高效率开关F3/E类功率放大器

介绍了一种高效F3/E类功率放大器的设计方法,该放大器将F类功率放大器的谐波控制电路引入逆E类功率放大器的负载网络,以改善放大器性能。此电路结构提升了放大器的功率输出能力,降低了电路对功率放大器管器件漏极耐压特性的要求,增强了器件工作时的安全性。详细阐述了该放大器的设计过程,并给出了负载网络各器件的最佳设计取值方程。选用GaNHEMT器件研制了S频段F3/E类功率放大器测试电路。实测结果表明该放大器在驱动功率为27 dBm时,可获得40.3 dBm的输出功率,具有13.3 dB增益,工作效率高达78.1%,功率附加效率为75.2%。实测结果与仿真结果吻合,验证了设计方法的正确性。     

一种宽禁带器件的高效E类功率放大器设计

E类功率放大器是一种新型高效率放大器,属于开关模式功率放大器,其理论效率可以达到100%。可用于雷达、通信和电子对抗等领域的末级功率放大器,是系统高效率、高功率和小型化功率放大器的重要途径。通过分析其工作原理,设计了一款L波段高效E类功率放大器,输出功率大于10 W,实际漏极效率达到74.8%。     

基于EFJ模式的宽带高效率Doherty功率放大器设计

将EFJ模式功率放大器应用于Doherty功率放大器的载波功率放大器,利用EFJ类功率放大器的阻抗特性改善了Doherty功率放大器的带宽。此外,还引入后谐波控制网络来提高Doherty功率放大器的效率。功放的输入匹配电路采用阶跃式阻抗匹配来进一步拓展工作带宽。使用CGH40010F GaN 晶体管设计并加工完成了一款宽带高效率Doherty功率放大器。测试结果显示,在3.2~3.7GHz 频段内,饱和输出功率达到43dBm,饱和漏极效率60%~72.5%,增益大于10dB。功率回退6dB时,漏极效率40%~48.5%。     

一种基于锥形微带线的宽带F 类功率放大器

提出了一种基于5G 频段的宽带高效率F 类功率放大器。分析表明锥形微带线可以有效解决矩形微带线对于带宽的限制问题, 同时将锥形微带线加入谐波控制网络, 可以实现在一定频率范围内将二次谐波阻抗匹配至短路点附近, 三次谐波阻抗匹配至开路点附近, 从而有效解决了F 类功率放大器带宽和效率的问题。使用锥形微带线制作的功放, 实测结果表明: 在2.7 ~3.8GHz 的频带范围内, 漏极效率达到63% ~78%, 平均输出功率达到10W以上, 大信号增益达到10dB 以上。在5G 无线通信中, 该功放可以有效地发挥其宽带高效率的特点。     

微带线碳化硅E类功率放大器设计

SiC MESFET由于其高击穿电压和低输出电容,适合用于设计E类功率放大器.设计了一种结构简单的微带线拓扑E类负载网络,可以匹配至标准电阻,且抑制高至5阶的谐波.用ADS软件进行电路仿真,在2.14 GHz频率点下,峰值功率附加效率(PAE)为70.5%,漏极效率可达80%,功率增益约为10 dB.     

一种55 nm CMOS 5 GHz高效E类射频功率放大器

为了减小功率放大器的功率损耗、提高功率附加效率,基于TSMC 55 nm CMOS工艺,设计了一种工作频率为5 GHz的高效率E类射频功率放大器。采用包含驱动级的两级电路结构,提高了电路的功率增益。对负载回路进行优化设计,改善了漏极电压与电流波形交叠的问题,进而提升了效率,同时降低了漏极电压的峰值,缓解了晶体管的击穿压力。仿真结果表明,电源电压为2.5 V时,该放大器的输出功率为21.2 dBm,功率附加效率为53.1%。     

基于新型输出结构的宽带高效率功率放大器

提出一种具有新型匹配网络的宽带高效率功率放大器,以及利用开路扇形微带线构成的紧凑型输出匹配网络,并给出了阻抗推导过程。该输出匹配网络在一定带宽条件下能满足晶体管的高效率所对应的阻抗设计空间要求。为了进一步拓展带宽,采用阶跃式阻抗匹配方法设计输入匹配网络。通过理论分析与仿真,最后设计并制作了一款频段为1~3.1 GHz的宽带高效率J类功率放大器。测试结果表明,在该频段内漏极效率为61.4%~70.2%,输出功率为39.3~41.7 dBm,增益为9.3~11.7 dB。     

基于滤波匹配网络的连续逆F类功率放大器

为了满足功率放大器对高效率和宽带的要求,介绍了一种连续逆F类功率放大器设计方法。在分析连续逆F类模式的基波和谐波阻抗基础上,提出了一种阶跃阻抗匹配网络电路。为了验证方法的有效性,设计并实现了一个1.7~2.9 GHz宽带的连续逆F类功率放大器。测试结果表明,在工作带宽内,增益波动小于2 dB,饱和功率大于40.5 dBm,峰值效率为65%~76%。该方法为宽带高效率放大器设计提供了有益的参考。     

F类与逆F类功率放大器的效率研究

为了对F类与逆F类功率放大器的效率进行研究,首先从理论方面对两种放大器工作模式各自的效率进行了计算。通过计算可以看出,在相同的输出功率下,因为晶体管导通内阻的存在,逆F类功率放大器的效率优于F类功率放大器。再通过软件仿真设计F类和逆F类功率放大器,在相同的输出功率下,逆F类功率放大器的最高漏极效率为91.8%,F类功率...     

一种S波段E类GaN HEMT功率放大器设计

并联电路E类功率放大器(PA)具有结构简单和高效的优点,因而被广泛应用。针对并联电路E类PA存在带宽较窄、效率较低的问题,对其输出匹配网络提出了一种改进方案。采用混合式π型结构作为PA的输出匹配网络,在较宽的工作带宽内完成了最佳阻抗与标准阻抗的转换,有效地抑制了二次谐波分量,提高了电路的效率。为了验证所提出理论的有效性,基于0.25 μm GaN HEMT工艺设计了一种结构简单、高效率和高功率的单片集成E类功率放大器。版图后仿真结果表明,在2.5～3.7 GHz工作频率范围内,输出功率大于40 dBm,功率附加效率为51.8%～63.1%。版图尺寸为2.4 mm×2.9 mm。     

Broadband circularly polarised high efficiency active antenna

A broadband circularly polarised (CP) high efficiency active antenna is presented, where the antenna is integrated directly with a high efficiency class-E power amplifier (PA). The printed antenna is employed not only as a broadband CP radiator but also as a harmonics-termination load network for the class-E PA. Measured results demonstrate broadband CP radiation and high efficiency.     

A common-gate switched 0.9-W class-E power amplifier with 41% PAEin 0.25-μm CMOS

A power amplifier for wireless applications has been implemented in a standard 0.25-μm CMOS technology. The power amplifier employs class-E topology to exploit its soft-switching property for high efficiency. The finite dc-feed inductance in the class-E load network allows the load resistance to be larger for the same output power and supply voltage than that for an RF choke. The common-gate switching scheme increases the maximum allowable supply voltage by almost twice from the value for a simple switching scheme. By employing these design techniques, the power amplifier can deliver 0.9-W output power to 50-Ω load at 900 MHz with 41% power-added efficiency (PAE) from a 1.8-V supply without stressing the active devices     

Performance Study of a Class-E Power Amplifier With Tuned Series-Parallel Resonance Network

This paper reports on a modified class-E amplifier with a tuned series-parallel resonance network. This configuration introduces two additional resonance frequencies. The design equations required to determine the optimum operations are analyzed in detail by introducing three additional boundary conditions. compared to the conventional class-E amplifier, the numerical results show that the improvements on load resistance, maximum transistor current, power output capability, and maximum frequency can be obtained by properly selecting the resonance frequencies of the tuned network. Comparisons between simulations and measurements of an experimental circuit of the new configuration are drawn to validate the feasibility. The drain efficiency of 81.77%, power-added efficiency of 79.58%, and output power of 32.71 dBm (1.866 W) at 250 MHz are measured.     

A planar 4.5-GHz DC-DC power converter

In this paper, we present two DC-DC converters that operate at a microwave frequency. The first converter consists of a class-E switched-mode microwave amplifier, which performs the DC-AC conversion, and two half-wave diode rectifier outputs. The class-E MESFET amplifier has a minimum power-added efficiency of 86%, corresponding drain efficiency of 95%, and 120 mW of output power at 4.5 GHz. The diode rectifier has a maximum conversion efficiency of 98% and an overall efficiency of 83%. The second converter consists of a high-efficiency class-E oscillator and a diode rectifier. The class-E oscillator has a maximum efficiency of 57% and maximum output power of 725 mW. The DC-DC converter is planar and compact, with no magnetic components, and with a maximum overall DC-DC conversion efficiency of 64% for a DC input of 3 V, and the output voltage across a 87-Ω load of 2.15 V     

LDMOS管并联电容提取及E类功率放大器设计

研制了2.14GHz频段横向扩散金属氧化物半导体(LDMOS)晶体管的高效率E类功率放大器。采用并联谐振法结合ADS软件仿真提取出管子的关键参数Cds,并在此基础上进行电路仿真,设计了馈电网络和负载匹配网络,有效抑制谐波分量。给出了功率放大器的实验结果,输出功率达到38.55dBm时,附加效率达到64.1%,与仿真结果吻合良好。     

Analysis and design of continuous class-E power amplifier at sub-nominal condition

The continuous class-E power amplifier at sub-nominal condition is proposed in this paper. The class-E power amplifier at continuous mode means it can be high efficient on a series matching networks while at sub-nominal condition means it only requires the zero-voltage-switching condition. Comparing with the classical class-E power amplifier, the proposed design method releases two additional design freedoms, which increase the class-E power amplifier’s design flexibility. Also, the proposed continuous class-E power amplifier at sub-nominal condition can perform high efficiency over a broad bandwidth. The performance study of the continuous class-E power amplifier at sub-nominal condition is derived and the design procedure is summarised. The normalised switch voltage and current waveforms are investigated. Furthermore, the influences of different sub-nominal conditions on the power losses of the switch-on resistor and the output power capability are also discussed. A broadband continuous class-E power amplifier based on a Gallium Nitride (GaN) transistor is designed and testified to verify the proposed design methodology. The measurement results show, it can deliver 10–15 W output power with 64–73% power-added efficiency over 1.4–2.8 GHz.     

Off-Nominal Operation of Class-E Amplifier at Any Duty Ratio

Design equations for satisfying the suboptimum operating condition, i.e., only the zero-voltage switching (ZVS) condition, of a class-E amplifier with a linear shunt capacitance at any duty ratio are derived. By exploiting the suboptimum class-E operation, various amplifier parameters such as operating frequency, output power, load resistance, and component values can vary, while the ZVS operation and high efficiency can be achieved. An example of a design procedure of the class-E amplifier is given. The theoretical results were verified with PSpice simulation and an experiment.     

Class-E/sub M/ switching-mode tuned power amplifier-high efficiency with slow-switching transistor

In class-E switching-mode power amplifiers, the switch-current waveform includes a step change ("jump"), approximated by a ramp of <15% of the period. At a transistor's highest useful frequency, the large input drive required for fast-enough switching yields marginal power gain. Objective: a high-efficiency power amplifier with jumpless current and voltage waveforms. Previously, that was proven impossible for amplifiers using only linear passive components and an ideal switch. We present the theory of a new topology that does achieve the objective: a class-E amplifier with nonlinear passive or active components in the load network. A "biharmonic" version was simulated, built, and tested. It comprises a main stage switching at the output frequency f/sub 1/, drawing DC power of approximately 3/4(P/sub OUT RF//drain efficiency), and an auxiliary amplifier switching at 2f/sub 1/, injecting 2f/sub 1/-current into the circuit node at the main-stage transistor's output port to shape jumpless voltage and current waveforms. That switching (nonlinear) output port converts 2f/sub 1/ power from the auxiliary amplifier to approximately 1/4 of the f/sub 1/ power at the load. Computer simulation, and measurement on a scaled-frequency 3.5-MHz prototype, show that switching losses practically disappear when the main-stage switch is operated in the jumpless regime.     

Class-E, Class-C, and Class-F power amplifiers based upon a finitenumber of harmonics

Class-E operation at UHF and microwave frequencies is achieved by using transmission-line networks to provide the drain harmonic impedances of an ideal class-E power amplifier (PA). This paper develops a technique for analysis of such amplifiers that are based upon a finite number of harmonics. The technique is generally applicable to classes E, C, and F as well as PAs with harmonic reactances not corresponding to those of established classes. The analysis shows that the maximum achievable efficiency depends not upon the class of operation, but upon the number of harmonics employed. For any set of harmonic reactances, the same maximum efficiency can be achieved by proper adjustment of the waveforms and the fundamental-frequency load reactance. The power-output capability depends upon the harmonic reactances and is maximum for class F     

Tuning analysis for the high-Q class-E power amplifier

The effects of component variations on a high-Q class-E amplifier are simulated and measured. Design equations are provided for the case of a 50% duty cycle with B at its optimum value for a given R. Six distinct operating points are analyzed for the output network. The problem of tuning a high-Q class-E amplifier is addressed. Normally, it cannot be tuned for maximum output power without degrading efficiency. An auxiliary circuit is added to the design so that it can be tuned for maximum output power in order to achieve optimum efficiency. Measured data are obtained at low frequencies for an amplifier with a loaded Q of 340