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The influences of model parameters on the characteristics of memristors
Authors:Zhou Jing  Huang Da
Affiliation:National Laboratory for Parallel and Distributed Processing, School of Computer, National University of Defense Technology, Changsha 410073, China
Abstract:As the fourth passive circuit component, a memristor is a nonlinear resistor that can “remember” the amount of charge passing through it. The characteristic of “remembering” the charge and non-volatility makes memristors great potential candidates in many fields. Nowadays, only a few groups have the ability to fabricate memristors, and most researchers study them by theoretic analysis and simulation. In this paper, we first analyse the theoretical base and characteristics of memristors, then use a simulation program with integrated circuit emphasis as our tool to simulate the theoretical model of memristors and change the parameters in the model to see the influence of each parameter on the characteristics. Our work supplies researchers engaged in memristor-based circuits with advice on how to choose the proper parameters.
Keywords:memristor  I-V characteristics  simulation program with integrated circuit emphasis
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