厚胶光刻非线性畸变的校正

利用厚胶光刻技术制作大深度微结构元件是一种有效的途径,但厚胶光刻过程中的非线性畸变对光刻面形质量的严重影响限制了该技术的应用,基于此,提出了一种对掩模透射率函数进行校正的方法。分析空间像形成及其在光刻胶内传递、曝光、显影等过程中非线性因素的影响,利用模拟退火算法对掩模透射率函数进行校正,以提高光刻面形质量,并以凹面柱透镜为例,给出了校正前后的显影轮廓模拟结果,其校正后浮雕面形的体积偏差仅为2.63%。该方法在有效改善面形质量的同时,并没有引起掩模的设计、制作难度及费用增加,这对于设计、制作高质量的微结构元件有重要意义。

Precompensation for Nonlinear Distortion in Thick Film Photolithography

Fabrication of large depth microstructure by using thick film photolithography-technology is a considerable option,but effect of nonlinear distortion on the photolithography surface profile quality severely limits its application.For the above reason,a method to correct mask transmissivity function is proposed.The influences of nonlinear factors such as spatial imaging,propagation,exposure and development process are analyzed.Then,by utilizing the simulated annealing algorithm,transmissivity function of mask is optimized to improve the quality of surface profile of photolighography.Taking a concave cylinder lens as example,the simulated results of developed profile before and after correction are presented,and the volume deviation of profile after correction is only 2.63%.This method obviously improves the quality of surface profile,but does not increase difficulty of design and fabrication of the mask and expense,which is very useful to fabricate microstructure with high fidelity.