Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films

Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray. The thin films were deposited at three different substrate temperatures of 300, 350 and 400 ℃. The obtained films had a hexagonal wurtzite structure with a strong (002) preferred orientation. The maximum crystallite size value of the film deposited at 350 ℃ is 55.46 nm. Spectrophotometer (UV-vis) of a Co doped ZnO film deposited at 350 ℃ shows an average transmittance of about 90%. The band gap energy increased from 3.351 to 3.362 eV when the substrate temperature increased from 300 to 350 ℃. The electrical conductivity of the films deposited at 300, 350 and 400 ℃ were 7.424, 7.547 and 6.743 (Ω·cm)^-1 respectively. The maximum activation energy value of the films at 350 ℃ was 1.28 eV, indicating that the films exhibit a n-type semiconducting nature.     

Effect of Co doping on structural, optical, electrical and thermal properties of nanostructured ZnO thin films

Nanocrystalline Zn1-x CoxO(where x varies from 0 to 0.04 in steps of 0.01) thin films were deposited onto glass substrate by the spray pyrolysis technique at a substrate temperature of 350 ℃. The X-ray diffraction patterns confirm the formation of hexagonal wurtzite structure. The crystal grain size of these films was found to be in the range of 11–36 nm. The scanning electron micrographs show a highly crystalline nanostructure with different morphologies including rope-like morphology for undoped ZnO and nanowalls and semispherical morphology for Co-doped Zn O. The transmittance increases with increasing Co doping. The optical absorption edge is observed in the transmittance spectra from 530 to 692 nm, which is due to the Co2C absorption bands corresponding to intraionic d–d shifts. The direct and indirect optical band gap energies decrease from 3.05 to 2.75 eV and 3.18 to 3.00 eV, respectively for 4 mol% Co doping. The electrical conductivity increases with increasing both the Co doping and temperature, indicating the semiconducting nature of these films. The temperature dependence thermal electromotive force measurement indicates that both undoped and Co-doped ZnO thin films show p-type semiconducting behavior near room temperature. This behavior dies out beyond 313 K and they become n-type semiconductors.     

Photoelectric properties of ITO thin films deposited by DC magnetron sputtering

As anti-reflecting thin films and transparent electrodes of solar cells,indium tin oxide（ITO） thin films were prepared on glass substrates by DC magnetron sputtering process.The main sputtering conditions were sputtering power,substrate temperature and work pressure.The influence of the above sputtering conditions on the transmittance and conductivity of the deposited ITO films was investigated.The experimental results show that, the transmittance and the resistivity decrease as the sputtering power increases from 30 to 90 W.When the substrate temperature increases from 25 to 150℃,the transmittance increases slightly whereas the resistivity decreases.As the work pressure increases from 0.4 to 2.0 Pa,the transmittance decreases and the resistivity increases.When the sputtering power,substrate temperature and work pressure are 30 W,150℃,0.4 Pa respectively,the ITO thin films exhibit good electrical and optical properties,with resistivity below 10^-4Ω·cm and the transmittance in the visible wave band beyond 80%.Therefore,the ITO thin films are suitable as transparent electrodes of solar cells.     

Investigation the structural, optical and electrical properties of Zinc oxide (ZnO) thin films deposited by spray pyrolysis techniqueYacine Aoun 1, Boubaker Benhaoua 2,Said Benramache 3,*

Zinc oxide (ZnO) thin films were deposited on glass substrates by spray pyrolysis technique decomposition of zinc acetate dihydrate in an ethanol solution with 30 mL of deposition rate, the ZnO thin films were deposited at two different temperatures: 300 and 350 ℃. The substrates were heated using the solar cells method. The substrate was R217102 glass, whose size was 30 × 17.5 × 1 mm³. The films exhibit a hexagonal wurtzite structure with a strong (002) preferred orientation. The higher value of crystallite size is attained for sprayed films at 350 ℃, which is probably due to an improvement of the crystallinity of the films at this point. The average trans mittance of obtain films is about 90%-95%, as measured by a UV-vis analyzer. The band gap energy varies from 3.265 to 3.294 eV for the deposited ZnO thin film at 300 and 350 ℃, respectively. The electrical resistivity measured of our films are in the order 0.36 Ω·cm.     

Influence of the distance between target and substrate on the properties of transparent conducting AI-Zr co-doped zinc oxide thin films

Highly transparent and conducting Al-Zr co-doped zinc oxide （ZAZO） thin films were successfully prepared on glass substrate by direct current （DC） magnetron sputtering at room temperature. The distance between target and substrate was varied from 45 to 70 mm. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 70 to 50 mm. However, as the distance decreases further, the crystallinity decreases and the electrical resistivity increases. When the distance between target and substrate is 50 ram, it is found that the lowest resistivity is 6.9 × 10^-4Ω cm. All the deposited films show a high average transmittance of above 92% in the visible range.     

衬底温度对In掺杂CdO薄膜的结构和性能的影响

Transparent indium-doped cadmium oxide（In-CdO） thin films were deposited on quartz glass substrates by pulsed laser deposition（PLD） from an ablating Cd-In metallic target.The effect of substrate temperature on the structural,optical and electrical properties of In-doped CdO thin films were studied in detail.The optical transmittance of In doped CdO films are obviously influenced by the substrate temperature.All films exhibit a transmittance higher than 75%in the visible region.More significantly,In-doping leads to an evident widening of optical band gap from 2.56 to 2.91 eV;and the increase in optical band gap is found to depend on the deposition temperature.It is also seen that the electrical properties of these films strongly depend on the substrate temperature. The In-CdO thin film grown at 300℃has low resistivity(1.15×10^-4Ω·cm),high carrier concentration(5.35×10²⁰ cm^-3),and high mobility（101.43 cm²/（V·s））.     

Microstructures and electrical properties of SrRuO3 thin films on LaAIO3 substrates

Conductive SrRuO₃ thin films have been deposited using pulsed laser deposition on LaA10₃ substrates at different substrate temperatures. Structural and microstructural properties of the SrRuO₃/LaAlO₃ system have been studied using x-ray diffraction, scanning electron microscopy, and scanning tunneling microscopy. Electrical properties of SrRuO₃ thin films have been measured. It was found that the film deposited at 250°C is amorphous, showing semiconductor-like temperature dependence of electrical conductivity. The film deposited at 425°C is crystalline with very fine grain size (100∼200?), showing both metallic and semiconductor-like temperature dependence of electrical conductivity in different temperature regions. The film deposited at 775°C shows a resistivity of 280 μΩ.cm at room temperature and a residual resistivity ratio of 8.4. Optimized deposition conditions to grow SrRuO₃ thin films on LaA10₃ substrates have been found. Possible engineering applications of SrRuO₃ thin films deposited at different temperatures are discussed. Bulk and surface electronic structures of SrRuO₃ are calculated using a semi-empirical valence electron linear combination of atomic orbitals approach. The theoretical calculation results are employed to understand the electrical properties of SrRuO₃ thin films.     

衬底温度对磁控溅射法制备的ZnO:In薄膜光电性能的影响

以粉末靶为溅射源,采用射频磁控溅射法在玻璃衬底上制备掺铟氧化锌(ZnO:In)透明导电膜.利用X射线衍射仪、原子力显微镜、霍尔测试仪,以及分光光度计等对不同衬底温度下生长的ZnO:In薄膜的结构、光电性能进行表征.结果表明,所有制备的ZnO:In薄膜均为六角纤锌矿结构的多晶膜,具有(002)择优取向.ZnO:In薄膜的电阻率随着衬底温度的升高先减小后增大,当衬底温度为100℃时,薄膜的最低电阻率为3.18×10~(-3)Ω·cm.制备的薄膜可见光范围内透过率均在85%以上.

Abstract：

Indium doped zinc oxide (ZnO : In) films were deposited on glass substrates by RF magnetron sputtering method using a powder target.The influence of the substrate temperature on the structure,optical and electrical properties was investigated by X-ray diffraction (XRD),atom force microscope (AFM),Hall measurement and optical transmission spectroscopy.The results show all the obtained films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the (002) direction,and the grain size is about 22～29 nm.The conductivity of the ZnO : In films change with the substrate temperature,and the lowest electrical resistivity is about 3.18 × 10~3 Ω·cm for the samples deposited at substrate temperature 100 ℃.The transmittance of our films in the visible range is all higher than 85%.     

Structural and optical properties of polycrystalline CdS thin films deposited by electron beam evaporation

Highly crystalline and transparent cadmium sulphide(CdS) films were deposited on glass substrate by electron beam evaporation technique.The structural and optical properties of the films were investigated.The X-ray diffraction analysis revealed that the CdS films have a hexagonal structure and exhibit preferred orientation along the(002) plane.Meanwhile,the crystalline quality of samples increased first and then decreased as the substrate temperature improved,which is attributed to the variation in film thickness.UV-vis spectra of CdS films indicate that the absorption edge becomes steeper and the band gap present fluctuation changes in the range of 2.389-2.448 eV as the substrate temperature increased.The photoluminescence peak of the CdS films was found to be broadened seriously and there only emerges a red emission band at 1.60 eV.The above results were analyzed and discussed.     

Influence of growth time on crystalline structure,conductivity and optical properties of ZnO thin films

This paper examines the growth of ZnO thin films on glass substrate at 350℃using an ultrasonic spray technique.We have investigated the influence of growth time ranging from 1 to 4 min on structural,optical and electrical properties of ZnO thin films.The as-grown films exhibit a hexagonal structure wurtzite and are(002) oriented.The maximum value of grain size G = 63.99 nm is attained for ZnO films grown at 2 min.The average transmittance is about 80%,thus the films are transparent in the visible region.The optical gap energy is found to increase from 3.26 to 3.37 eV with growth time increased from 1 to 2 min.The minimum value of electrical resistivity of the films is 0.13Ω·cm obtained at 2 min.A systematic study on the influence of growth time on the properties of ZnO thin films deposited by ultrasonic spray at 350℃has been reported.     

Indium doped zinc oxide thin films deposited by ultrasonic spray pyrolysis technique: Effect of the substrate temperature on the physical properties

Indium doped zinc oxide (ZnO:In) thin solid films were deposited on soda-lime glass substrates by the ultrasonic spray pyrolysis technique. The effect of the substrate temperature on the electrical, morphology, and optical characteristics of ZnO:In thin films was studied. It was found that, as the substrate temperature increases, the electrical resistivity decreases, reaching a minimum value in the order of 7.3×10⁻³ Ω cm, at 415 °C. Further increase in the substrate temperature results on an increment on the electrical resistivity of the thin solid films. All the samples were polycrystalline with a well-defined wurtzite structure. The preferred growth shows a switching from a random orientation at low substrates temperatures to (0 0 2) in the case of films deposited at the highest substrate temperature used. As the substrate temperature increases, the corresponding surface morphology changes from an almost faceted pyramidal to round-shaped form. The optical transmittance of the films in a interval of 400 to 700 nm is around 70%, with a band gap value in the order of 3.45 eV.     

Impact of substrate temperature on the structural,optical and electrical properties of thermally evaporated SnS thin films

Tin Sulfide thin films were deposited on soda lime glass substrates at three different substrate temperatures using thermal evaporation technique. The impact of substrate temperature on the deposited films has been studied thoroughly. Surface morphology was modified with the substrate temperature. XRD spectra shows orthorhombic end-centered type SnS having (1 1 0) orientation. The crystallite size increases with the increase in the substrate temperature. At a high substrate temperature (450 °C) small grains form on the surface and crystallinity decreases. The effect of substrate temperature on optical and electrical properties has been studied using UV–Vis–NIR Spectrophotometer and Hall effect respectively. With the increase in the substrate temperature there is a substantial decrease in the transmittance and bandgap value. Refractive index (n), dielectric constant (ε₁) and extinction co-efficient (k) have also been calculated for different substrate temperatures.     

衬底温度对PLD法制备的ZnO:Ga薄膜结构和性能的影响

利用脉冲激光沉积法在石英衬底上制备了镓掺杂氧化锌(ZnO:Ga)透明导电薄膜,研究了衬底温度对薄膜的结构、表面形貌和光电性能的影响.研究表明:制备的ZnO:Ga薄膜是具有六角纤锌矿结构的多晶薄膜.随着衬底温度的增加,衍射峰明显增强,晶粒尺寸增大.当衬底温度为450℃时,薄膜的最低电阻率为8.5×10<'-4>Ω·cm,...     

电子束沉积技术生长WZO-TCO薄膜及其特性研究

采用电子束沉积技术生长w掺ZnO（WZO,ZnO：w）透明导电氧化物（TCO）薄膜（即WZO-TCO薄膜）并研究了衬底温度（100-350℃）对薄膜微观结构、表面形貌以及光电性能的影响。实验表明,随着衬底温度的升高,薄膜的晶体质量取得明显改善（从非晶化状态转变到结晶状态）,生长的WZO薄膜呈现C轴择优取向[即（002）...     

Influence of the distance between target and substrate on the properties of transparent conducting Al-Zr co-doped zinc oxide thin films

Highly transparent and conducting AI-Zr co-doped zinc oxide (ZAZO) thin films were successfully prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. The distance between target and substrate was varied from 45 to 70 mm. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 70 to 50 mm. However, as the distance decreases further, the crystallinity decreases and the electrical resistivity increases. When the distance between target and substrate is 50 mm, it is found that the lowest resistivity is 6.9×10~(-4) Ω·cm.All the deposited films show a high average transmittance of above 92% in the visible range.     

PLD法制备ZnO薄膜的退火特性和蓝光机制研究

通过脉冲激光沉积(PLD)方法,在O2中和100～500℃衬底温度下,用粉末靶在Si(111)衬底上制备了ZnO薄膜,在300℃温度下生长的薄膜在400～800℃温度和N2氛围中进行了退火处理,用X射线衍射(XRD)谱、原子力显微镜(AFM)和光致发光(PL)谱表征薄膜的结构和光学特性。XRD谱显示,在生长温度300℃时获得较好的复晶薄膜,在退火温度700℃时获得最好的六方结构的结晶薄膜;AFM显示,在此退火条件下,薄膜表面平整、晶粒均匀;PL谱结果显示,在700℃退火时有最好的光学特性。     

溅射功率对NiO薄膜性质的影响

在室温条件下,采用射频磁控溅射的方法在石英衬底上制备了NiO薄膜,深入研究了不同溅射功率对NiO的结构、光学和电学特性的影响。随着溅射功率的升高,NiO薄膜逐渐由非晶态薄膜转变成具有(111)择优取向的晶态薄膜,同时发现NiO薄膜在可见光区透过率较大,而在紫外光区透过率减小;随着溅射功率的升高,薄膜在可见光区域和紫外区域的光学透过率均明显减小,同时禁带宽度也减小,但导电性增强。     

Low-temperature deposition of transparent conducting Mn-W co-doped ZnO thin films

Mn-W co-doped ZnO(ZMWO) thin films with low resistivity and high transparency were successfully prepared on glass substrate by direct current(DC) magnetron sputtering at low temperature.The sputtering power was varied from 65 to 150 W.The crystallinity and resistivity of ZMWO films greatly depend on sputtering power while the optical transmittance and optical band gap are not sensitive to sputtering power.All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientat...     

PLD法生长Al_2O_3基ZnO薄膜的特性

在不同衬底温度下,用脉冲激光沉积法(PLD),在Al2O3(0001)平面上生长了ZnO薄膜。研究了衬底温度对其结晶质量、电学性质以及发光性质的影响。结果显示:XRD在2θ为34°处出现了唯一的ZnO(0002)衍射峰;ZnO薄膜的电阻率随衬底温度的升高而增大;在衬底温度为500℃时,出现了位于410nm附近的特殊的光致发光(PL)峰。     

Structural,Optical and Electrical Properties of Polycrystalline CuO Thin Films Prepared by Magnetron Sputtering

Cupric oxide thin films were deposited on silicon and sapphire substrates by reactive radio frequency magnetron sputtering at different substrate temperatures. The results showed that the CuO films were composed of different sizes of CuO nano-grains and the CuO films deposited on Si substrates showed a more dense and uniform surface than that deposited on Al₂O₃ substrates. It was noted that both the CuO films deposited on Si and Al₂O₃ substrates revealed only CuO related diffractions and the preferred orientation of the CuO films changed from (002) to (111) as the substrate temperature increased. Moreover, the carrier concentration was 1.141?×?10¹⁸ cm^?3 and the mobility was 0.401 cm²/v s at 450°C substrate temperature. The controllable electrical properties of the films can be achieved by the variation of crystal quality arising from the substrate temperature.