|
|||||
|
|
Thermoelastic stresses in SiC single crystals grown by the physical vapor transport method |
|
| Authors: | Zibing Zhang Jing Lu Qisheng Chen V Prasad |
| Affiliation: | (1) Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100080, China;(2) Department of Mechanical and Materials Engineering, Florida International University, 10555 W Flagler St., Miami, FL 33174, USA |
| Abstract: | A finite element-based thermoelastic anisotropic stress model for hexagonal silicon carbide polytype is developed for the calculation of thermal stresses in SiC crystals grown by the physical vapor transport method. The composite structure of the growing SiC crystal and graphite lid is considered in the model. The thermal expansion match between the crucible lid and SiC crystal is studied for the first time. The influence of thermal stress on the dislocation density and crystal quality is discussed. The project supported by the National Natural Science Foundation of China (10472126) and the Knowledge Innovation Program of Chinese Academy of Sciences. The English text was polished by Keren Wang |
| Keywords: | Silicon carbide Physical vapor transport Thermal stress Thermoelastic Thermal expansion match |
| 本文献已被 维普 SpringerLink 等数据库收录！ | |
