A low-spurious fast-hopping MB-OFDM UWB synthesizer

A frequency synthesizer for the ultra-wide band(UWB)group # 1 is proposed.The synthesizer uses a phase locked loop(PLL)and single-sideband(SSB)mixers to generate the three center frequencies of the first band group by mixing 4224 MHz with ±264 MHz and 792 MHz,respectively.A novel multi-QSSB mixer is designed to combine the function of frequency selection and frequency conversion for low power and high linearity.The synthesizer is fabricated in Jazz 0.18-μm RF CMOS technology.The measured reference spur is as low as-69 dBc and the maximum spur is the LO leakage of-32 dBc.A low phase noise of-110 dBc/Hz @ 1 MHz offset and an integrated phase noise of 1.86°are achieved.The hopping time between different bands is less than 1.8 ns.The synthesizer consumes 30 mA from a1.8 V supply.     

A fast-settling frequency-presetting PLL frequency synthesizer with process variation compensation and spur reduction

This paper proposes a fast-settling frequency-presetting PLL frequency synthesizer.A mixed-signal VCO and a digital processor are developed to accurately preset the frequency of VCO and greatly reduce the settling time.An auxiliary tuning loop is introduced in order to reduce reference spur caused by leakage current.The digital processor can automatically compensate presetting frequency variation with process and temperature,and control the operation of the auxiliary tuning loop.A 1.2 GHz integer-N synthesizer with 1 MHz reference input Was implemented in a 0.18μm process.The measured results demonstrate that the typical settling time of the synthesizer is less than 3μs,and the phase noise is-108 dBc/Hz@1MHz.The reference spur is-52 dBc.     

基于0.35μm SiGe BiCMOS的高纯度频率综合器

介绍了一个基于0.35μm SiGe BiCMOS的整数N频率综合器.通过采用不同工艺来实现不同模块,实现了一个具有良好的杂散和相噪性能的高纯度频率综合器.除环路滤波器外所有的部件均采用差分电路结构.为了进一步减小相位噪声,压控振荡器中采用绑定线来形成谐振.该频率综合器可在2.39～2.72 GHz的频率范围内输出功率OdBm.在100kHz频偏处测得的相位噪声为-95dBc/Hz,在1MHz频偏处测得的相位噪声为-116dBc/Hz.参考频率处杂散小于-72dBc.在3V 的工作电压下,包括输出驱动级在内的整个芯片消耗60mA电流.     

A CMOS monolithic ΔΣ-controlled fractional-N frequencysynthesizer for DCS-1800

A monolithic 1.8-GHz ΔΣ-controlled fractional-N phase-locked loop (PLL) frequency synthesizer is implemented in a standard 0.25-μm CMOS technology. The monolithic fourth-order type-II PLL integrates the digital synthesizer part together with a fully integrated LC VCO, a high-speed prescaler, and a 35-kHz dual-path loop filter on a die of only 2×2 mm². To investigate the influence of the ΔΣ modulator on the synthesizer's spectral purity, a fast nonlinear analysis method is developed and experimentally verified. Nonlinear mixing in the phase-frequency detector (PFD) is identified as the main source of spectral pollution in ΔΣ fractional-N synthesizers. The design of the zero-dead zone PFD and the dual charge pump is optimized toward linearity and spurious suppression. The frequency synthesizer consumes 35 mA from a single 2-V power supply. The measured phase noise is as low as -120 dBc/Hz at 600 kHz and -139 dBc/Hz at 3 MHz. The measured fractional spur level is less than -100 dBc, even for fractional frequencies close to integer multiples of the reference frequency, thereby satisfying the DCS-1800 spectral purity constraints     

A 0.8-V 4.9-mW 1.2-GHz CMOS Fractional-N Frequency Synthesizer for UHF RFID Readers

A fully integrated CMOS frequency synthesizer for UHF RFID reader is implemented in a 0.18-$mu$m CMOS technology. Due to the large self-interference and the backscatter scheme of the passive tags, reader synthesizer's phase noise requirement is stringent to minimize the sensitivity degradation of the reader RX. The modified transformer feedback voltage-controlled oscillator (VCO) exhibits enhanced tank impedance and even harmonic noise filtering to achieve low phase noise. A third-order 2-bit single-loop $Sigma Delta$ modulator is optimized for the proposed synthesizer in terms of phase noise and power. The synthesizer provides a frequency resolution of 25-kHz with a tuning range from 1.03 GHz to 1.4 GHz . Phase noise of ${-}$70 dBc/Hz inband, ${-}$104 dBc/Hz at 200-kHz offset and ${-}$ 121 dBc/Hz at 1-MHz offset with a reference spur of ${-}$84 dBc are measured at a center frequency of 1.17 GHz and a loop bandwidth of 35 kHz. Power dissipation is 4.92 mW from a 0.8 V supply.      

A /spl Sigma/-/spl Delta/ fractional-N frequency synthesizer using a wide-band integrated VCO and a fast AFC technique for GSM/GPRS/WCDMA applications

A fractional-N frequency synthesizer (FNFS) in a 0.5-/spl mu/m SiGe BiCMOS technology is implemented. In order to operate in a wide-band frequency range, a switched-capacitors bank LC tank voltage-controlled oscillator (VCO) and an adaptive frequency calibration (AFC) technique are used. The measured VCO tuning range is as wide as 600 MHz (40%) from 1.15 to 1.75 GHz with a tuning sensitivity from 5.2 to 17.5 MHz/V. A 3-bit fourth-order /spl Sigma/-/spl Delta/ modulator is used to reduce out-of-band phase noise and to meet a frequency resolution of less than 3 Hz as well as agile switching time. The experimental results show -80 dBc/Hz in-band phase noise within the loop bandwidth of 25 kHz and -129 dBc/Hz out-of-band phase noise at 400-kHz offset frequency. The fractional spurious is less than -70 dBc/Hz at 300-kHz offset frequency and the reference spur is -75 dBc/Hz. The lock time is less than 150 /spl mu/s. The proposed synthesizer consumes 19.5 mA from a single 2.8-V supply voltage and meets the requirements of GSM/GPRS/WCDMA applications.     

X波段低相噪合成频率源设计

利用阶跃恢复二极管的强非线性特征和50MHz参考源,设计出一种高效率微波梳状发生器基准信号源,并通过此信号源采用谐波双混频合成法研制出低相噪、高杂散抑制的X波段跳频频率源。主要性能参数实测结果为:输出频率7.6～8.5GHz,频率跳频间隔50MHz,相位相噪≤-105dBc/Hz/1kHz、杂散抑制≤-60dBc。     

A CMOS broadband frequency synthesizer for DVB-C receiver

A 70∼900 MHz broadband PLL frequency synthesizer is developed for the single conversion DVB-C receiver in a standard 0.25 μm CMOS technology. The true 3-band VCO with a novel AAC (Auto-Amplitude Control) circuit provides a wideband amplitude stable output and a reliable startup without degrading the phase noise performance. A 16/17 dual-modulus prescaler with a new logic structure has increased the speed. The charge pump current is programmable for wide loop stabilization and phase noise optimization. The measured results show that the locked range of the frequency synthesizer is 70∼900 MHz. The worst phase noise at 1 k/10 k/100 k/1 MHz offset frequency is ordinal −65/−85/−112/−128 dBc/Hz and the spur at reference frequency is lower than −90 dBc.The frequency synthesizer chip dissipates only 16.2 mA from a 3.3 V supply.     

A dual-band frequency synthesizer for CMMB application with low phase noise

A wide-band frequency synthesizer with low phase noise is presented.The frequency tuning range is from 474 to 858 MHz which is compatible with U-band CMMB application while the S-band frequency is also included. Three VCOs with selectable sub-band are integrated on chip to cover the target frequency range.This PLL is fabricated with 0.35μm SiGe BiCMOS technology.The measured result shows that the RMS phase error is less than 1°and the reference spur is less than -60 dBc.The proposed PLL consumes 20 mA cu...     

全集成低噪声CMOS宽带分数分频频率综合器

设计了一款应用于CMMB数字电视广播接收的全集成低噪声宽带频率综合器。采用三阶ΣΔ调制器小数分频器完成高精度的频率输出,使用仅一个低相位噪声的宽带VCO输出频率范围覆盖900~1 600 MHz,产生的本振信号覆盖UHF的数字电视频段(470~790 MHz)。设计中的频率综合器能在所有的频道下保证环路的稳定以及最小的环路性能偏差。测试结果表明,整个频率综合器的带内相位噪声小于-85 dBc/Hz,并且带外相位噪声在1MHz时均小于-121 dBc/Hz,总的频率综合器锁定时间小于300μs。设计在UMC 0.18μm RFCMOS工艺下实现,芯片面积小于0.6 mm2,在1.8 V电源电压的测试条件下,总功耗小于22 mW。     

一种用于短距离器件的带自校准的∑-Δ分数分频频率综合器

介绍了一种应用于433/868MHz频段短距离器件的分数分频频率综合器.采用带自适应频率校准的宽带压控振荡器来覆盖要求的频段,并采用3位量化、3阶的Σ△调制器来实现分数分频和改善锁相环的带外噪声.测试结果表明,自适应频率校准能够正常工作,压控振荡器的频率调节范围为1.31～1.18GHz,在3MHz频偏处的带外噪声为-139dBc/Hz,分数毛刺低于-60dBc.芯片采用0.35μm CMOS工艺,芯片面积仅为1.8mm2,功耗仅为57mW.     

A technique to improve the linearization of frequency–voltage characteristic of LC-VCO

This paper presents a very low-power linearization technique to improve the linearity of frequency-voltage characteristic of LC-VCO (voltage controlled oscillator) using MOS varactor. This reduces the VCO gain (K _VCO) variation and its required value over the tuning voltage range. Low K _VCO improves noise and reference spur performances at the output of phase lock loop/frequency synthesizer (FS). Low K _VCO variation reduces FS loop stability problem. Using this VCO circuit, a fully on-chip integer-N frequency synthesizer has been fabricated in 0.18 μm epi-digital CMOS technology for 2.45 GHz ZigBee application. The measured VCO phase noise is ?115.76 and ?125.23 dBc/Hz at 1 and 3 MHz offset frequencies, respectively from 2.445 GHz carrier and the reference spur of the frequency synthesizer is ?68.62 dBc. The used supply voltage is 1.5 V.     

Ku波段低相噪频率源的研制

阐述了Ku波段低相噪锁相频率源的研制过程。在低输入参考频率10 MHz的情况下,输出高达11.8 GHz的点频信号,倍频恶化达到61 dB,如何实现从10 Hz~1 MHz频偏范围内各点的相位噪声指标要求是需要攻克的技术难题。具有超低相噪基底的模拟鉴频鉴相器件HMC440的应用为该项目的成功研制奠定了坚实的基础。     

A 2.5-GHz DDFS-PLL With 1.8-MHz Bandwidth in 0.35-$mu$m CMOS

A wideband frequency synthesizer architecture is presented. The proposed topology employs a direct digital frequency synthesizer (DDFS) to control the output frequency of an offset-PLL. In this way, the synthesizer features a very fine frequency resolution, 24 Hz, as in delta-sigma fractional-N PLLs, but without being affected by the quantization-induced phase noise. This, in turn, allows enlarging the loop bandwidth. The frequency synthesizer is designed to be employed as a direct modulator for Bluetooth transmitter in a low-cost 0.35-mum CMOS technology. At 2.5GHz it achieves 1.8-MHz bandwidth, while the settling time within 30ppm for an 80-MHz step is 3 mus. The integrated phase noise gives less than 1 degree of rms phase error and the worst-case spur is 48dBc at 1 MHz, well below the specifications. Power dissipation is 120 mW for the PLL core, 50 mW for the DDFS plus DACs, and 19 mW for the GFSK modulator.     

A 1-V 5.2-GHz CMOS synthesizer for WLAN applications

A 1-V CMOS frequency synthesizer designed for WLAN 802.11a is presented. Novel circuit designs are demonstrated in the system for low-voltage applications including design of voltage-controlled oscillator and design of programmable divider. Implemented in a 0.18-/spl mu/m CMOS process and operated at 1-V supply voltage, the synthesizer measures phase noise of -136 dBc/Hz at a frequency offset of 20 MHz and spur performance of less than -80 dBc at an offset of 11 MHz. The synthesizer dissipates 27.5 mW from a single 1-V supply and occupies a chip area of 1.03 mm/sup 2/.     

A 700-kHz bandwidth /spl Sigma//spl Delta/ fractional synthesizer with spurs compensation and linearization techniques for WCDMA applications

A /spl Sigma//spl Delta/ fractional-N frequency synthesizer targeting WCDMA receiver specifications is presented. Through spurs compensation and linearization techniques, the PLL bandwidth is significantly extended with only a slight increase in the integrated phase noise. In a 0.18-/spl mu/m standard digital CMOS technology a fully integrated prototype with 2.1-GHz output frequency and 35 Hz resolution has an area of 3.4 mm/sup 2/ PADs included, and it consumes 28 mW. With a 3-dB closed-loop bandwidth of 700 kHz, the settling time is only 7 /spl mu/s. The integrated phase noise plus spurs is -45 dBc for the first WCDMA channel (1 kHz to 1.94 MHz) and -65 dBc for the second channel (2.5 to 6.34 MHz) with a worst case in-band (unfiltered) fractional spur of -60 dBc. Given the extremely large bandwidth, the synthesizer could be used also for TX direct modulation over a broad band. The choice of such a large bandwidth, however, still limits the spur performance. A slightly smaller bandwidth would fulfill WCDMA requirements. This has been shown in a second prototype, using the same architecture but employing an external loop filter and VCO for greater flexibility and ease of testing.     

Ka波段频率合成器设计

提出了一种Ka波段低杂散、捷变频频率合成器设计方案.该方案采用直接数字合成(DDS)+直接上变频的频率合成模式,DDS1产生360～600 MHz低杂散中频信号,DDS2产生波形信号.经过4次上变频、分段滤波、放大后,该方案实现了宽带、低杂散、捷变频频率合成器的设计,为系统提供本振信号、激励信号等.根据设计方案,制作了...     

一种超低相噪参考源的设计与实现

本文设计并实现了超低相位噪声参考源.分析了锁相频率合成相位噪声的影响因素,提出了一种采用梳谱发生器合成宽带、大步进、超低噪声参考源的频率合成方案.实验测试结果:频率覆盖范围3~6GHz,频率步进75MHz,3.1125GHz时,10kHz频偏处的相位噪声约为-130dBc/Hz,具有较高的工程实用价值.     

A 35-mW 3.6-mm/sup 2/ fully integrated 0.18-/spl mu/m CMOS GPS radio

A single-chip CMOS Global Positioning System (GPS) radio has been integrated using only a couple of external passive components for the input matching network and one external reference for the synthesizer. The receiver downconverts the GPS L1 signal at 1575.42 MHz to an IF of 9.45 MHz. The complete front-end and frequency synthesizer section have been integrated: low noise amplifier, image rejection mixer, IF active filter, and the full phase-locked loop synthesizer, including voltage-controlled oscillator and loop filter. The front-end measured performances are 81-dB maximum gain, 5.3-dB noise figure, and >30-dB image rejection. The synthesizer features a phase noise of -95 dBc/Hz at 1-MHz offset and a total integrated phase noise of less than 7/spl deg/ rms in the 500-Hz-1.5-MHz band. The front-end and the synthesizer draw, respectively, 11 and 9 mA from a 1.8-V supply. The architecture of the front-end and synthesizer has been geared to high level of integration and reduction of silicon area at the lowest possible power consumption. Consequently, the one reported here is the smallest and most integrated CMOS GPS receiver reported so far.     

Design and noise analysis of a fully-differential charge pump for phase-locked loops

A fully-differential charge pump (FDCP) with perfect current matching and low output current noise is realized for phase-locked loops (PLLs). An easily stable common-mode feedback (CMFB) circuit which can handle high input voltage swing is proposed. Current mismatch and current noise contribution from the CMFB circuit is minimized. In order to optimize PLL phase noise, the output current noise of the FDCP is analyzed in detail and calculated with the sampling principle. The calculation result agrees well with the simulation. Based on the noise analysis, many methods to lower output current noise of the FDCP are discussed. The fully-differential charge pump is integrated into a 1-2 GHz frequency synthesizer and fabricated in an SMIC CMOS 0.18 μm process. The measured output reference spur is -64 dBc to -69 dBc. The in-band and out-band phase noise is -95 dBc/Hz at 3 kHz frequency offset and -123 dBc/Hz at 1 MHz frequency offset respectively.