fitting technique to the C1s peak in the XPS spectra. The hardness and Young’s modulus of the a-C:H films were determined using a nanoindenter. The Raman characteristics suggest an increase of the ratio of sp³/sp² bonded carbon with increasing deposition voltage. The percentage of sp³-bonded carbon is determined as 33–55% obtained from XPS. Corresponding to the increase of sp³/sp², the hardness and Young’s modulus of the films both increase as the deposition voltage increases from 800 V to 1600 V.     

Fourier transform infrared spectroscopic study of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition

Nitrogen-doped ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite films, which possess n-type conduction with enhanced electrical conductivities, were prepared by pulsed laser deposition and they were structurally studied by Fourier transform infrared (FTIR) spectroscopy. The film with a nitrogen content of 7.9 at.% possessed n-type condition with an electrical conductivity of 18 S/cm at 300 K. The FTIR spectra revealed peaks due to nitrogen impurities, C = N, C-N, and CH_n (n = 1, 2, 3) bands. The sp²-CH_n/(sp²-CH_n + sp³-CH_n), estimated from the area-integration of decomposed peaks, were 24.5 and 19.4% for undoped and 7.9 at.% doped films, respectively. The nitrogen-doping not only form the chemical bonds between carbon and nitrogen atoms such as C = N and C-N bonds but also facilitate the formation of both sp² and sp³ bonds, in particular, the sp³-CH_n bond is preferentially formed. From the analysis of the FTIR spectra, it was found that the hydrogen content in the film is increased with an increase in the nitrogen content. The increased hydrogen content might be owing to the enhanced volume of grain boundaries (GBs) between UNCD grains, and those between UNCD grains and an a-C:H matrix, which is caused by a reduction in the UNCD grain size. The CH_n peaks predominantly come from an a-C:H matrix and GBs. Since the nitrogen-doping for a-C:H has been known to be hardly effective, the n-type conduction with the enhanced electrical conductivities might be attributed to the sp²-CH_n formation at the GBs.     

Hydrogenated amorphous carbon films deposited on 316L stainless steel

Research on hydrogen amorphous carbon films (a-C:H), which possess the diamond-like characteristic, has been stimulated for many years by need to simultaneously optimizing the mechanical, optical and biological properties, and by challenges related to the deposition of a-C:H films on medical implants. In the present work, we investigate the structure, optical and mechanical properties (hardness, elastic modulus and stress) of a-C:H films deposited on 316L stainless steel substrate by the radio frequency plasma enhanced chemical vapor deposition (RF PECVD). The negative self-bias voltages significantly influence on temperature of steel substrates during the deposition process and films properties. Specifically, the high energetic deposition leads also to stabilization of the sp² content and thermally-activated relaxation in the stress of a-C:H films. Presented correlation between the obtained results and literature analysis let deem the Raman spectra as a good tool to control the properties of implants made of 316L stainless steel with a-C:H film for general use.     

Thermal grafting of organic monolayers on amorphous carbon and silicon (111) surfaces: A comparative study

Thermally-assisted (160 °C) liquid phase grafting of linear alkene molecules has been performed simultaneously on amorphous carbon (a-C) and hydrogen passivated crystalline silicon Si(111):H surfaces. Atomically flat a-C films with a high sp³ average surface hybridization, sp³ / (sp² + sp³) = 0.62, were grown using pulsed laser deposition (PLD). Quantitative analysis of X-ray photoelectron spectroscopy, X-ray reflectometry and spectroscopic ellipsometry data show the immobilization of a densely packed (> 3 × 10¹⁴ cm^? 2) single layer of organic molecules. In contrast with crystalline Si(111):H and other forms of carbon films, no surface preparation is required for the thermal grafting of alkene molecules on PLD amorphous carbon. The molecular grafted a-C surface is stable against ambient oxidation, in contrast with the grafted crystalline silicon surface.     

Hardness of nanocomposite a-C:Si films deposited by magnetron sputtering

Hydrogen-free a-C:Si films with Si concentration from 3 to 70 at.% were prepared by magnetron co-sputtering of pure graphite and silicon at room temperature. Mechanical properties (hardness, intrinsic stress), film composition (EPMA and XPS) and film structure (electron diffraction, Raman spectra) were investigated in dependence on Si concentration, substrate bias and deposition temperature. The film hardness was maximal for ∼ 45 at.% of Si and deposition temperatures 600 and 800 °C. Reflection electron diffraction indicated an amorphous structure of all the films. Raman spectra showed that the films in the range of 35–70 at.% of Si always contain three bands corresponding to the Si, SiC and C clusters. Photoelectron spectra showed dependency of Si–C bond formation on preparation conditions. In the films close to the stoichiometric SiC composition, the surface and sub-surface carbon atoms exhibited dominantly sp³ bonds. Thus, the maximal hardness was observed in nanocomposite a-C:Si films with a small excess of carbon atoms.     

Polymeric amorphous carbon films with an extended range of optical gaps

A new type of hydrogenated amorphous carbon (a-C:H) film is prepared under low bias voltage and an extended range of plasma density in a radio-frequency plasma enhanced chemical vapor deposition system (RF-PECVD). The obtained a-C:H samples are grown on electrically floating substrates instead of substrates mounted on the powered or the grounded electrode of RF-PECVD, and have structure and properties that are significantly different from regular a-C:H films. The samples have an optical gap ranging from 1 to 4 eV, while maintaining low intrinsic stress between 0.1 and 0.2 GPa. Fractions of all types of CH_x carbon–hydrogen groups of the obtained samples are measured, analyzed, and used to locate these samples in the carbon-hydrogen ternary phase diagram. The obtained samples are located in the same general area as the regular a-C:H films, indicating configurational rather than compositional structural differences. The hydrogenation ratio of sp³ carbons in the obtained samples is found to remain at a very high level, and is used to explain their unique properties.     

Optical and electrical properties of a-C:H deposited by magnetic confinement of r.f. PECVD plasma

Amorphous hydrogenated carbon (a-C:H) thin films have been deposited in an r.f. PECVD chamber using a magnetic multipole system to confine the plasma. The influence of magnetic field on both the plasma parameters and the film properties has been studied. The results are compared with those obtained under similar conditions using a standard PECVD system. Optical emission spectroscopy (OES) shows an increase in the intensity of the hydrogen and C–H lines in the plasma. EELS, optical, electrical and electron field emission measurements have been used to characterize the deposited films. The sp³/sp² ratio was increased using the magnetic field and the optical gap was also increased as compared to films grown using a standard process. The electron field emission was found to be improved (higher current density and smaller barrier height) for samples deposited in the presence of the magnetic field.     

X-ray photoemission spectroscopy of nitrogen-doped UNCD/a-C:H films prepared by pulsed laser deposition

Nitrogen-doped ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) films were deposited by pulsed laser deposition (PLD). Nitrogen contents in the films were controlled by varying a ratio in the inflow amount between nitrogen and hydrogen gases. The film doped with a nitrogen content of 7.9 at.% possessed n-type conduction with an electrical conductivity of 18 Ω^? 1 cm^? 1 at 300 K. X-ray photoemission spectra, which were measured using synchrotron radiation, were decomposed into four component spectra due to sp², sp³ hybridized carbons, C=N and C–N. A full-width at half-maximum of the sp³ peak was 0.91 eV. This small value is specific to UNCD/a-C:H films. The sp²/(sp³ + sp²) value was enhanced from 32 to 40% with an increase in the nitrogen content from 0 to 7.9 at.%. This increment probably originates from the nitrogen incorporation into an a-C:H matrix and grain boundaries of UNCD crystallites. Since an electrical conductivity of a-C:H does not dramatically enhance for this doping amount according to previous reports, we believe that the electrical conductivity enhancement is predominantly due to the nitrogen incorporation into grain boundaries.     

Spatial organization of the sp-hybridized carbon atoms and electronic density of states of hydrogenated amorphous carbon films

Hydrogenated amorphous carbon (a-C:H) films prepared by plasma decomposition of hydrocarbons exhibit a wide variety of electronic and mechanical properties depending on their deposition conditions, which makes them very interesting for applications in several domains. This versatility is essentially due to the presence of both sp²- and sp³-hybridized carbon atoms in variable proportions, and to the tendency of the sp² C atoms to gather into π-bonded clusters with different bonding configurations. The relationships between the film microstructure and their electronic density of states, as deduced from a detailed analysis of their optical properties over a large spectral range, are described and discussed, taking as reference materials the purely sp² (graphite) and purely sp³ (diamond) carbon crystalline phases, as well as the prototype hydrogenated amorphous tetra-coordinated semiconductor, hydrogenated amorphous silicon. It is shown that the type of clustering of the sp² C atoms is certainly more determinant for the electronic density of states, and especially for the optical gap value, than the proportion of these atoms in the material.     

Etching process of hydrogenated amorphous carbon (a-C:H) thin films in a dual ECR–r.f. nitrogen plasma

Hydrogenated amorphous carbon (a-C:H) films deposited from CH₄ in a dual electron cyclotron resonance (ECR)–r.f. plasma were treated in N₂ plasma at different r.f. substrate bias voltages after deposition. The etching process of a-C:H films in N₂ plasma was observed by in situ kinetic ellipsometry, mass spectroscopy (MS), and optical emission spectroscopy (OES). Ex situ atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) were used to characterize the etched film surface. XPS analysis proves that the nitrogen treatment on the a-C:H film, induced by r.f. substrate bias, causes a direct nitrogen incorporation in the film surface up to 15–17 at.% to a depth of about 20–40 Å depending on the r.f. bias. Various bonding states between carbon and nitrogen, such as tetrahedral sp³ C–N, and trigonal sp² C–N were confirmed by the deconvolution analysis of C 1s and N 1s core level spectra. The evolution of etching rate and the surface roughness in the film measured by AFM exhibit a clear dependence on the applied r.f. bias. MS and OES show the various neutral species in the N₂ plasma such as HCN, CN, and C₂N₂, which may be considered as the chemical etching products during the N₂ plasma treatment of a-C:H film.