| Deposition of Er：A12O3 Films and Photoluminescence Characteristics |
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| 引用本文： | 李成仁,宋昌烈,李淑凤,饶文雄.Deposition of Er：A12O3 Films and Photoluminescence Characteristics[J].中国物理快报,2003,20(9):1613-1615. |
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| 作者姓名： | 李成仁 宋昌烈 李淑凤 饶文雄 |
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| 作者单位： | [1]DepartmentofPhysics,LiaoningNormalUniversity,Dalian116029 [2]DepartmentofPhysics‘DalianUniversityofTechnology,Dalian116024 |
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| 摘 要： | Er^3 -doped Al2O3 films were deposited on silicon substrates by reactive closed-field unbalanced magnetron sput-tering. The process parameters, such as target bias voltage, substrate bias voltage, O2 gas flows, sputtering gas pressure, were studied. The 1.53μm photoluminescence characteristics from Er^3 were measured. The relations among the PL peak intensity, annealing temperatures, and pump power were experimentally investigated.
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| 关 键 词： | Er：A12O3薄膜 二氧化二铝薄膜 铒掺杂 薄膜沉积 光致发光 光学性质 |
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