| Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers |
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| 引用本文： | 陈俊帆,赵生盛,延玲玲,任慧志,韩灿,张德坤,魏长春,王广才,侯国付,赵颖,张晓丹.Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers[J].中国物理 B,2020(3):480-487. |
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| 作者姓名： | 陈俊帆 赵生盛 延玲玲 任慧志 韩灿 张德坤 魏长春 王广才 侯国付 赵颖 张晓丹 |
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| 作者单位： | Institute of Photoelectronic Thin Film Devices and Technology of Nankai University;Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin;Engineering Center of Thin Film Photoelectronic Technology of Ministry of Education;Sino-Euro Joint Research Center for Photovoltaic Power Generation of Tianjin |
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| 基金项目： | Project supported by the National Key Research and Deveopment Program of China(Grant No.2018YFB1500402);the National Natural Science Foundation of China(Grant Nos.61674084 and 61874167);the Fundamental Research Funds for Central Universities,China;the Natural Science Foundation of Tianjin City,China(Grant No.17JCYBJC41400);the Open Fund of the Key Laboratory of Optical Information Science&Technology of Ministry of Education of China(Grant No.2017KFKT014);the 111 Project,China(Grant No.B16027);the International Cooperation Base,China(Grant No.2016D01025);Tianjin International Joint Research and Development Center,China。 |
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| 摘 要： | Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iVoc of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.
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| 关 键 词： | a-SiO_x:H orientated WAFERS silicon HETEROJUNCTION |
Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiO_x:H) on〈100〉- and 〈111〉-orientated c-Si wafers |
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| Jun-Fan Chen,Sheng-Sheng Zhao,Ling-Ling Yan,Hui-Zhi Ren,Can Han,De-Kun Zhang,Chang-Chun Wei,Guang-Cai Wang,Guo-Fu Hou,§,Ying Zhao,Xiao-Dan Zhang.Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiO_x:H) on〈100〉- and 〈111〉-orientated c-Si wafers[J].Chinese Physics B,2020(3):480-487. |
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| Authors: | Jun-Fan Chen Sheng-Sheng Zhao Ling-Ling Yan Hui-Zhi Ren Can Han De-Kun Zhang Chang-Chun Wei Guang-Cai Wang Guo-Fu Hou § Ying Zhao Xiao-Dan Zhang |
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| Affiliation: | (Institute of Photoelectronic Thin Film Devices and Technology of Nankai University,Tianjin 300350,China;Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,Tianjin 300350,China;Engineering Center of Thin Film Photoelectronic Technology of Ministry of Education,Tianjin 300350,China;Sino-Euro Joint Research Center for Photovoltaic Power Generation of Tianjin,Tianjin 300350,China) |
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| Abstract: | Hydrogenated amorphous silicon oxide（a-SiOx:H） is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction（SHJ） solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τeff) of 4743 μs and corresponding implied opencircuit voltage(iVoc) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τeff of 2429 μs and iVoc of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx（Si-rich）, Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%. |
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| Keywords: | a-SiO_x:H orientated wafers silicon heterojunction |
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