硅基锗薄膜的异质外延生长及其在光电子器件中的应用

准直接带隙的锗，其禁带宽度小，吸收系数大，迁移率高，更重要的是，它能与硅微电子工艺兼容，在硅基光电集成中得到了广泛的研究和应用．文章综述了硅基锗薄膜的异质外延生长及其在光电子器件（特别是长波长光电探测器和激光器）应用上的进展；介绍了在硅衬底上异质外延生长锗薄膜的缓冲层技术，如组分变化的SiGe缓冲层技术、选区外延技术和低温技术；讨论了硅基锗薄膜光电探测器的性能与结构的关系以及发展趋势；分析了张应变和n型掺杂对锗光电性质的影响；展望了硅基锗薄膜单片集成和电抽运激光器的前景．

Heteroepitaxial growth of Ge films on Si substrates and its applications in optoelectronics

Epitaxial germanium film on silicon substrates has been extensively investigated for its potential applications in opto-electronic integration due to its pseudo-direct band structure,small bandgap,large absorption coefficient,high carrier mobility,and most importantly,compatibility with Si complementary metal oxide semiconductor processing.We review the recent progress in the heteroepitaxial growth of Ge films on Si substrates,as well as potential applications in optoelectronics,especially in long wavelengt...