溅射制备不同厚度Pb(Zr0.52Ti0.48)O3薄膜结晶态的研究

研究了射频磁控溅射的Pb(Zr0.52Ti0.48)O3(PZT52/48)薄膜在退火晶化时,厚度对其结晶态及表面形貌的影响.首先利用Materials Studio软件对PZT分子进行了模拟,并模拟了X射线衍射(XRD)得到PZT的特征峰图;实验上,采用退火炉对不同厚度的PZT(52/48)薄膜进行了不同温度及时间的退火;接着采用XRD对各样片薄膜进行了结晶物相分析;采用FIB对部分样片薄膜表面形貌进行了观察.实验结果显示,薄膜的厚度及退火条件在一定程度上对其结晶态的影响是一致的;对于一定厚度的薄膜,合适且相同的退火(650 ℃)条件都可以使其形成单一的PZT(52/48)物相;二次退火对较厚薄膜结晶化有一定的作用,但随着溅射薄膜厚度的增加而累加了内应力,退火后形成有PZT(52/48)物相的较厚薄膜表面出现裂纹越明显.

Study on the Crystalline Properties of the Pb(Zr0.52Ti0.48)O3 Thin Films with Different Thickness by Sputtering

The influence of the thickness of Pb(Zr0.52Ti0.48)O3(PZT52/48) thin film on the crystallization and surface morphology during annealing crystallization was studied.First, the PZT molecular model was simulated by using the Materials Studio software, and the characteristic peak of PZT was obtained by X-ray diffraction;In the experiment, different temperatures and time annealing of PZT (52/48) thin films with different thickness were carried out by using annealing furnace;Then, crystalline phase of each sample was analyzed by XRD;The surface morphology of some samples was observed by FIB.The experimental results show that the impact of the thickness of the thin films and the annealing conditions on the crystalline state is consistent;For the thin films with certain thickness, the proper annealing conditions (650 ℃) can make it form a single PZT(52/48) phase;Secondary annealing has a certain effect on the crystallization of thick films, but the internal stress increases with the increase of the thickness of the sputtered film, the surface of the more thinck films that formed PZT (52/48) phase after the annealing show the more obvious cracks.