Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells |
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引用本文: | 杨晓红,韩勤,倪海桥,黄社松,杜云,彭红玲,熊永华,牛智川,吴荣汉.Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells[J].中国物理快报,2006,23(12):3376-3379. |
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作者姓名: | 杨晓红 韩勤 倪海桥 黄社松 杜云 彭红玲 熊永华 牛智川 吴荣汉 |
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作者单位: | [1]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 [2]State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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基金项目: | Supported by the National Natural Science Foundation of China under Grant No 60376025. |
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摘 要: |
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关 键 词: | 谐振腔增强反射光学调制器 InGaAs/GaAs量子阱 设计 制造 |
收稿时间: | 2006-08-16 |
修稿时间: | 2006-08-16 |
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